CN1830086B - 复合式层压芯片元件 - Google Patents
复合式层压芯片元件 Download PDFInfo
- Publication number
- CN1830086B CN1830086B CN2004800217963A CN200480021796A CN1830086B CN 1830086 B CN1830086 B CN 1830086B CN 2004800217963 A CN2004800217963 A CN 2004800217963A CN 200480021796 A CN200480021796 A CN 200480021796A CN 1830086 B CN1830086 B CN 1830086B
- Authority
- CN
- China
- Prior art keywords
- aforementioned
- conductive pattern
- pattern layer
- circuit board
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000008878 coupling Effects 0.000 claims description 158
- 238000010168 coupling process Methods 0.000 claims description 158
- 238000005859 coupling reaction Methods 0.000 claims description 158
- 238000003475 lamination Methods 0.000 claims description 108
- 230000001939 inductive effect Effects 0.000 claims description 97
- 239000003990 capacitor Substances 0.000 claims description 47
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 9
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 598
- 238000000034 method Methods 0.000 description 42
- 238000004519 manufacturing process Methods 0.000 description 33
- 238000005245 sintering Methods 0.000 description 23
- 238000010586 diagram Methods 0.000 description 19
- 238000003825 pressing Methods 0.000 description 18
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 16
- 238000007639 printing Methods 0.000 description 16
- 229910052763 palladium Inorganic materials 0.000 description 14
- 229910052697 platinum Inorganic materials 0.000 description 14
- 229910052709 silver Inorganic materials 0.000 description 14
- 238000003780 insertion Methods 0.000 description 13
- 230000037431 insertion Effects 0.000 description 13
- 239000010944 silver (metal) Substances 0.000 description 13
- 238000005304 joining Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 9
- 239000003292 glue Substances 0.000 description 9
- 238000004080 punching Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000007769 metal material Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 229910000859 α-Fe Inorganic materials 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
Abstract
Description
Claims (13)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030052562 | 2003-07-30 | ||
KR1020030052562A KR100470116B1 (ko) | 2003-07-30 | 2003-07-30 | 복합 적층 칩 소자 |
KR1020030052561 | 2003-07-30 | ||
KR10-2003-0052562 | 2003-07-30 | ||
KR1020030052561A KR100470115B1 (ko) | 2003-07-30 | 2003-07-30 | 다양한 등가인덕턴스 값을 갖는 적층 칩 소자 |
KR10-2003-0052561 | 2003-07-30 | ||
PCT/KR2004/001759 WO2005013367A1 (en) | 2003-07-30 | 2004-07-15 | Complex laminated chip element |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101809357A Division CN101447336B (zh) | 2003-07-30 | 2004-07-15 | 复合式层压芯片元件 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1830086A CN1830086A (zh) | 2006-09-06 |
CN1830086B true CN1830086B (zh) | 2010-06-30 |
Family
ID=36947570
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101809357A Expired - Fee Related CN101447336B (zh) | 2003-07-30 | 2004-07-15 | 复合式层压芯片元件 |
CN2004800217963A Expired - Fee Related CN1830086B (zh) | 2003-07-30 | 2004-07-15 | 复合式层压芯片元件 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101809357A Expired - Fee Related CN101447336B (zh) | 2003-07-30 | 2004-07-15 | 复合式层压芯片元件 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100470115B1 (zh) |
CN (2) | CN101447336B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4715371B2 (ja) | 2005-07-29 | 2011-07-06 | Tdk株式会社 | サージ吸収素子及びサージ吸収回路 |
JP4434121B2 (ja) | 2005-09-30 | 2010-03-17 | Tdk株式会社 | コネクタ |
KR100733816B1 (ko) | 2005-10-28 | 2007-07-02 | 주식회사 아모텍 | 적층형 칩소자 |
CN103050761A (zh) * | 2011-10-14 | 2013-04-17 | 钰铠科技股份有限公司 | 积层式平衡非平衡转换器制程 |
JP7288288B2 (ja) * | 2017-05-02 | 2023-06-07 | 太陽誘電株式会社 | 磁気結合型コイル部品 |
CN110085127B (zh) * | 2019-05-23 | 2021-01-26 | 云谷(固安)科技有限公司 | 柔性显示母板及柔性显示屏制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5197170A (en) * | 1989-11-18 | 1993-03-30 | Murata Manufacturing Co., Ltd. | Method of producing an LC composite part and an LC network part |
US5495387A (en) * | 1991-08-09 | 1996-02-27 | Murata Manufacturing Co., Ltd. | RC array |
US5977845A (en) * | 1996-10-14 | 1999-11-02 | Mitsubishi Materials Corporation | LC composite part with no adverse magnetic field in the capacitor |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3118966B2 (ja) * | 1992-07-08 | 2000-12-18 | 株式会社村田製作所 | 積層型チップバリスタ |
JP3097332B2 (ja) * | 1992-07-21 | 2000-10-10 | 株式会社村田製作所 | 積層型チップバリスタ |
JPH07235406A (ja) * | 1994-02-25 | 1995-09-05 | Mitsubishi Materials Corp | チップ容量性バリスタ |
JP2001035750A (ja) * | 1999-07-19 | 2001-02-09 | Matsushita Electric Ind Co Ltd | 複合電子部品 |
-
2003
- 2003-07-30 KR KR1020030052561A patent/KR100470115B1/ko active IP Right Grant
-
2004
- 2004-07-15 CN CN2008101809357A patent/CN101447336B/zh not_active Expired - Fee Related
- 2004-07-15 CN CN2004800217963A patent/CN1830086B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5197170A (en) * | 1989-11-18 | 1993-03-30 | Murata Manufacturing Co., Ltd. | Method of producing an LC composite part and an LC network part |
US5495387A (en) * | 1991-08-09 | 1996-02-27 | Murata Manufacturing Co., Ltd. | RC array |
US5977845A (en) * | 1996-10-14 | 1999-11-02 | Mitsubishi Materials Corporation | LC composite part with no adverse magnetic field in the capacitor |
Non-Patent Citations (3)
Title |
---|
JP平3-151605A 1991.06.27 |
JP特开平7-66043A 1995.03.10 |
同上. |
Also Published As
Publication number | Publication date |
---|---|
KR100470115B1 (ko) | 2005-02-04 |
CN101447336A (zh) | 2009-06-03 |
CN1830086A (zh) | 2006-09-06 |
CN101447336B (zh) | 2011-04-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CI02 | Correction of invention patent application |
Correction item: Priority Correct: 2003.07.30 KR 10-2003-0052562 False: Lack of priority second Number: 36 Page: The title page Volume: 22 |
|
COR | Change of bibliographic data |
Free format text: CORRECT: PRIORITY; FROM: MISSING THE SECOND ARTICLE OF PRIORITY TO: 2003.7.30 KR 10-2003-0052562 |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Free format text: FORMER OWNER: PU YINJI HUANG SHUNXIA JIN DEXI |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: GYEONGGI-DO, SOUTH KOREA TO: 769-12, DANWON-GU, ANSAN-SI, GYEONGGI-DO, SOUTH KOREA |
|
TR01 | Transfer of patent right |
Effective date of registration: 20110708 Address after: Republic of Korea Gyeonggi Do Ansan danwon Yuan Dong 769-12 Patentee after: Innochips Technology Co., Ltd. Address before: Gyeonggi Do, South Korea Co-patentee before: Pu Yinji Patentee before: Innochips Technology Co., Ltd. Co-patentee before: Huang Shunxia Co-patentee before: Jin Dexi |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100630 Termination date: 20210715 |
|
CF01 | Termination of patent right due to non-payment of annual fee |