CN1972552A - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN1972552A
CN1972552A CNA2006101439295A CN200610143929A CN1972552A CN 1972552 A CN1972552 A CN 1972552A CN A2006101439295 A CNA2006101439295 A CN A2006101439295A CN 200610143929 A CN200610143929 A CN 200610143929A CN 1972552 A CN1972552 A CN 1972552A
Authority
CN
China
Prior art keywords
waveguide
plasma processing
processing apparatus
plasma
slit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006101439295A
Other languages
English (en)
Chinese (zh)
Inventor
大见忠弘
平山昌树
堀口贵弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tohoku University NUC
Tokyo Electron Ltd
Sharp Corp
Original Assignee
Tohoku University NUC
Future Vision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tohoku University NUC, Future Vision Inc filed Critical Tohoku University NUC
Publication of CN1972552A publication Critical patent/CN1972552A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CNA2006101439295A 2005-11-04 2006-11-03 等离子体处理装置 Pending CN1972552A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005320777 2005-11-04
JP2005320777A JP4703371B2 (ja) 2005-11-04 2005-11-04 プラズマ処理装置

Publications (1)

Publication Number Publication Date
CN1972552A true CN1972552A (zh) 2007-05-30

Family

ID=38002702

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101439295A Pending CN1972552A (zh) 2005-11-04 2006-11-03 等离子体处理装置

Country Status (5)

Country Link
US (1) US7723637B2 (cg-RX-API-DMAC7.html)
JP (1) JP4703371B2 (cg-RX-API-DMAC7.html)
KR (1) KR100938041B1 (cg-RX-API-DMAC7.html)
CN (1) CN1972552A (cg-RX-API-DMAC7.html)
TW (1) TW200733823A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111492720A (zh) * 2017-12-18 2020-08-04 国立大学法人东海国立大学机构 等离子体产生装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101803472B (zh) * 2007-09-28 2012-07-18 东京毅力科创株式会社 等离子体处理装置
US8800483B2 (en) 2009-05-08 2014-08-12 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
JP5631088B2 (ja) * 2010-07-15 2014-11-26 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
US9397380B2 (en) * 2011-01-28 2016-07-19 Applied Materials, Inc. Guided wave applicator with non-gaseous dielectric for plasma chamber
JP5921241B2 (ja) * 2011-03-10 2016-05-24 国立大学法人名古屋大学 プラズマ生成装置、プラズマ処理装置及びプラズマ処理方法
US9947515B2 (en) * 2013-03-14 2018-04-17 Tokyo Electron Limited Microwave surface-wave plasma device
KR101427720B1 (ko) * 2013-03-27 2014-08-13 (주)트리플코어스코리아 단차부 및 블록부를 이용한 플라즈마 도파관
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US10490386B2 (en) 2017-06-27 2019-11-26 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
WO2021183373A1 (en) 2020-03-13 2021-09-16 Vandermeulen Peter F Methods and systems for medical plasma treatment and generation of plasma activated media
JP2022150627A (ja) * 2021-03-26 2022-10-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
US4814780A (en) * 1988-03-11 1989-03-21 Itt Gilfillan, A Division Of Itt Corporation Variable directional coupler
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
JP3158715B2 (ja) * 1992-03-30 2001-04-23 株式会社ダイヘン プラズマ処理装置
JPH06236799A (ja) * 1993-02-10 1994-08-23 Daihen Corp プラズマ処理装置
JPH0964611A (ja) 1995-08-28 1997-03-07 Hitachi Ltd インピーダンス制御方法および装置ならびにそれを用いたマイクロ波処理装置
US5731269A (en) * 1995-11-13 1998-03-24 Illinois Superconductor Corporation Mechanically adjustable coupling loop for a resonator
JP4203028B2 (ja) * 1996-07-08 2008-12-24 株式会社東芝 プラズマ処理装置
JP3497091B2 (ja) * 1998-07-23 2004-02-16 名古屋大学長 プラズマ生成用高周波パワーの制御方法、およびプラズマ発生装置
JP4295855B2 (ja) 1998-10-29 2009-07-15 忠弘 大見 レーザ発振装置、露光装置及びデバイスの製造方法
JP2000312045A (ja) 1999-02-26 2000-11-07 Tadahiro Omi レーザ発振装置、露光装置及びデバイスの製造方法
JP3792089B2 (ja) * 2000-01-14 2006-06-28 シャープ株式会社 プラズマプロセス装置
JP2001203099A (ja) * 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
JP2001326216A (ja) * 2000-05-18 2001-11-22 Shibaura Mechatronics Corp プラズマ処理装置
JP3957135B2 (ja) 2000-10-13 2007-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP3650025B2 (ja) * 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
JP4583618B2 (ja) * 2001-01-30 2010-11-17 日本高周波株式会社 プラズマ処理装置
JP4017098B2 (ja) 2001-07-27 2007-12-05 芝浦メカトロニクス株式会社 プラズマ発生装置及びプラズマ処理装置
JP2004153240A (ja) * 2002-10-09 2004-05-27 Advanced Lcd Technologies Development Center Co Ltd プラズマ処理装置
JP3870909B2 (ja) * 2003-01-31 2007-01-24 株式会社島津製作所 プラズマ処理装置
JP4732787B2 (ja) * 2005-04-26 2011-07-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5213150B2 (ja) * 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111492720A (zh) * 2017-12-18 2020-08-04 国立大学法人东海国立大学机构 等离子体产生装置
CN111492720B (zh) * 2017-12-18 2022-07-15 国立大学法人东海国立大学机构 等离子体产生装置

Also Published As

Publication number Publication date
KR100938041B1 (ko) 2010-01-21
JP4703371B2 (ja) 2011-06-15
JP2007128759A (ja) 2007-05-24
US7723637B2 (en) 2010-05-25
US20070102403A1 (en) 2007-05-10
TW200733823A (en) 2007-09-01
KR20070048617A (ko) 2007-05-09

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: TOKYO ELECTRON LTD. SHARP KABUSHIKI KAISHA

Free format text: FORMER OWNER: FUTURE VISION KK

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20110621

Address after: Miyagi Prefecture in Japan

Applicant after: Tokoku University of National University Corp.

Co-applicant after: Tokyo Electron Limited

Co-applicant after: Sharp Corporation

Address before: Miyagi Prefecture in Japan

Applicant before: Tokoku University of National University Corp.

Co-applicant before: Future Vision KK

AD01 Patent right deemed abandoned

Effective date of abandoning: 20070530

C20 Patent right or utility model deemed to be abandoned or is abandoned