CN213242483U - 衬底支撑件 - Google Patents
衬底支撑件 Download PDFInfo
- Publication number
- CN213242483U CN213242483U CN202021336306.1U CN202021336306U CN213242483U CN 213242483 U CN213242483 U CN 213242483U CN 202021336306 U CN202021336306 U CN 202021336306U CN 213242483 U CN213242483 U CN 213242483U
- Authority
- CN
- China
- Prior art keywords
- support
- substrate
- angled wall
- radius
- substrate support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
- H10P72/722—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862774644P | 2018-12-03 | 2018-12-03 | |
| US62/774,644 | 2018-12-03 | ||
| CN201922123241.6U CN210956592U (zh) | 2018-12-03 | 2019-12-02 | 衬底支撑件 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922123241.6U Division CN210956592U (zh) | 2018-12-03 | 2019-12-02 | 衬底支撑件 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN213242483U true CN213242483U (zh) | 2021-05-18 |
Family
ID=70849364
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202021336306.1U Active CN213242483U (zh) | 2018-12-03 | 2019-12-02 | 衬底支撑件 |
| CN201922123241.6U Active CN210956592U (zh) | 2018-12-03 | 2019-12-02 | 衬底支撑件 |
| CN202310691393.4A Pending CN116525400A (zh) | 2018-12-03 | 2019-12-02 | 具有改进的吸紧和电弧放电性能的静电吸盘设计 |
| CN201911214538.1A Active CN111261487B (zh) | 2018-12-03 | 2019-12-02 | 具有改进的吸紧和电弧放电性能的静电吸盘设计 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922123241.6U Active CN210956592U (zh) | 2018-12-03 | 2019-12-02 | 衬底支撑件 |
| CN202310691393.4A Pending CN116525400A (zh) | 2018-12-03 | 2019-12-02 | 具有改进的吸紧和电弧放电性能的静电吸盘设计 |
| CN201911214538.1A Active CN111261487B (zh) | 2018-12-03 | 2019-12-02 | 具有改进的吸紧和电弧放电性能的静电吸盘设计 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11682574B2 (https=) |
| JP (1) | JP7541005B2 (https=) |
| KR (1) | KR102864012B1 (https=) |
| CN (4) | CN213242483U (https=) |
| TW (3) | TWI902496B (https=) |
| WO (1) | WO2020117421A1 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261487A (zh) * | 2018-12-03 | 2020-06-09 | 应用材料公司 | 具有改进的吸紧和电弧放电性能的静电吸盘设计 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020149972A1 (en) | 2019-01-15 | 2020-07-23 | Applied Materials, Inc. | Pedestal for substrate processing chambers |
| WO2022235499A1 (en) * | 2021-05-03 | 2022-11-10 | Lam Research Corporation | Wafer state detection |
| KR102744850B1 (ko) * | 2022-08-10 | 2024-12-19 | 솔믹스 주식회사 | 포커스 링 및 이를 포함하는 플라즈마 식각장치 |
Family Cites Families (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6108189A (en) | 1996-04-26 | 2000-08-22 | Applied Materials, Inc. | Electrostatic chuck having improved gas conduits |
| US6189482B1 (en) | 1997-02-12 | 2001-02-20 | Applied Materials, Inc. | High temperature, high flow rate chemical vapor deposition apparatus and related methods |
| TW422892B (en) | 1997-03-27 | 2001-02-21 | Applied Materials Inc | Technique for improving chucking reproducibility |
| US5897752A (en) | 1997-05-20 | 1999-04-27 | Applied Materials, Inc. | Wafer bias ring in a sustained self-sputtering reactor |
| US6363882B1 (en) | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
| US6461435B1 (en) | 2000-06-22 | 2002-10-08 | Applied Materials, Inc. | Showerhead with reduced contact area |
| US6475336B1 (en) | 2000-10-06 | 2002-11-05 | Lam Research Corporation | Electrostatically clamped edge ring for plasma processing |
| US6391787B1 (en) | 2000-10-13 | 2002-05-21 | Lam Research Corporation | Stepped upper electrode for plasma processing uniformity |
| JP4686867B2 (ja) | 2001-02-20 | 2011-05-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US6656838B2 (en) | 2001-03-16 | 2003-12-02 | Hitachi, Ltd. | Process for producing semiconductor and apparatus for production |
| JP3973872B2 (ja) | 2001-10-17 | 2007-09-12 | 住友大阪セメント株式会社 | 電極内蔵型サセプタ及びその製造方法 |
| JP4035627B2 (ja) | 2001-12-13 | 2008-01-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びフォーカスリング機構 |
| JP4209618B2 (ja) * | 2002-02-05 | 2009-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びリング部材 |
| JP3972710B2 (ja) | 2002-03-28 | 2007-09-05 | 信越半導体株式会社 | サセプタ、エピタキシャルウェーハの製造装置および製造方法 |
| US20040112544A1 (en) | 2002-12-16 | 2004-06-17 | Hongwen Yan | Magnetic mirror for preventing wafer edge damage during dry etching |
| JP2004296553A (ja) | 2003-03-25 | 2004-10-21 | Ngk Insulators Ltd | 半導体製造装置用部材 |
| JP4547182B2 (ja) | 2003-04-24 | 2010-09-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2004327761A (ja) | 2003-04-25 | 2004-11-18 | Sumitomo Mitsubishi Silicon Corp | エピタキシャル成長用サセプタ |
| US7024105B2 (en) | 2003-10-10 | 2006-04-04 | Applied Materials Inc. | Substrate heater assembly |
| JP4666473B2 (ja) | 2005-05-12 | 2011-04-06 | 大日本スクリーン製造株式会社 | 基板熱処理装置 |
| US20070266945A1 (en) | 2006-05-16 | 2007-11-22 | Asm Japan K.K. | Plasma cvd apparatus equipped with plasma blocking insulation plate |
| US20080041312A1 (en) | 2006-08-10 | 2008-02-21 | Shoichiro Matsuyama | Stage for plasma processing apparatus, and plasma processing apparatus |
| US20080179288A1 (en) | 2007-01-30 | 2008-07-31 | Collins Kenneth S | Process for wafer backside polymer removal and wafer front side scavenger plasma |
| JP2008198739A (ja) | 2007-02-09 | 2008-08-28 | Tokyo Electron Ltd | 載置台構造、これを用いた処理装置及びこの装置の使用方法 |
| JP5038073B2 (ja) * | 2007-09-11 | 2012-10-03 | 株式会社ニューフレアテクノロジー | 半導体製造装置および半導体製造方法 |
| JP2009071210A (ja) * | 2007-09-18 | 2009-04-02 | Covalent Materials Tokuyama Corp | サセプタおよびエピタキシャル成長装置 |
| US20100018648A1 (en) | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
| US8287650B2 (en) * | 2008-09-10 | 2012-10-16 | Applied Materials, Inc. | Low sloped edge ring for plasma processing chamber |
| JP5142914B2 (ja) | 2008-09-25 | 2013-02-13 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| JP5657262B2 (ja) | 2009-03-27 | 2015-01-21 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| DE202010015933U1 (de) | 2009-12-01 | 2011-03-31 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Eine Randringanordnung für Plasmaätzkammern |
| US8274017B2 (en) | 2009-12-18 | 2012-09-25 | Applied Materials, Inc. | Multifunctional heater/chiller pedestal for wide range wafer temperature control |
| US10276410B2 (en) * | 2011-11-25 | 2019-04-30 | Nhk Spring Co., Ltd. | Substrate support device |
| JP6029049B2 (ja) * | 2012-06-08 | 2016-11-24 | パナソニックIpマネジメント株式会社 | トレイ、プラズマ処理装置、プラズマ処理方法、およびカバー部材 |
| KR20140049473A (ko) * | 2012-10-16 | 2014-04-25 | 주식회사 엘지실트론 | 에피택셜 성장용 서셉터 및 에피택셜 성장방법 |
| CN104718608A (zh) | 2012-11-21 | 2015-06-17 | Ev集团公司 | 用于容纳及安装晶片的容纳装置 |
| US8941969B2 (en) | 2012-12-21 | 2015-01-27 | Applied Materials, Inc. | Single-body electrostatic chuck |
| US10068791B2 (en) | 2013-03-08 | 2018-09-04 | Semiconductor Components Industries, Llc | Wafer susceptor for forming a semiconductor device and method therefor |
| JP6853038B2 (ja) * | 2013-06-26 | 2021-03-31 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
| US20150001180A1 (en) | 2013-06-28 | 2015-01-01 | Applied Materials, Inc. | Process kit for edge critical dimension uniformity control |
| KR101518398B1 (ko) | 2013-12-06 | 2015-05-08 | 참엔지니어링(주) | 기판 처리 장치 |
| US9583377B2 (en) | 2013-12-17 | 2017-02-28 | Lam Research Corporation | Installation fixture for elastomer bands |
| US10804081B2 (en) | 2013-12-20 | 2020-10-13 | Lam Research Corporation | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber |
| SG11201608905XA (en) | 2014-05-21 | 2016-12-29 | Applied Materials Inc | Thermal processing susceptor |
| US20160071749A1 (en) | 2014-09-05 | 2016-03-10 | Applied Materials, Inc. | Upper dome for epi chamber |
| KR20170070041A (ko) | 2014-10-14 | 2017-06-21 | 에바텍 아크티엔게젤샤프트 | Rf 커플링에 의한 막 응력 균일성 제어 및 rf 커플링을 채용한 웨이퍼 마운트 |
| US10269614B2 (en) | 2014-11-12 | 2019-04-23 | Applied Materials, Inc. | Susceptor design to reduce edge thermal peak |
| EP3265777B1 (en) | 2015-03-03 | 2020-07-08 | King Abdullah University Of Science And Technology | Methods of analyzing carbon nanostructures |
| KR102380156B1 (ko) | 2015-06-30 | 2022-03-29 | 삼성디스플레이 주식회사 | 플라즈마 화학 기상 증착 장치 |
| US10950477B2 (en) | 2015-08-07 | 2021-03-16 | Applied Materials, Inc. | Ceramic heater and esc with enhanced wafer edge performance |
| WO2017100136A1 (en) | 2015-12-07 | 2017-06-15 | Applied Materials, Inc. | Method and apparatus for clamping and declamping substrates using electrostatic chucks |
| US20170353994A1 (en) | 2016-06-06 | 2017-12-07 | Applied Materials, Inc. | Self-centering pedestal heater |
| US12456611B2 (en) | 2016-06-13 | 2025-10-28 | Applied Materials, Inc. | Systems and methods for controlling a voltage waveform at a substrate during plasma processing |
| US11069553B2 (en) | 2016-07-07 | 2021-07-20 | Lam Research Corporation | Electrostatic chuck with features for preventing electrical arcing and light-up and improving process uniformity |
| US10832936B2 (en) * | 2016-07-27 | 2020-11-10 | Lam Research Corporation | Substrate support with increasing areal density and corresponding method of fabricating |
| JP2018107433A (ja) | 2016-12-27 | 2018-07-05 | 東京エレクトロン株式会社 | フォーカスリング及び基板処理装置 |
| JP7541005B2 (ja) | 2018-12-03 | 2024-08-27 | アプライド マテリアルズ インコーポレイテッド | チャックとアーク放電に関する性能が改良された静電チャック設計 |
| WO2020149972A1 (en) | 2019-01-15 | 2020-07-23 | Applied Materials, Inc. | Pedestal for substrate processing chambers |
-
2019
- 2019-11-07 JP JP2021529277A patent/JP7541005B2/ja active Active
- 2019-11-07 US US16/677,491 patent/US11682574B2/en active Active
- 2019-11-07 KR KR1020217019349A patent/KR102864012B1/ko active Active
- 2019-11-07 WO PCT/US2019/060314 patent/WO2020117421A1/en not_active Ceased
- 2019-12-02 CN CN202021336306.1U patent/CN213242483U/zh active Active
- 2019-12-02 CN CN201922123241.6U patent/CN210956592U/zh active Active
- 2019-12-02 CN CN202310691393.4A patent/CN116525400A/zh active Pending
- 2019-12-02 CN CN201911214538.1A patent/CN111261487B/zh active Active
- 2019-12-03 TW TW113139271A patent/TWI902496B/zh active
- 2019-12-03 TW TW112131443A patent/TWI870980B/zh active
- 2019-12-03 TW TW108144046A patent/TWI838431B/zh active
-
2023
- 2023-05-23 US US18/201,086 patent/US12211728B2/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111261487A (zh) * | 2018-12-03 | 2020-06-09 | 应用材料公司 | 具有改进的吸紧和电弧放电性能的静电吸盘设计 |
| US11682574B2 (en) | 2018-12-03 | 2023-06-20 | Applied Materials, Inc. | Electrostatic chuck design with improved chucking and arcing performance |
| CN116525400A (zh) * | 2018-12-03 | 2023-08-01 | 应用材料公司 | 具有改进的吸紧和电弧放电性能的静电吸盘设计 |
| US12211728B2 (en) | 2018-12-03 | 2025-01-28 | Applied Materials, Inc. | Electrostatic chuck design with improved chucking and arcing performance |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI902496B (zh) | 2025-10-21 |
| TW202027217A (zh) | 2020-07-16 |
| TWI870980B (zh) | 2025-01-21 |
| KR102864012B1 (ko) | 2025-09-23 |
| CN111261487A (zh) | 2020-06-09 |
| WO2020117421A1 (en) | 2020-06-11 |
| TW202507922A (zh) | 2025-02-16 |
| KR20210088723A (ko) | 2021-07-14 |
| US12211728B2 (en) | 2025-01-28 |
| US11682574B2 (en) | 2023-06-20 |
| CN210956592U (zh) | 2020-07-07 |
| US20200176296A1 (en) | 2020-06-04 |
| US20230298922A1 (en) | 2023-09-21 |
| TWI838431B (zh) | 2024-04-11 |
| CN116525400A (zh) | 2023-08-01 |
| TW202414674A (zh) | 2024-04-01 |
| CN111261487B (zh) | 2023-06-27 |
| JP7541005B2 (ja) | 2024-08-27 |
| JP2022509635A (ja) | 2022-01-21 |
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Legal Events
| Date | Code | Title | Description |
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| GR01 | Patent grant | ||
| GR01 | Patent grant |