CN1771596A - 密封的功率半导体组件 - Google Patents

密封的功率半导体组件 Download PDF

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CN1771596A
CN1771596A CNA2004800094747A CN200480009474A CN1771596A CN 1771596 A CN1771596 A CN 1771596A CN A2004800094747 A CNA2004800094747 A CN A2004800094747A CN 200480009474 A CN200480009474 A CN 200480009474A CN 1771596 A CN1771596 A CN 1771596A
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power semiconductor
semiconductor assembly
substrate
island
chip
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A·林德曼
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IXYS Semiconductor GmbH
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IXYS Semiconductor GmbH
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Abstract

本发明涉及一种密封的功率半导体组件，包括由绝缘材料(陶瓷)构成的衬底，所述衬底具有由热传导材料，具体地说由金属层的部分表面构成的多个岛(14、17、18、19)。在所述岛上焊接功率半导体芯片(22)。以在其它岛上的焊盘(20、24)的形式或者以配置为印刷导体的引线(28)和岛(14)的形式，产生从所述芯片连接至所述连接部件(10和12)的电连接。密封所述衬底和所述芯片，而所述连接部件(10和12)从所述密封件伸出，并且为了固定在热沉上，露出所述衬底的所述金属下侧。

Description

密封的功率半导体组件
技术领域
本发明涉及一种密封的功率半导体组件，其中密封了多个功率半导体芯片。
背景技术
在由电池提供电压的系统中，尤其在电动机生产中越来越多地使用功率半导体。在12V到80V的电压下，经常产生对功率开关有相当高要求的大电流的需要。在现有技术的情况下，密封的半导体芯片用于转换大电流。如在例如DE 26 36 450 C2和US 4 507 675中所述，公知利用导体结构同时密封多个芯片的方法。然后再次分离各具有一个芯片的分立的功率半导体组件。
由于功率半导体组件的结构，经常限定从外壳伸出的连接部件至芯片的馈电电缆的尺寸，以致馈电电缆呈现不希望的高阻抗，导致热效应。此外，导致过电压效应的寄生电感也经常发生。
在WO 00/07238中说明了仅具有一个芯片的密封功率半导体组件。这里，将芯片施加到在其顶部和底部用铜覆盖的陶瓷衬底。这样的陶瓷衬底也称为直接键合铜衬底。它们具有优点是，一方面芯片与冷却部件电绝缘，另一方面将热量散发到冷却部件中。
从EP 0063070 A1公知结合多个功率半导体芯片的方法。这里，将没有电连接的两个芯片施加到具有良好热传导的平板上，并且连接至连接部件。通过该平板将热量散发到底板上。
还公知在金属梳上设置更多个组件的方法，除了一个冷却表面外，将该金属梳嵌入到塑料中(BBC BROWN BOVERI，Power semiconductors，Dr.Heimo Burl，Mannheim 1982)。然后再次分离分立的组件。当以低成本大批量生产较小的组件时采用这种嵌入技术。
从DE 697 10 885 T2公知具有在部分表面上金属化的扁平氧化铝载体的二极管组件。在金属化层上安装该二极管。在对着二极管的载体侧设置接触表面，该接触表面通过穿透载体的连接部件电连接至二极管。
De 196 35 582 C1说明了具有表面可安装外壳的功率半导体组件，该外壳密封了施加于金属平板的芯片。
发明内容
本发明的目标是提供一种改进了性能的功率半导体组件，其可以低成本制造，并且具有多个芯片，具体地说，更有效地将热量散发到冷却部件，其中产生更小的过电压和更小的寄生电感效应，并且其中所述芯片可至少部分相互电连接。
利用权利要求1的特征实现了该目标。
本发明有利的实施例构成了从属权利要求的目标。
由于芯片置于热传导的岛上，优选地在多个岛上，具体地说，各分立的芯片置于独立的岛上，所以来自芯片的热量没有传递到封闭的导体层，而仅仅传递到绝缘的即独立的区域。然后热量从该区域直接传递到绝缘体衬底，并从该衬底向下释放。例如，热量可传递到在衬底底部上设置的且没有密封即保持暴露的金属层上，以使热量可以释放到冷却部件上。然后将电连接加热至较低的程度或者几乎不加热。
热和电传导材料优选地是金属，具体地说，以薄层形式的金属。
具有和不具有芯片的岛的设置使得电连接最优。电连接可包括焊接连接、(焊接)引线连接或者甚至通过岛的连接。在优化连接部件的布局中，可考虑寄生电感，例如通过设置传导主电流的连接部件互相靠近。为了确保不对邻近的连接部件施加过高的电压，优选设计岛使得至少存在这样的总倾向：将具有显示低电势差(电压)的电势的连接部件设置为比具有显示高电势差的电势的连接部件相互更靠近。连接部件可以设置在密封件的两侧，具体地说相对侧，并且从密封件伸出。它们是扁平导体连接，可以在密封件的里面或外面弯曲。导体连接不必都具有同样的尺寸，也不必相互之间设置同样的距离。例如，在密封件的一侧它们可以比另一侧更窄，并与其最近的连接呈现更短的距离。在密封件一侧较宽的导体连接也可以比在密封件另一侧窄的连接具有更少的数量。密封件中导体连接的下面可以设置槽缝或凹口以容纳绝缘体，例如塑料膜，使得如果衬底的金属化底部与热沉之间存在接触，则导体连接与热沉分离以避免电短路。
在本发明中利用金属化的陶瓷衬底，例如直接键合铜衬底或直接键合铝衬底，其中所述陶瓷材料可包括氧化铝和/或氮化铝。所述芯片可以焊接到所述金属岛上。
可以利用多种不同的芯片，例如MOSFET、二极管、IGBT和/或晶闸管芯片，该多种不同芯片可在其相互作用下，例如形成分立的开关、斩波器、相移器、H桥或三相桥，或者这些部件的结合。
附图说明
下面参考附图说明了本发明的优选实施例，其中：
图1以平面图示出了根据本发明的部分功率半导体组件的示意性内视图；
图2以平面图示出了根据本发明的功率半导体组件；
图3以底视图示出了功率组件；
图4以截面且放大表示示出了功率半导体组件的截面；以及
图5示出了用于本发明的实施例的六个功率半导体芯片的结合的布线图。
具体实施方式
图1示出了功率半导体组件图，其中在图的底部可以看到三个连接部件10，并且在图相对的顶部可以看到八个连接部件12，该部件12比连接部件10明显地更窄且更相互靠近。由热和电传导绝缘材料构成的岛位于由陶瓷绝缘材料构成的衬底的顶部。这些岛由金属层形成，并通过利用蚀刻产生的凹槽16分隔。该金属层岛用作电连接，并且用于固定连接部件10与功率半导体芯片22。
上面的连接部件12各自机械和电连接至衬底上面边缘的相邻岛17，而下面的连接部件10电和机械连接至设计为带状线的岛14。功率半导体芯片22焊接到在衬底中心区域中的岛21上。此外，在两个带状线14之间设置稍小的金属层岛19，该岛用于在带状线14上为半导体芯片至连接部件的电连接焊接引线。例如，示出的是从芯片22引至岛19的焊接引线20。然后另一条焊接引线24连接至连接部件12，该连接部件12再连接至岛。第三条焊接引线26通过带状线14从芯片22馈电至连接部件12。此外，通过多个相邻的引线28将芯片连接至导体区域14。同样地形成其它芯片的电连接。将正负电流连接设置为相互紧邻以降低电感，并且电流导通的带状线没有形成导体回路。
金属层是铜层，其施加到较薄的陶瓷衬底上，该陶瓷衬底约0.38毫米厚，优选地小于1.0毫米。对用于电动机制造的电压，即不太高的电压来说，这足够作为绝缘体。在陶瓷衬底的背面也用铜覆盖。因此采用直接键合铜衬底。
图2以平面图示出了根据本发明的功率半导体组件。通过压在陶瓷衬底周围的塑料单片密封件30密封功率半导体芯片。对专家来说公知这种嵌入技术。该密封件遍布衬底的整个顶部，且在衬底的底部接合。连接部件10、12以扁平导体连接的形式从密封件30伸出。
从下面如图3所示的相同功率半导体组件的视图中可以看出，密封件没有完全密封衬底，而是露出下面的金属层32，并且被密封件的窄外围边缘38包围。功率半导体组件由此可容易地连接至热沉。密封件在窄外围边缘处缩减，形成肩37，以使当半导体组件靠在具有下面的金属层的冷却部件上时形成窄间隙(图4)。插入导体连接下面的扁平绝缘体可以延伸进该间隙。该绝缘体，例如小塑料板，用于防止导体连接与冷却部件之间的短路，并且也增大电压阻抗。
根据本发明不同的芯片可以与功率半导体组件理想地互连。例如，图5示出了作为三相桥的六个部件连接。各部件包括具有栅极连接G1、G2、G3、G4、G5和G6以及源极连接S1、S2、S3、S4、S5和S6的MOSFET34，以及二极管36，该二极管36可以是MOSFET的部分，或者也可以是独立的肖特基二极管形式。这里没有示出的其它连接可以形成H桥或相移器。

Claims (14)

1.一种密封的功率半导体组件，包括：
陶瓷绝缘材料的衬底，具有至少一个由热和电传导材料构成的岛(14、17、18、19)；
至少两个设置于所述岛上的功率半导体芯片(22)；
从所述芯片至连接部件(10、12)的电连接(20、24、26、28、14)，其中至少两个连接部件电连接至所述岛，
其特征在于，
设置压制塑料材料的密封件(30)，所述密封件(30)完全包围所述功率半导体芯片(22)，并至少部分包围所述衬底，其中将所述连接部件(10、12)设计为从所述密封件伸出的扁平导体连接，并且特征在于在与所述岛相对的一侧上所述衬底呈现金属覆层(32)。
2.根据权利要求1的功率半导体组件，其特征在于，所述岛(14、17、18、19)包括独立的部分金属层表面。
3.根据权利要求1或2的功率半导体组件，其特征在于，所述衬底是陶瓷衬底，所述陶瓷衬底包括，具体地说，氧化铝或氮化铝陶瓷材料。
4.根据权利要求1至3中一项的功率半导体组件，其特征在于，在所述岛相对的一侧，所述衬底的所述金属覆层(32)至少部分露出。
5.根据权利要求1至4中一项的功率半导体组件，其特征在于，所述衬底是直接键合铜或直接键合铝的衬底。
6.根据权利要求1至5中一项的功率半导体组件，其特征在于，所述电连接包括焊接连接。
7.根据权利要求1至6中一项的功率半导体组件，其特征在于，所述电连接包括引线连接(20、24、26、28)和/或通过所述岛的连接(14)。
8.根据前述权利要求的一项的功率半导体组件，其特征在于，所述连接部件(10、12)位于所述密封件的不同的两侧。
9.根据前述权利要求的一项的功率半导体组件，其特征在于，将所述连接部件(10、12)设置并连接至所述芯片，以使传导主电流的所述连接部件设置为相互靠近。
10.根据前述权利要求的一项的功率半导体组件，其特征在于，将所述连接部件(10、12)设置并连接至所述芯片，以使具有高相互电势差的电势的两个连接部件设置为比具有低相互电势差的电势的两个连接部件相互之间更远。
11.根据前述权利要求的一项的功率半导体组件，其特征在于，通过焊接连接的方式将所述芯片(22)固定到金属岛。
12.根据前述权利要求的一项的功率半导体组件，其特征在于，在所述密封件(30)的底部上形成至少一个肩(37)，以插入扁平绝缘体。
13.根据前述权利要求的一项的功率半导体组件，其特征在于，所述芯片包括MOSFET、二极管、IGBT和/或晶闸管芯片。
14.根据前述权利要求的一项的功率半导体组件，其特征在于，当相互作用时，所述芯片形成分立的开关、斩波器、桥接旁路、H桥或三相桥(图4)，或者这些部件的结合。
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