CN203134782U - 电路零件 - Google Patents

电路零件 Download PDF

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Publication number
CN203134782U
CN203134782U CN2012205574244U CN201220557424U CN203134782U CN 203134782 U CN203134782 U CN 203134782U CN 2012205574244 U CN2012205574244 U CN 2012205574244U CN 201220557424 U CN201220557424 U CN 201220557424U CN 203134782 U CN203134782 U CN 203134782U
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China
Prior art keywords
chip
substrate
electrode
conducting particles
projected electrode
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CN2012205574244U
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English (en)
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佐藤和也
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Showa Denko Materials Co ltd
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Hitachi Chemical Co Ltd
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    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/14—Structural association of two or more printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/11—Printed elements for providing electric connections to or between printed circuits
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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Abstract

本实用新型的目的在于，提供能够使基板与IC芯片实现良好连接的电路零件。本实用新型的电路零件是利用含有导电粒子的导电性粘接剂将IC芯片连接于基板形成的电路零件，在IC芯片的安装面上，设置凸出电极与除了设置凸出电极的部分外的非电极面。在基板表面与非电极面之间，各导电粒子以接触基板的表面及非电极面双方接触的第1状态配置。在基板表面与凸出电极之间以比第1状态扁平的第2状态陷入凸出电极地配置各导电粒子。

Description

电路零件
技术领域
本实用新型涉及电路零件及其制造方法。 
背景技术
将液晶显示用玻璃面板等的基板与液晶驱动用ＩＣ等ＩＣ芯片加以连接制造电路零件时，有时候使用含有导电粒子的导电性粘接剂。使用导电性粘接剂制造电路零件的情况下，可将设置于IC芯片上的多个凸出电极一次连接于基板。例如，特开2010－251789号公报中，借助于含有导电粒子以及光固化性树脂的各向异性导电膜将LCD面板与IC芯片加以接合。然后，隔着各向异性导电薄膜将LCD面板与IC芯片压接之前，对其施加超声波，在施加超声波后，一边隔着各向异性导电膜将LCD面板与IC芯片加以压接，一边对各向异性导电膜照射光线，以此抑制LCD面板的翘曲。 
实用新型内容
但是，近年来，基板以及IC芯片朝大型化和薄膜化方向发展。大而薄的基板以及IC芯片容易变形。利用导电性粘接剂连接这样的IC芯片和基板时，填充于没有凸出电极的部分的导电性粘接剂的热收缩或固化收缩，导致基板和IC芯片相互牵拉，基板和IC芯片在没有凸出电极的部分发生变形，间隔变窄，有整体上发生翘曲的情况。基板和IC芯片一旦翘曲，在基板与IC芯片之间的间隔扩大的部分，凸出电极与基板之间的间隔扩大，凸出电极与基板不能够充分接触，有时候不能够实现基板与IC芯片的良好连接。 
本实用新型是为了解决这样的课题而作出的，其目的在于提供能够使基板与IC芯片实现良好接触的电路零件及其制造方法。 
本实用新型的一个侧面的电路零件，是利用导电性粘结剂将IC芯片连接于基板而形成的电路零件，在IC芯片的安装面上设置有凸出电极和除了形成有凸出电极的部分之外的非电极面，在基板的表面与非电极面之间，存在与基板的表面及非电极面双方接触的第1状态的导电粒子，在基板表面与凸出电极之间，存在以比第1状态扁平的第2状态陷入凸出电极而配置的导电粒子。 
通过采用本实用新型的一个侧面的电路零件，在制造电路零件时，由于基板表面与非电极面之间填充的导电性粘接剂的热收缩或固化收缩，基板和IC芯片相互牵拉要发生变形时，与基板的表面和非电极面两者接触着配置的第1状态的导电粒子阻止基板及IC芯片的变形，抑制基板及IC芯片的翘曲。从而，抑制了基板的表面与凸出电极之间的间隔的扩大，利用以陷入凸出电极的方式配置的第2状态的导电粒子，使凸出电极与基板形成良好连接。因此，能够很好地将基板与IC芯片加以连接。 
又，本实用新型的另一侧面的电路零件，是利用导电性粘接剂，将IC芯片连接于基板形成的电路零件，在IC芯片的安装面上设置有凸出电极与除了形成有凸出电极的部分之外的非电极面，在基板表面与非电极面之间存在导电粒子，该导电粒子在凸出电极的高度方向的尺寸与基板表面和非电极面之间的间隔大致一致。 
通过采用本实用新型的另一侧面的电路零件，在基板的表面与非电极面之间存在导电粒子，该导电粒子在凸出电极的高度方向的尺寸与基板的表面和非电极面之间的间隔大致一致，且该导电粒子被基板的表面与非电极面夹着。从而，基板的表面与非电极面之间填充的导电性粘接剂热收缩或固化收缩，导致基板和IC芯片相互牵拉而要发生变形时，基板的表面与非电极面夹着的导电粒子能够阻止基板和IC芯片的变形，抑制基板和IC芯片的翘曲。从而能够抑制基板的表面与凸出电极之间的间隔的扩大，使凸出电极与基板保持良好连接。借助于此，能够使基板与IC芯片连接良好。 
还有，基板也可以是玻璃基板。在这种情况下，能够使玻璃基板与IC芯片很好地连接。又，凸出电极也可以具有2～5μm的高度。又，基板也可以是0.1～0.3mm厚度的基板。又，IC芯片的厚度也可以是0.1～0.3mm。又，凸出电极也可以比导电粒子柔软。另外，IC芯片可以为长方形板状，凸出电极可以在IC芯片的短边方向分隔地设置有多个，在IC芯片的短边方向上，相邻的凸出电极的内侧的端部之间的间隔中最大的间隔，与配置在两端部的凸出电极的外侧的端部之间的间隔的比率可以为0.3～0.9。 
本实用新型的一个侧面的电路零件的制造方法是利用含有导电粒子的导电性粘接剂将IC芯片连接于基板的电路零件制造方法，在基板的表面与IC芯片之间填充含有比IC芯片的凸出电极的高度大的平均粒径的导电粒子的导电性粘接剂之后，将基板与IC芯片压接在一起。 
通过采用本实用新型的一个侧面的电路零件的制造方法，基板和IC芯片利用含有比IC芯片的凸出电极的高度大的平均粒径的导电粒子的导电性粘接剂连接。从而，介于在IC芯片的安装面上的除了形成有凸出电极的部分之外的非电极面与基板的表面之 间的导电粒子被压缩到凸出电极的高度为止，由非电极面与基板的表面夹着。从而，由于填充于基板的表面与非电极面之间的导电性粘接剂的热收缩或固化收缩，基板和IC芯片相互牵拉要发生变形的情况下，非电极面与基板的表面夹着的导电粒子阻碍基板和IC芯片的变形，抑制基板和IC芯片的翘曲。借助于此，可以抑制凸出电极与基板之间的间隔的扩大，使凸出电极与基板形成良好连接。因此，能够很好地将基板与IC芯片加以连接。 
在这里，也可以使导电性粘接剂介于其间，使压接前的导电性粘接剂的厚度为导电粒子的平均粒径的80％以上200％以下。这样一来，借助于压接，凸出电极推开的粘接剂的量相当于与导电粒子的平均粒径大致相同的高度的相应的量，从凸出电极与基板之间流向凸出电极旁边的导电性粘接剂的量减少。因此能够使导电粒子很好地处在凸出电极与基板之间。从而能够将基板与IC芯片很好地加以连接。 
又可以使在IC芯片的安装面上除了形成凸出电极的部分以外的非电极面与基板的表面之间的压接后的间隔成为如下值的方式压接基板与IC芯片，即，压接后的间隔为从导电粒子中去掉粒径大的上位1％的导电粒子后剩下的导电粒子的最大粒径的70％以上100％以下。这样一来，能够在非电极面与基板的表面之间很好地夹着导电粒子。从而，即使是导电性粘接剂热收缩或固化收缩造成基板和IC芯片相互牵拉，被夹着的导电粒子能够进一步阻止基板和IC芯片的变形，基板和IC芯片的翘曲得以抑制。从而，能够更好地将基板与IC芯片加以连接。 
又可以这样压接基板和IC芯片，即借助于压接，使得介于凸出电极与基板的表面之间的导电粒子在凸出电极的高度方向上的压接后的尺寸为导电粒子的平均粒径的15％以上80％以下。这样一来，借助于压接能够使导电粒子很好地陷入凸出电极，基板与IC电极能够实现良好的连接。 
通过采用本实用新型，能够提供可以很好地将基板与IC芯片加以连接的电路零件及其制造方法。 
附图说明
图1是示出使用本实施方式的电路零件的电子设备的俯视图。 
图2是示出图1的电路零件的俯视图。 
图3是示出图2中的III－III线箭头向视剖面的示意剖面图。 
图4是示出图3中的A部的剖面图。 
图5（a）、图5（b）是示出图3中的B部的剖面图。 
图6（a）、图6（b）是示出本实施方式的电路零件的制造方法的示意剖面图。 
图7（a）、图7（b）是示出接着图6（a）、图6（b）的制造方法的示意剖面图。 
图8是示出已有的电路零件的示意剖面图。 
图9是示出已有的电路零件的示意剖面图。 
图10是示出已有的电路零件的示意剖面图。 
具体实施方式
下面参照附图对本实施方式的电路零件及其制造方法进行详细说明。 
[基板和IC芯片] 
图1是示出使用本实施方式的电路零件的电子设备的俯视图。图2是示出图1的电路零件的俯视图，图3是示出图2中的III－III线箭头向视剖面的示意剖面图。还有，在图3中，下述导电性粘接剂5中含有的导电粒子的图示省略。 
如图1所示，电路零件1被使用于例如触摸屏等电子设备2。电子设备2具备液晶面板3和IC芯片4。 
液晶面板3具有玻璃基板31和液晶显示部32。玻璃基板31呈矩形板状（长方形板状），在其表面33与液晶显示部32以及IC芯片4的凸出电极42（下面叙述）对应地形成未图示的电路电极。电路电极可以由例如合金（含有铝以及钕的合金或者含有铝、钕以及钼的合金等）、或多层的金属层（在二层的钛膜之间具有铝膜的三层金属层等）等的金属形成。在电路电极上被覆盖有ITO（铟-锡氧化物）或者IZO（铟-锌氧化物）等。该玻璃基板31，其大小为例如20～300mm×20～400mm左右，其厚度为例如0.1～0.3mm左右，形成比较大而且薄的构件。电路电极的厚度为例如100～200nm左右。形成玻璃基板31的材料可以采用例如无碱玻璃等。液晶显示部32被安装于玻璃基板31表面33，连接于上述电路电极。 
IC芯片4是呈现比玻璃基板31小的矩形板状（长方形板状）的电子零件，被安装于玻璃基板31的表面33。该IC芯片4与液晶显示部32保持间距配置，连接于上述玻璃基板31的电路电极。然后如图3所示，电路零件1使含有导电粒子的导电性粘接剂5介入IC芯片4与玻璃基板31之间，将IC芯片与玻璃基板31通过压接方法连接形成（详细情况将在下面叙述）。 
IC芯片4其尺寸为例如0.6～3.0mm×10～40mm左右，其厚度为例如0.1～0.3mm左右，与玻璃基板31一样形成比较大而且薄的构件。IC芯片4中，与玻璃基板31 相对的面构成安装面41。该安装面41上形成多个从安装面41突出的凸出电极42。又，在安装面41，除了形成凸出电极42的部分以外的部分构成非电极面43。安装面41相反侧的面构成非安装面44。形成IC芯片4的主体部分的材料可以使用例如硅等。又，形成凸出电极42的材料可以使用例如Au等，凸出电极42比导电性粘接剂5中含有的导电粒子柔软。 
如图2所示，沿着安装面41的一个长边44a，多个凸出电极42大致等间隔地配置为一列。又，沿着安装面41的另一长边44b，多个凸出电极42大致等间隔地在3列上配置，呈交错排列状。在长边44a侧的凸出电极42的列与长边44b侧的凸出电极42的列之间形成间隔dx。还有，在长边44a侧配置的一列凸出电极42构成输入侧的电极，在长边44b侧配置的3列凸出电极42构成输出侧的电极。凸出电极42其高度（从非电极面43起的高度）为例如2～5μm左右。从其它的观点来看，IC芯片4为长方形板状，凸出电极42在IC芯片4的宽度方向（短边方向，图2中的左右方向）上，被分隔地设有多个。在IC芯片4的宽度方向上，相邻的凸出电极42、42的内侧的端部之间的间隔中最大间隔dx，与设在两端部的凸出电极42、42的外侧的端部之间的间隔d0的比率为0.3～0.9。 
[导电性粘接剂] 
下面对将玻璃基板31与IC芯片4加以连接的导电性粘接剂5进行详细说明。作为导电性粘接剂5的粘接剂成分，可以广泛使用通过热或光显示其固化性的材料，例如可以使用环氧树脂系粘接剂或丙烯酸系粘接剂。又，由于连接后的耐热性和耐湿性优异，使用交联性材料是理想的。其中包含作为热固化性树脂的环氧树脂为主成分的环氧树脂系粘接剂由于能够在短时间内固化，连接工作容易进行，在分子结构上显示出优异的粘接性，由于有上述等特征，因此是理想的材料。 
作为环氧树脂系粘接剂的具体例子，可举例如高分子量环氧树脂、固态环氧树脂、或液态环氧树脂、或以这些聚氨酯、聚酯、丙烯酸橡胶、丁腈橡胶（NBR）、合成线状聚酰胺等变性的环氧树脂为主成分的粘接剂。环氧树脂系粘接剂通常是在构成主成分的上述环氧树脂中添加固化剂、催化剂、耦合（coupling）剂、填充剂等形成的。 
丙烯酸系粘接剂的具体例子，可以举出有丙烯酸、丙烯酸酯、甲基丙烯酸酯、以及丙烯腈中的至少一种作为单体成分的聚合体或共聚合体。 
还有，从抑制IC芯片4的线膨胀系数与玻璃基板31的线膨胀系数之差产生的玻璃基板31的翘曲的考虑出发，优选是将能够发挥缓和内部应力的作用的成分配到粘接剂成分中。具体地说，优选是在粘接剂成分中配入丙烯酸橡胶或弹性体成分。又，国际 公开第98/44067号记载的游离基（ラジカル）固化粘接剂也可以使用。 
导电性粘接剂5中包含的导电粒子有例如Au、Ag、Pt、Ni、Cu、W、Sb、Sn、钎焊料等金属或碳的粒子。或者也可以使用以非导电性的玻璃、陶瓷、塑料等作为内核，用上述金属或碳包覆该内核的包覆粒子。压接前的导电粒子的形状可以是例如大致为球形的形状或径向上有多个突起的形状（星形）等。压接前的导电粒子的平均粒径da从分散性、导电性出发，优选是1～18μm左右，在这里为2～4μm左右。在这个范围内，优选为选择平均粒径da比凸出电极42的高度大的导电粒子。还有，导电粒子的平均粒径da比凸出电极42的高度稍小（小20％左右）的情况也可以允许。这是因为导电粒子的平均粒径da比凸出电极42的高度小的情况下，虽然导电性粘接剂的热收缩或固化收缩有时候会引起IC芯片4稍微向玻璃基板31侧翘曲，但是由于该翘曲，玻璃基板31的表面33与IC芯片4的非电极面43之间的间隔变得狭窄，结果与导电粒子接触，能够抑制其进一步翘曲。在这里，所谓平均粒径定义为用例如库尔特计算器求出的平均直径。还可以使用以绝缘层覆盖导电粒子形成的绝缘层包覆粒子，从提高相邻的电极之间的绝缘性的考虑出发，也可以同时使用导电粒子和绝缘性粒子。 
导电性粘接剂5中导电粒子的配比，从电极之间的连接电阻和短路考虑，相对于粘接剂层中包含的100体积份的粘接剂成分，采用例如0.1～30体积份，在这里，采用5～20体积份。借助于此，凸出电极42捕捉到的导电粒子的数目即使是最低，也能够调节到3个以上。 
[导电粒子] 
下面对电路零件1中介于基板31与IC芯片4之间的导电粒子进行详细说明。图4是示出图3中的A部的剖面图，图5（a）、图5（b）是示出图3中的B部的剖面图。 
如图4所示，在玻璃基板31的表面33与非电极面43之间配置导电粒子51a。该导电粒子51a在凸出电极42的高度方向上被表面33和非电极面43略微压缩，形成与这些表面33和非电极面43两者接触的第1状态。也就是说，在导电粒子51a上，其凸出电极42的高度方向上的尺寸h1和玻璃基板31的表面33与非电极面43之间的间隔大致一致。在玻璃基板31的表面33与非电极面43之间，也可以存在不是第1状态的导电粒子（与表面33与非电极面43的至少一方没有接触的导电粒子）。 
如图5（a）所示，在相互接触的玻璃基板31的表面33与凸出电极42之间配置导电粒子51b。如上所述，凸出电极42由于比导电粒子柔软，压接时将导电粒子51b压缩，同时凸出电极42相应于导电粒子51b变形。因此，导电粒子51b以陷入凸出电极 42的状态介于玻璃基板31的表面33与凸出电极42之间。而且导电粒子51b在凸出电极42的高度方向上被表面33和凸出电极42压缩，构成比上述第1状态的导电粒子51a还要扁平的第2状态。这样，比第1状态扁平的第2状态的导电粒子51b充分陷入凸出电极42的情况下，玻璃基板31与IC芯片4形成良好的连接。还有，如图5（b）所示，也可以在玻璃基板31的表面33与凸出电极42之间形成间隙，在这种情况下，也能够借助于导电粒子51b良好地确保玻璃基板31与IC芯片4之间的连接。在玻璃基板31的表面33与凸出电极42之间，也可以存在不是第2状态的导电粒子（不比第1状态扁平的导电粒子）。 
[电路零件的制造方法] 
下面对电路零件的制造方法进行说明。 
图6（a）、图6（b）是示出本实施方式的电路零件的制造方法的示意剖面图，图7（a）、图7（b）是示出接着图6（a）、图6（b）的制造方法的示意剖面图。还有，在图6（a）、图6（b）、图7（a）、图7（b）中，与图3一样省略导电性粘接剂5中包含的导电粒子的图示。 
首先，如图6（a）所示，准备玻璃基板31。 
接着，如图6（b）所示，在玻璃基板31的表面33上配置导电性粘接剂5。这时导电性粘接剂5的厚度dt优选为压接前的导电粒子的平均粒径da的80％以上200％以下，进一步优选为95％以上160％以下，更优选为100％以上130％以下。这样一来，压接时凸出电极42推开的导电性粘接剂5的量相当于与导电粒子的平均粒径da大致相同（约平均粒径da的80％以上200％以下）的高度的相应的量，能够减少从凸出电极42与玻璃基板31之间流向凸出电极42旁边的导电性粘接剂5的量。 
接着如图7（a）所示，准备IC芯片4，使IC芯片4的安装面41与玻璃基板31的表面33隔着导电性粘接剂5相对。 
接着如图7（b）所示，压接玻璃基板31与IC芯片4将其连接。这时玻璃基板31的表面33与IC芯片4的非电极面43之间的间隔dy，优选为从导电性粘接剂5中包含的导电粒子中去掉粒径大的上位1％的导电粒子后剩下的导电粒子的最大粒径d99的70％以上100％以下，进一步优选为80％以上98％以下，更优选为90％以上95％以下。换句话说，介于玻璃基板31的表面33与非电极面43之间的导电粒子51a中，凸出电极42的高度方向上的尺寸h1（参照图4），优选为上述最大粒径d99的70％以上100％以下，进一步优选为80％以上98％以下，更优选为90％以上95％以下。这样一来，可以利用玻璃基板31的表面33和非电极面43适当压缩导电粒子51a，能够在表面33与非电极面43之 间很好地夹住导电粒子51a。还有，最大粒径d99可以用例如以下所述方法决定。也就是说，首先利用库尔特计算器（Coulter counter）测定导电性粘接剂5中包含的导电粒子的粒径分布。然后在测定粒子中去掉粒径大的上位1％的粒子，将剩下的99％的粒子中的最大粒径决定为最大粒径d99。 
又，压接时介于凸出电极42与玻璃基板31的表面33之间的导电粒子51b中，凸出电极42的高度方向的尺寸h2（参照图5（a）、图5（b））优选为压接前的导电粒子的平均粒径da的15％以上80％以下，进一步优选为30％以上80％以下。这样一来，通过压接导电粒子51b被压扁的程度与被陷入到凸出电极42的程度之间的平衡变得良好。 
还有，压接时，导电粒子51b陷入凸出电极42，凸出电极42与玻璃基板31实现良好连接时，在与凸出电极42对应的位置上，从与玻璃基板31的表面33相反侧的表面（非安装面）观察到由陷入凸出电极42的导电粒子51b产生的压痕。从而，为了判断凸出电极42与玻璃基板31是否实现良好的连接，只要从玻璃基板31的非安装面上，确认是否在与凸出电极42对应的位置上形成压痕即可。 
在上面所述的电路零件1的情况下，制造电路零件1时，长边44a侧的凸出电极42的列与长边44b侧的凸出电极42的列之间的间隔dx（参照图2）上，由于在玻璃基板31的表面33与非电极面43之间填充的导电性粘接剂5的热收缩或固化收缩，玻璃基板31和IC芯片4相互牵拉要发生翘曲时，与玻璃基板31的表面33和非电极面43双方接触着配置的第1状态的导电粒子51a阻碍玻璃基板31和IC芯片4的翘曲。因此能够抑制玻璃基板31和IC芯片4的翘曲。 
换句话说，在电路零件1的情况下，介于玻璃基板31的表面33与非电极面43之间的导电粒子51a，由于凸出电极42的高度方向的尺寸h1和玻璃基板31的表面33与非电极面43之间的间隔大致一致，因此，被表面33与非电极面43夹着。从而，填充于玻璃基板31的表面33与非电极面43之间的导电性粘接剂5的热收缩或固化收缩导致玻璃基板31和IC芯片4相互牵拉要发生变形时，被玻璃基板31的表面33与非电极面43夹着的导电粒子51a阻止玻璃基板31和IC芯片4的变形。因此，玻璃基板31和IC芯片4的翘曲得以抑制。 
在这里，图8、图9以及图10是示出已有的电路零件的示意剖面图。还有，在图8、图9以及图10中，与图3一样，导电性粘接剂90中包含的导电粒子的图示省略。 
如图8、图9以及图10所示，在已有的电路零件60的情况下，IC芯片80的凸出电极82的高度比本实施方式的电路零件1的凸出电极42（参照图3）大，而且也 比导电性粘接剂90中含有的导电粒子的平均粒径大，因此在玻璃基板71的表面73与IC芯片80的非电极面83之间，没有介入与这些表面73和非电极面83双方接触的导电粒子。从而在凸出电极82的列间的间隔dx中，玻璃基板71的表面73与非电极面83之间填充的导电性粘接剂90一旦热收缩或固化收缩，即有可能由于玻璃基板71和IC芯片80相互牵拉，总体上发生翘曲。另外，在图8中，示出了IC芯片80发生翘曲的情况，在图9中，示出了玻璃基板71发生翘曲的情况，在图10中，示出了玻璃基板71和IC芯片80发生翘曲的情况。例如，IC芯片80和玻璃基板71为相同厚度时，如图9所示，有时玻璃基板71发生翘曲。一旦玻璃基板71和IC芯片80发生翘曲，外侧的凸出电极82与玻璃基板71的表面73之间的间隔扩大，有时候凸出电极81与玻璃基板71不能够很好连接。而且在这样的状态下，有时候从玻璃基板71的非安装面不能观察到与外侧的凸出电极82对应的位置上的压痕。 
与此相反，在本实施方式的电路零件1的情况下，如上所述，由于玻璃基板31和IC芯片4的翘曲受到抑制，玻璃基板31的表面33与凸出电极42之间的间隔的扩大受到抑制，导电粒子51b很好地陷入凸出电极42，玻璃基板31与凸出电极42形成良好连接。借助于此，能够很好地将玻璃基板31与IC芯片4加以连接。而且由于导电粒子51b很好地陷入凸出电极42而形成压痕，可以从玻璃基板31的非安装面确认玻璃基板31与IC芯片4形成良好连接。 
又，通常由于玻璃基板比较硬，电路零件不是薄型的情况下，如上所述的玻璃基板和IC芯片的翘曲引起的连接不良的情况很少发生。而像本实施方式的电路零件1那样，玻璃基板31为薄型的情况下，玻璃基板31容易发生翘曲，因此能够更好发挥本实用新型抑制基板和IC芯片的翘曲的效果。另外，像本实施方式的电路零件1这样，IC芯片4较大时（IC芯片4的宽度方向的长度（图1中的上下方向的长度）长的情况下），变得更加容易发生翘曲，因此，能够进一步发挥抑制翘曲这一本实用新型的效果。另外，像本实施方式的电路零件1这样，IC芯片4的宽度方向上，相邻的凸出电极42、42的内侧的端部之间的间隔中的最大间隔dx，与配置在两端部的凸出电极42、42的外侧的端部之间的间隔d0的比率为0.3～0.9，存在比较大的间隔dx时，变得更加容易发生翘曲，因此，能够进一步发挥抑制翘曲这一本实用新型的效果。 
又，本实施方式的电路零件1的制造方法中，玻璃基板31和IC芯片4利用导电性粘接剂5连接，该导电性粘接剂含有具有比IC芯片4的凸出电极42的高度大的平均粒径的导电粒子。从而，如上所述，介于玻璃基板31的表面33和非电极面43之间的 导电粒子51a被压缩到凸出电极42的高度，被非电极面43和玻璃基板31的表面33夹着。因此，玻璃基板31的表面33与非电极面43之间填充的导电性粘接剂5的热收缩或固化收缩造成玻璃基板31和IC芯片4相互牵拉要发生变形时，被非电极面43和玻璃基板31的表面33夹着的导电粒子51a阻止玻璃基板31和IC芯片4的变形，抑制玻璃基板31和IC芯片4的翘曲。借助于此，凸出电极42与玻璃基板31之间的间隔的扩大得到抑制，凸出电极42与玻璃基板31之间形成良好连接。因此能够将玻璃基板31与IC芯片4很好地加以连接。 
又，在本实施方式的电路零件1的制造方法中，由于有导电性粘接剂5介入，而且压接前的导电性粘接剂5的厚度dt为压接前的导电粒子的平均粒径da的80％以上200％以下，因此由于压接，凸出电极42推开的导电性粘接剂5的量相当于与导电粒子的平均粒径da大致相同（平均粒径da的约80％以上200％以下）的高度的相应的量，从凸出电极42与玻璃基板31之间流向凸出电极42旁边的导电性粘接剂5的量减少。因此，能够使导电粒子51b很好地介入凸出电极42与玻璃基板31之间。从而，能够很好地实现玻璃基板31与IC芯片4的连接。 
又，本实施方式的电路零件1的制造方法中，对玻璃基板31与IC芯片4进行压接，使非电极面43与玻璃基板31的表面33之间的压接后的间隔dy为导电粒子中去掉粒径大的上位1％的导电粒子后剩下的导电粒子的最大粒径ｄ99的70％以上100％以下，因此能够利用玻璃基板31的表面33和非电极面43将导电粒子51a适度压缩，能够很好地将导电粒子51a夹在玻璃基板31表面33与非电极面43之间。从而，由于导电性粘接剂5的热收缩或固化收缩，导致的玻璃基板31与IC芯片4相互牵拉而要产生变形时，很好地被夹着的导电粒子51a能够进一步阻止玻璃基板31和IC芯片4的变形，进一步抑制玻璃基板31及IC芯片4的翘曲。从而，能够使玻璃基板31与IC芯片4实现更好的连接。 
又，本实施方式的电路零件1的制造方法中，对玻璃基板31与IC芯片4进行压接，使介于凸出电极42与玻璃基板31的表面33之间的导电粒子51b的在凸出电极42的高度方向上的压接后的尺寸ｈ2，成为压接前导电粒子的平均粒径da的15％以上80％以下，因此，借助于压接，能够很好地使导电粒子51b陷入凸出电极42，能够实现玻璃基板31与IC芯片4的良好连接。 
以上对本实施方式的电路零件及电路零件的制造方法进行了说明，但是本实用新型不限定于上述本实施方式。例如，在上述本实施方式中，基板采用玻璃基板31，但是也可以采用例如具有金属配线的软带（Flexible tape）、可挠性印刷线路板等有机基 板、玻璃纤维增强的环氧树脂基板等玻璃纤维增强的有机基板、或纸酚醛树脂基板、陶瓷基板、叠层板等基板。 
另外，关于基板和IC芯片，矩形板状（长方形板状）包含实质上是矩形板状的情况。具体来说，矩形板状包括实施了倒角加工的形状，和角部为圆角的形状等。 

Claims (8)

1.一种电路零件，其是利用导电性粘接剂将IC芯片连接于基板而形成的电路零件，其特征在于， 
在所述IC芯片的安装面上设置有凸出电极和除了形成有所述凸出电极的部分之外的非电极面， 
在所述基板的表面与所述非电极面之间，存在与所述基板的表面及所述非电极面双方接触的第1状态的导电粒子， 
在所述基板的表面与所述凸出电极之间，存在以比所述第1状态扁平的第2状态陷入所述凸出电极而配置的导电粒子。 
2.一种电路零件，其是利用导电性粘接剂将IC芯片连接于基板而形成的电路零件，其特征在于， 
所述IC芯片的安装面上设置有凸出电极以及除了形成有所述凸出电极的部分之外的非电极面， 
在所述基板的表面与所述非电极面之间存在导电粒子，该导电粒子在所述凸出电极的高度方向的尺寸与所述基板的表面和所述非电极面之间的间隔大致一致。 
3.根据权利要求1或2所述电路零件，其特征在于，所述凸出电极的高度为2～5μｍ。 
4.根据权利要求1或2所述的电路零件，其特征在于，所述基板是玻璃基板。 
5.根据权利要求1或2所述的电路零件，其特征在于，所述基板的厚度为0.1～0.3mm。 
6.根据权利要求1或2所述的电路零件，其特征在于，所述IC芯片的厚度为0.1～0.3mm。 
7.根据权利要求1或2所述的电路零件，其特征在于，所述凸出电极比所述导电粒子柔软。 
8.根据权利要求1或2所述的电路零件，其特征在于， 
所述IC芯片为长方形板状， 
所述凸出电极在所述IC芯片的短边方向被分隔地配置有多个， 
在所述IC芯片的短边方向上，相邻的所述凸出电极的内侧的端部之间的间隔中最大的间隔，与配置在两端部的所述凸出电极的外侧的端部之间的间隔的比率为0.3～0.9。 
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JP2015135878A (ja) * 2014-01-16 2015-07-27 デクセリアルズ株式会社 接続体、接続体の製造方法、接続方法、異方性導電接着剤
KR102535557B1 (ko) * 2016-03-07 2023-05-24 삼성디스플레이 주식회사 표시 장치 및 전자 디바이스
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JP6719529B2 (ja) * 2018-11-08 2020-07-08 デクセリアルズ株式会社 電子部品、接続体、接続体の製造方法及び電子部品の接続方法
KR20210018700A (ko) * 2019-08-09 2021-02-18 삼성디스플레이 주식회사 접착 부재 및 이를 포함한 표시장치
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Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0291360U (zh) * 1988-12-29 1990-07-19
JP3198162B2 (ja) 1992-07-21 2001-08-13 シチズン時計株式会社 半導体集積回路装置の接続方法
TW277152B (zh) * 1994-05-10 1996-06-01 Hitachi Chemical Co Ltd
JP3360772B2 (ja) 1994-09-02 2002-12-24 日立化成工業株式会社 微細電極の接続構造および微細電極を持つ電子部品の検査方法
KR100643640B1 (ko) * 1997-02-27 2007-06-07 세이코 엡슨 가부시키가이샤 접속구조체,액정장치,전자기기와이방도전성접착제및그제조방법
JP2836035B2 (ja) 1997-07-04 1998-12-14 富士ゼロックス株式会社 電気的接続体
JP2000199915A (ja) * 1999-01-06 2000-07-18 Matsushita Electric Ind Co Ltd 液晶表示パネル
JP2000323523A (ja) 1999-05-07 2000-11-24 Sony Corp フリップチップ実装構造
US6255743B1 (en) 1999-05-26 2001-07-03 Active Power, Inc. Method and apparatus for providing an uninterruptible supply of electric power to a critical load
WO2000074023A1 (en) * 1999-05-31 2000-12-07 Citizen Watch Co., Ltd. Electrical connection structure and flat display device
JP2002231763A (ja) 2001-02-02 2002-08-16 Seiko Epson Corp 電気光学装置および電子機器
JP3711873B2 (ja) * 2001-02-19 2005-11-02 ソニーケミカル株式会社 バンプレスｉｃチップの製造方法
JP2002333639A (ja) * 2001-03-08 2002-11-22 Sharp Corp 液晶表示装置
JP2004035686A (ja) 2002-07-02 2004-02-05 Bridgestone Corp 異方性導電フィルム
CN2735377Y (zh) * 2004-08-31 2005-10-19 鸿富锦精密工业（深圳）有限公司 覆晶结构
JP2006206833A (ja) 2005-01-31 2006-08-10 Toshiba Matsushita Display Technology Co Ltd 異方導電性接着剤及びこれを用いた接続構造、接続方法
KR101298829B1 (ko) * 2005-03-04 2013-08-23 데쿠세리아루즈 가부시키가이샤 이방 도전성 접착제 및 이것을 이용한 전극의 접속 방법
JP4692544B2 (ja) * 2005-04-14 2011-06-01 パナソニック株式会社 電子回路装置およびその製造方法
TWI351670B (en) * 2006-05-18 2011-11-01 Au Optronics Corp Signal transmission assembly and display panel app
JP2008210908A (ja) * 2007-02-26 2008-09-11 Tokai Rubber Ind Ltd 電子部品の実装方法
JP4978493B2 (ja) * 2007-10-05 2012-07-18 日立化成工業株式会社 回路接続材料、接続構造体及びその製造方法
JP2009098407A (ja) * 2007-10-17 2009-05-07 Hitachi Displays Ltd 表示装置
JP2010251789A (ja) 2010-06-22 2010-11-04 Sony Chemical & Information Device Corp 接合体及びその製造方法
JP5738013B2 (ja) 2011-03-07 2015-06-17 デクセリアルズ株式会社 異方性導電フィルム、異方性導電フィルムの製造方法、電子部品の接続方法、異方性導電接続体

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