DE1005646B - Verfahren zur Erzeugung von grossflaechigen, rissefreien Halbleiter-p-n-Verbindungen - Google Patents

Verfahren zur Erzeugung von grossflaechigen, rissefreien Halbleiter-p-n-Verbindungen

Info

Publication number
DE1005646B
DE1005646B DEW14933A DEW0014933A DE1005646B DE 1005646 B DE1005646 B DE 1005646B DE W14933 A DEW14933 A DE W14933A DE W0014933 A DEW0014933 A DE W0014933A DE 1005646 B DE1005646 B DE 1005646B
Authority
DE
Germany
Prior art keywords
silicon
doping material
semiconductor body
aluminum
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW14933A
Other languages
German (de)
English (en)
Inventor
Carl Dryer Thurmond
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1005646B publication Critical patent/DE1005646B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Silicon Compounds (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DEW14933A 1953-10-26 1954-09-21 Verfahren zur Erzeugung von grossflaechigen, rissefreien Halbleiter-p-n-Verbindungen Pending DE1005646B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US388094A US2837448A (en) 1953-10-26 1953-10-26 Method of fabricating semiconductor pn junctions
US550392A US2877147A (en) 1953-10-26 1955-12-01 Alloyed semiconductor contacts

Publications (1)

Publication Number Publication Date
DE1005646B true DE1005646B (de) 1957-04-04

Family

ID=27012140

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW14933A Pending DE1005646B (de) 1953-10-26 1954-09-21 Verfahren zur Erzeugung von grossflaechigen, rissefreien Halbleiter-p-n-Verbindungen

Country Status (6)

Country Link
US (2) US2837448A (https=)
BE (1) BE532794A (https=)
DE (1) DE1005646B (https=)
FR (1) FR1107536A (https=)
GB (1) GB759002A (https=)
NL (2) NL92060C (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1103468B (de) * 1958-08-01 1961-03-30 Philips Nv Verfahren zur Herstellung von Halbleiteranordnungen mit aluminiumhaltigen Elektroden
DE1114592B (de) * 1957-09-19 1961-10-05 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen mit einem Halbleiterkoerper und mindestens einer einlegierten, teilweise aus Aluminium bestehenden Elektrode
DE1118360B (de) * 1955-08-04 1961-11-30 Gen Electric Co Ltd Verfahren und Vorrichtung zur Herstellung eines einlegierten Kontaktes an einem Siliziumkoerper
DE1127482B (de) * 1959-05-27 1962-04-12 Bendix Corp Verfahren zum Dotieren der Emitterelektrode einer Halbleiteranordnung mit Aluminium
DE1248167B (de) * 1959-07-24 1967-08-24 Philco Fort Corp Eine Ges Nach Verfahren zur Herstellung eines Halbleiterbauelements durch Einlegieren einer Elektrode in einen Halbleiterkoerper aus Germanium

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB797304A (en) * 1955-12-19 1958-07-02 Gen Electric Co Ltd Improvements in or relating to the manufacture of semiconductor devices
US2932594A (en) * 1956-09-17 1960-04-12 Rca Corp Method of making surface alloy junctions in semiconductor bodies
NL108282C (https=) * 1957-03-05
US2945285A (en) * 1957-06-03 1960-07-19 Sperry Rand Corp Bonding of semiconductor contact electrodes
DE1067936B (https=) * 1958-02-04 1959-10-29
NL247987A (https=) * 1958-06-14
NL113385C (https=) * 1958-10-31
US3034871A (en) * 1958-12-29 1962-05-15 Texas Instruments Inc Method of forming silicon into intricate shapes
US3117040A (en) * 1959-01-03 1964-01-07 Telefunken Ag Transistor
US2942166A (en) * 1959-03-23 1960-06-21 Philco Corp Semiconductor apparatus
US3068127A (en) * 1959-06-02 1962-12-11 Siemens Ag Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal
US2959502A (en) * 1959-09-01 1960-11-08 Wolfgang W Gaertner Fabrication of semiconductor devices
US3191276A (en) * 1959-12-01 1965-06-29 Talon Inc Method of making composite electrical contact bodies
US3117864A (en) * 1960-10-24 1964-01-14 Westinghouse Brake & Signal Process for producing a worked gold alloy
NL270684A (https=) * 1960-11-01
NL260812A (https=) * 1961-02-03
NL278654A (https=) * 1961-06-08
US3192081A (en) * 1961-07-20 1965-06-29 Raytheon Co Method of fusing material and the like
US3099539A (en) * 1962-01-11 1963-07-30 Alloys Unltd Inc Gold silicon alloy
GB927380A (en) * 1962-03-21 1963-05-29 Mullard Ltd Improvements in or relating to solders
NL294675A (https=) * 1962-06-29
US3239376A (en) * 1962-06-29 1966-03-08 Bell Telephone Labor Inc Electrodes to semiconductor wafers
US3434828A (en) * 1963-02-01 1969-03-25 Texas Instruments Inc Gold alloy for attaching a lead to a semiconductor body
US3351500A (en) * 1963-03-13 1967-11-07 Globe Union Inc Method of forming a transistor and varistor by reduction and diffusion
DE1250003B (https=) * 1963-06-28
US3416979A (en) * 1964-08-31 1968-12-17 Matsushita Electric Industrial Co Ltd Method of making a variable capacitance silicon diode with hyper abrupt junction
US3371255A (en) * 1965-06-09 1968-02-27 Texas Instruments Inc Gallium arsenide semiconductor device and contact alloy therefor
US3413157A (en) * 1965-10-21 1968-11-26 Ibm Solid state epitaxial growth of silicon by migration from a silicon-aluminum alloy deposit
US5011792A (en) * 1990-02-12 1991-04-30 At&T Bell Laboratories Method of making ohmic resistance WSb, contacts to III-V semiconductor materials

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
BE506280A (https=) * 1950-10-10
GB728244A (en) * 1951-10-19 1955-04-13 Gen Electric Improvements in and relating to germanium photocells
BE517459A (https=) * 1952-02-07
NL178978B (nl) * 1952-06-19 Texaco Ag Werkwijze voor het bereiden van een smeervet op basis van lithiumzeep.
US2742383A (en) * 1952-08-09 1956-04-17 Hughes Aircraft Co Germanium junction-type semiconductor devices
NL182156B (nl) * 1952-10-20 Flamemaster Corp Zelfdovende brandwerende samenstelling en voorwerpen daarmee bekleed.
US2725316A (en) * 1953-05-18 1955-11-29 Bell Telephone Labor Inc Method of preparing pn junctions in semiconductors
US2736847A (en) * 1954-05-10 1956-02-28 Hughes Aircraft Co Fused-junction silicon diodes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1118360B (de) * 1955-08-04 1961-11-30 Gen Electric Co Ltd Verfahren und Vorrichtung zur Herstellung eines einlegierten Kontaktes an einem Siliziumkoerper
DE1114592B (de) * 1957-09-19 1961-10-05 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen mit einem Halbleiterkoerper und mindestens einer einlegierten, teilweise aus Aluminium bestehenden Elektrode
DE1103468B (de) * 1958-08-01 1961-03-30 Philips Nv Verfahren zur Herstellung von Halbleiteranordnungen mit aluminiumhaltigen Elektroden
DE1127482B (de) * 1959-05-27 1962-04-12 Bendix Corp Verfahren zum Dotieren der Emitterelektrode einer Halbleiteranordnung mit Aluminium
DE1248167B (de) * 1959-07-24 1967-08-24 Philco Fort Corp Eine Ges Nach Verfahren zur Herstellung eines Halbleiterbauelements durch Einlegieren einer Elektrode in einen Halbleiterkoerper aus Germanium

Also Published As

Publication number Publication date
US2877147A (en) 1959-03-10
GB759002A (en) 1956-10-10
US2837448A (en) 1958-06-03
NL191674A (https=)
BE532794A (https=)
FR1107536A (fr) 1956-01-03
NL92060C (https=)

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