CN1855429A - 用于凹陷沟道阵列晶体管的制造方法和对应的凹陷沟道阵列晶体管 - Google Patents
用于凹陷沟道阵列晶体管的制造方法和对应的凹陷沟道阵列晶体管 Download PDFInfo
- Publication number
- CN1855429A CN1855429A CNA2006100736044A CN200610073604A CN1855429A CN 1855429 A CN1855429 A CN 1855429A CN A2006100736044 A CNA2006100736044 A CN A2006100736044A CN 200610073604 A CN200610073604 A CN 200610073604A CN 1855429 A CN1855429 A CN 1855429A
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- China
- Prior art keywords
- substrate
- groove
- recessed channel
- channel array
- array transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 125000006850 spacer group Chemical group 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract description 2
- 230000003292 diminished effect Effects 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 20
- 150000004767 nitrides Chemical class 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000007943 implant Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66621—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation using etching to form a recess at the gate location
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (14)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/105,580 US7189617B2 (en) | 2005-04-14 | 2005-04-14 | Manufacturing method for a recessed channel array transistor and corresponding recessed channel array transistor |
US11/105,580 | 2005-04-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1855429A true CN1855429A (zh) | 2006-11-01 |
CN100423235C CN100423235C (zh) | 2008-10-01 |
Family
ID=37068054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100736044A Expired - Fee Related CN100423235C (zh) | 2005-04-14 | 2006-04-13 | 凹陷沟道阵列晶体管及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7189617B2 (zh) |
CN (1) | CN100423235C (zh) |
DE (1) | DE102005046133B4 (zh) |
TW (1) | TWI303860B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101587908B (zh) * | 2008-05-23 | 2010-11-17 | 南亚科技股份有限公司 | 凹入式沟道晶体管结构 |
CN102881581A (zh) * | 2011-07-11 | 2013-01-16 | 南亚科技股份有限公司 | 在基底中形成狭缝的方法及刻蚀气体组成 |
CN106024640A (zh) * | 2016-07-28 | 2016-10-12 | 上海集成电路研发中心有限公司 | 一种沟槽栅器件的制作方法 |
WO2022037180A1 (zh) * | 2020-08-21 | 2022-02-24 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7285466B2 (en) * | 2003-08-05 | 2007-10-23 | Samsung Electronics Co., Ltd. | Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channels |
KR100720232B1 (ko) * | 2005-12-30 | 2007-05-23 | 주식회사 하이닉스반도체 | 핀 구조의 반도체 소자의 형성방법 |
KR100816733B1 (ko) * | 2006-06-29 | 2008-03-25 | 주식회사 하이닉스반도체 | 반도체 소자의 리세스 게이트 제조 방법 |
KR100790571B1 (ko) * | 2006-09-29 | 2008-01-02 | 주식회사 하이닉스반도체 | 트랜지스터 및 그 제조방법 |
KR100829599B1 (ko) * | 2006-12-04 | 2008-05-14 | 삼성전자주식회사 | 트랜지스터 및 이를 형성하는 방법 |
US7745876B2 (en) | 2007-02-21 | 2010-06-29 | Samsung Electronics Co., Ltd. | Semiconductor integrated circuit devices including gate patterns having step difference therebetween and a connection line disposed between the gate patterns and methods of fabricating the same |
KR100849192B1 (ko) * | 2007-08-13 | 2008-07-30 | 주식회사 하이닉스반도체 | 반도체 소자 제조 방법 |
JP5538672B2 (ja) * | 2007-10-23 | 2014-07-02 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置及びその製造方法並びにデータ処理システム |
JP5547152B2 (ja) | 2011-09-21 | 2014-07-09 | 株式会社東芝 | 半導体装置 |
KR20130055981A (ko) * | 2011-11-21 | 2013-05-29 | 에스케이하이닉스 주식회사 | 반도체 소자의 제조 방법 |
US9099492B2 (en) * | 2012-03-26 | 2015-08-04 | Globalfoundries Inc. | Methods of forming replacement gate structures with a recessed channel |
JP5715604B2 (ja) * | 2012-09-12 | 2015-05-07 | 株式会社東芝 | 電力用半導体素子 |
CN109074767B (zh) * | 2016-04-28 | 2021-01-12 | 索尼公司 | 显示装置和电子设备 |
US10163900B2 (en) | 2017-02-08 | 2018-12-25 | Globalfoundries Inc. | Integration of vertical field-effect transistors and saddle fin-type field effect transistors |
US10777465B2 (en) | 2018-01-11 | 2020-09-15 | Globalfoundries Inc. | Integration of vertical-transport transistors and planar transistors |
US11450768B2 (en) | 2020-10-05 | 2022-09-20 | Sandisk Technologies Llc | High voltage field effect transistor with vertical current paths and method of making the same |
US11978774B2 (en) | 2020-10-05 | 2024-05-07 | Sandisk Technologies Llc | High voltage field effect transistor with vertical current paths and method of making the same |
CN115101420A (zh) * | 2022-07-15 | 2022-09-23 | 广州粤芯半导体技术有限公司 | 沟槽型功率器件的制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100258364B1 (ko) * | 1997-12-27 | 2000-06-01 | 김영환 | 반도체 소자의 콘택 제조방법 |
JP2004335566A (ja) * | 2003-05-01 | 2004-11-25 | Renesas Technology Corp | 半導体装置の製造方法 |
KR100459872B1 (ko) * | 2003-05-07 | 2004-12-03 | 삼성전자주식회사 | 트렌치 게이트를 갖는 매몰 채널형 트랜지스터 및 그제조방법 |
KR100605099B1 (ko) * | 2003-06-04 | 2006-07-26 | 삼성전자주식회사 | 산화막 형성 방법 및 이를 이용하여 리세스된 게이트를갖는 트랜지스터를 제조하는 방법 |
US7326619B2 (en) * | 2003-08-20 | 2008-02-05 | Samsung Electronics Co., Ltd. | Method of manufacturing integrated circuit device including recessed channel transistor |
-
2005
- 2005-04-14 US US11/105,580 patent/US7189617B2/en not_active Expired - Fee Related
- 2005-09-27 DE DE102005046133A patent/DE102005046133B4/de not_active Expired - Fee Related
-
2006
- 2006-03-17 TW TW095109366A patent/TWI303860B/zh not_active IP Right Cessation
- 2006-04-13 CN CNB2006100736044A patent/CN100423235C/zh not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101587908B (zh) * | 2008-05-23 | 2010-11-17 | 南亚科技股份有限公司 | 凹入式沟道晶体管结构 |
CN102881581A (zh) * | 2011-07-11 | 2013-01-16 | 南亚科技股份有限公司 | 在基底中形成狭缝的方法及刻蚀气体组成 |
US8975137B2 (en) | 2011-07-11 | 2015-03-10 | Nanya Technology Corporation | Process of forming slit in substrate |
CN102881581B (zh) * | 2011-07-11 | 2015-09-16 | 南亚科技股份有限公司 | 在基底中形成狭缝的方法及刻蚀气体组成 |
CN106024640A (zh) * | 2016-07-28 | 2016-10-12 | 上海集成电路研发中心有限公司 | 一种沟槽栅器件的制作方法 |
CN106024640B (zh) * | 2016-07-28 | 2018-10-16 | 上海集成电路研发中心有限公司 | 一种沟槽栅器件的制作方法 |
WO2022037180A1 (zh) * | 2020-08-21 | 2022-02-24 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI303860B (en) | 2008-12-01 |
US7189617B2 (en) | 2007-03-13 |
DE102005046133A1 (de) | 2006-10-26 |
US20060234451A1 (en) | 2006-10-19 |
CN100423235C (zh) | 2008-10-01 |
DE102005046133B4 (de) | 2010-05-06 |
TW200636919A (en) | 2006-10-16 |
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