DD156857A5 - Halbleiterspeicher mit auffrischschaltung - Google Patents
Halbleiterspeicher mit auffrischschaltung Download PDFInfo
- Publication number
- DD156857A5 DD156857A5 DD81226826A DD22682681A DD156857A5 DD 156857 A5 DD156857 A5 DD 156857A5 DD 81226826 A DD81226826 A DD 81226826A DD 22682681 A DD22682681 A DD 22682681A DD 156857 A5 DD156857 A5 DD 156857A5
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- capacitor
- terminal
- transistor
- refresh
- mos
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000003990 capacitor Substances 0.000 claims abstract description 61
- 230000015654 memory Effects 0.000 claims abstract description 25
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 4
- 150000004706 metal oxides Chemical class 0.000 abstract description 4
- 230000005669 field effect Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000012799 electrically-conductive coating Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/109,777 US4292677A (en) | 1980-01-07 | 1980-01-07 | Self-refreshed capacitor memory cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD156857A5 true DD156857A5 (de) | 1982-09-22 |
Family
ID=22329511
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD81226826A DD156857A5 (de) | 1980-01-07 | 1981-01-05 | Halbleiterspeicher mit auffrischschaltung |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US4292677A (nl) |
| JP (1) | JPS56101695A (nl) |
| BE (1) | BE886964A (nl) |
| CA (1) | CA1135853A (nl) |
| DD (1) | DD156857A5 (nl) |
| DE (1) | DE3100129A1 (nl) |
| ES (1) | ES8205074A1 (nl) |
| FR (1) | FR2474742A1 (nl) |
| GB (1) | GB2067867B (nl) |
| IT (1) | IT1134949B (nl) |
| NL (1) | NL8100020A (nl) |
| SE (1) | SE8009001L (nl) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4413329A (en) * | 1980-12-24 | 1983-11-01 | International Business Machines Corporation | Dynamic memory cell |
| DE3235835A1 (de) * | 1982-09-28 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Halbleiter-speicherzelle |
| US5003361A (en) * | 1987-08-31 | 1991-03-26 | At&T Bell Laboratories | Active dynamic memory cell |
| WO2000019444A1 (de) * | 1998-09-30 | 2000-04-06 | Infineon Technologies Ag | Single-port speicherzelle |
| US6768668B2 (en) * | 2001-06-12 | 2004-07-27 | Infineon Technologies Aktiengesellschaft | Converting volatile memory to non-volatile memory |
| US6686729B1 (en) | 2002-10-15 | 2004-02-03 | Texas Instruments Incorporated | DC/DC switching regulator having reduced switching loss |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4030083A (en) * | 1975-04-04 | 1977-06-14 | Bell Telephone Laboratories, Incorporated | Self-refreshed capacitor memory cell |
| US4122550A (en) * | 1978-02-08 | 1978-10-24 | Intel Corporation | Low power random access memory with self-refreshing cells |
| US4203159A (en) * | 1978-10-05 | 1980-05-13 | Wanlass Frank M | Pseudostatic electronic memory |
-
1980
- 1980-01-07 US US06/109,777 patent/US4292677A/en not_active Expired - Lifetime
- 1980-12-18 CA CA000367080A patent/CA1135853A/en not_active Expired
- 1980-12-19 SE SE8009001A patent/SE8009001L/ not_active Application Discontinuation
- 1980-12-31 ES ES498280A patent/ES8205074A1/es not_active Expired
-
1981
- 1981-01-05 FR FR8100045A patent/FR2474742A1/fr active Granted
- 1981-01-05 DD DD81226826A patent/DD156857A5/de unknown
- 1981-01-05 DE DE19813100129 patent/DE3100129A1/de not_active Withdrawn
- 1981-01-06 GB GB8100212A patent/GB2067867B/en not_active Expired
- 1981-01-06 BE BE0/203400A patent/BE886964A/fr not_active IP Right Cessation
- 1981-01-06 IT IT19020/81A patent/IT1134949B/it active
- 1981-01-06 NL NL8100020A patent/NL8100020A/nl not_active Application Discontinuation
- 1981-01-07 JP JP52681A patent/JPS56101695A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2474742A1 (fr) | 1981-07-31 |
| ES498280A0 (es) | 1982-06-01 |
| GB2067867B (en) | 1983-10-26 |
| CA1135853A (en) | 1982-11-16 |
| DE3100129A1 (de) | 1981-11-19 |
| US4292677A (en) | 1981-09-29 |
| SE8009001L (sv) | 1981-07-08 |
| IT1134949B (it) | 1986-08-20 |
| NL8100020A (nl) | 1981-08-03 |
| JPS56101695A (en) | 1981-08-14 |
| FR2474742B1 (nl) | 1984-01-27 |
| GB2067867A (en) | 1981-07-30 |
| IT8119020A0 (it) | 1981-01-06 |
| ES8205074A1 (es) | 1982-06-01 |
| BE886964A (fr) | 1981-05-04 |
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