CN1809788B - 旋涂、可光致图案形成的层间介电材料的应用以及使用这种材料的中间半导体器件结构 - Google Patents
旋涂、可光致图案形成的层间介电材料的应用以及使用这种材料的中间半导体器件结构 Download PDFInfo
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- CN1809788B CN1809788B CN2004800169885A CN200480016988A CN1809788B CN 1809788 B CN1809788 B CN 1809788B CN 2004800169885 A CN2004800169885 A CN 2004800169885A CN 200480016988 A CN200480016988 A CN 200480016988A CN 1809788 B CN1809788 B CN 1809788B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 83
- 239000003989 dielectric material Substances 0.000 title description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 98
- 239000000463 material Substances 0.000 claims abstract description 89
- 230000005855 radiation Effects 0.000 claims abstract description 73
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 60
- 238000000576 coating method Methods 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 13
- 238000013461 design Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 9
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 230000002520 cambial effect Effects 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- -1 poly-silylene compound Chemical class 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 4
- 229920001709 polysilazane Polymers 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000000059 patterning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 157
- 230000008569 process Effects 0.000 description 25
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 7
- 238000010276 construction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000006552 photochemical reaction Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 102100022717 Atypical chemokine receptor 1 Human genes 0.000 description 3
- 101000678879 Homo sapiens Atypical chemokine receptor 1 Proteins 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 229910018557 Si O Inorganic materials 0.000 description 3
- 229910007991 Si-N Inorganic materials 0.000 description 3
- 229910006294 Si—N Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 241001597008 Nomeidae Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012940 design transfer Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- ZPSJGADGUYYRKE-UHFFFAOYSA-N 2H-pyran-2-one Chemical compound O=C1C=CC=CO1 ZPSJGADGUYYRKE-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 238000007539 photo-oxidation reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005619 polysilyne Polymers 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02134—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising hydrogen silsesquioxane, e.g. HSQ
-
- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02137—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material comprising alkyl silsesquioxane, e.g. MSQ
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
一种使得可光致图案形成的旋涂材料能够在此前不能使用的波长下用于形成半导体器件结构的罩层。所述可光致图案形成的旋涂材料以层的形式施涂在半导体基片上。在可光致图案形成的层上形成罩层和光刻胶层。罩层吸收或反射辐射,保护可光致图案形成的层不受使光刻胶层形成图案时所用的第一波长的辐射。所述可光致图案形成的旋涂材料当暴露于第二波长的辐射之下时可以转化为二氧化硅基材料。
Description
技术领域
本发明涉及半导体处理技术,更具体地涉及在另外(additional)波长辐射下使用旋涂(spin-on)、可光致图案形成的(photopatternable)层间介电材料。
背景
在制造计算机芯片和集成电路之类的半导体器件时,使用光刻胶(photoresist)层制造微型电子元件。在制造过程中,通常在半导体基片上施涂薄光刻胶层。然后对光刻胶层进行烘烤以蒸发光刻胶中的溶剂,并将光刻胶固定在半导体基片上。通过掩模使部分光刻胶层暴露于可见光、紫外(“UV”)光、电子束(“EB”)或X射线辐射能之下,从而在光刻胶层上形成图案。辐射在光刻胶层暴露于辐射之下的部分中引起了光化学反应,改变了这些部分的溶解度。光刻胶层未曝光部分的溶解度未发生变化。用显影剂溶液处理半导体基片,所选的显影剂溶液能够溶解并除去光刻胶层暴露于辐射的部分。由于除去光刻胶层的曝光部分,在光刻胶层上形成所需的图案。通过湿蚀刻或干蚀刻法之类的常规技术将图案转移到半导体器件底层上。一旦将图案转移到半导体器件的底层上之后,便除去光刻胶层的剩余部分。
随着对半导体器件的存储器要求的增加,半导体器件中电子元件的尺寸减小。为了减小尺寸,开发出了对短波长辐射敏感的新型光刻胶材料,这是由于短波长能够在半导体器件上提供更好的部件分辨率。在本文中,术语“短波长”表示大约为100-300纳米的波长。通常在需要亚半微米几何结构的情况下使用对该波长范围敏感的光刻胶材料。例如,目前正在使用对248纳米敏感的光刻胶材料,而对193纳米敏感的光刻胶材料正在研制当中。
旋涂、可光致图案形成的层间介电(“ILD”)材料是本领域已知的,可购自Clariant International有限公司(Muttenz,Switzerland)之类的来源。这些ILD材料是当暴露于辐射之下时能够转化为二氧化硅型陶瓷膜的光刻胶材料。如Nagahara等在EP 1239332中所述,将包含聚硅氮烷(“PSZ”)化合物和光致生酸剂(“PAG”)的光刻胶组合物施涂在半导体芯片上形成光刻胶层。使光刻胶层通过掩模暴露于例如360-430纳米的辐射之类的UV辐射或EB辐射之下。在光刻胶层被曝光的或未被掩盖的部分,辐射引发了光化学反应,由PAG生成了质子。这些质子是由光化学反应生成的酸所产生的。在光刻胶层未曝光或未被掩盖的部分不发生反应,因此在光刻胶层的这些部分不生成质子。这些质子与空气中的氧气(“O2”)和/或水(“H2O”)反应,使PSZ中的Si-N键发生断裂。然后,H2O与断裂的PSZ反应生成包含Si-O键的甲基硅倍半氧烷(methylsilsesquioxane)(“MSQ”)。由于仅在光刻胶层的曝光部分生成质子,光刻胶层所选的部分转化为二氧化硅型陶瓷膜。用四甲基氢氧化铵(“TMAH”)选择性地除去二氧化硅型陶瓷膜,留下光刻胶层的未曝光部分,从而在半导体基片上形成所需的图案。然后使余下的部分暴露于360-430纳米的辐射之下,将光刻胶层转化为二氧化硅型陶瓷膜。这种二氧化硅型陶瓷膜具有低介电常数,良好的绝缘性能、耐热、耐磨、耐腐蚀,被用于半导体器件、液晶显示器和印刷电路基片中形成ILD。
Howard在美国专利第6350706号中揭示了其它的可以通过暴露于辐射之下而转化为绝缘材料的光刻胶材料。通过暴露于深紫外(“DUV”)辐射之下,将等离子体聚合的甲基硅烷选择性地转化为绝缘材料——光氧化的硅氧烷。通过将光刻胶材料的曝光部分转化为绝缘材料,形成了半导体器件结构。通过将光刻胶材料转化为绝缘材料,形成了永久性结构,这些光刻胶材料不需通过蚀刻法除去。
这些光刻胶材料的一个缺点是它们对单一的波长或窄范围的波长敏感。换句话说,PSZ向二氧化硅型陶瓷膜的转化在这一个或多个波长(通常为360-430纳米)下最有效。在这些波长下,不可能有高的分辨率,例如目前正在开发和使用的193纳米或243纳米光刻胶所达到的分辨率。然而,后者的这些波长(193纳米或243纳米)无法有效地将PSZ转化为二氧化硅型陶瓷膜。因此,当主要用短波长达到所需分辨率的情况下,这些光刻胶或ILD材料的前端应用受到很大的限制。另外,不能同时使图案形成过程和转化过程达到最佳,由此,使用者必须在完成这些过程中的每一个之间进行选择或折衷。
最好能够在另外的波长下、尤其是短波长下使用ILD材料,使得ILD材料的应用范围更广。还最好能够在对图案形成过程和转化过程最佳的条件下进行这些过程,而不需在达到最佳的图案形成和最佳转化之间折衷。
发明内容
本发明包括形成中间(intermediate)半导体器件结构的方法。该方法包括提供半导体基片,在半导体基片上形成可光致图案形成的层(photopatternablelayer)。所述可光致图案形成的层可包含有机硅光刻胶材料,这种材料配制成在暴露于辐射中时,能够选择性地转化为硅倍半氧烷材料之类的二氧化硅基材料。可在可光致图案形成的层上形成罩(cap)层和光刻胶层。罩层可包含吸收或反射辐射的材料,例如介电增透涂层(“DARC”)、底增透涂层(“BARC”)或金属涂层。罩层可包含无定形或金刚石型的碳。当光刻胶层暴露于第一波长的辐射之下(用来在光刻胶层中产生高分辨率图案)时,罩层保护可光致图案形成层不受第一波长的影响。然而,也可随后通过光刻法和蚀刻技术将高分辨率图案转移到可光致图案形成的层上。可通过使可光致图案形成层的暴露部分暴露于第二波长的辐射之下之下,将曝光部分选择性地转化为二氧化硅基材料。
本发明还包括中间半导体器件结构。该中间半导体器件结构可包括半导体基片和形成于该半导体基片上的可光致图案形成的层。所述可光致图案形成的层可包含有机硅烷光刻胶材料,该材料被配制成当暴露于辐射时能够选择性地转化为二氧化硅基材料。可在至少部分可光致图案形成的层之上用能够吸收或反射辐射的材料形成罩层。可在至少部分罩层之上形成光刻胶层。光刻胶层可对大约100-500纳米的波长敏感,该波长可以在光刻胶层和罩层中形成高分辨率的图案。罩层保护可光致图案形成的层,使其不受该辐射照射。然后可通过光刻法和蚀刻技术将此高分辨率图案转移到可光致图案形成的层中。通过暴露于不同波长辐射之下,可将可光致图案形成的层的曝光部分选择性地转化为二氧化硅基材料。
附图简述
尽管本说明书的后面被认为是包括特别指明并明确要求的权利要求书,但是通过结合以下附图阅读本发明的以下描述,可以更容易确定本发明的优点,在附图中:
图1A-1G显示根据本发明的半导体器件结构的工艺顺序;
图2A-2H显示根据本发明的半导体器件结构的工艺顺序,该工艺顺序制得具有自对准(self-aligned)接触的实施方式。
本发明最佳实施方式
揭示了可用于其它波长辐射的可光致图案形成、旋涂材料。将此可光致图案形成的旋涂材料以层的形式施用在半导体基片上,并在其上覆盖能够吸收或反射辐射的罩层。罩层阻挡进入可光致图案形成的层中的辐射,从而保护可光致图案形成的层使其免受辐射。
本文所述的方法和结构并不能形成制造半导体器件的完整工艺流程。该工艺流程余下的步骤是本领域普通技术人员已知的。因此,仅描述本发明需要理解的工艺步骤和结构。
如图1A所示,可以在半导体基片2上形成可光致图案形成的层4,所述半导体基片包括半导体芯片或包括半导体材料层的其它基片。在本文中,术语“半导体基片”包括硅芯片、绝缘体上硅薄膜(“SOI”)、蓝宝石上硅薄膜(“SOS”)、在基本半导体基底(base semiconductor foundation)上的硅和其它半导体材料,例如硅-锗、锗、砷化镓和磷化铟的外延层。
所述可光致图案形成层4可由配制成能够在暴露于辐射之下时选择性转化为二氧化硅(“SiO2”)基材料的材料形成。所述SiO2基材料可包括SiO2及其衍生物,例如烷基化物或其它改性的衍生物。所述可光致图案形成层4的材料可包括有机硅光刻胶材料,例如硅聚合物、聚亚甲硅基化合物(polysilyne)或PSZ化合物,本领域普通技术人员可根据所需的可光致图案形成层4的性质对该材料进行选择。在本文中,术语“聚硅氮烷”或PSZ表示具有多个Si-N重复单元的低聚物、环状、多环、线型聚合物或树脂状聚合物。在一实施方式中,有机硅光刻胶材料是常规的PSZ化合物。所述可光致图案形成层4可包含单独的有机硅光刻胶材料或有机硅光刻胶材料的混合物。例如,如果使用PSZ化合物,该PSZ化合物可为单独的PSZ化合物、多种PSZ化合物的混合物或PSZ共聚物。PSZ可具有线型、环状或交联的结构。可通过任意已知的方法合成本领域已知的PSZ化合物,例如Nakahara等在美国专利第5905130号中所揭示的方法。
可光致图案形成层4的材料能够选择性转化成的SiO2基材料是一种具有Si-O键的硅倍半氧烷(silesesquioxane)材料(“SSQ”)。本领域已知的SSQ材料包括但不限于氢硅倍半氧烷(“HSQ”)、甲基硅倍半氧烷(“MSQ”)、多氢硅倍半氧烷(“pHSQ”)、氢聚硅倍半氧烷(“H-PSSQ”)、甲基聚硅倍半氧烷(“M-PSSQ”)和苯基聚硅倍半氧烷(“P-PSSQ”)。在一实施方式中,SiO2基材料为MSQ。
可光致图案形成层4可包含PAG,用来引发将可光致图案形成层4的有机硅光刻胶材料选择性转化为SiO2基材料的光化学反应。PAG可为三嗪、噁唑、噁二唑、噻唑、取代的2-吡喃酮、砜化合物、磺酸酯化合物或鎓盐化合物(例如重氮鎓盐、碘鎓盐或硫鎓盐)、卤化物或酯。在一实施方式中,可光致图案形成层4包含PSZ化合物和PAG。
可通过常规涂布方法在半导体基片2上形成可光致图案形成层4,所述常规涂布技术包括但不限于浸涂、刮涂、旋涂、辊涂、喷涂和流涂。用来沉积可光致图案形成层4的涂布技术可取决于可光致图案形成层4中所用的材料。在一实施方式中,将可光致图案形成层4旋涂在半导体基片2上。可光致图案形成层4可形成大约0.05微米-4微米的厚度。
如图1B所示,可在可光致图案形成层4上形成罩层6。罩层6通过阻挡射入可光致图案形成层4中的辐射来防止PAG活化。罩层6可由高吸收光或高反射光材料制成,这些材料包括但不限于DARC、BARC和金属涂层。这些涂层可以是常规的无机或有机涂层。例如,罩层6可包括但不限于无定形碳(“α-碳”)、碳化硅、氮化钛(“TiN”)、氮化硅(“SiN”)和氮氧化硅(“SiON”)。可通过常规沉积技术沉积罩层6。例如,无机或金属涂层可通过CVD(“化学气相沉积”)、真空沉积或溅射来沉积。有机涂层可通过旋涂来沉积。
罩层6应形成足够的厚度以防辐射射入可光致图案形成层4。然而,罩层6的厚度要受到随后的半导体器件结构处理中对罩层6的蚀刻能力的限制。例如,如果罩层6过厚,便不能根据需要蚀刻罩层6。仅为了举例,罩层6的厚度可超过大约10纳米(100埃)。如果罩层6由α-碳形成,其厚度可约为1000-2000如果罩层6由SiON形成,其厚度应约小于400如果罩层6由BARC形成,其厚度可大于大约300-3000
如图1C所示,可在罩层6上形成光刻胶层8。光刻胶层8可由能够形成高分辨率图案的常规光刻胶材料形成。例如,光刻胶层8可由对短波长,例如大约100-500纳米的波长敏感的光刻胶材料形成。例如,光刻胶材料可对193纳米或248纳米的波长敏感。
可以用常规的光刻法和蚀刻法在光刻胶8和罩层6中形成所需的图案。可通过掩模(未显示)使部分光刻胶层8暴露于第一波长10的辐射之下之下。第一波长10的辐射可以是UV辐射、DUV辐射或X射线辐射。当存在罩层6时,第一波长10辐射不射入可光致图案形成层4。相反地,罩层6可吸收或反射第一波长10,保护可光致图案形成层4以防其发生不希望有的曝光。因此,可使包括罩层6的中间半导体器件结构暴露于作为第一波长10的任何波长的辐射之下。换言之,中间半导体器件结构可暴露于任何波长的辐射之下,例如使光刻胶层8形成图案最有效的波长,不限于对引发PAG最有效的波长。在一实施方式中,第一波长的范围约为100-300纳米。
光刻胶层8的曝光部分可使用常规显影剂溶液除去,例如以下化合物的水溶液:TMAH、胆碱、硅酸钠、氢氧化钠或氢氧化钾。还预期可使用本领域普通技术人员能够选择的不同显影剂溶液除去光刻胶层8的未曝光部分,而非除去曝光部分。如图1D所示,光刻胶层8的图案可延伸通过罩层6,从而使部分的可光致图案形成层4的一部分暴露。由于在光刻胶层8中使用高分辨率光刻胶,转移到可光致图案形成层4的图案也会具有高分辨率。
如图1E所示,在用罩层6和光刻胶层8覆盖部分的可光致图案形成层4的(未曝光于第一波长的辐射的部分)的情况下,可以使中间半导体器件结构暴露于第二波长14的辐射之下之下。第二波长14可以是足以活化可光致图案形成层4曝光部分的PAG、引发光化学反应的波长。例如,第二波长14可以是最有效活化PAG的波长或波长范围。第二波长14的辐射可以是UV辐射、DUV辐射或X射线辐射。活化的PAG生成质子(或酸),这些质子(或酸)与可光致图案形成层4的有机硅光刻胶材料反应。光化学反应通过使在可光致图案形成层4的曝光部分中的Si-N键断裂、形成Si-O键,将可光致图案形成层4的曝光部分转化为SiO2基部分12。由于PAG仅在曝光部分被活化,光化学反应仅在这些部分进行,使得可光致图案形成层4选择性转化为SiO2基部分12。
由于罩层6覆盖了部分的可光致图案形成层4,中间半导体器件结构可在任何波长的辐射下形成图案,而且该辐射不会影响可光致图案形成层4下面的未暴露部分。然而,可以随后将可光致图案形成层4的暴露部分选择性地转化为SiO2基部分12。因此,可以在对图案形成和转化过程最优化的波长下进行这些过程,而不需要在完成高分辨率图案和将可光致图案形成层4有效转化为SiO2基部分12之间进行折衷。
如图1F所示,可通过常规的湿蚀刻或干蚀刻法将光刻胶8和罩层6从中间半导体器件结构上除去。也可通过蚀刻方法除去光刻胶层8和罩层6,该蚀刻法同时除去两层而不蚀刻可光致图案形成层4。例如,如果罩层6由α-碳形成,可以用氧等离子体同时除去罩层6和光刻胶层8。也可通过多个蚀刻处理分别除去罩层6和光刻胶层8。
如图1G所示,通过暴露在适当波长的辐射之下,可以将可光致图案形成层4剩余的部分转化为SiO2基部分12’。如果需要,随后也可通过常规的技术,例如在约高于200℃的温度下在氧气中灰化(ashing),然后在氧气中退火,或者通过蒸汽退火将SiO2基部分12’转化为SiO2。
还预期在进行了所需的光刻法和蚀刻处理之后,罩层6可以保留在半导体基片2上。例如,如果可光致图案形成的层4的材料足够稳定,可以不需要将可光致图案形成的层4转化为SiO2基材料来提高其稳定性,因此可以不需要除去罩层6的剩余部分。
在一实施方式中,形成自对准接触(“SAC”)。SAC可以形成于晶体管栅极结构之间,例如在DRAM存储单元阵列中。如图2A所示,可以在半导体基片22上形成晶体管栅极结构20。这些晶体管栅极结构20可通过常规的技术形成,可包括多层,例如聚硅(polysilicon)层、硅化钨层和多层绝缘层。也可在晶体管栅极结构20之上沉积可光致图案形成层24,填充晶体管栅极结构20之间的空隙。尽管图2A中显示了两个晶体管栅极结构20,应当理解可以具有任意数量的晶体管栅极结构20。
如图2B和2C所示可以在可光致图案形成层24上沉积罩层26和光刻胶层28,并且如前文所述地形成图案,从而使部分的可光致图案形成层24暴露。可使可光致图案形成层24的暴露部分暴露在第一波长25的辐射之下。如图2D和2E所示,可将可光致图案形成层24的曝光部分暴露于第二波长23(这种波长是能够最有效地将这些部分转化为SiO2基材料的波长)的辐射之下从而形成SiO2基部分27。可光致图案形成层24未暴露的部分受到罩层26的保护,因此在这些部分未从PAG生成质子。如图2F所示,可以用对SiO2基材料具有选择性的蚀刻剂除去SiO2基部分27,使得半导体基片22的部分表面暴露出来。如图2G和2H所示,可以除去光刻胶层28和罩层26,可光致图案形成层24剩下的部分通过暴露于辐射之下而转化为SiO2基部分27’。
SAC可以形成于晶体管栅极结构20之间的蚀刻区域。如本领域所示,SAC的接触层可由聚硅、铜、铝、硅化钨或其它导电接触材料形成。
还预期可以将本文所述的罩层用于形成其它半导体器件结构,这些结构包括但不限于自对准通路、介电层、沟槽、浅槽隔离、导体、绝缘体、电容器、栅极和源漏结。这些半导体器件结构可用来制造半导体存储器器件,例如动态随机存取存储器(“DRAM”)、静态随机存取存储器(“SRAM”)、同步DRAM(“SDRAM”)、闪存和其它存储器件。例如,在形成自对准通路时,可如上所述在第一金属结构上沉积罩层。该罩层可包括DARC或TiN之类的增透涂层。可以在第一金属结构和罩层上形成包含PSZ化合物和PAG的可光致图案形成的层。可以在自对准通路从第二金属结构延伸下来的位置除去可光致图案形成的层和罩层。当中间半导体器件结构暴露于辐射之下时,可以从第一金属结构反射的辐射来增强PAG的活化。这可通过控制第一金属结构所反射的辐射量来完成。只有当辐射的量足够时,才能使PAG有效地活化,从而将可光致图案形成的层转化为SiO2基材料。然后可除去SiO2基材料以形成自对准通路。由于自对准通路的形成是取决于从第一金属结构的反射辐射,所以所得的通路是自对准的。
如本文所述,可以用罩层隔离图案形成过程和转化过程,使得这些过程的条件都能够最优而不影响其它的过程。换言之,可以用图案形成过程最优的波长使中间半导体器件结构形成图案,另一方面也可使用能够最优地将有机硅光刻胶材料转化为SiO2基材料的波长。罩层防止辐射射入可光致图案形成的层中,从而使得中间半导体器件结构能够暴露于此前不能使用的辐射之下。
尽管很容易对本发明进行各种修改或替代,在附图中以实施例的方式显示了具体的实施方式,本文也对其进行了详细描述。然而,应当理解本发明并非仅限于所揭示的这些特定形式。相反地,在以下所附权利要求书所述的精神和范围内的所有修改、等价内容和替换均包括在本发明之内。
Claims (33)
1.一种形成中间半导体器件结构的方法,该方法包括以下步骤:
在半导体基片上形成可光致图案形成的层,该可光致图案形成的层包含选自硅聚合物、聚亚甲硅基化合物和聚硅氮烷化合物的有机硅光刻胶材料;
在可光致图案形成的层上形成罩层,该罩层包括阻挡辐射射入可光致图案形成的层的材料;
在罩层上形成光刻胶层,该光刻胶层包含对100-500纳米波长的辐射敏感的光刻胶材料;
使部分光刻胶层和罩层暴露于第一波长的辐射之下,从而形成高分辨率图案;
除去光刻胶层和罩层暴露的部分,从而暴露出部分的可光致图案形成的层,而光刻胶层和罩层余下的部分留在可光致图案形成的层上;以及
使可光致图案形成层暴露的部分受到第二波长的辐射,从而将可光致图案形成层暴露的部分转化为二氧化硅基材料,而光刻胶层和罩层余下的部分继续保护可光致图案形成层未暴露的部分不受辐射。
2.如权利要求1所述的方法,其特征在于,使部分光刻胶层和罩层暴露于第一波长的辐射之下,从而提供高分辨率图案的步骤包括使部分光刻胶层和罩层暴露于第一波长的辐射之下,而不使可光致图案形成层暴露于第一波长的辐射之下。
3.如权利要求1或2所述的方法,其特征在于,使部分光刻胶层和罩层暴露于第一波长的辐射之下,从而形成高分辨率图案的步骤包括使部分光刻胶层和罩层暴露于为100-300纳米的波长辐射之下。
4.如权利要求1所述的方法,其特征在于,使部分光刻胶层和罩层暴露于第一波长的辐射之下,从而形成高分辨率图案的步骤包括使部分光刻胶层和罩层暴露于193纳米的波长或248纳米的波长之下。
5.如权利要求1所述的方法,其特征在于,使部分可光致图案形成层暴露于第二波长的辐射之下的步骤包括使部分可光致图案形成层转化为硅倍半氧烷材料。
6.如权利要求1所述的方法,其特征在于,使部分可光致图案形成层受到第二波长的辐射的步骤包括使部分可光致图案形成层转化为硅倍半氧烷材料,所述硅倍半氧烷材料选自氢硅倍半氧烷、甲基硅倍半氧烷、多氢硅倍半氧烷、氢聚硅倍半氧烷、甲基聚硅倍半氧烷和苯基聚硅倍半氧烷。
7.如权利要求1所述的方法,还包括除去部分转化为二氧化硅基材料的可光致图案形成层的步骤。
8.如权利要求1所述的方法,还包括将可光致图案形成层余下的部分转化为二氧化硅基材料的步骤。
9.如权利要求1所述的方法,其特征在于,在半导体基片上形成可光致图案形成层的步骤包括用配制成能够在暴露于辐射时选择性转化为硅倍半氧烷材料的材料形成可光致图案形成层。
10.如权利要求1所述的方法,其特征在于,在半导体基片上形成可光致图案形成层的步骤包括使用配制成当暴露于辐射之下时能够选择性转化为硅倍半氧烷材料的材料,形成可光致图案形成层,所述硅倍半氧烷材料选自氢硅倍半氧烷、甲基硅倍半氧烷、多氢硅倍半氧烷、氢聚硅倍半氧烷、甲基聚硅倍半氧烷和苯基聚硅倍半氧烷。
11.如权利要求1所述的方法,其特征在于,在半导体基片上形成可光致图案形成层的步骤包括在可光致图案形成层中包含光致生酸剂。
12.如权利要求1所述的方法,其特征在于,在半导体基片上形成可光致图案形成的层的步骤包括在位于基片上的至少一个半导体器件结构上形成可光致图案形成的层。
13.如权利要求12所述的方法,其特征在于,除去部分的光刻胶层和罩层,从而暴露出部分的可光致图案形成的层的步骤包括形成自对准通路,该自对准通路暴露出在至少一个半导体器件结构的至少一部分上的部分可光致图案形成的层。
14.如权利要求1所述的方法,其特征在于,在可光致图案形成的层上形成罩层的步骤包括在可光致图案形成的层上形成介电增透涂层、底增透涂层或金属涂层。
15.如权利要求1所述的方法,其特征在于,在可光致图案形成的层上形成罩层的步骤包括用选自无定形碳、碳化硅、氮化钛、氮化硅和氮氧化硅的材料形成罩层。
16.如权利要求1所述的方法,其特征在于,在可光致图案形成的层上形成罩层的步骤包括使所述罩层形成足以防止辐射射入可光致图案形成层的厚度。
17.如权利要求1所述的方法,其特征在于,在罩层上形成光刻胶层的步骤包括用对193纳米或248纳米的波长敏感的光刻胶材料形成光刻胶层。
18.一种中间半导体器件结构,包括:
半导体基片;
在所述半导体基片上形成的可光致图案形成的层,所述可光致图案形成的层包含一种材料,该材料被配制成当暴露于辐射之下时转化为二氧化硅基材料,所述材料选自硅聚合物、聚亚甲硅基化合物和聚硅氮烷化合物;
在至少部分的可光致图案形成的层上形成的罩层,该罩层包括阻挡辐射射入可光致图案形成的层的材料;以及
在至少部分罩层上形成的光刻胶层,所述光刻胶层包含对100-500纳米波长的辐射敏感的材料。
19.如权利要求18所述的中间半导体器件结构,其特征在于,在位于半导体基片上的至少一个半导体器件结构上形成可光致图案形成的层。
20.如权利要求18所述的中间半导体器件结构,其特征在于,除去至少第一部分的光刻胶层,余下至少第二部分的光刻胶层,除去至少第一部分的罩层,余下至少第二部分的罩层。
21.如权利要求18-20中的任一项所述的中间半导体器件结构,其特征在于,使至少部分的可光致图案形成层转化为二氧化硅基材料。
22.如权利要求21所述的中间半导体器件结构,其特征在于,转化为二氧化硅基材料的至少部分的可光致图案形成层包含二氧化硅或其烷基化衍生物。
23.如权利要求21所述的中间半导体器件结构,其特征在于,转化为二氧化硅基材料的至少部分的可光致图案形成层包含硅倍半氧烷材料。
24.如权利要求18所述的中间半导体器件结构,其特征在于,所述可光致图案形成的层包含光致生酸剂。
25.如权利要求18所述的中间半导体器件结构,其特征在于,所述二氧化硅基材料包含二氧化硅或其烷基化衍生物。
26.如权利要求18所述的中间半导体器件结构,其特征在于,所述二氧化硅基材料包含硅倍半氧烷材料。
27.如权利要求26中所述的中间半导体器件结构,其特征在于,所述硅倍半氧烷材料选自氢硅倍半氧烷、甲基硅倍半氧烷、多氢硅倍半氧烷、氢聚硅倍半氧烷、甲基聚硅倍半氧烷和苯基聚硅倍半氧烷。
28.如权利要求20所述的中间半导体器件结构,其特征在于,除去至少第一部分的光刻胶层和至少第一部分的罩层,从而形成自对准通路,该自对准通路暴露出在至少一个半导体器件结构的至少一部分上的部分可光致图案形成的层。
29.如权利要求18所述的中间半导体器件结构,其特征在于,罩层具有足以防止辐射射入可光致图案形成层中的厚度。
30.如权利要求18所述的中间半导体器件结构,其特征在于,所述罩层的厚度大于10纳米。
31.如权利要求18所述的中间半导体器件结构,其特征在于,光刻胶层包含能够形成高分辨率图案的光刻胶材料。
32.如权利要求18所述的中间半导体器件结构,其特征在于,所述光刻胶层包含对193纳米或248纳米的波长敏感的光刻胶材料。
33.如权利要求28-32中的任一项所述的中间半导体器件结构,其特征在于,已从所述可光致图案形成的层上除去二氧化硅基材料。
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US10/435,791 US7060637B2 (en) | 2003-05-12 | 2003-05-12 | Methods of forming intermediate semiconductor device structures using spin-on, photopatternable, interlayer dielectric materials |
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- 2004-05-06 TW TW93112737A patent/TWI306545B/zh active
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- 2004-05-11 KR KR1020057021564A patent/KR100840138B1/ko active IP Right Grant
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Also Published As
Publication number | Publication date |
---|---|
US20060205236A1 (en) | 2006-09-14 |
TW200508033A (en) | 2005-03-01 |
US20110065050A1 (en) | 2011-03-17 |
US7855154B2 (en) | 2010-12-21 |
TWI306545B (en) | 2009-02-21 |
US20060172079A1 (en) | 2006-08-03 |
US8486612B2 (en) | 2013-07-16 |
EP1623273A2 (en) | 2006-02-08 |
JP2007503730A (ja) | 2007-02-22 |
EP1623273B1 (en) | 2015-06-24 |
US7678460B2 (en) | 2010-03-16 |
US7060637B2 (en) | 2006-06-13 |
KR20060003094A (ko) | 2006-01-09 |
WO2004102274A3 (en) | 2005-09-09 |
JP4640657B2 (ja) | 2011-03-02 |
CN1809788A (zh) | 2006-07-26 |
KR100840138B1 (ko) | 2008-06-23 |
US20040229050A1 (en) | 2004-11-18 |
WO2004102274A2 (en) | 2004-11-25 |
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