DD150968A1 - Verfahren zur herstellung keramischer halbleiterbauelemente - Google Patents
Verfahren zur herstellung keramischer halbleiterbauelemente Download PDFInfo
- Publication number
- DD150968A1 DD150968A1 DD22138080A DD22138080A DD150968A1 DD 150968 A1 DD150968 A1 DD 150968A1 DD 22138080 A DD22138080 A DD 22138080A DD 22138080 A DD22138080 A DD 22138080A DD 150968 A1 DD150968 A1 DD 150968A1
- Authority
- DD
- German Democratic Republic
- Prior art keywords
- additives
- ceramic body
- item
- ceramic
- grain
- Prior art date
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000004065 semiconductor Substances 0.000 title abstract description 9
- 239000000654 additive Substances 0.000 claims abstract description 44
- 239000000126 substance Substances 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 230000000694 effects Effects 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims abstract description 9
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 8
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 20
- 238000005245 sintering Methods 0.000 claims description 18
- 239000011148 porous material Substances 0.000 claims description 8
- 239000000155 melt Substances 0.000 claims description 5
- 230000001737 promoting effect Effects 0.000 claims description 4
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 3
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 3
- 230000002401 inhibitory effect Effects 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 230000006641 stabilisation Effects 0.000 claims description 2
- 238000011105 stabilization Methods 0.000 claims description 2
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 2
- 230000008020 evaporation Effects 0.000 claims 1
- 230000032683 aging Effects 0.000 abstract description 6
- 239000003990 capacitor Substances 0.000 abstract description 4
- 238000004870 electrical engineering Methods 0.000 abstract description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 4
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- OXSYGCRLQCGSAQ-UHFFFAOYSA-N CC1CCC2N(C1)CC3C4(O)CC5C(CCC6C(O)C(O)CCC56C)C4(O)CC(O)C3(O)C2(C)O Chemical compound CC1CCC2N(C1)CC3C4(O)CC5C(CCC6C(O)C(O)CCC56C)C4(O)CC(O)C3(O)C2(C)O OXSYGCRLQCGSAQ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229920006069 Miramid® Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/105—Varistor cores
- H01C7/108—Metal oxide
- H01C7/112—ZnO type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
- H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1272—Semiconductive ceramic capacitors
- H01G4/1281—Semiconductive ceramic capacitors with grain boundary layer
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
- Conductive Materials (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD22138080A DD150968A1 (de) | 1980-05-27 | 1980-05-27 | Verfahren zur herstellung keramischer halbleiterbauelemente |
| DE19803049329 DE3049329A1 (de) | 1980-05-27 | 1980-12-29 | Verfahren zur herstellung keramischer halbleiterbauelemente |
| FR8101079A FR2483675A1 (fr) | 1980-05-27 | 1981-01-21 | Procede pour la fabrication de composants semi-conducteurs ceramiques |
| JP7787481A JPS5719902A (en) | 1980-05-27 | 1981-05-22 | Method of producing ceramic semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DD22138080A DD150968A1 (de) | 1980-05-27 | 1980-05-27 | Verfahren zur herstellung keramischer halbleiterbauelemente |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DD150968A1 true DD150968A1 (de) | 1981-09-23 |
Family
ID=5524378
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DD22138080A DD150968A1 (de) | 1980-05-27 | 1980-05-27 | Verfahren zur herstellung keramischer halbleiterbauelemente |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5719902A (fr) |
| DD (1) | DD150968A1 (fr) |
| DE (1) | DE3049329A1 (fr) |
| FR (1) | FR2483675A1 (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3235886A1 (de) * | 1982-09-28 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer sperrschicht-keramik |
| JP3251134B2 (ja) * | 1994-08-29 | 2002-01-28 | 松下電器産業株式会社 | 酸化亜鉛焼結体の製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3933668A (en) * | 1973-07-16 | 1976-01-20 | Sony Corporation | Intergranular insulation type polycrystalline ceramic semiconductive composition |
| DE2736688C2 (de) * | 1977-08-16 | 1986-02-20 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Verfahren zur Herstellung eines Dielektrikums mit Perowskitstruktur |
-
1980
- 1980-05-27 DD DD22138080A patent/DD150968A1/de not_active IP Right Cessation
- 1980-12-29 DE DE19803049329 patent/DE3049329A1/de not_active Withdrawn
-
1981
- 1981-01-21 FR FR8101079A patent/FR2483675A1/fr active Pending
- 1981-05-22 JP JP7787481A patent/JPS5719902A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5719902A (en) | 1982-02-02 |
| FR2483675A1 (fr) | 1981-12-04 |
| DE3049329A1 (de) | 1981-12-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ENJ | Ceased due to non-payment of renewal fee |