CN1802607B - 具有全氟化多官能阴离子的光酸产生剂 - Google Patents

具有全氟化多官能阴离子的光酸产生剂 Download PDF

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Publication number
CN1802607B
CN1802607B CN200480014082XA CN200480014082A CN1802607B CN 1802607 B CN1802607 B CN 1802607B CN 200480014082X A CN200480014082X A CN 200480014082XA CN 200480014082 A CN200480014082 A CN 200480014082A CN 1802607 B CN1802607 B CN 1802607B
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CN
China
Prior art keywords
photoacid generator
group
groups
acid
resist polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN200480014082XA
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English (en)
Chinese (zh)
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CN1802607A (zh
Inventor
威廉·M·拉曼纳
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of CN1802607A publication Critical patent/CN1802607A/zh
Application granted granted Critical
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Anticipated expiration legal-status Critical
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/122—Sulfur compound containing
    • Y10S430/123—Sulfur in heterocyclic ring
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/126—Halogen compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/146—Laser beam

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
CN200480014082XA 2003-05-22 2004-05-07 具有全氟化多官能阴离子的光酸产生剂 Expired - Fee Related CN1802607B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/444,124 US7122294B2 (en) 2003-05-22 2003-05-22 Photoacid generators with perfluorinated multifunctional anions
US10/444,124 2003-05-22
PCT/US2004/014348 WO2004107051A2 (en) 2003-05-22 2004-05-07 Photoacid generators with perfluorinated multifunctional anions

Publications (2)

Publication Number Publication Date
CN1802607A CN1802607A (zh) 2006-07-12
CN1802607B true CN1802607B (zh) 2011-10-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN200480014082XA Expired - Fee Related CN1802607B (zh) 2003-05-22 2004-05-07 具有全氟化多官能阴离子的光酸产生剂

Country Status (6)

Country Link
US (1) US7122294B2 (https=)
EP (1) EP1625447B1 (https=)
JP (1) JP4680915B2 (https=)
KR (1) KR101070032B1 (https=)
CN (1) CN1802607B (https=)
WO (1) WO2004107051A2 (https=)

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JP4389485B2 (ja) * 2003-06-04 2009-12-24 Ｊｓｒ株式会社 酸発生剤および感放射線性樹脂組成物
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TWI366067B (en) 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
JP4474246B2 (ja) * 2003-09-19 2010-06-02 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7449573B2 (en) * 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
JP4474256B2 (ja) * 2004-09-30 2010-06-02 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
JP4562537B2 (ja) * 2005-01-28 2010-10-13 富士フイルム株式会社 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法
JP2007003619A (ja) * 2005-06-21 2007-01-11 Fujifilm Holdings Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いる化合物
US7521170B2 (en) * 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
JP4695941B2 (ja) 2005-08-19 2011-06-08 富士フイルム株式会社 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
US7678528B2 (en) * 2005-11-16 2010-03-16 Az Electronic Materials Usa Corp. Photoactive compounds
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KR100829615B1 (ko) 2006-10-11 2008-05-14 삼성전자주식회사 광산 발생제, 이를 포함하는 포토레지스트 조성물 및 패턴형성 방법
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JP5572292B2 (ja) * 2008-06-20 2014-08-13 三菱マテリアル株式会社 ペルフルオロ二官能酸の製造方法
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JP2010094028A (ja) * 2008-10-14 2010-04-30 Ulvac Japan Ltd 表面修飾基板、表面修飾基板の製造方法及び表面修飾基板の製造システム
US9551928B2 (en) * 2009-04-06 2017-01-24 Fujifilm Corporation Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith
JP5617844B2 (ja) * 2009-10-20 2014-11-05 Jsr株式会社 感放射線性樹脂組成物
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WO2023120250A1 (ja) * 2021-12-23 2023-06-29 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、及び化合物
JP7791860B2 (ja) * 2022-07-19 2025-12-24 デュポン エレクトロニック マテリアルズ インターナショナル，エルエルシー 光酸発生剤、フォトレジスト組成物及びパターン形成方法
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KR20060013672A (ko) 2006-02-13
KR101070032B1 (ko) 2011-10-04
US20040234888A1 (en) 2004-11-25
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US7122294B2 (en) 2006-10-17
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CN1802607A (zh) 2006-07-12

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