CN107078126A - 半导体模块以及半导体模块用的导电构件 - Google Patents

半导体模块以及半导体模块用的导电构件 Download PDF

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Publication number
CN107078126A
CN107078126A CN201480082980.2A CN201480082980A CN107078126A CN 107078126 A CN107078126 A CN 107078126A CN 201480082980 A CN201480082980 A CN 201480082980A CN 107078126 A CN107078126 A CN 107078126A
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conductive member
semiconductor module
long side
electrode
side direction
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CN201480082980.2A
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CN107078126B (zh
Inventor
谷昌和
出口善行
阪田树
阪田一树
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

本发明的半导体模块具备导电构件，该导电构件的长边方向的一端与搭载在绝缘基板上的半导体元件的电极相接合，长边方向的另一端与不同于电极的元器件相接合，导电构件由金属板构成，一端和另一端具有弯曲部，设置于一端的弯曲部在前端部分的长边方向上具有裂缝，不存在裂缝的端部接合部与半导体元件的电极相接合。其结果是，能实现兼顾了电流容量的增大和可靠性提高的半导体模块。

Description

半导体模块以及半导体模块用的导电构件
技术领域
本发明涉及用于同时实现电流容量的增大以及可靠性提高的半导体模块以及半导体模块用的导电构件。
背景技术
由对电流进行开关控制的IGBT或MOS-FET构成的半导体模块是逆变器、充电器等功率转换装置的主要构成部件。在推进车辆的电动化的过程中，要求功率转换装置的高输出化，且半导体模块的电流容量有增大的趋势。
并且，随着SiC等半导体元件的进步，半导体元件能在200℃附近的高温环境下工作，冷热循环中的结构可靠性与以往相比变得非常严格。因此，要求半导体模块兼顾高输出化带来的电流容量增大以及能在高温环境下长期正常工作的可靠性确保。
为了实现大电流容量化，需要降低通电构件的电阻值。并且，为了在从低温到高温的环境中确保可靠性，必须降低半导体模块内部的构成构件的接合部上的冷热应力以及该接合部上的残留应力。
并且，在以往的半导体模块中，为了增大电流容量，有时使导电构件与半导体元件的电极直接接合(例如参照专利文献1)。
现有技术文献
专利文献
专利文献1：日本专利特开2005－5593号公报
发明内容
发明所要解决的技术问题
然而，现有技术存在如下问题。
该专利文献1所公开的现有的半导体模块根据电流容量而使用了铜材。然而，若将这种铜材用于大输出，则大多数情况下截面积会增大，刚性会变大。
并且，专利文献1的布线结构中，半导体元件的电极与导电构件的热膨胀差较大。因此，会在上述接合面上产生应变，并产生冷热应力。其结果，会产生在半导体元件的电极与导电构件的接合面上产生剥离、裂缝这样的问题。
此外，无法吸收半导体模块中的构成构件的尺寸公差，会在半导体元件的电极与导体构件的接合面上产生残留应力。该残留应力成为上述剥离、裂缝问题的原因，从而产生与可靠性有关的问题。
另外，专利文献1所公开的现有的半导体模块的高频分量的电阻值较高，大电流容量化存在限制。
本发明是为了解决上述问题而完成的，其目的在于获得一种能同时实现电流容量的增大以及可靠性提高的半导体模块以及半导体模块用的导电构件。
解决技术问题所采用的技术方案
本发明所涉及的半导体模块包括导电构件，该导电构件的长边方向的一端与搭载在绝缘基板上的半导体元件的电极相接合，长边方向的另一端与不同于电极的元器件相接合，导电构件由金属板构成，一端与另一端具有弯曲部，设置于一端的弯曲部在前端部分的长边方向上具有裂缝，不存在裂缝的端部接合部与半导体元件的电极相接合。
此外，对于本发明所涉及的半导体模块用的导电构件，该导电构件应用于半导体模块，其长边方向的一端与搭载在半导体模块内的绝缘基板上的半导体元件的电极相接合，长边方向的另一端与不同于电极的元器件相接合，其特征在于，由金属板构成，一端与另一端具有弯曲部，设置于一端的弯曲部在前端部分的长边方向上具有裂缝，不存在裂缝的端部接合部与半导体元件的电极相接合。
发明效果
根据本发明，作为与半导体元件的电极直接连接的布线材料，采用在长边方向的两端部具有弯曲部并在与电极相接合的弯曲部上形成有裂缝的导电构件，来构成半导体模块。其结果是，能获得能同时实现电流容量的增大以及可靠性提高的半导体模块以及半导体模块用的导电构件。
附图说明
图1是本发明实施方式1的半导体模块的立体图。
图2是本发明实施方式2的半导体模块的剖视图。
具体实施方式
下面，利用附图对本发明的半导体模块以及半导体模块用的导电构件的实施方式进行说明。
实施方式1.
图1是本发明实施方式1的半导体模块的立体图。本实施方式1的半导体模块1包括绝缘基板10、配置在绝缘基板10的电极11上的半导体元件20、以及连接配置在绝缘基板10上的端子12与半导体元件20的电极21的导电构件30。
这里，导电构件30构成为铜、铝等导电率较高的金属板。另外，图1中举例示出了使用三个导电构件30的情况。由此，能通过增大导电构件30的数量来实现电气布线部的大电流容量化。因此，能根据电流容量来恰当地设定导电构件30的数量。
另外，在仅使用一个导电构件30的情况下，也能同时实现电流容量的增大和可靠性提高。这里，优选使用至少两个以上的导电构件30来构成电流值较大的主电路。
此外，作为接合方法，当然可以采用超声波接合、焊接、金属粒子烧结接合、以及利用导电粘接剂的接合，也可以采用其它接合方法。
本实施方式1中，用于构成主电路的导电构件30例如使用了厚度为0.64mm这样的厚度较薄的铜板。并且，如图1所示，在由该铜板构成的导电构件30的长边方向的前端部的两处设有弯曲部31a、31b。
并且，上述弯曲部31a、31b各自的前端部分沿长边方向形成有裂缝32a、32b，并且形成有裂缝32a的弯曲部31a的前端与半导体元件20的电极21相接合。此外，形成有裂缝32b的弯曲部31b的前端与配置在绝缘基板10上的端子12相接合。
由于导电构件30由厚度较薄的金属板构成，因此刚性较低，且由于沿长边方向形成有裂缝32a、32b，因此具有柔性。其结果是，本实施方式1的导电构件30能根据绝缘基板10的热膨胀而变形。
此外，半导体元件20的电极21与导电构件30的接合部的面积与现有结构的没有裂缝的情况相比变得更小。因此，接合部上的应变变小。其结果是，能抑制导电构件30与半导体元件20的电极21的接合面33a上的应变，从而能抑制冷热应力的产生。关于配置在绝缘基板10上的端子12与导电构件30的接合面33b，由于也具有裂缝32b，因此能获得同样的效果。
此外，试制以各种形状形成了裂缝32a、32b的导电构件30并收集数据，其结果是，发现通过在导电构件30的端部设置裂缝32a、32b，使得具有长方形的接合部上的对角长度在10mm以下，从而能获得理想的应变降低效果。
在对导电构件30的弯曲部31a的前端与半导体元件20的电极21进行焊接的情况下，若在前端部的裂缝32a中填入焊料，则会丧失柔性，并降低可靠性。为此，在因形成裂缝32a而露出的部分涂布抗蚀剂，防止裂缝32a被焊料填满，从而能保持柔性。关于裂缝32b，也能通过涂布抗蚀剂来获得与裂缝32a同样的效果。
并且，如图1所例示，即使在半导体元件20的电极21与配置在绝缘基板10上的端子12在高度方向上存在阶差的情况下，由于导电构件30具有柔性，因此能吸收阶差的尺寸公差。其结果是，能消除接合面33a以及接合面33b上的残留应力。
此外，如图1所例示，在不超过弯曲部31a、31b的高度的范围内设置裂缝32a、32b的高度(长边方向的长度)的情况下，接合面33a、33b在面内方向上具有柔性，与热应力有关的可靠性得以提高。
另一方面，虽然没有图示，但在不超过弯曲部31a、31b的高度的范围内设置裂缝32a、32b的高度的情况下，面内方向上的柔性当然会增加，但垂直方向上的柔性也会增加。其结果是，能吸收阶差的尺寸公差，并有效地提高针对残留应力的可靠性。
此外，在导电构件30的表面附近会因趋附效应而有高频电流流过。因此，高频分量的电阻有变高的趋势。与此相对，本实施方式1中，通过将导电构件30构成为较薄的金属板，从而与以往的导电构件相比，能增大表面积。其结果是，高频分量的电阻得以降低，接合面33a、33b上的温度降低，因此有助于提高可靠性。
如上所述，根据实施方式1，使导电率较高的金属板弯曲，并使在弯曲后的前端部分形成有裂缝的导电构件与半导体元件的电极相连接。其结果是，能获得如下效果。
(效果1)电流的大容量化
通过采用导电率较高的金属板作为导电构件，能实现大电流容量化。此外，根据需要来增加导电构件的数量，从而能进一步实现大电流容量化。
(效果2)可靠性提高
通过采用金属板作为导电构件，使得导电构件的刚性降低，能使其具有柔性。此外，通过形成裂缝，从而能减小半导体元件的电极部上的接合面积。其结果是，因导电构件与半导体元件的电极的线膨胀差引起的接合部上的应变得以降低，提高了对于热应力的可靠性。此外，也能降低因半导体模块的尺寸公差而产生的残留应力。并且，通过使用金属板作为导电构件，能增大表面积，并降低高频分量的电阻，从而能抑制趋附效应。其结果是，能抑制温度上升，有助于提高可靠性。
因此，根据实施方式1，能应用具有柔性的、接合部的接触面积较小且增大了表面积的导电构件，能实现电气布线部的大电流容量化，并能防止冷热应力引起的接合部的剥离，实现半导体模块的可靠性的提高。
实施方式2.
在之前的实施方式1中，对一端与半导体元件20相连接的本发明所涉及的导电构件30的另一端与配置在相同半导体模块内的绝缘基板10上的端子12相连接的情况进行了说明。与此相对，本实施方式2中，对一端与半导体元件20相连接的本发明所涉及的导电构件30的另一端与构成了其它电路的电子元器件相连接的情况下的端子结构进行说明。
图2是本发明实施方式2的半导体模块的剖视图。与之前实施方式1的图1的结构相比，图2的结构中，由于导电构件30的另一端与外部的电子元器件相连接，因此导电构件30的另一端的端子结构不同。因此，以下以该不同的结构为重点进行说明。
如图2所示，本实施方式2的导电构件30具有使用螺钉41与从构成其它电路的电子元器件引出的外部导电构件40相连接的结构。通过采用这种结构，能吸收外部导电构件40的尺寸偏差。其结果是，能将具备本发明所涉及的导电构件30的半导体模块应用于与其它电子元器件的连接，并能提高与其它电子元器件的接合部上的可靠性。

Claims (10)

1.一种半导体模块，包括导电构件，该导电构件的长边方向的一端与搭载在绝缘基板上的半导体元件的电极相接合，所述长边方向的另一端与不同于所述电极的元器件相接合，其特征在于，
所述导电构件由金属板构成，所述一端与所述另一端具有弯曲部，
设置于所述一端的所述弯曲部在前端部分的所述长边方向上具有裂缝，不存在所述裂缝的端部接合部与所述半导体元件的电极相接合。
2.如权利要求1所述的半导体模块，其特征在于，
所述导电构件设置有所述裂缝，使得具有长方形的所述端部接合部的对角长度在10mm以下。
3.如权利要求1或2所述的半导体模块，其特征在于，
所述导电构件构成为两个以上的单独构件，并与所述半导体元件的所述电极单独接合。
4.如权利要求1至3的任一项所述的半导体模块，其特征在于，
所述导电构件的所述另一端与从构成其它电路的电子元器件引出的外部导电构件相连接。
5.如权利要求1至4的任一项所述的半导体模块，其特征在于，
形成在所述导电构件上的所述裂缝的所述长边方向的长度设置在超过设置于所述一端的所述弯曲部的所述长边方向的长度的范围内。
6.如权利要求1至4的任一项所述的半导体模块，其特征在于，
形成在所述导电构件上的所述裂缝的所述长边方向的长度设置在不超过设置于所述一端的所述弯曲部的所述长边方向的长度的范围内。
7.如权利要求1至6的任一项所述的半导体模块，其特征在于，
所述导电构件的因形成在所述一端的所述弯曲部上的所述裂缝而露出的部分涂布有抗蚀剂。
8.如权利要求1至7的任一项所述的半导体模块，其特征在于，
所述导电构件构成为铜或铝的金属板。
9.如权利要求1至8的任一项所述的半导体模块，其特征在于，
所述导电构件使用焊接、金属粒子烧结接合、利用导电性粘接剂的接合、以及超声波接合的任一种来与所述半导体元件的电极相结合。
10.一种半导体模块用的导电构件，
该导电构件应用于半导体模块，其长边方向的一端与搭载在所述半导体模块内的绝缘基板上的半导体元件的电极相接合，所述长边方向的另一端与不同于所述电极的元器件相接合，其特征在于，
由金属板构成，所述一端与所述另一端具有弯曲部，
设置于所述一端的所述弯曲部在前端部分的所述长边方向上具有裂缝，不存在所述裂缝的端部接合部与所述半导体元件的电极相接合。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110400755A (zh) * 2018-04-24 2019-11-01 财团法人工业技术研究院 半导体封装结构

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7150461B2 (ja) * 2018-04-24 2022-10-11 ローム株式会社 半導体装置
JP7435415B2 (ja) * 2020-11-16 2024-02-21 三菱電機株式会社 半導体装置及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS447544Y1 (zh) * 1966-04-23 1969-03-22
JPH01218092A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 印刷配線基板の製造方法
JP2002043508A (ja) * 2000-07-25 2002-02-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
CN1848425A (zh) * 2005-04-12 2006-10-18 塞米克朗电子有限及两合公司 具有材料结合设置的接线元件的功率半导体模块
US20090212405A1 (en) * 2008-02-26 2009-08-27 Yong Liu Stacked die molded leadless package
US20130105985A1 (en) * 2011-11-01 2013-05-02 Junji Tsuruoka Semiconductor device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705848A (en) * 1995-11-24 1998-01-06 Asea Brown Boveri Ag Power semiconductor module having a plurality of submodules
JP4164409B2 (ja) 2003-06-13 2008-10-15 三菱電機株式会社 半導体パワーモジュール
JP2005142189A (ja) * 2003-11-04 2005-06-02 Toyota Industries Corp 半導体装置
JP4038173B2 (ja) * 2003-12-18 2008-01-23 三菱電機株式会社 電力用半導体装置
JP4485995B2 (ja) * 2005-06-10 2010-06-23 三菱電機株式会社 パワー半導体モジュール
US8680658B2 (en) * 2008-05-30 2014-03-25 Alpha And Omega Semiconductor Incorporated Conductive clip for semiconductor device package
JP6033215B2 (ja) * 2011-03-29 2016-11-30 ローム株式会社 パワーモジュール半導体装置
JP5935672B2 (ja) * 2012-01-31 2016-06-15 アイシン・エィ・ダブリュ株式会社 スイッチング素子ユニット
US8823175B2 (en) * 2012-05-15 2014-09-02 Infineon Technologies Ag Reliable area joints for power semiconductors
JP6304974B2 (ja) * 2013-08-27 2018-04-04 三菱電機株式会社 半導体装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS447544Y1 (zh) * 1966-04-23 1969-03-22
JPH01218092A (ja) * 1988-02-26 1989-08-31 Toshiba Corp 印刷配線基板の製造方法
JP2002043508A (ja) * 2000-07-25 2002-02-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
CN1848425A (zh) * 2005-04-12 2006-10-18 塞米克朗电子有限及两合公司 具有材料结合设置的接线元件的功率半导体模块
US20090212405A1 (en) * 2008-02-26 2009-08-27 Yong Liu Stacked die molded leadless package
US20130105985A1 (en) * 2011-11-01 2013-05-02 Junji Tsuruoka Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110400755A (zh) * 2018-04-24 2019-11-01 财团法人工业技术研究院 半导体封装结构
CN110400755B (zh) * 2018-04-24 2022-02-01 财团法人工业技术研究院 半导体封装结构

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