CN207637742U - 等离子体处理腔室及用于等离子体处理腔室的环 - Google Patents

等离子体处理腔室及用于等离子体处理腔室的环 Download PDF

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Publication number
CN207637742U
CN207637742U CN201721058542.XU CN201721058542U CN207637742U CN 207637742 U CN207637742 U CN 207637742U CN 201721058542 U CN201721058542 U CN 201721058542U CN 207637742 U CN207637742 U CN 207637742U
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CN
China
Prior art keywords
ring
main body
processing chamber
plasma
edge ring
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201721058542.XU
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English (en)
Chinese (zh)
Inventor
艾伦·L·丹布拉
舍什拉伊·L·图尔什巴瓦勒
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Applied Materials Inc
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Applied Materials Inc
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Priority to CN201820980309.5U priority Critical patent/CN208908212U/zh
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Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D21/00—Measuring or testing not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
CN201721058542.XU 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环 Expired - Fee Related CN207637742U (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201820980309.5U CN208908212U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662378492P 2016-08-23 2016-08-23
US62/378,492 2016-08-23

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201820980309.5U Division CN208908212U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环

Publications (1)

Publication Number Publication Date
CN207637742U true CN207637742U (zh) 2018-07-20

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
CN201721058542.XU Expired - Fee Related CN207637742U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环
CN201710729052.6A Pending CN107768225A (zh) 2016-08-23 2017-08-23 用于半导体工艺模块的边环或工艺配件
CN201820980309.5U Expired - Fee Related CN208908212U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201710729052.6A Pending CN107768225A (zh) 2016-08-23 2017-08-23 用于半导体工艺模块的边环或工艺配件
CN201820980309.5U Expired - Fee Related CN208908212U (zh) 2016-08-23 2017-08-23 等离子体处理腔室及用于等离子体处理腔室的环

Country Status (5)

Country Link
US (3) US20180061696A1 (https=)
JP (1) JP7227692B2 (https=)
KR (2) KR20180022593A (https=)
CN (3) CN207637742U (https=)
TW (3) TW201818446A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768225A (zh) * 2016-08-23 2018-03-06 应用材料公司 用于半导体工艺模块的边环或工艺配件
CN113597659A (zh) * 2019-04-22 2021-11-02 应用材料公司 用于原位边缘环腐蚀监测的传感器和系统
CN113607714A (zh) * 2021-10-08 2021-11-05 成都齐碳科技有限公司 分子膜成膜或表征器件、装置、方法以及生物芯片

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6888007B2 (ja) 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハエッジリングの持ち上げに関する解決
CN108369922B (zh) 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
US10177018B2 (en) 2016-08-11 2019-01-08 Applied Materials, Inc. Process kit erosion and service life prediction
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
JP7033441B2 (ja) * 2017-12-01 2022-03-10 東京エレクトロン株式会社 プラズマ処理装置
US11538713B2 (en) * 2017-12-05 2022-12-27 Lam Research Corporation System and method for edge ring wear compensation
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
EP3562285A1 (de) * 2018-04-25 2019-10-30 Siemens Aktiengesellschaft Verbinden elektrischer bauelemente
JP7138474B2 (ja) * 2018-05-15 2022-09-16 東京エレクトロン株式会社 部品の修復方法及び基板処理システム
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
JP7045931B2 (ja) * 2018-05-30 2022-04-01 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN108766871A (zh) * 2018-06-13 2018-11-06 沈阳富创精密设备有限公司 一种应用于半导体行业的直接写入等离子喷涂技术
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11521872B2 (en) * 2018-09-04 2022-12-06 Applied Materials, Inc. Method and apparatus for measuring erosion and calibrating position for a moving process kit
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
US10903050B2 (en) * 2018-12-10 2021-01-26 Lam Research Corporation Endpoint sensor based control including adjustment of an edge ring parameter for each substrate processed to maintain etch rate uniformity
US11393663B2 (en) * 2019-02-25 2022-07-19 Tokyo Electron Limited Methods and systems for focus ring thickness determinations and feedback control
KR102904924B1 (ko) * 2019-03-06 2025-12-26 램 리써치 코포레이션 기판 프로세싱 시스템을 위한 조정가능한 에지 링의 두께를 측정하기 위한 측정 시스템
JP2020155489A (ja) * 2019-03-18 2020-09-24 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
WO2020214327A1 (en) 2019-04-19 2020-10-22 Applied Materials, Inc. Ring removal from processing chamber
US11479849B2 (en) * 2019-06-03 2022-10-25 Taiwan Semiconductor Manufacturing Company, Ltd. Physical vapor deposition chamber with target surface morphology monitor
US11913777B2 (en) * 2019-06-11 2024-02-27 Applied Materials, Inc. Detector for process kit ring wear
KR102689653B1 (ko) 2019-06-26 2024-07-31 삼성전자주식회사 센서 모듈 및 이를 구비하는 식각 장치
JP2021040076A (ja) * 2019-09-04 2021-03-11 東京エレクトロン株式会社 環状部材、基板処理装置及び基板処理装置の制御方法
JP7394601B2 (ja) * 2019-11-28 2023-12-08 東京エレクトロン株式会社 プラズマ処理装置及び測定方法
JP7471810B2 (ja) * 2019-12-13 2024-04-22 東京エレクトロン株式会社 リングアセンブリ、基板支持体及び基板処理装置
JP7657802B2 (ja) * 2019-12-19 2025-04-07 ラム リサーチ コーポレーション 消耗チャンバ部品におけるカプセル化ｒｆｉｄ
US11668553B2 (en) * 2020-02-14 2023-06-06 Applied Materials Inc. Apparatus and method for controlling edge ring variation
KR102822822B1 (ko) * 2020-02-25 2025-06-19 에스케이하이닉스 주식회사 에지링 모니터링 장치, 에지링 관리 시스템 및 방법
US11915953B2 (en) * 2020-04-17 2024-02-27 Applied Materials, Inc. Apparatus, systems, and methods of measuring edge ring distance for thermal processing chambers
JP7580328B2 (ja) * 2020-06-05 2024-11-11 東京エレクトロン株式会社 プラズマ処理装置
CN111463165B (zh) * 2020-06-18 2020-09-29 中芯集成电路制造(绍兴)有限公司 固定机构、半导体机台及晶圆清洗装置
US20220051912A1 (en) * 2020-08-12 2022-02-17 Taiwan Semiconductor Manufacturing Company Limited Gas flow control during semiconductor fabrication
KR102867342B1 (ko) 2020-11-26 2025-10-01 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조방법
DE102020134672A1 (de) * 2020-12-22 2022-06-23 Krones Aktiengesellschaft Verschleißteil, Herstellungsverfahren und Vorrichtung zur Überwachung eines Verschleißzustands
US20220404716A1 (en) * 2021-06-17 2022-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Inspection tool for a semiconductor processing tool and methods of use
KR102632552B1 (ko) 2021-07-23 2024-02-02 한국표준과학연구원 플라즈마 진단기능 및 유전체 두께 측정기능을 갖는 센서, 이를 구비하는 공정장치 및 공정시스템
KR102911513B1 (ko) * 2021-08-17 2026-01-12 도쿄엘렉트론가부시키가이샤 반도체 플라즈마 공정 챔버 내의 소모성 부품의 특성을 측정하기 위한 광센서
WO2024047835A1 (ja) * 2022-09-01 2024-03-07 三菱電機株式会社 データ収集分析システム、測定データ収集ユニット、および、データ収集分析方法
CN119013770B (zh) * 2022-10-07 2025-11-14 东京毅力科创株式会社 基片处理系统和边缘环的安装方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03148118A (ja) * 1989-11-02 1991-06-24 Fujitsu Ltd 半導体製造装置
JPH05136098A (ja) * 1991-11-15 1993-06-01 Seiko Epson Corp 半導体装置の製造装置及び半導体装置の製造方法
JPH08203865A (ja) * 1995-01-23 1996-08-09 Hitachi Ltd プラズマ処理装置
US6077387A (en) * 1999-02-10 2000-06-20 Stmicroelectronics, Inc. Plasma emission detection for process control via fluorescent relay
KR100545034B1 (ko) * 2000-02-21 2006-01-24 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 시료의 처리방법
US7349090B2 (en) * 2000-09-20 2008-03-25 Kla-Tencor Technologies Corp. Methods and systems for determining a property of a specimen prior to, during, or subsequent to lithography
US6891627B1 (en) * 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
JP4657521B2 (ja) * 2001-08-28 2011-03-23 東京エレクトロン株式会社 プラズマ処理装置
US6894769B2 (en) * 2002-12-31 2005-05-17 Tokyo Electron Limited Monitoring erosion of system components by optical emission
US6806949B2 (en) * 2002-12-31 2004-10-19 Tokyo Electron Limited Monitoring material buildup on system components by optical emission
JP2004335841A (ja) * 2003-05-09 2004-11-25 Tokyo Electron Ltd プラズマ処理装置の予測装置及び予測方法
US7001482B2 (en) * 2003-11-12 2006-02-21 Tokyo Electron Limited Method and apparatus for improved focus ring
JP4365226B2 (ja) * 2004-01-14 2009-11-18 株式会社日立ハイテクノロジーズ プラズマエッチング装置及び方法
US7233878B2 (en) * 2004-01-30 2007-06-19 Tokyo Electron Limited Method and system for monitoring component consumption
JP4006004B2 (ja) 2004-12-28 2007-11-14 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US7602116B2 (en) * 2005-01-27 2009-10-13 Advanced Optoelectronic Technology, Inc. Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof
JP4833890B2 (ja) * 2007-03-12 2011-12-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ分布補正方法
JP2009245988A (ja) * 2008-03-28 2009-10-22 Tokyo Electron Ltd プラズマ処理装置、チャンバ内部品及びチャンバ内部品の寿命検出方法
US7884925B2 (en) * 2008-05-23 2011-02-08 Lam Research Corporation Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materials
JP2010034416A (ja) * 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5496630B2 (ja) * 2009-12-10 2014-05-21 東京エレクトロン株式会社 静電チャック装置
US8740206B2 (en) * 2010-01-27 2014-06-03 Applied Materials, Inc. Life enhancement of ring assembly in semiconductor manufacturing chambers
JP5728770B2 (ja) * 2011-02-03 2015-06-03 株式会社昭和真空 基板処理装置、基板処理方法、ならびに、プログラム
CN103187225B (zh) * 2011-12-28 2015-10-21 中微半导体设备(上海)有限公司 一种可监测刻蚀过程的等离子体处理装置
GB2499816A (en) * 2012-02-29 2013-09-04 Oxford Instr Nanotechnology Tools Ltd Controlling deposition and etching in a chamber with fine time control of parameters and gas flow
DK3108205T3 (da) * 2014-02-18 2022-09-12 Novelis Inc Foto-akustisk indretning og fremgangsmåde til kontaktløs måling af tynde lag
JP6383647B2 (ja) * 2014-11-19 2018-08-29 東京エレクトロン株式会社 測定システムおよび測定方法
US10041868B2 (en) * 2015-01-28 2018-08-07 Lam Research Corporation Estimation of lifetime remaining for a consumable-part in a semiconductor manufacturing chamber
US10014198B2 (en) * 2015-08-21 2018-07-03 Lam Research Corporation Wear detection of consumable part in semiconductor manufacturing equipment
US20180061696A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Edge ring or process kit for semiconductor process module

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107768225A (zh) * 2016-08-23 2018-03-06 应用材料公司 用于半导体工艺模块的边环或工艺配件
CN113597659A (zh) * 2019-04-22 2021-11-02 应用材料公司 用于原位边缘环腐蚀监测的传感器和系统
CN113607714A (zh) * 2021-10-08 2021-11-05 成都齐碳科技有限公司 分子膜成膜或表征器件、装置、方法以及生物芯片
CN113607714B (zh) * 2021-10-08 2022-01-11 成都齐碳科技有限公司 分子膜成膜或表征器件、装置、方法以及生物芯片

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Publication number Publication date
US20190348317A1 (en) 2019-11-14
US20230296512A1 (en) 2023-09-21
KR20180022593A (ko) 2018-03-06
KR102497659B1 (ko) 2023-02-07
US20180061696A1 (en) 2018-03-01
TW201818446A (zh) 2018-05-16
CN107768225A (zh) 2018-03-06
JP7227692B2 (ja) 2023-02-22
CN208908212U (zh) 2019-05-28
JP2018032857A (ja) 2018-03-01
TWM598516U (zh) 2020-07-11
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