CN1904739A - 半导体器件的阱光致抗蚀剂图案及其形成方法 - Google Patents
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Abstract
公开了一种半导体的阱光致抗蚀剂图案及其制造方法。该方法包括以下步骤:(a)在半导体衬底上形成牺牲氧化物层;(b)在该牺牲氧化物层上施加HDMS;(c)在该HMDS上施加光致抗蚀剂;(d)对该光致抗蚀剂进行软烘烤;(e)通过对在衬底上所传递的光的DOF(焦距深度)进行散焦,将光致抗蚀剂曝光;(f)对光致抗蚀剂进行曝光后烘烤;(g)对所曝光的光致抗蚀剂进行显影以形成阱图案;以及(h)对阱光致抗蚀剂图案进行硬烘烤。优选地,所述曝光通过光的正(+)散焦来执行。
Description
本申请要求于2005年7月26日提交的韩国专利申请No.10-2005-0067880的权益,此处通过引用将其全部内容合并于此。
技术领域
本发明涉及一种用于半导体器件的制造方法,更具体地,涉及一种用于形成具有圆化的上边缘的阱光致抗蚀剂图案的方法,该上边缘在曝光步骤通过对光的DOF(聚焦深度)进行散焦而被圆化。
背景技术
作为引导高集成半导体器件的基本技术,光刻是一种用于使用光在半导体衬底上形成光致抗蚀剂图案的工艺。
用于形成光致抗蚀剂图案的传统方法如下。当具有光致抗蚀剂的衬底通过具有图案的掩模被暴露在光中时,进行了一种光化学反应。通过调节光的DOF(聚焦深度),在衬底上所传递的光将具有最佳的焦距(0焦距)。在使用显影溶液将所曝光的光致抗蚀剂消除之后,只有用于形成器件的光致抗蚀剂图案留在衬底上。这里,光致抗蚀剂图案具有正交形的上边缘。在蚀刻工艺和离子注入工艺中,该光致抗蚀剂图案起掩模的作用。
图1示出了使用光致抗蚀剂图案的传统的阱离子注入工艺。
在具有光致抗蚀剂图案30a的半导体衬底10上执行阱离子注入工艺。这里,在衬底10中所注入的一些离子60与光致抗蚀剂图案30a的正交边缘碰撞而被散射。如果所散射的离子60a进入有源区70,发生了阱邻近效应(well proximity effect)。更具体地,栅电极70a和源/漏区70b通过之后的步骤被形成在有源区70之中。因而,如果所散射的离子60a进入有源区70,则器件的阈值电压增加且饱和电流降低。
发明内容
因而,本发明的一个目的是,提供一种用于形成具有圆化的上边缘的阱光致抗蚀剂图案的方法,该上边缘通过在曝光步骤的对光的DOF进行(+)散焦而被圆化。
本发明的另一目的是,通过形成具有圆化的上边缘的阱光致抗蚀剂图案,防止在执行阱离子注入工艺时的阱邻近效应。
为了实现上述目的,根据本发明的用于形成阱光致抗蚀剂图案的方法的实施例包括以下步骤:(a)在半导体衬底上形成牺牲氧化物层;(b)在该牺牲氧化物层上施加HDMS(六甲基二硅氮烷);(c)在HMDS上施加光致抗蚀剂;(d)对光致抗蚀剂进行软烘烤(soft-bake);(e)通过对衬底上所传递的光的DOF(聚焦深度)进行散焦,将光致抗蚀剂曝光;(f)对所曝光的光致抗蚀剂进行曝光后烘烤(post exposure bake);(g)对所曝光的光致抗蚀剂进行显影以形成阱图案;以及(h)对阱光致抗蚀剂图案进行硬烘烤(hard-bake)。优选地,曝光通过光的正(+)散焦来执行。还优选地,阱光致抗蚀剂图案的上边缘具有圆化的形状。
通过参考以下经常参照附图的对本发明的描述,本发明的这些和其他方面将变得明显。
附图说明
图1是使用光致抗蚀剂图案的传统阱离子注入工艺的横截面视图。
图2是根据本发明的用于在衬底上形成牺牲层以及施加HMDS(六甲基二硅胺烷)和光致抗蚀剂的工艺的横截面视图。
图3是根据本发明的曝光工艺。
图4是根据本发明的阱光致抗蚀剂图案的横截面视图。
图5是根据本发明的使用阱光致抗蚀剂图案的阱离子注入工艺。
具体实施方式
为了阐明本发明的要点,在本描述中没有示出在相关技术领域中已广泛公知的技术和不直接涉及本发明的技术。由于相同的原因,一些组件被省略、放大或近似地图示在附图中,由此组件的尺寸并非总是反应实际情况。
图2至5示出了根据本发明的用于形成阱光致抗蚀剂图案的方法。
如图2中所示,首先,将牺牲氧化物层20形成在半导体衬底10上。氧化物层20防止杂质深地进入衬底以及在离子注入工艺中衬底的损伤。
接着,HMDS(六甲基二硅氮烷)被入射在牺牲氧化物层20上以增加光致抗蚀剂的粘合强度。在入射光致抗蚀剂30之后,以高转数来旋转衬底10,以在衬底的整个表面上将光致抗蚀剂30施加为均匀的薄层。依次地,通过对衬底10进行加热来执行软烘烤工艺。如果通过加热将光致抗蚀剂的溶剂蒸发,可提高所干化的光致抗蚀剂30的粘合强度。
随后,使用步进光刻机通过阱掩模40,使光50入射在具有所施加的光致抗蚀剂30的衬底10的整个表面上。这里,优选地,所传递的光50的焦点可通过调整光的DOF而被正(+)散焦。阱光致抗蚀剂图案可具有通过此工艺所圆化的上边缘。然后,执行曝光后烘烤工艺。这里,可改善在曝光区和未暴露区之间的波型轮廓。
如图4中所示,阱光致抗蚀剂图案30b通过显影工艺而形成。优选地,显影溶液是TMAH(四甲基氢氧化铵)。显影溶液可将通过曝光工艺而松开的部分中的光致抗蚀剂30熔化和消除。此处,完成了具有圆化的上边缘的阱光致抗蚀剂图案30b。此后,执行硬烘烤工艺。将阱光致抗蚀剂图案30b干化并硬化,使得了提高光致抗蚀剂图案与衬底10的粘合强度。
当执行阱离子注入工艺时,所生成的阱光致抗蚀剂图案可起掩模的作用。图5示出了使用阱光致抗蚀剂图案的阱离子注入工艺。
当在具有阱光致抗蚀剂图案30b的半导体衬底10上执行阱离子注入工艺时,在衬底10中所入射的一些离子60与阱光致抗蚀剂图案30b碰撞而被散射。阱光致抗蚀剂图案30b具有圆化的上边缘,由此可阻止所散射的离子60a的阱邻近效应。
用于在半导体器件上形成阱光致抗蚀剂图案的本方法,通过使阱光致抗蚀剂图案的上边缘圆化,可防止阱邻近效应。另外,对阱邻近效应的防止可将阈值电压和饱和电流量实施在正常范围中。
尽管参考本发明的某些优选实施例示出并描述了本发明,本领域技术人员应理解,在不背离如所附权利要求所限定的本发明的精神和范围的情况下,在其中可进行各种形式和细节的变化。
Claims (3)
1.一种用于在半导体上形成阱光致抗蚀剂图案的方法,包括以下步骤:
(a)在半导体衬底上形成牺牲氧化物层;
(b)在所述牺牲氧化物层上施加HDMS;
(c)在所述HMDS上施加光致抗蚀剂;
(d)对所述光致抗蚀剂进行软烘烤;
(e)通过对在所述衬底上所传递的光的所述DOF(聚焦深度)进行散焦,将所述光致抗蚀剂曝光;
(f)对所述光致抗蚀剂进行曝光后烘烤;
(g)对所曝光的光致抗蚀剂进行显影以形成阱图案;
(h)对所述阱光致抗蚀剂图案进行硬烘烤。
2.根据权利要求1所述的方法,其中所述对光的DOF的散焦是正(+)散焦。
3.一种具有圆化上边缘的阱光致抗蚀剂图案,其通过权利要求1或权利要求2而形成。
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KR1020050067880A KR100633994B1 (ko) | 2005-07-26 | 2005-07-26 | 반도체 소자의 웰 포토레지스트 패턴 및 그 형성 방법 |
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KR100415091B1 (ko) | 2002-03-26 | 2004-01-13 | 주식회사 하이닉스반도체 | 미세패턴 형성 방법 |
US6777145B2 (en) * | 2002-05-30 | 2004-08-17 | Chartered Semiconductor Manufacturing Ltd. | In-line focus monitor structure and method using top-down SEM |
KR20050070689A (ko) * | 2003-12-30 | 2005-07-07 | 동부아남반도체 주식회사 | 반도체 소자의 이온 주입 방법 |
-
2005
- 2005-07-26 KR KR1020050067880A patent/KR100633994B1/ko not_active IP Right Cessation
-
2006
- 2006-07-25 JP JP2006201876A patent/JP2007036249A/ja active Pending
- 2006-07-25 US US11/493,379 patent/US7488672B2/en not_active Expired - Fee Related
- 2006-07-26 DE DE102006034549A patent/DE102006034549A1/de not_active Withdrawn
- 2006-07-26 CN CN200610099506.8A patent/CN1904739A/zh active Pending
Cited By (7)
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CN101673060B (zh) * | 2008-09-09 | 2011-10-26 | 中芯国际集成电路制造(北京)有限公司 | 一种光刻后注入离子的方法 |
CN101635258B (zh) * | 2009-06-09 | 2012-07-04 | 上海宏力半导体制造有限公司 | 一种防止新鲜高温氧化表面光致抗蚀剂翘曲的方法 |
WO2014008819A1 (zh) * | 2012-07-10 | 2014-01-16 | 无锡华润上华半导体有限公司 | 微机电系统结构及其牺牲层湿法腐蚀方法 |
CN103539064A (zh) * | 2012-07-10 | 2014-01-29 | 无锡华润上华半导体有限公司 | Mems结构的牺牲层湿法腐蚀方法及mems结构 |
CN103539064B (zh) * | 2012-07-10 | 2016-03-02 | 无锡华润上华半导体有限公司 | Mems结构的牺牲层湿法腐蚀方法及mems结构 |
CN107195539A (zh) * | 2017-05-11 | 2017-09-22 | 武汉华星光电技术有限公司 | 改善光阻残膜的方法 |
CN110581069A (zh) * | 2018-06-11 | 2019-12-17 | 爱思开海力士系统集成电路有限公司 | 制造高压半导体器件的方法 |
Also Published As
Publication number | Publication date |
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DE102006034549A1 (de) | 2007-02-22 |
US20070026627A1 (en) | 2007-02-01 |
US7488672B2 (en) | 2009-02-10 |
JP2007036249A (ja) | 2007-02-08 |
KR100633994B1 (ko) | 2006-10-13 |
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