CN101540313B - 具有接合连接的电路装置 - Google Patents

具有接合连接的电路装置 Download PDF

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CN101540313B
CN101540313B CN2009100043468A CN200910004346A CN101540313B CN 101540313 B CN101540313 B CN 101540313B CN 2009100043468 A CN2009100043468 A CN 2009100043468A CN 200910004346 A CN200910004346 A CN 200910004346A CN 101540313 B CN101540313 B CN 101540313B
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power semiconductor
printed conductor
joint face
substrate
load
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CN101540313A (zh
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M·莱德雷尔
N·瓦伦塔
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Abstract

本发明涉及一种电路装置，具有包括印制导线的衬底、至少一个第一功率半导体部件和相应的接合连接。在此第一功率半导体部件具有相同极性的第一负载连接面和第二负载连接面。该接合连接本身具有奇数N个接合线，其中N-1个接合线的第一半从衬底的第一印制导线延伸到第一负载连接面，该N-1个接合线的第二半从该第一印制导线延伸到第二负载连接面。此外第N个从第一印制导线出发的连接线在第一负载连接面和第二负载连接面上都具有至少一个接合脚。

Description

具有接合连接的电路装置
技术领域
本发明描述了一种电路装置，具有衬底(Substrate)、设置在衬底上的印制导线(Leiterbahnen)以及设置在至少一个印制导线上的至少一个功率半导体部件(Leistungshalbleiterbauelement)。各自的功率半导体部件借助基本上早已公知的接合连接(Bondverbindung)而与第一印制导线导电地连接。这种类型的电路装置优选用于功率半导体模块(Leistungshalbleitermodulen)。
背景技术
已知多种衬底变形方案，优选具有绝缘的基体，例如作为AMB(活性金属钎焊：active metal braze)衬底、DCB(直接键合铜：direct copper bonding)衬底或IMS(绝缘金属衬底：insulated metalsubstrate)衬底。在这些衬底的第二印制导线上，优选以材料一体(stoffschluessig)和导电的方式设置功率半导体部件。
功率半导体部件与其它印制导线、例如第一印制导线的其它电接触通常借助于接合连接实现，其中接合连接具有多个单独的接合线(Bonddraehte)来用于连接负载。
由于功率半导体部件的进一步发展，其侧向延展减小，并且因此在载流能力(Stromtragfaehigkeit)不变的情况下，功率半导体部件的面积减小。例如具有相同极性的两个负载连接面的功率半导体部件是已知的，相同极性的负载连接面例如是功率晶体管的发射极连接面(Emitteranschlussflaechen)。其中，对于功率半导体部件的负荷，有利的是为两个发射极连接面均匀地施加电流。
借助于接合连接实现的电连接的载流能力通过单个接合线的直径以及接合线的数量来确定。因此，在从衬底的印制导线到功率晶体管的负载连接面的接合连接中接合线的数量为奇数可能是必要的以及有意义的。
在很多应用中，功率二极管(Leistungsdioden)的负载连接面还借助于相同的接合连接与功率晶体管的负载连接面连接。其中，功率二极管的负载连接面的大小可能限制每个接合连接中接合线的数量。
发明内容
本发明要解决的技术问题在于提供一种电路装置，该电路装置使得能够在接合连接中接合线的数量为奇数的情况下为功率半导体部件的相同极性的两个负载连接面均匀地施加电流。
按照本发明，该技术问题通过具有权利要求1所述特征的电路装置解决。优选的实施方式在从属权利要求中描述。
根据本发明的电路装置的出发点是优选为上述类型的衬底。该衬底具有多个印制导线，其中在第二印制导线上设置至少一个第一功率半导体部件。该至少一个功率半导体部件借助于所分配的接合连接而与第一印制导线导电地连接。
各自的第一功率半导体部件具有相同极性的第一和第二负载连接面。电路装置的接合连接具有奇数N个接合线，其中N-1个接合线中一半的接合线从衬底的第一印制导线延伸到第一负载连接面。这N-1个接合线中另一半的接合线从该第一印制导线延伸到第二负载连接面。根据本发明，第N个从第一印制导线出发的连接线在第一负载连接面以及第二负载连接面上都具有至少一个接合脚(Bondfuss)，并且因此与两个负载连接面导电地连接。
通过该结构，可以均匀地为两个负载连接面施加电流，并且因此均匀地为整个功率半导体部件施加电流。为了即使在运行于功率半导体部件的功率极限时也获得功率半导体部件的完全效率，这是必要的。
附图说明
该电路装置的特别优选的扩展方式在对实施例的相应描述中提到。另外，借助于图1至图3的实施例进一步解释本发明的方案。
图1示出了根据本发明的第一电路装置。
图2示出根据本发明的电路装置的功率半导体部件的接合连接的接合线的设置。
图3示出根据本发明的第二电路装置。
具体实施方式
图1示出根据本发明的第一电路装置，其被构造为多个功率开关(Leistungsschalter)的并联电路，该并联电路例如是功率半导体模块的一部分。该电路装置在此由上述衬底2中之一制成，例如具有陶瓷绝缘材料体20和设置在该陶瓷绝缘材料体上的金属印制导线22、24、26的DCB衬底。第一印制导线22在此例如传导交流电势，第二印制导线24传导正极性的直流电势，第三印制导线26传导控制电位。
在第二印制导线24上并与该第二印制导线导电连接地设置并联连接的第一功率半导体部件4，在此是场效应功率晶体管(Feldeffekt-Leistungstransistor)。该功率晶体管4在其背向(abgewandt)衬底2的侧上具有两个相同极性的负载连接面40、42，以及控制连接面46。各自的控制连接面46借助引线接合连接(Drahtbondverbindung)56而与衬底的相应第三印制导线26导电连接。
衬底2的第一印制导线22和各自功率晶体管4的负载连接面40、42之间的导电连接同样分别借助接合连接5进行。该接合连接5在此具有奇数5个接合线50、52、54，因为这对于该连接的载流能力来说足够了。这5个接合线中4个接合线的一半52延伸到功率晶体管4的第一负载连接面40，并在该第一负载连接面上对于每个接合线各具有两个接合脚500、502。这5个接合线中4个接合线的另一半52延伸到功率晶体管4的第二负载连接面42，并在该第二负载连接面上同样对于每个接合线具有两个接合脚520、522。
根据本发明，第5个接合线54从第一印制导线22延伸到功率晶体管4的第一负载连接面40，并在该第一负载连接面上具有接合脚504。此外，第五接合线54延伸到第二负载连接面42，并在该第二负载连接面上也具有接合脚524。因此，衬底2的第一印制导线22与功率晶体管4的接合连接5具有5个接合线50、52、54，并且对于每个负载连接面40、42分别具有5个接合脚。由此，可以在功率晶体管的两个相同极性的负载连接面40、42上均匀分布地为该功率晶体管4施加电流。
图2示出根据本发明的电路装置的功率半导体部件4的接合连接5的接合线50、52、54的布置，其中功率半导体部件在此是IGBT功率晶体管。示出了具有两个相同极性的负载连接面40、42(在此是发射极接头)以及控制连接面46(在此是栅极接头)的功率晶体管4。如优选的那样，这两个负载连接面在此具有相同的面积。
该功率晶体管4的仅部分示出的接合连接5(参见图3)具有奇数个(在此是5个)接合线50、52、54。第一和第二接合线50被分配给第一负载连接面40，并在该负载连接面40上分别具有两个接合脚500、502。第三和第四接合线52被分配给第二负载连接面42，并在该负载连接面42上也分别具有两个接合脚520、522。
根据本发明，接合连接5的第五接合线54具有与第一负载连接面40连接的接合脚504和与第二负载连接面连接的接合脚524。因此，在总共5个接合线50、52、54以及在两个负载连接面40、42上总共有10个接合脚500、502、504、520、522、524的情况下，保证了对于每个负载连接面40、42而言，电流施加是均匀的。因此，可以在运行时均匀地为功率晶体管4施加电流。
图3示出根据本发明的第二电路装置，同样是多个功率开关的并联电路，第二电路装置在此由功率晶体管4和反向并联(antiparallel)连接的功率二极管7构成。其中，很明显，第二功率半导体部件可能限制接合连接的接合线数量。在此，在衬底2的第二印制导线24上，各显示一个IGBT功率晶体管4(参见图2)和分配给该IGBT功率晶体管的功率二极管7。相互对应的功率半导体部件4、7的负载连接面40、42、70借助接合连接5而相互地导电连接并与衬底2的第一印制导线22导电连接。
其中，出于经济原因，选择对于必要的载流能力而言面积最小的功率半导体部件4、7。在所示出的例子中，出于制造接合连接的工艺原因，只能在二极管7的负载连接面70上最多并排设置5个接合线50、52、54。在各自接合线50、52、54的延伸方向上，该接合线具有与二极管7连接的两个接合脚570。对于每个接合连接5设置更少数量的连接线50、52、54同样是不可能的，因为这会将接合连接5的载流能力减小1/5，因此可能无法充分利用功率半导体部件4、7的效率并由此无法充分利用电路装置的效率。
通过将各自的接合连接5限制到5个接合线50、52、54，在该接合连接5的进一步延伸中需要为IGBT功率晶体管4均匀地施加电流，这通过按照本发明构造第五接合线54的布置来实现。该第五接合线与IGBT功率晶体管4的第一负载连接面40以及IGBT功率晶体管4的第二负载连接面42分别具有接合脚504、524。其余的4个接合线50、52已知与分配给这些接合线的相同极性的负载连接面40、42分别具有两个接合线500、502、520、522。

Claims (5)

1.一种电路装置，具有包括印制导线(22，24，26)的衬底(2)、至少一个第一功率半导体部件(4)以及相应的接合连接(5)，其中所述第一功率半导体部件(4)具有相同极性的第一负载连接面(40)和第二负载连接面(42)，所述接合连接(5)具有奇数N个接合线(50，52，54)，其中N-1个接合线中一半的接合线(50)从所述衬底(2)的第一印制导线(22)延伸到所述第一负载连接面(40)，这N-1个接合线中另一半接合线(52)从该第一印制导线(22)延伸到所述第二负载连接面(42)，从所述第一印制导线(22)出发的第N个接合线(54)在所述第一负载连接面(40)和所述第二负载连接面(42)上都具有至少一个接合脚(504，524)。
2.根据权利要求1所述的电路装置，其中所述第一功率半导体部件(4)是功率晶体管。
3.根据权利要求1所述的电路装置，其中所述衬底(2)是具有多个设置在表面上的印制导线(22，24，26)的绝缘衬底，所述至少一个第一功率半导体部件(4)以材料一体和导电的方式与所述衬底上的第二印制导线(24)连接。
4.根据权利要求1所述的电路装置，其中所述接合连接(5)将所述第一印制导线(22)分别与所述第一功率半导体部件(4)和第二功率半导体部件(7)连接。
5.根据权利要求4所述的电路装置，其中所述第二功率半导体部件(7)是功率二极管。
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