DE04724418T1 - Siliziumwafer-wärmebehandlungs-einspannvorrichtung und silizumwafer-wärmebehandlungsverfahren - Google Patents

Siliziumwafer-wärmebehandlungs-einspannvorrichtung und silizumwafer-wärmebehandlungsverfahren Download PDF

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Publication number
DE04724418T1
DE04724418T1 DE04724418T DE04724418T DE04724418T1 DE 04724418 T1 DE04724418 T1 DE 04724418T1 DE 04724418 T DE04724418 T DE 04724418T DE 04724418 T DE04724418 T DE 04724418T DE 04724418 T1 DE04724418 T1 DE 04724418T1
Authority
DE
Germany
Prior art keywords
heat treatment
silicon wafer
center
holding
retaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE04724418T
Other languages
German (de)
English (en)
Inventor
Yoshinobu c/o Sumco Corporation Nakada
Hiroyuki c/o Sumco Corporation Shiraki
Takeshi c/o Sumco Corporation Hasegawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Publication of DE04724418T1 publication Critical patent/DE04724418T1/de
Pending legal-status Critical Current

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens, or the like for the charge within the furnace
    • F27D5/0037—Supports specially adapted for semi-conductors
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE04724418T 2003-03-31 2004-03-30 Siliziumwafer-wärmebehandlungs-einspannvorrichtung und silizumwafer-wärmebehandlungsverfahren Pending DE04724418T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003097365A JP3781014B2 (ja) 2003-03-31 2003-03-31 シリコンウェーハ熱処理治具およびシリコンウェーハ熱処理方法
JP2003097365 2003-03-31
PCT/JP2004/004508 WO2004088744A1 (ja) 2003-03-31 2004-03-30 シリコンウェーハ熱処理治具およびシリコンウェーハ熱処理方法

Publications (1)

Publication Number Publication Date
DE04724418T1 true DE04724418T1 (de) 2006-10-05

Family

ID=33127549

Family Applications (1)

Application Number Title Priority Date Filing Date
DE04724418T Pending DE04724418T1 (de) 2003-03-31 2004-03-30 Siliziumwafer-wärmebehandlungs-einspannvorrichtung und silizumwafer-wärmebehandlungsverfahren

Country Status (8)

Country Link
US (2) US7481888B2 (zh)
EP (1) EP1610374B1 (zh)
JP (1) JP3781014B2 (zh)
KR (1) KR100693892B1 (zh)
CN (2) CN1768421B (zh)
DE (1) DE04724418T1 (zh)
TW (1) TWI267162B (zh)
WO (1) WO2004088744A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5050363B2 (ja) * 2005-08-12 2012-10-17 株式会社Ｓｕｍｃｏ 半導体シリコン基板用熱処理治具およびその製作方法
DE102007027111B4 (de) * 2006-10-04 2011-12-08 Siltronic Ag Siliciumscheibe mit guter intrinsischer Getterfähigkeit und Verfahren zu ihrer Herstellung
JP5205737B2 (ja) * 2006-10-13 2013-06-05 株式会社Ｓｕｍｃｏ シリコンウェーハの保持方法および保持治具
JP5205738B2 (ja) * 2006-10-16 2013-06-05 株式会社Ｓｕｍｃｏ シリコンウェーハの支持方法、熱処理治具および熱処理ウェーハ
JP5071217B2 (ja) * 2008-04-17 2012-11-14 信越半導体株式会社 縦型熱処理用ボートおよびそれを用いたシリコンウエーハの熱処理方法
JP5308525B2 (ja) 2008-07-30 2013-10-09 エルジー エレクトロニクス インコーポレイティド 無線通信システムにおける制御情報の送信方法及び装置
JP2011029217A (ja) * 2009-07-21 2011-02-10 Okawa Kanagata Sekkei Jimusho:Kk ウェーハ用ホルダ
CN102163540B (zh) * 2010-12-27 2013-01-30 清华大学 用于深紫外激光退火的三片式加热片台扫描装置
JP5964630B2 (ja) * 2012-03-27 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP5737480B2 (ja) * 2012-07-26 2015-06-17 千住金属工業株式会社 半導体ウエハー搬送治具
FR2995394B1 (fr) * 2012-09-10 2021-03-12 Soitec Silicon On Insulator Dispositif de support d'une pluralite de substrats pour un four vertical
US8865602B2 (en) * 2012-09-28 2014-10-21 Applied Materials, Inc. Edge ring lip
US9403251B2 (en) * 2012-10-17 2016-08-02 Applied Materials, Inc. Minimal contact edge ring for rapid thermal processing
JP6382151B2 (ja) * 2014-09-25 2018-08-29 東京エレクトロン株式会社 基板熱処理装置、基板熱処理方法、記録媒体及び熱処理状態検知装置
CN114628312B (zh) * 2022-05-17 2022-07-19 江苏邑文微电子科技有限公司 防晶圆滑落的晶圆传输装置、半导体设备及其使用方法

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US5310339A (en) * 1990-09-26 1994-05-10 Tokyo Electron Limited Heat treatment apparatus having a wafer boat
JP2555849Y2 (ja) 1992-09-17 1997-11-26 大日本スクリーン製造株式会社 回転式基板処理装置
JPH06151550A (ja) * 1992-11-05 1994-05-31 Toshiba Corp ウェハーフォーク
JP3280437B2 (ja) * 1992-11-27 2002-05-13 東芝セラミックス株式会社 縦型ボート
US5492229A (en) * 1992-11-27 1996-02-20 Toshiba Ceramics Co., Ltd. Vertical boat and a method for making the same
JPH0758039A (ja) * 1993-08-20 1995-03-03 Toshiba Ceramics Co Ltd サセプタ
JP2911023B2 (ja) * 1994-08-31 1999-06-23 信越石英株式会社 シリコンウエハ熱処理用石英ガラス治具およびその使用方法
JPH09139352A (ja) * 1995-11-15 1997-05-27 Nec Corp 縦型炉用ウェーハボート
US6133550A (en) * 1996-03-22 2000-10-17 Sandia Corporation Method and apparatus for thermal processing of semiconductor substrates
JP3373394B2 (ja) * 1996-06-21 2003-02-04 株式会社日立国際電気 基板処理装置および基板処理方法
CN100386847C (zh) * 1999-09-03 2008-05-07 三菱住友硅晶株式会社 晶片保持架
EP1091391A1 (de) * 1999-10-05 2001-04-11 SICO Produktions- und Handelsges.m.b.H. Haltevorrichtung für Halbleiterscheiben
JP2001168175A (ja) * 1999-12-07 2001-06-22 Semiconductor Leading Edge Technologies Inc 熱処理用基板保持具、基板熱処理装置および基板の熱処理方法
US6474967B1 (en) * 2000-05-18 2002-11-05 Kimberly-Clark Worldwide, Inc. Breaker plate assembly for producing bicomponent fibers in a meltblown apparatus
US7204887B2 (en) * 2000-10-16 2007-04-17 Nippon Steel Corporation Wafer holding, wafer support member, wafer boat and heat treatment furnace
JP2002134593A (ja) 2000-10-19 2002-05-10 Mitsubishi Materials Silicon Corp 半導体ウェーハの支持構造
JP3783557B2 (ja) 2000-11-30 2006-06-07 株式会社Ｓｕｍｃｏ シリコンウェーハ熱処理用３点支持具の配置方法
US7022192B2 (en) * 2002-09-04 2006-04-04 Tokyo Electron Limited Semiconductor wafer susceptor

Also Published As

Publication number Publication date
CN1768421A (zh) 2006-05-03
US8026182B2 (en) 2011-09-27
EP1610374B1 (en) 2017-10-11
EP1610374A1 (en) 2005-12-28
CN101504944B (zh) 2011-07-06
CN1768421B (zh) 2010-04-28
TWI267162B (en) 2006-11-21
KR100693892B1 (ko) 2007-03-13
US20060208434A1 (en) 2006-09-21
US7481888B2 (en) 2009-01-27
JP2004304075A (ja) 2004-10-28
CN101504944A (zh) 2009-08-12
KR20060009240A (ko) 2006-01-31
WO2004088744A1 (ja) 2004-10-14
TW200428563A (en) 2004-12-16
US20090127746A1 (en) 2009-05-21
JP3781014B2 (ja) 2006-05-31
EP1610374A4 (en) 2009-12-09

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