CN1848425A - 具有材料结合设置的接线元件的功率半导体模块 - Google Patents

具有材料结合设置的接线元件的功率半导体模块 Download PDF

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CN1848425A
CN1848425A CNA200610073508XA CN200610073508A CN1848425A CN 1848425 A CN1848425 A CN 1848425A CN A200610073508X A CNA200610073508X A CN A200610073508XA CN 200610073508 A CN200610073508 A CN 200610073508A CN 1848425 A CN1848425 A CN 1848425A
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power semiconductor
contact
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making surface
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J·施特格
Y·曼茨
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Abstract

描述了一种功率半导体模块,其包括一外壳、向外导引的接线元件、一在外壳内部设置的电绝缘的基片,该基片由一绝缘材料体组成,在其背向底板的第一主平面上有多个彼此电绝缘的金属连接导线。在这些连接导线上,各功率半导体元件和连接元件位于两个连接导线之间和/或连接导线和功率半导体元件之间。所述接线元件和连接元件设计为对接地在连接导线上设置的、具有朝向所述连接导线或朝向功率半导体元件的接触面的金属成形件,其中各个接触面设计为多个的分接触面。每个分接触面具有最大20mm2的面积,每两个分接触面彼此间具有最大5mm的距离。所述分接触面与连接导线或功率半导体元件的连接设计为材料结合的。

Description

具有材料结合设置的接线元件的功率半导体模块
技术领域
本发明涉及一种功率半导体模块,其包括一个具有一底板或用于安装在散热器上的外壳和至少一个在其中设置的电绝缘的基片。该基片本身由一绝缘材料体组成,该绝缘材料体具有多个位于其上面的相互绝缘的金属连接导线和位于其上面的与这些连接导线根据电路相连的功率半导体元件。有利地该基片在其底面具有一相对于连接导线平的金属层。此外,这种类型的功率半导体模块还具有用于外部的负载和辅助接触的接线元件和部分用于在功率半导体模块内部连接的连接元件。对此按照现有技术已知的是,材料结合(stoffbündig)的连接变型方案主要设计为焊接,但也设计为粘接。
背景技术
本发明出发点的功率半导体模块例如由DE 39 37 045 A1或未公开的DE 10 2004 019 568 A1已知。在DE 39 37 045 A1中示出一种形式为半桥式电路装置(Halbbrückenschaltungsanordnung)的功率半导体模块。该功率半导体模块具有平面构成的金属成形体作为用于两个直流接线装置和用于交流接线装置的外部负载接线元件。这些设计为接线带的金属成形体尽可能地彼此紧密相邻地设置在模块内部用于减少寄生电感。通过用于减少寄生电感的带形构造确定,这些接线带具有用于与基片的印制导线接触的多个“基点(Fuβpunkt)”。这些基点彼此间具有与其自身的横向尺寸相比较大的距离。
DE 10 2004 019 568 A1示出功率半导体模块的接线元件的一种类似的构造。在接线元件的基点周围,在基片的电路板上设置多个凹部,以便容纳多余的焊料。在此接线元件的基点设计为所述构成为金属成形件的接线元件的一个平面构成造的部分,其中该平面与基片平行地设置。
按照作为现有技术的文献,这种功率半导体模块的基片设计为绝缘的基片,该基片由一作为基体材料的绝缘材料体组成,并且用于与一个底板或一个散热器的电绝缘。按照现有技术,所述绝缘材料体由一种工业陶瓷例如氧化铝或氮化铝组成。在这个绝缘材料体上,在其背向底板或散热器的第一主平面上有多个彼此电绝缘的金属连接导线。在这些连接导线上设置功率半导体元件。绝缘材料体通常在其面向底板或散热器的第二主平面上也具有一个与第一主平面上的连接导线相同材料、相同厚度的金属层。但通常这个层本身不具有某种结构,因为它例如用于与底板焊接。连接导线以及第二主平面的金属层优选地由按照DCB(直接铜粘合)方式涂覆的铜制成。
为连接上述的印制导线和功率半导体元件,设置按照现有技术设计为金属成形体或引线接合连接件的接线元件。此外,在这些连接导线上,与其材料结合连接地设置同样构成为金属成形体的接线元件,用于功率半导体模块外部的电连接。构成为金属成形体的接线元件和连接元件优选地由铜制成,因为铜具有特别有利的电的特性。此外,这种金属成形体在其表面上还可以具有一个由锡或银组成的层,用于改善焊接性能。
在基片的连接导线和接线元件或连接元件之间的材料结合的连接具有这样的缺点,即这种连接具有机械应力。所述机械应力源于功率半导体模块的温度负载。这种功率半导体模块具有例如-40℃至+90℃之间的工作温度。所述接线元件和连接元件的热膨胀系数由使用的材料在这里优选铜确定。与此相对,基片的热膨胀系数主要由绝缘材料体确定。由于功率半导体模块的热负载和与接线元件和连接元件的热膨胀系数相比明显较小的基片的热膨胀系数,在基片和接线元件之间的连接位置上产生机械应力。
此外,例如从文献DE 35 05 086 A1、DE 44 46 527 A1和DE 101 03084 A1中,也已知材料结合设置的接线元件或连接元件。但上述文献没有在本发明意义上贡献关于这种接线元件和连接元件的构造进一步的知识。它们只是示出接线元件的延伸和基点的不同构造。
发明内容
本发明的目的在于,介绍在接线元件和/或连接元件和基片的连接导线和/或功率半导体元件之间的一种材料结合的连接,其中接线元件以及连接元件适合于连接导线以及功率半导体元件设置,在这种材料结合的连接中有效地减小机械应力。
按本发明,该目的通过权利要求1的特征的措施实现。优选的实施方式在从属权利要求中描述。
本发明的构思以一种带有一个底板或用于直接在一个散热器上安装的功率半导体模块为出发点。该功率半导体模块具有至少以下的元件:一个外壳,用于负载和辅助接线装置的接线元件,一具有印制导线的基片,一功率半导体模块和一连接元件。
用于负载和辅助接触的接线元件从外壳中导引,并且用于电连接在外壳内部设置的组件。设计与底板或散热器电绝缘的基片本身由一绝缘材料体优选由一种工业陶瓷组成,在其上面,在其背向底板或散热器的第一主平面上有多个彼此电绝缘的金属连接导线。在这些连接导线上设置功率半导体元件,它们根据电路与连接导线和/或其它功率半导体元件和/或接线元件相连。其它内部的接线元件相互连接至少两个连接导线或与功率半导体元件连接。
这些接线元件和连接元件的至少一个设计为具有至少一个与一连接导线的接触面的金属成形体,并与该连接导线对接地设置。所述至少一个接触面设计为多个的分接触面,其中每个分接触面具有最大20mm2的面积,每两个分接触面彼此间具有最大5mm的距离。此外,分接触面与连接导线和/或功率半导体元件的连接设计为材料结合的。
在上述接线元件和连接元件的构造中有利的是,机械应力分配到两个分平面上,并且由此提高在功率半导体模块受热负载时的抗疲劳强度。特别是在使用通常比含铅的焊料具有更小的延展性的无铅焊料时,在接线元件或连接元件和连接导线之间的按本发明的连接具有较小的机械应力和高的抗疲劳强度。
附图说明
本发明的构思借助于图1至4的实施例更详细地说明。
图1示出一个具有对接设置的接线元件的功率半导体模块;
图2示出具有按照现有技术的接线元件和连接元件的基片;
图3示出一种具有按本发明的接线元件和连接元件的基片;
图4示出接线元件和连接元件的特别的构造。
具体实施方式
图1示出一个具有对接设置的接线元件的功率半导体模块10。以侧视图示出一电路板100和一功率半导体模块10的设置,其中相互间隔微小距离地示出电路板100和功率半导体模块10。功率半导体模块10自身具有一个底板20。在其上面设置框形的外壳30以及两个基片50。每个基片50包括一个绝缘材料体54以及设置在两个主平面上的金属迭片(Kaschierungen)。面向底板20的金属迭片53设计为平的并且不具有某种结构。与此相对,面向功率半导体模块的迭片本身具有某种结构,并且由此构成基片的印制导线54。
在这些印制导线54上设置功率半导体元件56。电的接线元件构成电力接线装置40和辅助接线装置60。所述压力接触的辅助接线装置60设计为接触弹簧,并需要加压以便在基片50的印制导线54和电路板100的配属的印制导线120之间可靠的电的触点接通。
电力接线装置的接线元件40由金属成形件构成,该金属成形件在其一端上与基片50的配属的印制导线54以焊接的方式对接相连,在其另一端上具有一用于螺纹连接的空隙。
整体构成一个框架和一个盖的外壳30具有成形部,用于定位和固定电力接线装置40和辅助接线装置60。电力接线装置分别固定在外壳的成形部里。
电路板100在其面向功率半导体模块的一侧上具有印制导线120。这些印制导线构成接触弹簧的触点,并且由此用于连接基片50的印制导线54。
用于连接到直流中间电路和负载上的电力接线装置40的其它接线连接在这里设计为电缆连接220。
图2a示出一具有按照现有技术的接线元件40和连接元件70的基片50。这里示出基片50的绝缘材料体52以及在其上面构成的印制导线54。在所述印制导线54中的两个上面分别设置一个功率半导体元件56。所述功率半导体元件56中的其中一个示范性地借助引线接合连接件(Drahtbondverbindungen)72与一个相邻的印制导线54相连。
在该印制导线54上设置一个按照现有技术的接线元件40。该接线元件40设计为金属成形件,并且具有一个与基片50平行的部分42,该部分构成与基片50及其连接导线54的接触面420。该部分材料结合地借助一未明确示出的焊接连接与印制导线54相连。一个连接元件70相互连接两个印制导线54。该连接元件70同样设计为金属成形件,在朝向印制导线54的连接位置、接触面720上同样分别具有一个与基片50平行的配属的部分72。在同样类型的实施方式中,在一个印制导线54和一个功率半导体元件之间的连接元件70长期以来已经公知,这里示出的是借助一引线接合连接件80的可选择的变型。
图2b示出基本上与图2a相同的设置和相同的组件。与图2a不同,接线元件40和连接元件70在这里不具有与基片50平行的部分。在这里,接线元件40和连接元件70借助其接触面400、700对接地焊接到连接导线54上。
图3示出具有按本发明的接线元件40和连接元件70的基片50。主要的构件如基片50和功率半导体元件56与图2a中的那些相同。与图2b不同,接线元件40和连接元件70在这里按本发明进一步构成。接线元件40同样对接地焊接到连接导线54上。但接线元件40和连接导线54之间的接触面不设计为一个连续的平面,而是两个分平面。
为此,接线元件40的金属成形件具有一个凹槽44。该凹槽44从金属成形件面向基片50的平面出发,三角形地从第一主平面404延伸至第二主平面406。在此每个分平面402的面积小于20mm2,分平面402彼此之间的距离在1mm和5mm之间。在印制导线54和接线元件40之间材料结合的连接设计为焊接连接,其中焊料延伸到凹槽44中,并且由此几乎完全地或完全地填充该凹槽。
也以相同的方式构成连接元件70。其中接触面同样具有一成两个分接触面702的划分(Aufteilung),连同各一个三角形的凹槽74。
图4举例示出接线元件40和连接元件70部分的特别构造。图4a示出按照图3的凹槽44a的构造,但在这里窄的棱边额外地倒角。此外,在这里示出单个的分接触面402、702的俯视图及其彼此间的距离(1mm≤z≤5mm)。
图4b示出接线元件40和连接元件70的凹槽44a、74a的一种缝隙形的构造。其中该缝隙设计为垂直地从接触面出发。这种类型的缝隙44a、74a在焊接时有利地用焊料不完全地填充。与接触面间隔距离地,金属成形件还具有另外两个正交于第一缝隙设置的缝隙作为收缩部46、76,用于平衡扭力。
图4c示出具有按照图4a的两个凹槽44a、74a的接线元件40和连接元件的一种构造。多个这种类型的凹槽44a、74a进一步减少机械应力。但分平面最小4mm2的面积同样是有利的。还示出各个接触面402、702的俯视图及其彼此间的距离(1mm≤z≤5mm)。
图4b示出按照图4a的接线元件40和连接元件70,但其在间隔接触面规定的距离上具有两个互相重叠的彼此间隔距离的缝隙,这些缝隙在这里构成两个收缩部48、78,用于释放应力。

Claims (7)

1.一种具有一个底板(20)或用于直接在散热器上安装的功率半导体模块(10),至少包括一个外壳(30)、向外导引的用于外部负载接触的接线元件(40)、至少一个在外壳(30)内部设置的电绝缘的基片(50),该基片本身由一绝缘材料体(54)组成,在其背向底板(20)或散热器的第一主平面上有多个彼此电绝缘的金属连接导线(52),在这些连接导线上,功率半导体元件(56)和连接元件(70)位于两个连接导线(54)之间和/或在连接导线(54)和功率半导体元件(56)之间,其中至少一个接线元件(40)和/或连接元件(70)设计为一对接地在连接导线(54)上设置的金属成形件、该金属成形件具有与所述连接导线(54)和/或功率半导体元件(56)的接触面,其中所述接触面设计为多个分接触面(402、702),其中每个分接触面(402、702)具有最大20mm2的面积,每两个分接触面(402、702)彼此间具有最大5mm的距离,并且其中分接触面(402、702)与连接导线(54)和/或功率半导体元件(56)的连接设计为材料结合的。
2.按权利要求1所述的功率半导体模块(10),其特征在于,所述接线元件(40)和/或连接元件(70)设计为具有锡或银表面的铜制金属成形件。
3.按权利要求1所述的功率半导体模块(10),其特征在于,所述分接触面(402、702)彼此间具有1mm到5mm的距离。
4.按权利要求3所述的功率半导体模块(10),其特征在于,接线元件(40)和/或连接元件(70)在各分接触面(402、702)之间具有凹槽(44a),这些凹槽设计为与接触面上的基底成三角形。
5.按权利要求3所述的功率半导体模块(10),其特征在于,接线元件(40)和/或连接元件(70)在分接触面(402、702)之间具有凹槽(44b),这些凹槽设计为垂直地从接触面出发的缝隙。
6.按权利要求1所述的功率半导体模块(10),其特征在于,接线元件(40)和/或连接元件(70)在其延伸中紧邻于接触面具有收缩部(46、48、76、78)。
7.按权利要求6所述的功率半导体模块(10),其特征在于,接线元件(40)和/或连接元件(70)具有收缩部,使得两个彼此间隔微小距离设置的收缩部(46、48、76、78)造成应力释放。
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