CN1989600A - Cmp用研磨浆料 - Google Patents

Cmp用研磨浆料 Download PDF

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Publication number
CN1989600A
CN1989600A CNA2005800243676A CN200580024367A CN1989600A CN 1989600 A CN1989600 A CN 1989600A CN A2005800243676 A CNA2005800243676 A CN A2005800243676A CN 200580024367 A CN200580024367 A CN 200580024367A CN 1989600 A CN1989600 A CN 1989600A
Authority
CN
China
Prior art keywords
load
copper
polishing slurry
cmp
cmp polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800243676A
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English (en)
Chinese (zh)
Inventor
马渕胜美
赤星睛夫
上方康雄
羽广昌信
小野裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of CN1989600A publication Critical patent/CN1989600A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNA2005800243676A 2004-09-14 2005-08-09 Cmp用研磨浆料 Pending CN1989600A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP267366/2004 2004-09-14
JP2004267366 2004-09-14

Publications (1)

Publication Number Publication Date
CN1989600A true CN1989600A (zh) 2007-06-27

Family

ID=36059853

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800243676A Pending CN1989600A (zh) 2004-09-14 2005-08-09 Cmp用研磨浆料

Country Status (5)

Country Link
US (2) US20080105651A1 (enExample)
JP (1) JPWO2006030595A1 (enExample)
CN (1) CN1989600A (enExample)
TW (1) TW200619365A (enExample)
WO (1) WO2006030595A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102407482A (zh) * 2011-04-29 2012-04-11 上海华力微电子有限公司 调节金属研磨速率并改善研磨过程中产生的缺陷的方法
CN105336688A (zh) * 2014-05-28 2016-02-17 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN114350317A (zh) * 2021-12-28 2022-04-15 广东红日星实业有限公司 一种研磨液及其制备方法和应用

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KR100597449B1 (ko) * 1998-12-28 2006-07-06 히다치 가세고교 가부시끼가이샤 금속용 연마액 재료, 금속용 연마액, 그 제조방법 및그것을 사용한 연마방법
CN102863943B (zh) 2005-08-30 2015-03-25 花王株式会社 硬盘用基板用研磨液组合物、基板的研磨方法和制造方法
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
TWI437083B (zh) * 2006-07-28 2014-05-11 Showa Denko Kk 研磨組成物
JP5309495B2 (ja) * 2007-01-04 2013-10-09 富士通株式会社 半導体装置の製造方法
JP2008205432A (ja) * 2007-01-25 2008-09-04 Jsr Corp 電気光学表示装置用基板に設けられた銅または銅合金からなる配線層を研磨するための化学機械研磨用水系分散体および該化学機械研磨用水系分散体を調製するためのキット、ならびに化学機械研磨方法
WO2010078274A2 (en) 2008-12-31 2010-07-08 Memc Electronic Materials, Inc. Methods to recover and purify silicon particles from saw kerf
JP2012028516A (ja) * 2010-07-22 2012-02-09 Hitachi Chem Co Ltd 銅研磨用研磨液及びそれを用いた研磨方法
US20130186850A1 (en) * 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
JP2014027012A (ja) * 2012-07-24 2014-02-06 Toshiba Corp 半導体装置の製造方法および半導体装置の製造装置
KR102245055B1 (ko) * 2013-08-30 2021-04-26 쇼와덴코머티리얼즈가부시끼가이샤 슬러리, 연마액 세트, 연마액, 기체의 연마 방법 및 기체
CN103666373A (zh) * 2013-11-29 2014-03-26 渑池金华新材料有限公司 一种玉米芯抛光磨料
JP6817186B6 (ja) * 2014-07-15 2021-02-10 ビーエイエスエフ・ソシエタス・エウロパエアＢａｓｆ Ｓｅ 化学機械研磨（ｃｍｐ）組成物
US20160053381A1 (en) * 2014-08-22 2016-02-25 Cabot Microelectronics Corporation Germanium chemical mechanical polishing
TW201742900A (zh) * 2016-06-09 2017-12-16 日立化成股份有限公司 Cmp用研磨液及研磨方法
JP7316797B2 (ja) * 2018-09-04 2023-07-28 株式会社フジミインコーポレーテッド 研磨用組成物および研磨システム
CN111929121B (zh) * 2020-06-17 2024-01-05 风帆有限责任公司 铅酸蓄电池用铅合金金相样品制备及其组织显示的方法
JP7186477B1 (ja) 2022-08-03 2022-12-09 株式会社Doi Laboratory 電気化学計測装置
CN115651533A (zh) * 2022-11-02 2023-01-31 佛山科学技术学院 一种超疏水自修复硅烷涂料及其制备方法
CN119639353B (zh) * 2024-12-25 2025-09-19 河北工业大学创新研究院(石家庄) 一种用于tsv钛阻挡层的碱性抛光液及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
US6615499B1 (en) * 1999-05-28 2003-09-09 Hitachi Chemical Co., Ltd. Method for producing cerium oxide, cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor device
US6443812B1 (en) * 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
JP4078787B2 (ja) * 2000-03-31 2008-04-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2003037086A (ja) * 2001-07-24 2003-02-07 Sumitomo Chem Co Ltd 金属研磨組成物及び研磨方法
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
CN100386850C (zh) * 2001-10-31 2008-05-07 日立化成工业株式会社 研磨液及研磨方法
JP2003188120A (ja) * 2001-12-17 2003-07-04 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP2003218201A (ja) * 2002-01-24 2003-07-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
JP2004123879A (ja) * 2002-10-01 2004-04-22 Fujimi Inc 研磨用組成物
WO2003075332A1 (fr) * 2002-03-04 2003-09-12 Fujimi Incorporated Composition de polissage et creation d'une structure en fil
JP2004235319A (ja) * 2003-01-29 2004-08-19 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP4152218B2 (ja) * 2003-02-25 2008-09-17 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
US20050263407A1 (en) * 2004-05-28 2005-12-01 Cabot Microelectronics Corporation Electrochemical-mechanical polishing composition and method for using the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102407482A (zh) * 2011-04-29 2012-04-11 上海华力微电子有限公司 调节金属研磨速率并改善研磨过程中产生的缺陷的方法
CN105336688A (zh) * 2014-05-28 2016-02-17 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN105336688B (zh) * 2014-05-28 2018-07-10 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
CN114350317A (zh) * 2021-12-28 2022-04-15 广东红日星实业有限公司 一种研磨液及其制备方法和应用
CN114350317B (zh) * 2021-12-28 2023-08-15 广东红日星实业有限公司 一种研磨液及其制备方法和应用

Also Published As

Publication number Publication date
WO2006030595A1 (ja) 2006-03-23
JPWO2006030595A1 (ja) 2008-05-08
TWI311150B (enExample) 2009-06-21
TW200619365A (en) 2006-06-16
US20110027994A1 (en) 2011-02-03
US20080105651A1 (en) 2008-05-08

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