DE10196531T1 - Beschleunigungssensor und Herstellungsverfahren dafür - Google Patents

Beschleunigungssensor und Herstellungsverfahren dafür

Info

Publication number
DE10196531T1
DE10196531T1 DE10196531T DE10196531T DE10196531T1 DE 10196531 T1 DE10196531 T1 DE 10196531T1 DE 10196531 T DE10196531 T DE 10196531T DE 10196531 T DE10196531 T DE 10196531T DE 10196531 T1 DE10196531 T1 DE 10196531T1
Authority
DE
Germany
Prior art keywords
accelerometer
manufacturing process
process therefor
therefor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE10196531T
Other languages
English (en)
Other versions
DE10196531B4 (de
Inventor
Kiyoshi Ishibashi
Makio Horikawa
Mika Okumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE10196531T1 publication Critical patent/DE10196531T1/de
Application granted granted Critical
Publication of DE10196531B4 publication Critical patent/DE10196531B4/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Pressure Sensors (AREA)
DE10196531T 2001-06-21 2001-06-21 Beschleunigungssensor und Herstellungsverfahren dafür Expired - Fee Related DE10196531B4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/005343 WO2003001217A1 (en) 2001-06-21 2001-06-21 Acceleration sensor and method of manufacture thereof

Publications (2)

Publication Number Publication Date
DE10196531T1 true DE10196531T1 (de) 2003-08-07
DE10196531B4 DE10196531B4 (de) 2005-06-30

Family

ID=11737472

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10196531T Expired - Fee Related DE10196531B4 (de) 2001-06-21 2001-06-21 Beschleunigungssensor und Herstellungsverfahren dafür

Country Status (7)

Country Link
US (1) US6958529B2 (de)
JP (1) JPWO2003001217A1 (de)
KR (1) KR100514240B1 (de)
CN (1) CN1241021C (de)
DE (1) DE10196531B4 (de)
TW (1) TW507304B (de)
WO (1) WO2003001217A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101010364B1 (ko) * 2003-07-11 2011-01-25 엘지전자 주식회사 스위블 힌지 및 이를 사용한 폴더형 휴대 단말기
JP2005172543A (ja) * 2003-12-10 2005-06-30 Mitsubishi Electric Corp 加速度センサおよび加速度センサの製造方法
DE102004058880B4 (de) * 2004-12-06 2007-12-13 Austriamicrosystems Ag Integrierter Mikrosensor und Verfahren zur Herstellung
JP4754817B2 (ja) * 2004-12-20 2011-08-24 Ｏｋｉセミコンダクタ株式会社 半導体加速度センサ
US7461559B2 (en) * 2005-03-18 2008-12-09 Citizen Holdings Co., Ltd. Electromechanical transducer and method of fabricating the same
DE102005060876B4 (de) 2005-12-20 2019-09-05 Robert Bosch Gmbh Sensoranordnung und Verfahren zur Herstellung einer Sensoranordnung
JP4650843B2 (ja) * 2007-12-28 2011-03-16 三菱電機株式会社 半導体装置および半導体装置の製造方法
US8207586B2 (en) * 2008-09-22 2012-06-26 Alps Electric Co., Ltd. Substrate bonded MEMS sensor
JP4924663B2 (ja) * 2008-12-25 2012-04-25 株式会社デンソー 半導体装置およびその製造方法
US8089144B2 (en) * 2008-12-17 2012-01-03 Denso Corporation Semiconductor device and method for manufacturing the same
JP5540911B2 (ja) 2010-06-09 2014-07-02 三菱電機株式会社 半導体装置
JPWO2012014792A1 (ja) 2010-07-27 2013-09-12 アルプス電気株式会社 物理量センサ及びその製造方法
JP5999302B2 (ja) * 2012-02-09 2016-09-28 セイコーエプソン株式会社 電子デバイスおよびその製造方法、並びに電子機器
JP2013181884A (ja) * 2012-03-02 2013-09-12 Panasonic Corp 静電容量式センサ
JP6657626B2 (ja) * 2015-07-10 2020-03-04 セイコーエプソン株式会社 物理量センサー、電子機器および移動体
CN108508230B (zh) * 2017-02-27 2021-07-23 川崎重工业株式会社 加速度传感器组装体
JP7188311B2 (ja) 2019-07-31 2022-12-13 セイコーエプソン株式会社 ジャイロセンサー、電子機器、及び移動体
DE102021210931A1 (de) 2021-09-30 2023-03-30 Robert Bosch Gesellschaft mit beschränkter Haftung Mikromechanische Vorrichtung mit hermetisch dichter Kaverne
WO2023100576A1 (ja) * 2021-11-30 2023-06-08 ローム株式会社 Ｍｅｍｓセンサ及びｍｅｍｓセンサの製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4201104C1 (de) * 1992-01-17 1993-05-13 Mannesmann Kienzle Gmbh, 7730 Villingen-Schwenningen, De
JPH0792186A (ja) * 1993-09-27 1995-04-07 Matsushita Electric Works Ltd 半導体加速度センサ
JPH07273351A (ja) 1994-03-30 1995-10-20 Nippon Seiki Co Ltd 半導体センサ
US5591679A (en) 1995-04-12 1997-01-07 Sensonor A/S Sealed cavity arrangement method
JP3613838B2 (ja) * 1995-05-18 2005-01-26 株式会社デンソー 半導体装置の製造方法
JP3536544B2 (ja) * 1996-09-05 2004-06-14 株式会社デンソー 半導体力学量センサの製造方法
AU1917099A (en) * 1997-12-18 1999-07-05 Allied-Signal Inc. Silicon micro-machined accelerometer using integrated electrical and mechanical packaging
JP4178575B2 (ja) * 1998-02-02 2008-11-12 株式会社デンソー 半導体装置の製造方法
JP4214584B2 (ja) 1998-11-27 2009-01-28 株式会社デンソー 半導体力学量センサおよびその製造方法
JP4238437B2 (ja) 1999-01-25 2009-03-18 株式会社デンソー 半導体力学量センサとその製造方法
JP2001119040A (ja) 1999-10-18 2001-04-27 Denso Corp 半導体力学量センサとその製造方法
JP2001305152A (ja) * 2000-04-18 2001-10-31 Fuji Electric Co Ltd 半導体センサチップおよびその製造方法、半導体センサチップを備えた半導体センサ
JP4386559B2 (ja) * 2000-10-20 2009-12-16 三菱電機株式会社 加速度センサ及びその製造方法
JP2002228680A (ja) 2001-02-02 2002-08-14 Denso Corp 容量式力学量センサ

Also Published As

Publication number Publication date
US20030155622A1 (en) 2003-08-21
KR20030027960A (ko) 2003-04-07
CN1447921A (zh) 2003-10-08
US6958529B2 (en) 2005-10-25
KR100514240B1 (ko) 2005-09-13
TW507304B (en) 2002-10-21
CN1241021C (zh) 2006-02-08
WO2003001217A1 (en) 2003-01-03
DE10196531B4 (de) 2005-06-30
JPWO2003001217A1 (ja) 2004-10-14

Similar Documents

Publication Publication Date Title
DE60310339D1 (de) Querträger und Herstellungsverfahren
DE60218767D1 (de) Reissverschluss und Herstellungsverfahren
DE60136927D1 (de) Rfelektiver bedruckter gegenstand und sein herstellungsverfahren
DE60223735D1 (de) Interferometer und zugehöriges Herstellungsverfahren
DE60234637D1 (de) Ck und zusammenbauverfahren dafür
DE60112988D1 (de) Kabelbaum und Herstellungsverfahren
DE60319810D1 (de) Anschwemmfiltermedien und herstellungs- und verwendungsverfahren
DE60226928D1 (de) Polyhydroxyalkanoat-enthaltende Struktur und Herstellungsverfahren hierfür
DE50109327D1 (de) Mikromechanisches bauelement und entsprechendes herstellungsverfahren
DE60324888D1 (de) und Herstellungsverfahren
DE60235142D1 (de) Kondensator und dessen Herstellungsverfahren
DE50103327D1 (de) Mikromechanisches bauelement und entsprechendes herstellungsverfahren
DE60238634D1 (de) Strickentwurfsverfahren und einheit
DE60225214D1 (de) Authentisches Dokument und dessen Herstellungsverfahren
DE60225763D1 (de) Trockentoner und Herstellungsverfahren
DE10196531T1 (de) Beschleunigungssensor und Herstellungsverfahren dafür
DE60228061D1 (de) Maschenware mit öffnung und herstellungsverfahren
DE60023103D1 (de) Lüfter und dessen Herstellungverfahren
DE60233444D1 (de) Teileanbringvorrichtung und teileanbringverfahren
DE60020737D1 (de) Sic-einkristall und herstellungsverfahren dafür
DE60227777D1 (de) Handgriffstruktur und herstellungsverfahren dafür
DE60206957D1 (de) Vliesstoff und herstellungsverfahren
DE60220196D1 (de) Filter und dessen Herstellungsverfahren
DE60231538D1 (de) Sputtertarget und herstellungsverfahren dafür
DE60210535D1 (de) Vibrator und Herstellungsverfahren desselben

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law

Ref document number: 10196531

Country of ref document: DE

Date of ref document: 20030807

Kind code of ref document: P

8364 No opposition during term of opposition
R084 Declaration of willingness to licence
R084 Declaration of willingness to licence
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee