TW200733823A - Plasma processing apparatus - Google Patents
Plasma processing apparatusInfo
- Publication number
- TW200733823A TW200733823A TW095140315A TW95140315A TW200733823A TW 200733823 A TW200733823 A TW 200733823A TW 095140315 A TW095140315 A TW 095140315A TW 95140315 A TW95140315 A TW 95140315A TW 200733823 A TW200733823 A TW 200733823A
- Authority
- TW
- Taiwan
- Prior art keywords
- microwave
- waveguide
- processing apparatus
- plasma processing
- plasma
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005320777A JP4703371B2 (ja) | 2005-11-04 | 2005-11-04 | プラズマ処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200733823A true TW200733823A (en) | 2007-09-01 |
Family
ID=38002702
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095140315A TW200733823A (en) | 2005-11-04 | 2006-10-31 | Plasma processing apparatus |
Country Status (5)
Country | Link |
---|---|
US (1) | US7723637B2 (zh) |
JP (1) | JP4703371B2 (zh) |
KR (1) | KR100938041B1 (zh) |
CN (1) | CN1972552A (zh) |
TW (1) | TW200733823A (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101803472B (zh) * | 2007-09-28 | 2012-07-18 | 东京毅力科创株式会社 | 等离子体处理装置 |
WO2010129901A2 (en) | 2009-05-08 | 2010-11-11 | Vandermeulen Peter F | Methods and systems for plasma deposition and treatment |
JP5631088B2 (ja) * | 2010-07-15 | 2014-11-26 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理方法 |
US9397380B2 (en) * | 2011-01-28 | 2016-07-19 | Applied Materials, Inc. | Guided wave applicator with non-gaseous dielectric for plasma chamber |
JP5921241B2 (ja) * | 2011-03-10 | 2016-05-24 | 国立大学法人名古屋大学 | プラズマ生成装置、プラズマ処理装置及びプラズマ処理方法 |
US9947515B2 (en) * | 2013-03-14 | 2018-04-17 | Tokyo Electron Limited | Microwave surface-wave plasma device |
KR101427720B1 (ko) * | 2013-03-27 | 2014-08-13 | (주)트리플코어스코리아 | 단차부 및 블록부를 이용한 플라즈마 도파관 |
CN111033689B (zh) | 2017-06-27 | 2023-07-28 | 彼得·F·范德莫伊伦 | 用于等离子体沉积和处理的方法及系统 |
US10861667B2 (en) | 2017-06-27 | 2020-12-08 | Peter F. Vandermeulen | Methods and systems for plasma deposition and treatment |
WO2019124315A1 (ja) * | 2017-12-18 | 2019-06-27 | 国立大学法人名古屋大学 | プラズマ発生装置 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4814780A (en) * | 1988-03-11 | 1989-03-21 | Itt Gilfillan, A Division Of Itt Corporation | Variable directional coupler |
US5134965A (en) * | 1989-06-16 | 1992-08-04 | Hitachi, Ltd. | Processing apparatus and method for plasma processing |
JP3158715B2 (ja) * | 1992-03-30 | 2001-04-23 | 株式会社ダイヘン | プラズマ処理装置 |
JPH06236799A (ja) * | 1993-02-10 | 1994-08-23 | Daihen Corp | プラズマ処理装置 |
JPH0964611A (ja) | 1995-08-28 | 1997-03-07 | Hitachi Ltd | インピーダンス制御方法および装置ならびにそれを用いたマイクロ波処理装置 |
US5731269A (en) * | 1995-11-13 | 1998-03-24 | Illinois Superconductor Corporation | Mechanically adjustable coupling loop for a resonator |
JP4203028B2 (ja) * | 1996-07-08 | 2008-12-24 | 株式会社東芝 | プラズマ処理装置 |
JP3497091B2 (ja) * | 1998-07-23 | 2004-02-16 | 名古屋大学長 | プラズマ生成用高周波パワーの制御方法、およびプラズマ発生装置 |
JP4295855B2 (ja) | 1998-10-29 | 2009-07-15 | 忠弘 大見 | レーザ発振装置、露光装置及びデバイスの製造方法 |
JP2000312045A (ja) | 1999-02-26 | 2000-11-07 | Tadahiro Omi | レーザ発振装置、露光装置及びデバイスの製造方法 |
JP3792089B2 (ja) * | 2000-01-14 | 2006-06-28 | シャープ株式会社 | プラズマプロセス装置 |
JP2001203099A (ja) * | 2000-01-20 | 2001-07-27 | Yac Co Ltd | プラズマ生成装置およびプラズマ処理装置 |
JP2001326216A (ja) * | 2000-05-18 | 2001-11-22 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP3957135B2 (ja) | 2000-10-13 | 2007-08-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP3650025B2 (ja) * | 2000-12-04 | 2005-05-18 | シャープ株式会社 | プラズマプロセス装置 |
JP4583618B2 (ja) * | 2001-01-30 | 2010-11-17 | 日本高周波株式会社 | プラズマ処理装置 |
JP4017098B2 (ja) | 2001-07-27 | 2007-12-05 | 芝浦メカトロニクス株式会社 | プラズマ発生装置及びプラズマ処理装置 |
JP2004153240A (ja) * | 2002-10-09 | 2004-05-27 | Advanced Lcd Technologies Development Center Co Ltd | プラズマ処理装置 |
JP3870909B2 (ja) * | 2003-01-31 | 2007-01-24 | 株式会社島津製作所 | プラズマ処理装置 |
JP4732787B2 (ja) * | 2005-04-26 | 2011-07-27 | 東京エレクトロン株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP5213150B2 (ja) * | 2005-08-12 | 2013-06-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法 |
-
2005
- 2005-11-04 JP JP2005320777A patent/JP4703371B2/ja not_active Expired - Fee Related
-
2006
- 2006-10-31 TW TW095140315A patent/TW200733823A/zh unknown
- 2006-11-03 KR KR1020060108043A patent/KR100938041B1/ko not_active IP Right Cessation
- 2006-11-03 CN CNA2006101439295A patent/CN1972552A/zh active Pending
- 2006-11-03 US US11/592,253 patent/US7723637B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100938041B1 (ko) | 2010-01-21 |
JP2007128759A (ja) | 2007-05-24 |
CN1972552A (zh) | 2007-05-30 |
JP4703371B2 (ja) | 2011-06-15 |
KR20070048617A (ko) | 2007-05-09 |
US20070102403A1 (en) | 2007-05-10 |
US7723637B2 (en) | 2010-05-25 |
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