CN1945812B - 液晶显示器基板的制造 - Google Patents

液晶显示器基板的制造 Download PDF

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Publication number
CN1945812B
CN1945812B CN2006101399438A CN200610139943A CN1945812B CN 1945812 B CN1945812 B CN 1945812B CN 2006101399438 A CN2006101399438 A CN 2006101399438A CN 200610139943 A CN200610139943 A CN 200610139943A CN 1945812 B CN1945812 B CN 1945812B
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CN
China
Prior art keywords
laser beam
insulating layer
electrode
contact hole
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN2006101399438A
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English (en)
Chinese (zh)
Other versions
CN1945812A (zh
Inventor
李永范
朴明一
金京燮
李庸懿
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Samsung Display Co Ltd
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Samsung Electronics Co Ltd
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Publication date
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Publication of CN1945812A publication Critical patent/CN1945812A/zh
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Publication of CN1945812B publication Critical patent/CN1945812B/zh
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Laser Beam Processing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2006101399438A 2005-09-27 2006-09-27 液晶显示器基板的制造 Expired - Fee Related CN1945812B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020050089856A KR20070035234A (ko) 2005-09-27 2005-09-27 표시 기판의 제조 방법 및 이를 제조하기 위한 제조 장치
KR2005-0089856 2005-09-27
KR20050089856 2005-09-27

Publications (2)

Publication Number Publication Date
CN1945812A CN1945812A (zh) 2007-04-11
CN1945812B true CN1945812B (zh) 2010-06-16

Family

ID=37980110

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006101399438A Expired - Fee Related CN1945812B (zh) 2005-09-27 2006-09-27 液晶显示器基板的制造

Country Status (5)

Country Link
US (1) US20070117280A1 (enExample)
JP (1) JP2007094389A (enExample)
KR (1) KR20070035234A (enExample)
CN (1) CN1945812B (enExample)
TW (1) TW200717819A (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7943287B2 (en) * 2006-07-28 2011-05-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
TWI412079B (zh) * 2006-07-28 2013-10-11 Semiconductor Energy Lab 製造顯示裝置的方法
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148259B2 (en) 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI328861B (en) * 2007-03-13 2010-08-11 Au Optronics Corp Fabrication methods of thin film transistor substrate
KR101495214B1 (ko) * 2008-10-29 2015-03-03 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
JP5884306B2 (ja) * 2011-06-13 2016-03-15 ソニー株式会社 薄膜トランジスタおよびその製造方法、ならびに電子機器
JP6730801B2 (ja) 2015-12-03 2020-07-29 新光電気工業株式会社 光導波路の製造方法
CN110389685A (zh) * 2019-07-23 2019-10-29 京东方科技集团股份有限公司 触控显示面板及其制作方法、和显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6195138B1 (en) * 1995-08-11 2001-02-27 Sharp Kabushiki Kaisha Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching
CN1403861A (zh) * 2001-08-31 2003-03-19 日本电气株式会社 反射器和液晶显示器的制造方法
US6593224B1 (en) * 2002-03-05 2003-07-15 Bridge Semiconductor Corporation Method of manufacturing a multilayer interconnect substrate
US20040125248A1 (en) * 2002-12-31 2004-07-01 Lg. Philips Lcd Co., Ltd. Liquid crystal display and fabrication method thereof
US20050140888A1 (en) * 2003-12-30 2005-06-30 Kwon Oh N. Liquid crystal display device and fabrication method thereof

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Publication number Priority date Publication date Assignee Title
JP3635701B2 (ja) * 1994-12-02 2005-04-06 松下電器産業株式会社 加工装置
US6103992A (en) * 1996-11-08 2000-08-15 W. L. Gore & Associates, Inc. Multiple frequency processing to minimize manufacturing variability of high aspect ratio micro through-vias
JP3474774B2 (ja) * 1998-05-29 2003-12-08 リコーマイクロエレクトロニクス株式会社 インクジェットヘッドのノズルプレートの製造方法
JP3526224B2 (ja) * 1998-10-20 2004-05-10 シャープ株式会社 加工方法および光学部品
JP2001071168A (ja) * 1999-06-30 2001-03-21 Canon Inc レーザ加工方法、該レーザ加工方法を用いたインクジェット記録ヘッドの製造方法、該製造方法で製造されたインクジェット記録ヘッド
US20020110673A1 (en) * 2001-02-14 2002-08-15 Ramin Heydarpour Multilayered electrode/substrate structures and display devices incorporating the same
DE10125397B4 (de) * 2001-05-23 2005-03-03 Siemens Ag Verfahren zum Bohren von Mikrolöchern mit einem Laserstrahl
JP2003022035A (ja) * 2001-07-10 2003-01-24 Sharp Corp 有機ｅｌパネルおよびその製造方法
JP3478813B2 (ja) * 2001-07-11 2003-12-15 浜松ホトニクス株式会社 輝点欠陥の修正方法及び液晶表示器の作製方法
JP4839533B2 (ja) * 2001-07-11 2011-12-21 ソニー株式会社 画像表示装置及びその製造方法
US6843587B2 (en) * 2002-05-11 2005-01-18 Ls Tech Co., Ltd. Surface light source apparatus, and method and apparatus for manufacturing the same
JP2004053828A (ja) * 2002-07-18 2004-02-19 Alps Electric Co Ltd アクティブマトリクス型表示装置
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
JP4264627B2 (ja) * 2002-12-04 2009-05-20 ソニー株式会社 フラットパネルディスプレイの製造方法
JP2005026285A (ja) * 2003-06-30 2005-01-27 Nikon Corp 熱処理方法及び熱処理装置
JP4288484B2 (ja) * 2003-11-05 2009-07-01 株式会社日立ハイテクノロジーズ 基板の欠陥修正装置及びその方法並びに液晶基板
JP2006259383A (ja) * 2005-03-17 2006-09-28 Seiko Epson Corp 電子デバイス用基板の製造方法、電子デバイス用基板、電子デバイスおよび電子機器
JP2007019014A (ja) * 2005-07-06 2007-01-25 Samsung Sdi Co Ltd 平板表示装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6195138B1 (en) * 1995-08-11 2001-02-27 Sharp Kabushiki Kaisha Transmission type liquid crystal display having an organic interlayer elements film between pixel electrodes and switching
CN1403861A (zh) * 2001-08-31 2003-03-19 日本电气株式会社 反射器和液晶显示器的制造方法
US6593224B1 (en) * 2002-03-05 2003-07-15 Bridge Semiconductor Corporation Method of manufacturing a multilayer interconnect substrate
US20040125248A1 (en) * 2002-12-31 2004-07-01 Lg. Philips Lcd Co., Ltd. Liquid crystal display and fabrication method thereof
US20050140888A1 (en) * 2003-12-30 2005-06-30 Kwon Oh N. Liquid crystal display device and fabrication method thereof

Also Published As

Publication number Publication date
JP2007094389A (ja) 2007-04-12
CN1945812A (zh) 2007-04-11
TW200717819A (en) 2007-05-01
KR20070035234A (ko) 2007-03-30
US20070117280A1 (en) 2007-05-24

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Owner name: SAMSUNG DISPLAY CO., LTD.

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Effective date: 20121129

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Effective date of registration: 20121129

Address after: Gyeonggi Do, South Korea

Patentee after: SAMSUNG DISPLAY Co.,Ltd.

Address before: Gyeonggi Do, South Korea

Patentee before: Samsung Electronics Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100616

Termination date: 20210927