WO2009041629A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
WO2009041629A1
WO2009041629A1 PCT/JP2008/067513 JP2008067513W WO2009041629A1 WO 2009041629 A1 WO2009041629 A1 WO 2009041629A1 JP 2008067513 W JP2008067513 W JP 2008067513W WO 2009041629 A1 WO2009041629 A1 WO 2009041629A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing device
plasma processing
waveguide
stub
flat waveguide
Prior art date
Application number
PCT/JP2008/067513
Other languages
English (en)
French (fr)
Inventor
Ryosaku Ota
Hikaru Adachi
Toshio Nakanishi
Atsushi Ueda
Songyun Kang
Paul Moroz
Peter Ventzek
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to US12/680,321 priority Critical patent/US20100307684A1/en
Priority to KR1020107005342A priority patent/KR101196075B1/ko
Priority to CN2008801080129A priority patent/CN101803472B/zh
Publication of WO2009041629A1 publication Critical patent/WO2009041629A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

　スロットアンテナ方式のマイクロ波プラズマ処理装置１００は、扁平導波管を構成する平面アンテナ板３１および導電性部材からなるカバー３４を備える。カバー３４に、扁平導波管内の電界分布を調整するための第２の導波管としてのスタブ４３を備えている。スタブ４３は、導電性部材からなるカバー３４が設けられている。スタブ４３は、平面視で、平面アンテナ板３１の最外周に配列されたスロット対を構成するスロット３２と重なる位置に配置されている。スタブ４３の適正な配置により、扁平導波管内の電界分布を制御して均一なプラズマを生成することができる。
PCT/JP2008/067513 2007-09-28 2008-09-26 プラズマ処理装置 WO2009041629A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/680,321 US20100307684A1 (en) 2007-09-28 2008-09-26 Plasma processing apparatus
KR1020107005342A KR101196075B1 (ko) 2007-09-28 2008-09-26 플라즈마 처리 장치
CN2008801080129A CN101803472B (zh) 2007-09-28 2008-09-26 等离子体处理装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-254270 2007-09-28
JP2007254271 2007-09-28
JP2007254270 2007-09-28
JP2007-254271 2007-09-28

Publications (1)

Publication Number Publication Date
WO2009041629A1 true WO2009041629A1 (ja) 2009-04-02

Family

ID=40511509

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/067513 WO2009041629A1 (ja) 2007-09-28 2008-09-26 プラズマ処理装置

Country Status (4)

Country Link
US (1) US20100307684A1 (ja)
KR (1) KR101196075B1 (ja)
CN (1) CN101803472B (ja)
WO (1) WO2009041629A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011058921A1 (ja) * 2009-11-12 2011-05-19 東京エレクトロン株式会社 プラズマ処理装置およびマイクロ波伝播体

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013103761A1 (en) * 2012-01-06 2013-07-11 Ranjit Gharpurey Microwave oven with antenna array
JP2014026773A (ja) * 2012-07-25 2014-02-06 Tokyo Electron Ltd プラズマ処理装置
TWI553700B (zh) * 2013-11-06 2016-10-11 東京威力科創股份有限公司 多單元共振器微波表面波電漿設備
JP2016009711A (ja) * 2014-06-23 2016-01-18 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9928993B2 (en) * 2015-01-07 2018-03-27 Applied Materials, Inc. Workpiece processing chamber having a rotary microwave plasma antenna with slotted spiral waveguide
JP2016225047A (ja) * 2015-05-27 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置
JP6683924B2 (ja) * 2016-06-23 2020-04-22 東京エレクトロン株式会社 プラズマ調整用の支援装置、プラズマ調整方法及び記憶媒体
TWI738920B (zh) * 2016-11-14 2021-09-11 日商東京威力科創股份有限公司 半導體製造方法及相關裝置與電漿處理系統
US20190051495A1 (en) * 2017-08-10 2019-02-14 Qiwei Liang Microwave Reactor For Deposition or Treatment of Carbon Compounds
JP7067913B2 (ja) * 2017-12-13 2022-05-16 東京エレクトロン株式会社 プラズマ処理装置
CN111048392B (zh) * 2019-11-22 2022-09-16 北京北方华创微电子装备有限公司 一种等离子工艺设备

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231637A (ja) * 2001-01-30 2002-08-16 Nihon Koshuha Co Ltd プラズマ処理装置
JP2006040609A (ja) * 2004-07-23 2006-02-09 Naohisa Goto プラズマ処理装置および方法、並びにフラットパネルディスプレイ装置の製造方法
JP2006324551A (ja) * 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP2006339547A (ja) * 2005-06-06 2006-12-14 Hitachi High-Technologies Corp プラズマ処理装置
JP2007048718A (ja) * 2005-08-12 2007-02-22 Tohoku Univ プラズマ処理装置
JP2007128759A (ja) * 2005-11-04 2007-05-24 Tohoku Univ プラズマ処理装置
JP2007213994A (ja) * 2006-02-09 2007-08-23 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2993675B2 (ja) * 1989-02-08 1999-12-20 株式会社日立製作所 プラズマ処理方法及びその装置
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
TW516113B (en) * 1999-04-14 2003-01-01 Hitachi Ltd Plasma processing device and plasma processing method
TW480594B (en) * 1999-11-30 2002-03-21 Tokyo Electron Ltd Plasma processing apparatus
JP3828539B2 (ja) * 2001-06-20 2006-10-04 忠弘 大見 マイクロ波プラズマ処理装置、プラズマ処理方法及びマイクロ波放射部材
JP4209612B2 (ja) * 2001-12-19 2009-01-14 東京エレクトロン株式会社 プラズマ処理装置
US20090194236A1 (en) * 2004-06-25 2009-08-06 Kyoto University Plasma processing equipment

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231637A (ja) * 2001-01-30 2002-08-16 Nihon Koshuha Co Ltd プラズマ処理装置
JP2006040609A (ja) * 2004-07-23 2006-02-09 Naohisa Goto プラズマ処理装置および方法、並びにフラットパネルディスプレイ装置の製造方法
JP2006324551A (ja) * 2005-05-20 2006-11-30 Shibaura Mechatronics Corp プラズマ発生装置及びプラズマ処理装置
JP2006339547A (ja) * 2005-06-06 2006-12-14 Hitachi High-Technologies Corp プラズマ処理装置
JP2007048718A (ja) * 2005-08-12 2007-02-22 Tohoku Univ プラズマ処理装置
JP2007128759A (ja) * 2005-11-04 2007-05-24 Tohoku Univ プラズマ処理装置
JP2007213994A (ja) * 2006-02-09 2007-08-23 Tokyo Electron Ltd プラズマ処理装置及びプラズマ処理方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011058921A1 (ja) * 2009-11-12 2011-05-19 東京エレクトロン株式会社 プラズマ処理装置およびマイクロ波伝播体

Also Published As

Publication number Publication date
KR101196075B1 (ko) 2012-11-01
CN101803472B (zh) 2012-07-18
US20100307684A1 (en) 2010-12-09
KR20100054826A (ko) 2010-05-25
CN101803472A (zh) 2010-08-11

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