WO2021022642A1 - 邦定结构及其制备方法、显示面板 - Google Patents

邦定结构及其制备方法、显示面板 Download PDF

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Publication number
WO2021022642A1
WO2021022642A1 PCT/CN2019/107515 CN2019107515W WO2021022642A1 WO 2021022642 A1 WO2021022642 A1 WO 2021022642A1 CN 2019107515 W CN2019107515 W CN 2019107515W WO 2021022642 A1 WO2021022642 A1 WO 2021022642A1
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WIPO (PCT)
Prior art keywords
substrate
groove
electrode
electrodes
grooves
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PCT/CN2019/107515
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English (en)
French (fr)
Inventor
刘宇
Original Assignee
武汉华星光电半导体显示技术有限公司
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Publication of WO2021022642A1 publication Critical patent/WO2021022642A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
    • H01L2224/171—Disposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/81201—Compression bonding
    • H01L2224/81203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding

Definitions

  • the invention relates to the field of display technology, in particular to a bonding structure, a preparation method thereof, and a display panel.
  • the display panel usually includes an operation area and a bonding area.
  • the integrated circuit chip of the display panel Integrated Circuit, IC
  • ACF Anaisotropic Conductive Film, anisotropic conductive adhesive
  • COP Chip On PI, Polyimide Flip Chip Package
  • COF Chip On Film, Chip On Film
  • COG Chip On Glass, Chip On Glass
  • ACF is composed of conductive particles and resin gel. Conductive particles are usually conductive metal, which acts as an electrical conduction path, while resin gel plays a role in bonding strengthening.
  • the ideal bonding result is that the conductive particles are fully utilized and only filled between the corresponding panel electrodes and the IC/COF/FPC (Flexible Printed Circuit) electrodes, so that the upper and lower electrodes are efficiently conducted.
  • the ACF is heated to apply pressure to turn the solid resin gel into a rubber state.
  • the flow of the rubber state resin gel drives the flow of conductive particles and dislocations.
  • the misaligned panel electrodes and IC/COF/FPC (Flexible Printed Circuit, flexible circuit board) electrodes are electrically erroneously conducted and short-circuited.
  • the electrode will be erroneously electrically conducted and short-circuited.
  • the present invention provides a bonding structure, including:
  • the first substrate is provided with a plurality of first grooves and a plurality of first electrodes, and the first electrodes are arranged one by one in the first grooves and have a thickness less than or equal to the depth of the first grooves;
  • the second substrate is provided with a plurality of second grooves and a plurality of second electrodes, the second electrodes are arranged in the second grooves one by one and have a thickness less than or equal to the depth of the second groove;
  • An anisotropic conductive adhesive includes a resin gel and conductive particles distributed in the resin gel, the resin gel is provided between the first substrate and the second substrate, and the conductive particles provide a first electrode And the electrical conduction path between the second electrode.
  • the present invention additionally provides a display panel, including a display unit, a driving unit, and a bonding structure, the bonding structure includes:
  • the first substrate is provided with a plurality of first grooves and a plurality of first electrodes, the display unit is connected to the first electrodes, and the first electrodes are arranged one by one in the first grooves and have a thickness Less than or equal to the depth of the first groove;
  • the second substrate is provided with a plurality of second grooves and a plurality of second electrodes, the driving unit is connected with the second electrode, and the second electrodes are arranged one by one in the second groove and have a thickness Less than or equal to the depth of the second groove;
  • An anisotropic conductive adhesive includes a resin gel and conductive particles distributed in the resin gel, the resin gel is provided between the first substrate and the second substrate, and the conductive particles provide a first electrode And the electrical conduction path between the second electrode.
  • the present invention also provides a method for preparing a bonding structure, including:
  • first electrodes are arranged in the first grooves one by one and have a thickness less than or equal to the depth of the first groove;
  • the second electrodes are arranged in the second grooves one by one and have a thickness less than or equal to the depth of the second groove;
  • the anisotropic conductive adhesive including a resin gel and conductive particles distributed in the resin gel;
  • the resin gel is thermally pressed and cured, so that the conductive particles provide an electrical conduction path between the aligned first electrode and the second electrode.
  • a plurality of first grooves are provided in the first substrate, and each first groove is filled with a first electrode, and a plurality of second grooves are provided in the second substrate, and each second groove
  • the upper surface of the first electrode is lower than or parallel to the first substrate, and the upper surface of the second electrode is lower than or parallel to the second substrate, so that the first substrate and the second substrate pass through the ACF
  • the resin gel can flow and drive the conductive particles to flow on both sides, the first electrode and the second electrode that are dislocated cannot be continuously filled with conductive particles, and the second electrode is completely opposite.
  • Conductive particles are filled between one electrode and the second electrode, so that the conductive particles in the ACF just provide an electrical conduction path between the opposing first electrode and the second electrode, avoiding the dislocation of the first electrode when the electrode protrudes from the substrate.
  • the first electrode and the second electrode are conducted by conductive particles and a short circuit occurs.
  • Figure 1 is a schematic diagram of an ideal bonding structure in the prior art
  • Fig. 2 is a schematic structural diagram of a bonding structure with dislocation of conductive particles in the prior art
  • FIG. 3 is a schematic structural diagram of an embodiment of the bonding structure of the present invention.
  • FIG. 4 is a schematic structural diagram of an embodiment of the display panel of the present invention.
  • Figure 5 is a schematic flow chart of an embodiment of the method for preparing a bonding structure of the present invention.
  • FIG. 1 is a schematic structural diagram of a bonding structure in an ideal state in the prior art, including a panel substrate 10 and a panel electrode 11 provided on the panel substrate 10, and the panel electrode 11 protrudes from the surface of the panel substrate 10; It also includes an IC 20 (or COF or FPC) and a driving electrode 21 arranged on the IC 20. At the same time, the driving electrode 21 also protrudes from the surface of the IC 20.
  • the IC 20 is bonded to the bonding area of the panel substrate 10 through ACF, which is in the ACF.
  • the conductive particles 30 (usually metal particles) function as electrical conduction paths, so that the aligned panel electrode 11 and the driving electrode 21 are connected to each other.
  • FIG. 2 is a schematic structural diagram of a bonding structure with dislocation of conductive particles in the prior art. Because the ACF is used for bonding, the ACF is heated.
  • the ACF includes conductive particles 30 and resin gel. Heating and pressure make the solid resin gel into a rubber state. The flow of rubber resin will drive the flow of conductive particles 30 to make the original The conductive particles 30 between the two electrodes are squeezed into the electrode gap. When the temperature is restored, the resin gel returns from a rubber state to a solid state. The position of the conductive particles no longer changes, so that the displaced panel electrode 11 and the driving electrode 21 are connected. , Causing a short circuit.
  • the present invention provides an improved bonding structure to solve the technical problem that the electrodes of the panel substrate and the misplaced IC/COF/FPC electrodes in the prior art are easily conducted by the ACF conductive particles to cause short circuits.
  • FIG. 3 is a schematic structural diagram of an embodiment of the bonding structure 100 of the present invention, which includes a first substrate 40 and a second substrate 50. among them:
  • a plurality of first grooves 41 and a plurality of first electrodes 42 are provided in the first substrate 40, and the first electrodes 42 are provided in the first grooves 41 one by one, that is, each first groove 41 is correspondingly provided There is a first electrode 42.
  • the second substrate 50 is provided with a plurality of second grooves 51 and a plurality of second electrodes 52, and the second electrodes 52 are provided one by one in the second grooves 51, that is, each second groove 51 is correspondingly provided There is a second electrode 52.
  • the thickness of the first electrode 42 is equal to the depth of the first groove 41, that is, the upper surface of the first electrode 42 and the upper surface of the first groove 41 are level.
  • the thickness of the second electrode 52 is equal to the depth of the second groove 51, and the upper surface of the second electrode 52 is level with the upper surface of the second groove 51.
  • the two opposite electrodes 42b are the second electrode 52a and the second electrode 52b, respectively.
  • the resin gel When the anisotropic conductive glue is filled between the first substrate 40 and the second substrate 50, after the anisotropic conductive glue is heated and pressed, the resin gel is in a flowable state, driving the conductive particles 30 to move to both sides Since the upper surfaces of the first electrode 42a and the first electrode 42b are level with the first substrate 40, and the upper surfaces of the second electrode 52a and the second electrode 52b are level with the second substrate 50, the resin gel and conductive particles 30 will not It is blocked by the electrodes and can move smoothly to both sides, so that the dislocation between the first electrode 42a and the second electrode 52b and between the first electrode 42b and the second electrode 52a cannot be filled with conductive particles 30 continuously, but opposite
  • the conductive particles 30 are filled between the first electrode 42a and the second electrode 52a and between the first electrode 42b and the second electrode 52b, so that the conductive particles 30 provide the first electrode 42 and the second electrode on the first substrate 40 opposite to each other.
  • the first substrate 40 and the second substrate 50 are in an opposing state, and the first substrate 40 and the second substrate 50 have a certain distance (with anisotropic conductive glue provided between them), the first substrate 40
  • the first electrode 42 will only be connected to the second electrode 52 aligned with it in the second substrate 50, and will not be connected to the second electrode 52 that is not aligned with it in the second substrate 50, thereby avoiding misaligned electrodes The case of conduction.
  • the conductive particles 30 in the ACF are electrically contacted with both the first electrode 42 and the second electrode 52.
  • a voltage is applied between the first substrate 40 and the second substrate 50.
  • the conductive particles 30 in the ACF are only arranged between the first groove 41 and the second groove 51 that are aligned.
  • the mutual conduction between the first electrode 42 in the first groove 41 and the second electrode 52 in the second groove 51 that are aligned to each other does not cause the conduction phenomenon of the dislocation electrode.
  • the thickness of the first electrode 42 may be smaller than the depth of the first groove 41, and the thickness of the second electrode 52 may also be smaller than the depth of the second groove 51.
  • the conductive particles 30 in the ACF can be partially contained in the first groove 41 and the second groove 51, and realize the conduction of the first electrode 42 and the second electrode 52. through.
  • the first electrode 42 in the first substrate 40 will only be connected to the second electrode 42 in the second substrate 50 that is aligned with it, and will not be connected to the second electrode 42 in the second substrate 50 that is not aligned therewith.
  • the second electrode 42 is turned on, so as to prevent the dislocation electrode from being turned on.
  • the first groove 41 of the first substrate 40 and the second groove 51 of the second substrate 50 are the same, that is, the first groove 41 of the first substrate 40 and the second groove 41 of the second substrate 50 are the same.
  • the width and depth of the grooves 51 are the same.
  • the sizes of the aligned first groove 41 and the second groove 51 may be different, but the difference between the opening sizes of the aligned first groove 41 and the second groove 51 is smaller than that of the conductive particles 30
  • the largest radial dimension, that is, a certain number of conductive particles 30 are provided between the aligned first groove 41 and the second groove 51, and the conductive particles 30 will not come out of two separate electrodes on the same substrate. In between, it is avoided that the electrodes interlaced between the upper and lower substrates are conducted by the conductive particles 30 and short-circuited.
  • the groove wall of the first groove 41 abuts against the side of the first electrode 42 contained therein, and the second groove The groove wall of the groove 51 abuts against the side of the second electrode 52 contained therein. That is, the first groove 41 and the second groove 51 are both filled with their respective electrodes, and are filled in both height and width, leaving no gap in the groove.
  • This design method prevents the conductive particles 30 of the ACF from falling into the groove, and makes the arrangement of the conductive particles 30 difficult to control.
  • first grooves 41 are provided in the first substrate 40, and each first groove 41 is filled with a first electrode 42, and a plurality of second grooves are provided in the second substrate 50. 51, and each second groove 51 is filled with a second electrode 52, the upper surface of the first electrode 42 is lower than or parallel to the first substrate 40, and the upper surface of the second electrode 52 is lower than or parallel to the second The substrate 50, so that when the first substrate 40 and the second substrate 50 pass through the ACF bond, after the ACF is heated and pressure is applied, since the resin gel can flow and drive the conductive particles 30 to flow to both sides, the first electrode 42 is out of phase.
  • the conductive particles 30 cannot be continuously filled with the second electrode 52, and the conductive particles 30 are filled between the completely opposite first electrode 42 and the second electrode 52, so that the conductive particles 30 in the ACF just provide the opposite first electrode.
  • the electrical conduction path between the electrode 42 and the second electrode 52 avoids that when the electrode protrudes from the substrate, the misaligned first electrode 42 and the second electrode 52 are conducted by the conductive particles 30 to cause a short circuit.
  • the bonding structure in this embodiment can be applied to display panels, which can be liquid crystal display panels, field emission display panels, plasma display panels, organic light-emitting diode (OLED) display devices. , Or any suitable display device panel.
  • This display panel includes a display area (that is, an operation area) and a bonding area.
  • the bonding area is provided with a first electrode 41 and a second electrode 52 that are connected to each other through the conductive particles 30 of the ACF.
  • the following describes an application scenario applicable to a display panel as an example.
  • FIG. 4 is a schematic structural diagram of an embodiment of the display panel 200 of the present invention, including a display unit 60, a driving unit 70, and the aforementioned bonding structure 100.
  • the display unit 60 is electrically connected to the first electrode 42
  • the driving unit 70 is electrically connected to the second electrode 52.
  • the first substrate 40 includes a panel substrate 43
  • the first electrode 42 is located in the bonding area of the panel substrate 43
  • the second substrate 50 may be an integrated circuit chip substrate (such as IC) or a flexible printed circuit substrate (such as COF or FPC).
  • the panel substrate 43 can be made of glass, polyterephthalic acid film (PET film), cycloolefin polymer film (COP film), or polyimide film (PI film).
  • the first substrate 40 includes a panel substrate 43 and a display unit provided on the panel substrate 43.
  • the panel substrate 33 is provided with a bonding area
  • the first electrode 42 is provided in the bonding area
  • the first electrode 42 is electrically connected to the display unit. connection.
  • the first electrode 42 may include a first metal layer, a second metal layer, and a third metal layer.
  • the metal materials of the first metal layer and the third metal layer are made of materials with better corrosion resistance
  • the second metal layer is made of materials with better conductivity.
  • the metal material of the first metal layer and the third metal layer can be molybdenum, nickel, palladium, cobalt, tungsten, rhodium, titanium, chromium, gold, silver, platinum, etc.
  • the metal material of the second metal layer can be gold, silver. , Copper, aluminum, iron, etc.
  • the second metal layer, the first metal layer, and the third metal layer need to have good bonding and good conductivity of the metal lead.
  • a three-layer metal structure of molybdenum, aluminum, and molybdenum, or nickel, copper, and nickel Three-layer metal structure, three-layer metal structure of molybdenum, copper, and molybdenum, or three-layer metal structure of nickel, aluminum, and nickel.
  • the second substrate 50 may be an electrode of IC or COF or FPC.
  • COF is the flexible circuit board after the IC is fixed on the FPC, and it can also be bent freely.
  • the bonding process of COF reduces the lower frame of the display, which is suitable for the process used in large-screen displays.
  • a groove is provided on the IC or COF or FPC, and then the electrode is filled in the groove, and finally bonded with the first electrode 42 of the first substrate 40.
  • the bonding structure 100 is provided between the display unit 60 and the driving unit 70 of the display panel 200, and the first electrode 42 of the first substrate 40 of the bonding structure 100 is disposed in the first recess of the first substrate 40.
  • the second electrode 52 of the second substrate 50 is disposed in the second groove 51 of the second substrate 50, so that the first electrode 42 and the second electrode 52 of the bonding structure 100 pass through the ACF bond timing, ACF
  • the conductive particles in it just provide an electrical conduction path between the first electrode 42 and the second electrode 52, and the dislocation of the two substrates will not be conducted by the conductive particles to cause a short circuit.
  • FIG. 5 is a schematic flowchart of an embodiment of the method for preparing a bonding structure of the present invention, including steps S31 to S35.
  • a first substrate having a plurality of first grooves and a plurality of first electrodes, the first electrodes are arranged one by one in the first grooves and have a thickness less than or equal to that of the first grooves. depth.
  • the first substrate may include a panel substrate, and the first electrode is located in a bonding area of the panel substrate.
  • the material of the panel substrate can be made of glass, polyethylene terephthalate film (PET film), cycloolefin polymer film (COP film), or polyimide film (PI film).
  • a display unit is also provided on the panel substrate, the bonding area is located on one side of the display unit, and the display unit is electrically connected with the first electrode.
  • a first electrode is correspondingly arranged in each groove.
  • the thickness of the first electrode may be less than or equal to the depth of the first groove.
  • S32 Provide a second substrate having a plurality of second grooves and a plurality of second electrodes, and the second electrodes are arranged one by one in the second grooves and have a thickness less than or equal to that of the second grooves. depth.
  • the second substrate is an integrated circuit chip (IC) substrate or a flexible printed circuit substrate (including an FPC and a COF substrate after the IC is bonded to the FPC).
  • IC integrated circuit chip
  • flexible printed circuit substrate including an FPC and a COF substrate after the IC is bonded to the FPC.
  • a second electrode is correspondingly provided in each second groove.
  • the thickness of the second electrode may be less than or equal to the second The depth of the groove.
  • the anisotropic conductive adhesive includes a resin gel and conductive particles distributed in the resin gel.
  • this step will bond the first substrate and the second substrate.
  • an anisotropic conductive glue is coated on the first substrate and covers the first groove.
  • the first substrate includes a panel substrate, the first electrode is located in a bonding area of the panel substrate, and the second substrate is an integrated circuit chip substrate or a flexible printed circuit substrate. And coating the anisotropic conductive glue on the bonding area of the first substrate.
  • Anisotropic conductive glue includes resin gel and conductive particles distributed in resin gel.
  • Resin gels include thermoplastic resins and thermosetting resins.
  • Thermoplastic resin mainly has the properties of softening by heat and hardening by cooling, and can be repeated many times without being affected, but at the same time it has the shortcomings of high thermal expansion and high moisture absorption, which makes it easy to deteriorate at high temperatures and cannot meet the requirements of reliability and reliability. .
  • Thermosetting resins such as epoxy resin (Epoxy), polyimide (Polyimide), etc., have the advantages of high temperature stability and low thermal expansion and hygroscopicity, but their disadvantages are high processing temperature and difficult rework, but in general Its high reliability is still the most widely used material.
  • the conductive particles are usually conductive metal powder, and can also be two types of polymer plastic balls coated with metal powder. Commonly used metals include powdered nickel (Ni), gold (Au), gold-plated nickel, silver, and tin alloys
  • this step place the second substrate on the anisotropic conductive glue, and make one first electrode and one second electrode one by one.
  • the images are aligned correspondingly, so that the corresponding ACF conductive particles provide electrical conduction paths between each of the aligned first and second electrodes.
  • the resin gel is in a solid state.
  • the ACF will be heated and pressed to turn the solid resin gel into a rubber state.
  • the conductive particles in the resin gel are only arranged between the first electrode and the second electrode that are aligned, and the first electrode of the first substrate and the second substrate are adjacent There are no conductive particles between the second electrodes, so that the conductive particles provide an electrical conduction path between the aligned first electrode and the second electrode, and at the same time, avoid the occurrence of short-circuiting of the dislocated electrode by the conductive particles.
  • the method for preparing the bonding structure described above is to provide a plurality of first grooves in the first substrate, and each first groove is filled with a first electrode, and a plurality of second grooves are provided in the second substrate, and Each second groove is filled with a second electrode, the upper surface of the first electrode is lower than or parallel to the first substrate, and the upper surface of the second electrode is lower than or parallel to the second electrode, so that the first substrate and When the second substrate passes through the ACF, the conductive particles in the ACF just provide an electrical conduction path between the first electrode and the second electrode under the action of voltage, which prevents the first electrode from being dislocated when the electrode protrudes from the substrate. The conductive particles are connected to the second electrode to cause a short circuit.

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Abstract

一种邦定结构（100）及其制备方法、显示面板，邦定结构（100）包括：第一基板（40），设有多个第一凹槽（41）和多个第一电极（42），第一电极（42）一一设于第一凹槽（41）内且其厚度小于或等于第一凹槽（41）的深度；第二基板（50），设有多个第二凹槽（51）和多个第二电极（52），第二电极（52）一一设于第二凹槽（51）内且其厚度小于或等于第二凹槽（51）的深度；各向异性导电胶，包括树脂凝胶和分布于树脂凝胶中的导电粒子（30），树脂凝胶提供在第一基板（40）和第二基板（50）之间，导电粒子（30）提供第一电极（42）和第二电极（52）之间的电导通路径。邦定结构及其制备方法、显示面板，能够避免第一基板和第二基板上的电极通过ACF电性导通时，相对的错位的电极发生短路的情况发生。

Description

邦定结构及其制备方法、显示面板 技术领域
本发明涉及显示技术领域，具体而言涉及一种邦定结构及其制备方法、显示面板。
 背景技术
随着科技的发展，显示面板已渗透到了我们的工作和生活的各个领域，其制成的显示终端对我们的工作和生活产生巨大的影响，我们的工作和生活已离不开显示终端，如我们每天相互联系使用的手机，办公使用的电脑、娱乐使用的电视等。
显示面板通常包括操作区与邦定区，在所述邦定区，显示面板的集成电路芯片（Integrated Circuit, IC）通过ACF（Anisotropic Conductive Film，各向异性导电胶）与基于COP（Chip On PI, 聚酰亚胺覆晶封装）、COF（Chip On Film, 覆晶薄膜）或者COG（Chip On Glass, 玻璃覆晶封装）工艺的面板电极邦定。ACF由导电粒子和树脂凝胶构成，导电粒子通常为导电金属，起电导通路径的作用，树脂凝胶则起到粘接强化作用。理想的邦定结果是导电粒子被充分利用，只填充在对应的面板电极和IC/COF/FPC（Flexible Printed Circuit，柔性电路板）的电极之间，使上下电极高效导通。
然而，由于压接过程中为了达成树脂凝胶的粘结能力，会对ACF进行加热，施压使固态树脂凝胶变成橡胶态，橡胶态树脂凝胶的流动带动导电粒子的流动错位，从而导致错位的面板电极和IC/COF/FPC（Flexible Printed Circuit，柔性电路板）的电极错误电性导通而发生短路。
 技术问题
现有技术中因ACF的导电粒子错位会导致电极错误电性导通而短路。
 技术解决方案
本发明提供一种邦定结构，包括：
第一基板，设有多个第一凹槽和多个第一电极，所述第一电极一一设于所述第一凹槽内且其厚度小于或等于所述第一凹槽的深度；
第二基板，设有多个第二凹槽和多个第二电极，所述第二电极一一设于所述第二凹槽内且其厚度小于或等于所述第二凹槽的深度；
各向异性导电胶，包括树脂凝胶和分布于所述树脂凝胶中的导电粒子，所述树脂凝胶提供在所述第一基板和第二基板之间，所述导电粒子提供第一电极和第二电极之间的电导通路径。
本发明另外提供一种显示面板，包括显示单元、驱动单元以及邦定结构，所述邦定结构包括：
第一基板，设有多个第一凹槽和多个第一电极，所述显示单元与所述第一电极连接，所述第一电极一一设于所述第一凹槽内且其厚度小于或等于所述第一凹槽的深度；
第二基板，设有多个第二凹槽和多个第二电极，所述驱动单元与所述第二电极连接，所述第二电极一一设于所述第二凹槽内且其厚度小于或等于所述第二凹槽的深度；
各向异性导电胶，包括树脂凝胶和分布于所述树脂凝胶中的导电粒子，所述树脂凝胶提供在所述第一基板和第二基板之间，所述导电粒子提供第一电极和第二电极之间的电导通路径。
本发明还提供一种邦定结构的制备方法，包括：
提供具有多个第一凹槽和多个第一电极的第一基板，所述第一电极一一设于所述第一凹槽内且其厚度小于或等于所述第一凹槽的深度；
提供具有多个第二凹槽和多个第二电极的第二基板，所述第二电极一一设于所述第二凹槽内且其厚度小于或等于所述第二凹槽的深度；
将各向异性导电胶涂覆于所述第一基板上，且覆盖所述第一凹槽，所述各向异性导电胶包括树脂凝胶和分布于树脂凝胶中的导电粒子；
将所述第二基板放置于所述各向异性导电胶涂上，并使所述第一电极和所述第二电极一一对准；
热压并固化所述树脂凝胶，以使所述导电粒子在相对准的第一电极和第二电极之间提供电导通路径。
 有益效果
本发明通过在第一基板内设置多个第一凹槽，并且每一第一凹槽内填充有第一电极，在第二基板内设置多个第二凹槽，并且每个第二凹槽内填充有第二电极，第一电极的上表面低于或平行于第一基板，第二电极的上表面是低于或平行于第二基板，从而使第一基板和第二基板在通过ACF邦定时，ACF受热并施加压力之后，由于树脂凝胶可流动并带动导电粒子向两侧流动，相错位的第一电极和第二电极之间不能连续的填充有导电粒子，而完全相对的第一电极和第二电极之间填充有导电粒子，从而ACF中的导电粒子刚好提供相对的第一电极和第二电极之间的电导通路径，避免了当电极凸出于基板时，错位的第一电极和第二电极被导电粒子导通而发生短路的情况发生。
 附图说明
图1是现有技术中的理想的邦定结构的结构示意图；
图2是现有技术中的导电粒子错位的邦定结构的结构示意图；
图3是本发明的邦定结构的一实施例的结构示意图；
图4是本发明的显示面板的一实施例的结构示意图；
图5是本发明的邦定结构的制备方法一实施例的流程示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、 [下]、 [前]、 [后]、 [左]、 [右]、 [内]、 [外]、 [侧面] 等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅用以解释本发明，并不用于限定本发明。在不冲突的情况下，下述各个实施例及其技术特征可以相互组合。
请参阅图1，为现有技术中的理想状态下的邦定结构的结构示意图，包括面板基板10及设于面板基板10上的面板电极11，面板电极11凸出于面板基板10的表面；还包括IC 20（或COF或FPC）以及设于IC20上的驱动电极21，同时驱动电极21也凸出于IC 20的表面，IC 20通过ACF邦定在面板基板10的邦定区，ACF中的导电粒子30（通常为金属粒子）起电导通路径作用，以使相对准的面板电极11和驱动电极21相互导通。
请参阅图2，为现有技术中的导电粒子错位的邦定结构的结构示意图。因使用ACF进行邦定时，会对ACF进行加热，ACF包括导电粒子30和树脂凝胶，加热施压使固态树脂凝胶变成橡胶态，橡胶态树脂流动会带动导电粒子30的流动，使原本在两者电极之间的导电粒子30被挤入到电极空隙中，恢复常温时树脂凝胶由橡胶态恢复至固态，导电粒子位置不再变动，使错位的面板电极11和驱动电极21导通，造成短路。
因此，本发明提供一种改善后的邦定结构，以解决现有技术中的面板基板的电极和错位的IC/COF/FPC电极易被ACF导电粒子导通发生短路的技术问题。
请参阅图3，为本发明的邦定结构100的一实施例的结构示意图，包括第一基板40和第二基板50。其中：
第一基板40内设有多个第一凹槽41和多个第一电极42，第一电极42一一设于所述第一凹槽41内，即每一个第一凹槽41内对应设有一个第一电极42。
第二基板50内设有多个第二凹槽51和多个第二电极52，第二电极52一一设于所述第二凹槽51内，即每一个第二凹槽51内对应设有一个第二电极52。
在本实施例中，第一电极42的厚度等于第一凹槽41的深度，即第一电极42的上表面与第一凹槽41的上表面相持平。同样的，第二电极52的厚度等于第二凹槽51的深度，第二电极52的上表面与第二凹槽51的上表面相持平。第一基板40和第二基板50之间的各向异性导电胶中的导电粒子30可以实现第一电极42和第二电极52的导通。
例如，请参阅图3，第一基板40上的两个相邻的第一电极42a与第一电极42b，第二基板50上与第一基板40上的两个第一电极42a与第一电极42b相对的两个电极分别为第二电极52a与第二电极52b。当在第一基板40和第二基板50之间填充各向异性导电胶时，对各向异性导电胶进行加热并施压之后，树脂凝胶处于可流动状态，带动导电粒子30向两侧运动，由于第一电极42a与第一电极42b的上表面与第一基板40持平，及第二电极52a与第二电极52b的上表面与第二基板50持平，树脂凝胶与导电粒子30不会受到电极的阻拦而能顺利的向两侧运动，使错位的第一电极42a和第二电极52b之间及第一电极42b与第二电极52a之间不能连贯的填充有导电粒子30，而相对的第一电极42a和第二电极52a之间及第一电极42b与第二电极52b之间充填有导电粒子30，从而实现导电粒子30提供相对的第一基板40上的第一电极42和第二基板50上的第二电极52之间的电导通路径，不会出现错位的相对电极之间的导通情况发生。
也就是说，当第一基板40和第二基板50处于相对的状态，且第一基板40和第二基板50具有一定距离（之间设置有各向异性导电胶）时，第一基板40中的第一电极42仅会与第二基板50中与之对准的第二电极52接通，而不会与第二基板50中与之不对准的第二电极52接通，从而避免错位电极导通的情况。
在前述基础上，对第一基板40和第二基板50之间的ACF粒子加热并施加压力之后，使ACF中的导电粒子30与第一电极42和第二电极52均电接触，可以通过对第一基板40和第二基板50之间施加电压，在电压的牵引力作用下，使ACF中的导电粒子30仅设置在相对准的第一凹槽41和第二凹槽51之间，从而实现相对准的第一凹槽41内的第一电极42和第二凹槽51内的第二电极52之间的相互导通，不会产生错位电极的导通现象。
在其他实施例中，第一电极42的厚度可以小于第一凹槽41的深度，第二电极52的厚度也可以小于第二凹槽51的深度。当第一基板40和第二基板50进行邦定时，ACF中的导电粒子30可部分收容于第一凹槽41和第二凹槽51中，并实现第一电极42和第二电极52的导通。同样值得注意的是，第一基板40中的第一电极42仅会与第二基板50中与之对准的第二电极42接通，而不会与第二基板50中与之不对准的第二电极42接通，从而避免错位电极导通的情况。
进一步地，具体设置时，第一基板40的第一凹槽41和第二基板50的第二凹槽51相同，也即第一基板40的第一凹槽41和第二基板50的第二凹槽51的宽度和深度均相同，通过相同的凹槽的设置，使ACF的导电粒子30仅设置对准于第一凹槽41和第二凹槽42之间，不仅方便于形成两者的凹槽，使用一套模具即可，同时，也方便于填充ACF的填充导电粒子30时的操作。
在其他实施例中，相对准的第一凹槽41和第二凹槽51的大小可以不一致，但是相对准的第一凹槽41和第二凹槽51的开口尺寸之差小于导电粒子30的最大径向尺寸，也即在相对准的第一凹槽41和第二凹槽51之间设有确定的导电粒子30的数量，导电粒子30不会多出于同一基板上相隔的两个电极之间，避免出现上下两个基板相交错的电极被导电粒子30导通而发生短路。
更进一步地，在第一凹槽41里面和第二凹槽51里面填充各自的电极时，第一凹槽41的槽壁与其所容置的第一电极42的侧边相抵接，第二凹槽51的槽壁与其所容置的第二电极52的侧边相抵接。也即第一凹槽41和第二凹槽51内均被各自的电极填充满，在高度和宽度上均被填充满，在槽里面未留空隙。该设计方式，避免了ACF的导电粒子30掉落到槽当中，使导电粒子30的排布不易控制。
上述邦定结构，通过在第一基板40内设置多个第一凹槽41，并且每一第一凹槽41内填充有第一电极42，在第二基板50内设置多个第二凹槽51，并且每个第二凹槽51内填充有第二电极52，第一电极42的上表面低于或平行于第一基板40，第二电极52的上表面是低于或平行于第二基板50，从而使第一基板40和第二基板50在通过ACF邦定时，ACF受热并施加压力之后，由于树脂凝胶可流动并带动导电粒子30向两侧流动，相错位的第一电极42和第二电极52之间不能连续的填充有导电粒子30，而完全相对的第一电极42和第二电极52之间填充有导电粒子30，从而ACF中的导电粒子30刚好提供相对的第一电极42和第二电极52之间的电导通路径，避免了当电极凸出于基板时，错位的第一电极42和第二电极52被导电粒子30导通而发生短路的情况发生。
需要指出的是，本实施例中的邦定结构可以应用在显示面板当中，显示面板可以为液晶显示器面板、场发射显示器面板、等离子体显示器面板、有机发光二极管(OLED)显示装置的有机发光面板，或者任何合适的显示装置面板。这个显示面板包括显示区（也即操作区）和邦定区，邦定区设有第一电极41与第二电极52通过ACF的导电粒子30相导通。
下面以适用于显示面板的应用场景为例进行描述。
请参阅图4，为本发明的显示面板200的一实施例的结构示意图，包括显示单元60、驱动单元70以及上述的邦定结构100，显示单元60与第一电极42电性连接，驱动单元70与第二电极52电性连接。
具体地，第一基板40包括面板基板43，所述第一电极42位于所述面板基板43的邦定区，第二基板50可以为集成电路芯片基板（如IC）或柔性印刷电路基板（如COF或FPC）。其中面板基板43可为玻璃或聚对苯二甲酸类膜(PET膜)或环烯烃聚合物膜(COP膜)或聚酰亚胺膜(PI膜) 等材料制成。
实际生产时，触摸屏或显示屏的边框处设置邦定区。第一基板40包括面板基板43和设于面板基板43上的显示单元，面板基板33上设有邦定区，第一电极42设于邦定区内，且第一电极42与显示单元电性连接。具体地，第一电极42可以包括第一金属层、第二金属层与第三金属层。所述第一金属层与第三金属层的金属材料采用具有较好的耐腐蚀性能的材料，而所述第二金属层导电性能较好的材料。如第一金属层与第三金属层的金属材料可采用钼、镍、钯、钴、钨、 铑、钛、铬、金、银、铂等，第二金属层的金属材料可采用金、银、铜、铝、铁等。第二金属层与第一金属层、第三金属层之间需要具有良好结合性与金属引线的良好的导电性，可采用钼、铝、钼的三层金属结构，或者镍、铜、镍的三层金属结构，钼、铜、钼的三层金 属结构，或者镍、铝、镍的三层金属结构。通过设置三层的金属导电结构，避免了第一电极32易受腐蚀问题，并且也保证具有良好的导电性能。
第二基板50可为IC或COF或FPC的电极。COF即为将IC固定于FPC上之后的柔性电路板，也可自由弯曲，COF的邦定工艺使显示屏的下边框减少，适合大屏幕的显示屏中使用的工艺。COF将IC直接封装到FPC上后，由于FPC可以自由弯曲，因此可以将其折到玻璃背面，从而实现缩小下边框的目的。IC或COF或FPC在制作电极的时，需在IC或COF或FPC上设置凹槽，再将电极填充于凹槽内，最后再与第一基板40的第一电极42进行邦定。
上述显示面板200，通过在显示面板200的显示单元60和驱动单元70之间设置邦定结构100，邦定结构100的第一基板40的第一电极42设置于第一基板40的第一凹槽41内，第二基板50的第二电极52设置于第二基板50的第二凹槽51内，从而邦定结构100的第一电极42和第二电极52之间通过ACF邦定时，ACF中的导电粒子在电压牵引力作用下，刚好提供第一电极42和第二电极52之间的电导通路径，不会出现两个基板的错位的电极被导电粒子导通而出现短路的情况发生。
请参阅图5，为本发明的邦定结构的制备方法的一实施例的流程示意图，包括步骤S31至S35。
S31，提供具有多个第一凹槽和多个第一电极的第一基板，所述第一电极一一设于所述第一凹槽内且其厚度小于或等于所述第一凹槽的深度。
其中，第一基板可以包括面板基板，第一电极位于面板基板的邦定区。面板基板的材质可以为由玻璃或聚对苯二甲酸类膜(PET膜)或环烯烃聚合物膜(COP膜)或聚酰亚胺膜(PI膜) 等材料制成。在面板基板上还设有显示单元，邦定区位于显示单元的一侧，且显示单元与第一电极电性连接。
在第一基板上设置第一凹槽后，在每一凹槽内对应设置有一第一电极。具体设置时，第一电极的厚度可以小于或等于第一凹槽的深度。
S32，提供具有多个第二凹槽和多个第二电极的第二基板，所述第二电极一一设于所述第二凹槽内且其厚度小于或等于所述第二凹槽的深度。
其中，第二基板为集成电路芯片（IC）基板或柔性印刷电路基板（包括FPC以及将IC邦定于FPC之后的COF基板）。在集成电路芯片基板或柔性印刷电路基板上设置多个第二凹槽后，在每一第二凹槽内对应设有一第二电极，具体设置时，第二电极的厚度可以小于或等于第二凹槽的深度。
S33，将各向异性导电胶涂覆于所述第一基板上，且覆盖所述第一凹槽，所述各向异性导电胶包括树脂凝胶和分布于树脂凝胶中的导电粒子。
在上述两个步骤完成之后，本步骤将对第一基板和第二基板进行邦定。具体邦定时，将各向异性导电胶涂覆于所述第一基板上，且覆盖所述第一凹槽。
进一步地，第一基板包括面板基板，第一电极位于所述面板基板的邦定区，第二基板为集成电路芯片基板或柔性印刷电路基板。并将各向异性导电胶涂覆于所述第一基板的邦定区。
各向异性导电胶包括树脂凝胶和分布于树脂凝胶中的导电粒子。树脂凝胶包括热塑性树脂与热固性树脂两大类。热塑性树脂主要具有受热软化、冷却硬化的性能，并可重复多次不受影响，但同时具有高热膨胀性和高吸湿性缺点，使其处于高温下易劣化，无法符合可靠性、信赖性的需求。而热固性树脂如环氧树脂(Epoxy)、聚酰亚胺（Polyimide）等，则具有高温安定性且热膨胀性和吸湿性低等优点，但加工温度高且不易重工为其缺点，但综合来说其可靠性高的优点仍为目前采用最广泛之材料。导电粒子通常为导电金属粉末，也可以为高分子塑料球表面涂布金属粉末这两种。常见使用的金属包括粉镍(Ni)、金(Au)、镍上镀金、银及锡合金等金属。
S34，将所述第二基板放置于所述各向异性导电胶涂上，并使所述第一电极和所述第二电极一一对准。
完成上述步骤在第一基板上涂覆各向异性导电胶之后，在本步骤中，将第二基板放置于所述各向异性导电胶涂上，并使一个第一电极和一个二电极一一像对应对准，以使相对准的每一第一电极和第二电极之间通过相对应的ACF导电粒子提供电导通路径。
S35，热压并固化所述树脂凝胶，以使所述导电粒子在相对准的第一电极和第二电极之间提供电导通路径。
树脂凝胶处于固态，为了达成树脂凝胶的粘结能力，会对ACF进行加热和施压，使固态树脂凝胶变成橡胶态。同时施加电压，在电压的牵引力作用下，使所述树脂凝胶中的导电粒子仅设置于相对准的第一电极和第二电极之间，第一基板的第一电极和第二基板相邻的第二电极之间不存在导电粒子，以使所述导电粒子在相对准的第一电极和第二电极之间提供电导通路径，同时避免错位的电极被导电粒子电导通发生短路的情况发生。
上述邦定结构的制备方法，通过在第一基板内设置多个第一凹槽，并且每一第一凹槽内填充有第一电极，在第二基板内设置多个第二凹槽，并且每个第二凹槽内填充有第二电极，第一电极的上表面低于或平行于第一基板，第二电极的上表面是低于或平行于第二电极，从而使第一基板和第二基板在通过ACF邦定时，ACF中的导电粒子在电压的作用下刚好提供第一电极和第二电极之间的电导通路径，避免了当电极凸出于基板时，错位的第一电极和第二电极被导电粒子导通而发生短路。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护 范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (17)

  1. 一种邦定结构，其中，所述邦定结构包括：
    第一基板，设有多个第一凹槽和多个第一电极，所述第一电极一一设于所述第一凹槽内且其厚度小于或等于所述第一凹槽的深度；
    第二基板，设有多个第二凹槽和多个第二电极，所述第二电极一一设于所述第二凹槽内且其厚度小于或等于所述第二凹槽的深度；
    各向异性导电胶，包括树脂凝胶和分布于所述树脂凝胶中的导电粒子，所述树脂凝胶提供在所述第一基板和第二基板之间，所述导电粒子提供第一电极和第二电极之间的电导通路径。
  2. 根据权利要求1所述的邦定结构，其中，所述导电粒子仅设置于相对准的第一凹槽和第二凹槽之间。
  3. 根据权利要求1所述的邦定结构，其中，相对准的第一凹槽和第二凹槽相同。
  4. 根据权利要求1所述的邦定结构，其中，相对准的第一凹槽和第二凹槽的开口尺寸之差小于所述导电粒子的最大径向尺寸。
  5. 根据权利要求1所述的邦定结构，其中，所述第一凹槽的槽壁与其所容置的第一电极的侧边相抵接，所述第二凹槽的槽壁与其所容置的第二电极的侧边相抵接。
  6. 一种显示面板，其中，所述显示面板包括显示单元、驱动单元以及邦定结构，所述邦定结构包括：
    第一基板，设有多个第一凹槽和多个第一电极，所述显示单元与所述第一电极连接，所述第一电极一一设于所述第一凹槽内且其厚度小于或等于所述第一凹槽的深度；
    第二基板，设有多个第二凹槽和多个第二电极，所述驱动单元与所述第二电极连接，所述第二电极一一设于所述第二凹槽内且其厚度小于或等于所述第二凹槽的深度；
    各向异性导电胶，包括树脂凝胶和分布于所述树脂凝胶中的导电粒子，所述树脂凝胶提供在所述第一基板和第二基板之间，所述导电粒子提供第一电极和第二电极之间的电导通路径。
  7. 根据权利要求6所述的显示面板，其中，所述导电粒子仅设置于相对准的第一凹槽和第二凹槽之间。
  8. 根据权利要求6所述的显示面板，其中，相对准的第一凹槽和第二凹槽相同。
  9. 根据权利要求6所述的显示面板，其中，相对准的第一凹槽和第二凹槽的开口尺寸之差小于所述导电粒子的最大径向尺寸。
  10. 根据权利要求6所述的显示面板，其中，所述第一凹槽的槽壁与其所容置的第一电极的侧边相抵接，所述第二凹槽的槽壁与其所容置的第二电极的侧边相抵接。
  11. 根据权利要求6所述的显示面板，其中，所述第一基板包括面板基板，所述第一电极位于所述面板基板的邦定区，所述第二基板为集成电路芯片基板或柔性印刷电路基板。
  12. 一种邦定结构的制备方法，其中，所述方法包括：
    提供具有多个第一凹槽和多个第一电极的第一基板，所述第一电极一一设于所述第一凹槽内且其厚度小于或等于所述第一凹槽的深度；
    提供具有多个第二凹槽和多个第二电极的第二基板，所述第二电极一一设于所述第二凹槽内且其厚度小于或等于所述第二凹槽的深度；
    将各向异性导电胶涂覆于所述第一基板上，且覆盖所述第一凹槽，所述各向异性导电胶包括树脂凝胶和分布于树脂凝胶中的导电粒子；
    将所述第二基板放置于所述各向异性导电胶涂上，并使所述第一电极和所述第二电极一一对准；
    热压并固化所述树脂凝胶，以使所述导电粒子在第一电极和第二电极之间提供电导通路径。
  13. 根据权利要求12所述的邦定结构的制备方法，其中，执行所述热压并固化所述树脂凝胶这一步骤的同时，所述方法包括：
    施加电场使所述树脂凝胶中的导电粒子仅设置于相对准的第一电极和第二电极之间。
  14. 根据权利要求12所述的邦定结构的制备方法，其中，相对准的第一凹槽和第二凹槽相同。
  15. 根据权利要求12所述的邦定结构的制备方法，其中，相对准的第一凹槽和第二凹槽的开口尺寸之差小于所述导电粒子的最大径向尺寸。
  16. 根据权利要求12所述的邦定结构的制备方法，其中，所述第一凹槽的槽壁与其所容置的第一电极的侧边相抵接，所述第二凹槽的槽壁与其所容置的第二电极的侧边相抵接。
  17. 根据权利要求12所述的邦定结构的制备方法，其中，所述第一基板包括面板基板，所述第一电极位于所述面板基板的邦定区，所述第二基板为集成电路芯片基板或柔性印刷电路基板，
    将各向异性导电胶涂覆于所述第一基板上这一步骤，包括：
    将各向异性导电胶涂覆于所述第一基板的邦定区。
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