TW200619365A - Polishing slurry for chemical mechanical polishing - Google Patents

Polishing slurry for chemical mechanical polishing

Info

Publication number
TW200619365A
TW200619365A TW094128464A TW94128464A TW200619365A TW 200619365 A TW200619365 A TW 200619365A TW 094128464 A TW094128464 A TW 094128464A TW 94128464 A TW94128464 A TW 94128464A TW 200619365 A TW200619365 A TW 200619365A
Authority
TW
Taiwan
Prior art keywords
polishing
chemical mechanical
mechanical polishing
slurry
polishing slurry
Prior art date
Application number
TW094128464A
Other languages
English (en)
Chinese (zh)
Other versions
TWI311150B (enExample
Inventor
Katsumi Mabuchi
Haruo Akahoshi
Yasuo Kamigata
Masanobu Habiro
Hiroshi Ono
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW200619365A publication Critical patent/TW200619365A/zh
Application granted granted Critical
Publication of TWI311150B publication Critical patent/TWI311150B/zh

Links

Classifications

    • H10P52/403—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW094128464A 2004-09-14 2005-08-19 Polishing slurry for chemical mechanical polishing TW200619365A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004267366 2004-09-14

Publications (2)

Publication Number Publication Date
TW200619365A true TW200619365A (en) 2006-06-16
TWI311150B TWI311150B (enExample) 2009-06-21

Family

ID=36059853

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094128464A TW200619365A (en) 2004-09-14 2005-08-19 Polishing slurry for chemical mechanical polishing

Country Status (5)

Country Link
US (2) US20080105651A1 (enExample)
JP (1) JPWO2006030595A1 (enExample)
CN (1) CN1989600A (enExample)
TW (1) TW200619365A (enExample)
WO (1) WO2006030595A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8505733B2 (en) 2008-12-31 2013-08-13 Memc Singapore Pte. Ltd. Methods to slice a silicon ingot

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000039844A1 (fr) * 1998-12-28 2000-07-06 Hitachi Chemical Company, Ltd. Materiaux pour liquide de polissage de metal, liquide de polissage de metal, procede de preparation et procede de polissage connexes
CN102863943B (zh) * 2005-08-30 2015-03-25 花王株式会社 硬盘用基板用研磨液组合物、基板的研磨方法和制造方法
WO2007102138A2 (en) * 2007-01-02 2007-09-13 Freescale Semiconductor, Inc. Barrier slurry compositions and barrier cmp methods
WO2008013226A1 (en) * 2006-07-28 2008-01-31 Showa Denko K.K. Polishing composition
JP5309495B2 (ja) * 2007-01-04 2013-10-09 富士通株式会社 半導体装置の製造方法
JP2008205432A (ja) * 2007-01-25 2008-09-04 Jsr Corp 電気光学表示装置用基板に設けられた銅または銅合金からなる配線層を研磨するための化学機械研磨用水系分散体および該化学機械研磨用水系分散体を調製するためのキット、ならびに化学機械研磨方法
JP2012028516A (ja) * 2010-07-22 2012-02-09 Hitachi Chem Co Ltd 銅研磨用研磨液及びそれを用いた研磨方法
CN102407482A (zh) * 2011-04-29 2012-04-11 上海华力微电子有限公司 调节金属研磨速率并改善研磨过程中产生的缺陷的方法
US20130186850A1 (en) * 2012-01-24 2013-07-25 Applied Materials, Inc. Slurry for cobalt applications
JP2014027012A (ja) * 2012-07-24 2014-02-06 Toshiba Corp 半導体装置の製造方法および半導体装置の製造装置
US10131819B2 (en) * 2013-08-30 2018-11-20 Hitachi Chemical Company, Ltd Slurry, polishing solution set, polishing solution, and substrate polishing method
CN103666373A (zh) * 2013-11-29 2014-03-26 渑池金华新材料有限公司 一种玉米芯抛光磨料
CN105336688B (zh) * 2014-05-28 2018-07-10 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
EP3169737B1 (en) * 2014-07-15 2018-10-10 Basf Se A chemical mechanical polishing (cmp) composition
US20160053381A1 (en) * 2014-08-22 2016-02-25 Cabot Microelectronics Corporation Germanium chemical mechanical polishing
JPWO2017213255A1 (ja) * 2016-06-09 2019-05-16 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
JP7316797B2 (ja) * 2018-09-04 2023-07-28 株式会社フジミインコーポレーテッド 研磨用組成物および研磨システム
CN111929121B (zh) * 2020-06-17 2024-01-05 风帆有限责任公司 铅酸蓄电池用铅合金金相样品制备及其组织显示的方法
CN114350317B (zh) * 2021-12-28 2023-08-15 广东红日星实业有限公司 一种研磨液及其制备方法和应用
JP7186477B1 (ja) 2022-08-03 2022-12-09 株式会社Doi Laboratory 電気化学計測装置
CN115651533A (zh) * 2022-11-02 2023-01-31 佛山科学技术学院 一种超疏水自修复硅烷涂料及其制备方法
CN119639353B (zh) * 2024-12-25 2025-09-19 河北工业大学创新研究院(石家庄) 一种用于tsv钛阻挡层的碱性抛光液及其制备方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
TW455626B (en) * 1998-07-23 2001-09-21 Eternal Chemical Co Ltd Chemical mechanical abrasive composition for use in semiconductor processing
WO2000073211A1 (en) * 1999-05-28 2000-12-07 Hitachi Chemical Co., Ltd. Method for producing cerium oxide, cerium oxide abrasive, method for polishing substrate using the same and method for manufacturing semiconductor device
US6443812B1 (en) * 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
JP4078787B2 (ja) * 2000-03-31 2008-04-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2003037086A (ja) * 2001-07-24 2003-02-07 Sumitomo Chem Co Ltd 金属研磨組成物及び研磨方法
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
TWI314950B (en) * 2001-10-31 2009-09-21 Hitachi Chemical Co Ltd Polishing slurry and polishing method
JP2003188120A (ja) * 2001-12-17 2003-07-04 Hitachi Chem Co Ltd 金属用研磨液及び研磨方法
JP2003218201A (ja) * 2002-01-24 2003-07-31 Mitsubishi Electric Corp 半導体装置およびその製造方法
US20030162398A1 (en) * 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
CN100361277C (zh) * 2002-03-04 2008-01-09 福吉米株式会社 抛光组合物和用于形成配线结构的方法
JP2004123879A (ja) * 2002-10-01 2004-04-22 Fujimi Inc 研磨用組成物
JP2004235319A (ja) * 2003-01-29 2004-08-19 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
JP4152218B2 (ja) * 2003-02-25 2008-09-17 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US20050104048A1 (en) * 2003-11-13 2005-05-19 Thomas Terence M. Compositions and methods for polishing copper
US20050263407A1 (en) * 2004-05-28 2005-12-01 Cabot Microelectronics Corporation Electrochemical-mechanical polishing composition and method for using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8505733B2 (en) 2008-12-31 2013-08-13 Memc Singapore Pte. Ltd. Methods to slice a silicon ingot
US8528740B2 (en) 2008-12-31 2013-09-10 Memc Singapore Pte. Ltd. (Uen200614794D) Methods to recover and purify silicon particles from saw kerf
TWI449665B (zh) * 2008-12-31 2014-08-21 Memc Singapore Pte Ltd 自鋸縫回收及純化矽顆粒之方法

Also Published As

Publication number Publication date
CN1989600A (zh) 2007-06-27
US20080105651A1 (en) 2008-05-08
TWI311150B (enExample) 2009-06-21
WO2006030595A1 (ja) 2006-03-23
US20110027994A1 (en) 2011-02-03
JPWO2006030595A1 (ja) 2008-05-08

Similar Documents

Publication Publication Date Title
TW200619365A (en) Polishing slurry for chemical mechanical polishing
MY146015A (en) Silicon carbide polishing method utilizing water-soluble oxidizers
WO2009154903A3 (en) Methods for processing substrates having an antimicrobial coating
GB2507188A (en) Method for forming bonded structures and bonded structures formed thereby
WO2010120784A8 (en) Chemical mechanical polishing of silicon carbide comprising surfaces
UA97126C2 (ru) Процесс шлифования сапфирной основы
TW200801168A (en) Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, kit for chemical mechanical polishing, and kit for preparing aqueous dispersion for chemical mechanical polishing
WO2011049938A3 (en) Microelectronic processing component having a corrosion-resistant layer, microelectronic workpiece processing apparatus incorporating same, and method of forming an article having the corrosion-resistant layer
TW200624201A (en) Metallic fine particles, process for producing the same, composition containing the same, and use thereof
WO2004031455A3 (en) Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
WO2004068389A3 (en) Method of forming a conductive metal region on a substrate
TW200718763A (en) Polymeric barrier removal polishing slurry
TW200802985A (en) Radiation-emitting semiconductor body with carrier substrate and the method for fabricating the same
TW200720170A (en) Work transfer system
TW200617151A (en) Polishing composition and polishing method using the same
SG131043A1 (en) Metal duplex and method
SG171513A1 (en) Method for polishing a semiconductor wafer
MY155827A (en) Surface-treated metal plate
TW200731014A (en) Photosensitive composition
TW200621960A (en) Polishing composition and polishing method using the same
WO2006069738A8 (de) Verwendung von nichtionischen tensiden bei der metallgewinnung
WO2006105150A3 (en) Metal cmp process on one or more polishing stations using slurries with oxidizers
ATE431389T1 (de) Polierzusammensetzung und polierverfahren
WO2012049012A3 (de) Verfahren und bearbeitungsvorrichtung zur oberflächenbearbeitung von werkstücken
TW200624438A (en) Precursors for silica or metal silicate films

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees