KR101070032B1 - 퍼플루오르화 다관능성 음이온을 갖는 광산 발생제 - Google Patents
퍼플루오르화 다관능성 음이온을 갖는 광산 발생제 Download PDFInfo
- Publication number
- KR101070032B1 KR101070032B1 KR1020057022224A KR20057022224A KR101070032B1 KR 101070032 B1 KR101070032 B1 KR 101070032B1 KR 1020057022224 A KR1020057022224 A KR 1020057022224A KR 20057022224 A KR20057022224 A KR 20057022224A KR 101070032 B1 KR101070032 B1 KR 101070032B1
- Authority
- KR
- South Korea
- Prior art keywords
- delete delete
- group
- photoacid generator
- pag
- perfluorinated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/126—Halogen compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/444,124 US7122294B2 (en) | 2003-05-22 | 2003-05-22 | Photoacid generators with perfluorinated multifunctional anions |
| US10/444,124 | 2003-05-22 | ||
| PCT/US2004/014348 WO2004107051A2 (en) | 2003-05-22 | 2004-05-07 | Photoacid generators with perfluorinated multifunctional anions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20060013672A KR20060013672A (ko) | 2006-02-13 |
| KR101070032B1 true KR101070032B1 (ko) | 2011-10-04 |
Family
ID=33450568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057022224A Expired - Fee Related KR101070032B1 (ko) | 2003-05-22 | 2005-11-21 | 퍼플루오르화 다관능성 음이온을 갖는 광산 발생제 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7122294B2 (https=) |
| EP (1) | EP1625447B1 (https=) |
| JP (1) | JP4680915B2 (https=) |
| KR (1) | KR101070032B1 (https=) |
| CN (1) | CN1802607B (https=) |
| WO (1) | WO2004107051A2 (https=) |
Families Citing this family (49)
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|---|---|---|---|---|
| JP4389485B2 (ja) * | 2003-06-04 | 2009-12-24 | Jsr株式会社 | 酸発生剤および感放射線性樹脂組成物 |
| JP4644457B2 (ja) * | 2003-09-10 | 2011-03-02 | 富士フイルム株式会社 | 感光性組成物及びそれを用いたパターン形成方法 |
| TWI366067B (en) | 2003-09-10 | 2012-06-11 | Fujifilm Corp | Photosensitive composition and pattern forming method using the same |
| JP4474246B2 (ja) * | 2003-09-19 | 2010-06-02 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| US7449573B2 (en) * | 2004-02-16 | 2008-11-11 | Fujifilm Corporation | Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition |
| JP4474256B2 (ja) * | 2004-09-30 | 2010-06-02 | 富士フイルム株式会社 | レジスト組成物及びそれを用いたパターン形成方法 |
| JP4562537B2 (ja) * | 2005-01-28 | 2010-10-13 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いる化合物及び該感光性組成物を用いたパターン形成方法 |
| JP2007003619A (ja) * | 2005-06-21 | 2007-01-11 | Fujifilm Holdings Corp | 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いる化合物 |
| US7521170B2 (en) * | 2005-07-12 | 2009-04-21 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| JP4695941B2 (ja) | 2005-08-19 | 2011-06-08 | 富士フイルム株式会社 | 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| US7678528B2 (en) * | 2005-11-16 | 2010-03-16 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| JP4822269B2 (ja) * | 2006-06-09 | 2011-11-24 | 独立行政法人産業技術総合研究所 | 新規なオニウム塩 |
| GB2441032B (en) * | 2006-08-18 | 2008-11-12 | Sumitomo Chemical Co | Salts of perfluorinated sulfoacetic acids |
| JP5226994B2 (ja) * | 2006-09-11 | 2013-07-03 | 住友化学株式会社 | 化学増幅型レジスト組成物の酸発生剤の中間体 |
| KR100829615B1 (ko) | 2006-10-11 | 2008-05-14 | 삼성전자주식회사 | 광산 발생제, 이를 포함하는 포토레지스트 조성물 및 패턴형성 방법 |
| US7390613B1 (en) * | 2006-12-04 | 2008-06-24 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| US7491482B2 (en) * | 2006-12-04 | 2009-02-17 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| US8053168B2 (en) | 2006-12-19 | 2011-11-08 | Palo Alto Research Center Incorporated | Printing plate and system using heat-decomposable polymers |
| US20080187868A1 (en) * | 2007-02-07 | 2008-08-07 | Munirathna Padmanaban | Photoactive Compounds |
| JP5210612B2 (ja) * | 2007-12-05 | 2013-06-12 | 東京応化工業株式会社 | 新規な化合物、酸発生剤、レジスト組成物およびレジストパターン形成方法 |
| US8034533B2 (en) * | 2008-01-16 | 2011-10-11 | International Business Machines Corporation | Fluorine-free heteroaromatic photoacid generators and photoresist compositions containing the same |
| JP5572292B2 (ja) * | 2008-06-20 | 2014-08-13 | 三菱マテリアル株式会社 | ペルフルオロ二官能酸の製造方法 |
| JP2010094029A (ja) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | 表面修飾基板、表面修飾基板の製造方法及び表面修飾基板の製造システム |
| JP2010094028A (ja) * | 2008-10-14 | 2010-04-30 | Ulvac Japan Ltd | 表面修飾基板、表面修飾基板の製造方法及び表面修飾基板の製造システム |
| US9551928B2 (en) * | 2009-04-06 | 2017-01-24 | Fujifilm Corporation | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith |
| JP5617844B2 (ja) * | 2009-10-20 | 2014-11-05 | Jsr株式会社 | 感放射線性樹脂組成物 |
| PT2497085E (pt) * | 2009-11-03 | 2014-03-27 | Bayer Ip Gmbh | Processo para a produção de um filme holográfico |
| JP5618757B2 (ja) * | 2010-06-29 | 2014-11-05 | 富士フイルム株式会社 | 半導体用レジスト組成物、並びに、この組成物を用いたレジスト膜及びパターン形成方法 |
| KR20120001609A (ko) * | 2010-06-29 | 2012-01-04 | 후지필름 가부시키가이샤 | 반도체용 레지스트 조성물, 및 이 조성물을 사용한 레지스트막과 패턴 형성 방법 |
| US9156785B2 (en) | 2010-11-15 | 2015-10-13 | Rohm And Haas Electronic Materials Llc | Base reactive photoacid generators and photoresists comprising same |
| US20120122031A1 (en) * | 2010-11-15 | 2012-05-17 | International Business Machines Corporation | Photoresist composition for negative development and pattern forming method using thereof |
| US8614047B2 (en) | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
| JP2013079232A (ja) | 2011-09-30 | 2013-05-02 | Rohm & Haas Electronic Materials Llc | 光酸発生剤およびこれを含むフォトレジスト |
| JP6002430B2 (ja) * | 2012-05-08 | 2016-10-05 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法、化合物 |
| US10031416B2 (en) | 2013-08-07 | 2018-07-24 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
| US20160223904A1 (en) * | 2013-10-02 | 2016-08-04 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species |
| WO2015052914A1 (en) * | 2013-10-07 | 2015-04-16 | Toyo Gosei Co., Ltd. | Reagent for enhancing generation of chemical species and manufacturing apparatus |
| KR102093677B1 (ko) | 2015-11-05 | 2020-03-26 | 후지필름 가부시키가이샤 | 감활성광선성 또는 감방사선성 수지 조성물, 패턴 형성 방법, 및 전자 디바이스의 제조 방법 |
| US10831100B2 (en) * | 2017-11-20 | 2020-11-10 | Rohm And Haas Electronic Materials, Llc | Iodine-containing photoacid generators and compositions comprising the same |
| CN109928904A (zh) | 2017-11-30 | 2019-06-25 | 罗门哈斯电子材料有限责任公司 | 两性离子化合物和包括其的光致抗蚀剂 |
| JP6965232B2 (ja) * | 2017-11-30 | 2021-11-10 | ローム アンド ハース エレクトロニック マテリアルズ エルエルシーRohm and Haas Electronic Materials LLC | 塩およびそれを含むフォトレジスト |
| CN111479693B (zh) * | 2017-12-13 | 2023-06-16 | 3M创新有限公司 | 含有三烷基硼烷络合物引发剂和光酸的光学透明粘合剂 |
| WO2020158337A1 (ja) * | 2019-01-28 | 2020-08-06 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
| KR102888292B1 (ko) * | 2020-10-30 | 2025-11-19 | 주식회사 엘지화학 | 술포닐플루오라이드기 함유 화합물 및 이의 제조방법 |
| KR102828427B1 (ko) * | 2020-10-30 | 2025-07-02 | 주식회사 엘지화학 | 변성 공액디엔계 중합체, 이의 제조방법 및 이를 포함하는 고무 조성물 |
| US20240368000A1 (en) * | 2021-06-25 | 2024-11-07 | University Of Washington | Carbon removal from seawater and other liquids using photoactive compounds |
| WO2023120250A1 (ja) * | 2021-12-23 | 2023-06-29 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、電子デバイスの製造方法、及び化合物 |
| JP7791860B2 (ja) * | 2022-07-19 | 2025-12-24 | デュポン エレクトロニック マテリアルズ インターナショナル,エルエルシー | 光酸発生剤、フォトレジスト組成物及びパターン形成方法 |
| CN119556527B (zh) * | 2025-01-10 | 2025-10-21 | 广东科优材料科技有限公司 | 一种光刻胶组合物及其制备工艺 |
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- 2004-05-07 JP JP2006532863A patent/JP4680915B2/ja not_active Expired - Fee Related
- 2004-05-07 WO PCT/US2004/014348 patent/WO2004107051A2/en not_active Ceased
- 2004-05-07 EP EP04751648.9A patent/EP1625447B1/en not_active Expired - Lifetime
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- 2005-11-21 KR KR1020057022224A patent/KR101070032B1/ko not_active Expired - Fee Related
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| JP2001133984A (ja) | 1999-11-01 | 2001-05-18 | Shin Etsu Chem Co Ltd | 反射防止膜材料及びパターン形成方法 |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2004107051A3 (en) | 2006-03-09 |
| JP2007507580A (ja) | 2007-03-29 |
| JP4680915B2 (ja) | 2011-05-11 |
| EP1625447B1 (en) | 2014-04-23 |
| KR20060013672A (ko) | 2006-02-13 |
| CN1802607B (zh) | 2011-10-05 |
| US20040234888A1 (en) | 2004-11-25 |
| EP1625447A2 (en) | 2006-02-15 |
| US7122294B2 (en) | 2006-10-17 |
| WO2004107051A2 (en) | 2004-12-09 |
| CN1802607A (zh) | 2006-07-12 |
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