KR100938041B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

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Publication number
KR100938041B1
KR100938041B1 KR1020060108043A KR20060108043A KR100938041B1 KR 100938041 B1 KR100938041 B1 KR 100938041B1 KR 1020060108043 A KR1020060108043 A KR 1020060108043A KR 20060108043 A KR20060108043 A KR 20060108043A KR 100938041 B1 KR100938041 B1 KR 100938041B1
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KR
South Korea
Prior art keywords
waveguide
plasma processing
processing apparatus
plasma
microwave
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Expired - Fee Related
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KR1020060108043A
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English (en)
Korean (ko)
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KR20070048617A (ko
Inventor
다다히로 오오미
마사끼 히라야마
다까히로 호리구찌
Original Assignee
도호쿠 다이가쿠
가부시끼가이샤 퓨처 비전
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Publication of KR20070048617A publication Critical patent/KR20070048617A/ko
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Publication of KR100938041B1 publication Critical patent/KR100938041B1/ko
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020060108043A 2005-11-04 2006-11-03 플라즈마 처리 장치 Expired - Fee Related KR100938041B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00320777 2005-11-04
JP2005320777A JP4703371B2 (ja) 2005-11-04 2005-11-04 プラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20070048617A KR20070048617A (ko) 2007-05-09
KR100938041B1 true KR100938041B1 (ko) 2010-01-21

Family

ID=38002702

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060108043A Expired - Fee Related KR100938041B1 (ko) 2005-11-04 2006-11-03 플라즈마 처리 장치

Country Status (5)

Country Link
US (1) US7723637B2 (cg-RX-API-DMAC7.html)
JP (1) JP4703371B2 (cg-RX-API-DMAC7.html)
KR (1) KR100938041B1 (cg-RX-API-DMAC7.html)
CN (1) CN1972552A (cg-RX-API-DMAC7.html)
TW (1) TW200733823A (cg-RX-API-DMAC7.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101803472B (zh) * 2007-09-28 2012-07-18 东京毅力科创株式会社 等离子体处理装置
US8800483B2 (en) 2009-05-08 2014-08-12 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
JP5631088B2 (ja) * 2010-07-15 2014-11-26 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理方法
US9397380B2 (en) * 2011-01-28 2016-07-19 Applied Materials, Inc. Guided wave applicator with non-gaseous dielectric for plasma chamber
JP5921241B2 (ja) * 2011-03-10 2016-05-24 国立大学法人名古屋大学 プラズマ生成装置、プラズマ処理装置及びプラズマ処理方法
US9947515B2 (en) * 2013-03-14 2018-04-17 Tokyo Electron Limited Microwave surface-wave plasma device
KR101427720B1 (ko) * 2013-03-27 2014-08-13 (주)트리플코어스코리아 단차부 및 블록부를 이용한 플라즈마 도파관
US10861667B2 (en) 2017-06-27 2020-12-08 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
US10490386B2 (en) 2017-06-27 2019-11-26 Peter F. Vandermeulen Methods and systems for plasma deposition and treatment
WO2019124315A1 (ja) * 2017-12-18 2019-06-27 国立大学法人名古屋大学 プラズマ発生装置
WO2021183373A1 (en) 2020-03-13 2021-09-16 Vandermeulen Peter F Methods and systems for medical plasma treatment and generation of plasma activated media
JP2022150627A (ja) * 2021-03-26 2022-10-07 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040032744A (ko) * 2002-10-09 2004-04-17 가부시끼가이샤 에키쇼 센탄 기쥬츠 가이하쯔 센터 플라즈마 처리장치
JP2004235562A (ja) * 2003-01-31 2004-08-19 Shimadzu Corp プラズマ処理装置

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US4814780A (en) * 1988-03-11 1989-03-21 Itt Gilfillan, A Division Of Itt Corporation Variable directional coupler
US5134965A (en) * 1989-06-16 1992-08-04 Hitachi, Ltd. Processing apparatus and method for plasma processing
JP3158715B2 (ja) * 1992-03-30 2001-04-23 株式会社ダイヘン プラズマ処理装置
JPH06236799A (ja) * 1993-02-10 1994-08-23 Daihen Corp プラズマ処理装置
JPH0964611A (ja) 1995-08-28 1997-03-07 Hitachi Ltd インピーダンス制御方法および装置ならびにそれを用いたマイクロ波処理装置
US5731269A (en) * 1995-11-13 1998-03-24 Illinois Superconductor Corporation Mechanically adjustable coupling loop for a resonator
JP4203028B2 (ja) * 1996-07-08 2008-12-24 株式会社東芝 プラズマ処理装置
JP3497091B2 (ja) * 1998-07-23 2004-02-16 名古屋大学長 プラズマ生成用高周波パワーの制御方法、およびプラズマ発生装置
JP4295855B2 (ja) 1998-10-29 2009-07-15 忠弘 大見 レーザ発振装置、露光装置及びデバイスの製造方法
JP2000312045A (ja) 1999-02-26 2000-11-07 Tadahiro Omi レーザ発振装置、露光装置及びデバイスの製造方法
JP3792089B2 (ja) * 2000-01-14 2006-06-28 シャープ株式会社 プラズマプロセス装置
JP2001203099A (ja) * 2000-01-20 2001-07-27 Yac Co Ltd プラズマ生成装置およびプラズマ処理装置
JP2001326216A (ja) * 2000-05-18 2001-11-22 Shibaura Mechatronics Corp プラズマ処理装置
JP3957135B2 (ja) 2000-10-13 2007-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP3650025B2 (ja) * 2000-12-04 2005-05-18 シャープ株式会社 プラズマプロセス装置
JP4583618B2 (ja) * 2001-01-30 2010-11-17 日本高周波株式会社 プラズマ処理装置
JP4017098B2 (ja) 2001-07-27 2007-12-05 芝浦メカトロニクス株式会社 プラズマ発生装置及びプラズマ処理装置
JP4732787B2 (ja) * 2005-04-26 2011-07-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5213150B2 (ja) * 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040032744A (ko) * 2002-10-09 2004-04-17 가부시끼가이샤 에키쇼 센탄 기쥬츠 가이하쯔 센터 플라즈마 처리장치
JP2004235562A (ja) * 2003-01-31 2004-08-19 Shimadzu Corp プラズマ処理装置

Also Published As

Publication number Publication date
JP4703371B2 (ja) 2011-06-15
JP2007128759A (ja) 2007-05-24
US7723637B2 (en) 2010-05-25
US20070102403A1 (en) 2007-05-10
CN1972552A (zh) 2007-05-30
TW200733823A (en) 2007-09-01
KR20070048617A (ko) 2007-05-09

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