CN1794432A - 半导体平台工艺 - Google Patents
半导体平台工艺 Download PDFInfo
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- CN1794432A CN1794432A CN 200510095387 CN200510095387A CN1794432A CN 1794432 A CN1794432 A CN 1794432A CN 200510095387 CN200510095387 CN 200510095387 CN 200510095387 A CN200510095387 A CN 200510095387A CN 1794432 A CN1794432 A CN 1794432A
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- silicon
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- photoetching
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000005516 engineering process Methods 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 19
- 238000001259 photo etching Methods 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000007797 corrosion Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 8
- 229910052698 phosphorus Inorganic materials 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 claims description 5
- 230000003628 erosive effect Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000428 dust Substances 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 238000005507 spraying Methods 0.000 claims description 4
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 claims description 4
- 206010034960 Photophobia Diseases 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 208000013469 light sensitivity Diseases 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- LOPFACFYGZXPRZ-UHFFFAOYSA-N [Si].[As] Chemical compound [Si].[As] LOPFACFYGZXPRZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 238000010792 warming Methods 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB2005100953874A CN100361281C (zh) | 2005-11-11 | 2005-11-11 | 半导体平台工艺 |
Applications Claiming Priority (1)
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CNB2005100953874A CN100361281C (zh) | 2005-11-11 | 2005-11-11 | 半导体平台工艺 |
Publications (2)
Publication Number | Publication Date |
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CN1794432A true CN1794432A (zh) | 2006-06-28 |
CN100361281C CN100361281C (zh) | 2008-01-09 |
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Family Applications (1)
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CNB2005100953874A Expired - Fee Related CN100361281C (zh) | 2005-11-11 | 2005-11-11 | 半导体平台工艺 |
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CN (1) | CN100361281C (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101311340B (zh) * | 2008-03-19 | 2010-06-02 | 南京国盛电子有限公司 | 硅反外延片的制造方法及其专用设备 |
CN101364538B (zh) * | 2007-08-09 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 栅层形成方法 |
CN101937845A (zh) * | 2010-08-24 | 2011-01-05 | 如皋市日鑫电子有限公司 | 一种二极管台面处理工艺 |
CN101656191B (zh) * | 2008-08-19 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 去除氮氧化硅膜的方法 |
CN101770942B (zh) * | 2008-12-29 | 2011-08-24 | 北大方正集团有限公司 | 利用p型衬底硅片测量温度的方法和装置 |
CN101517744B (zh) * | 2006-09-22 | 2012-07-18 | 英特尔公司 | 用于深亚微米制造工艺的对称双极结型晶体管 |
CN101123285B (zh) * | 2006-08-09 | 2012-09-05 | 广东昭信光电科技有限公司 | 采用旋胶和光刻工艺封装发光二极管的方法 |
CN103526181A (zh) * | 2013-10-18 | 2014-01-22 | 四川飞阳科技有限公司 | Lpcvd自动补水系统 |
CN104810363A (zh) * | 2014-01-26 | 2015-07-29 | 北大方正集团有限公司 | 功率集成器件及其制作方法 |
CN112864230A (zh) * | 2021-03-12 | 2021-05-28 | 深圳市昭矽微电子科技有限公司 | 双极晶体管及其制作方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001267326A (ja) * | 2000-03-14 | 2001-09-28 | Nec Yamagata Ltd | 半導体装置及びその製造方法 |
DE10134089A1 (de) * | 2001-07-13 | 2003-01-30 | Infineon Technologies Ag | Verfahren zur Herstellung eines Bipolartransistors mit Polysiliziumemitter |
JP2003297848A (ja) * | 2002-04-01 | 2003-10-17 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
CN1542928A (zh) * | 2003-04-30 | 2004-11-03 | 上海贝岭股份有限公司 | 一种半导体晶体管的制造方法及其产品 |
US6979884B2 (en) * | 2003-12-04 | 2005-12-27 | International Business Machines Corporation | Bipolar transistor having self-aligned silicide and a self-aligned emitter contact border |
US7075126B2 (en) * | 2004-02-27 | 2006-07-11 | International Business Machines Corporation | Transistor structure with minimized parasitics and method of fabricating the same |
JP2005259755A (ja) * | 2004-03-09 | 2005-09-22 | Matsushita Electric Ind Co Ltd | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
-
2005
- 2005-11-11 CN CNB2005100953874A patent/CN100361281C/zh not_active Expired - Fee Related
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101123285B (zh) * | 2006-08-09 | 2012-09-05 | 广东昭信光电科技有限公司 | 采用旋胶和光刻工艺封装发光二极管的方法 |
CN101517744B (zh) * | 2006-09-22 | 2012-07-18 | 英特尔公司 | 用于深亚微米制造工艺的对称双极结型晶体管 |
CN101364538B (zh) * | 2007-08-09 | 2010-08-11 | 中芯国际集成电路制造(上海)有限公司 | 栅层形成方法 |
CN101311340B (zh) * | 2008-03-19 | 2010-06-02 | 南京国盛电子有限公司 | 硅反外延片的制造方法及其专用设备 |
CN101656191B (zh) * | 2008-08-19 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 去除氮氧化硅膜的方法 |
CN101770942B (zh) * | 2008-12-29 | 2011-08-24 | 北大方正集团有限公司 | 利用p型衬底硅片测量温度的方法和装置 |
CN101937845A (zh) * | 2010-08-24 | 2011-01-05 | 如皋市日鑫电子有限公司 | 一种二极管台面处理工艺 |
CN103526181A (zh) * | 2013-10-18 | 2014-01-22 | 四川飞阳科技有限公司 | Lpcvd自动补水系统 |
CN103526181B (zh) * | 2013-10-18 | 2016-06-22 | 四川飞阳科技有限公司 | Lpcvd自动补水系统 |
CN104810363A (zh) * | 2014-01-26 | 2015-07-29 | 北大方正集团有限公司 | 功率集成器件及其制作方法 |
CN112864230A (zh) * | 2021-03-12 | 2021-05-28 | 深圳市昭矽微电子科技有限公司 | 双极晶体管及其制作方法 |
Also Published As
Publication number | Publication date |
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CN100361281C (zh) | 2008-01-09 |
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EE01 | Entry into force of recordation of patent licensing contract |
Assignee: YANGZHOU GUOYU ELECTRONICS CO., LTD. Assignor: No.55 Inst., China Electronic Science and Technology Group Corp. Contract record no.: 2010320000882 Denomination of invention: Semiconductor platform technology Granted publication date: 20080109 License type: Exclusive License Open date: 20060628 Record date: 20100708 |
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EC01 | Cancellation of recordation of patent licensing contract |
Assignee: YANGZHOU GUOYU ELECTRONICS CO., LTD. Assignor: No.55 Inst., China Electronic Science and Technology Group Corp. Contract record no.: 2010320000882 Date of cancellation: 20151125 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20060628 Assignee: YANGZHOU GUOYU ELECTRONICS CO., LTD. Assignor: No.55 Inst., China Electronic Science and Technology Group Corp. Contract record no.: 2015320000653 Denomination of invention: Semiconductor platform technology Granted publication date: 20080109 License type: Exclusive License Record date: 20151217 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
EC01 | Cancellation of recordation of patent licensing contract |
Assignee: YANGZHOU GUOYU ELECTRONICS CO., LTD. Assignor: No.55 Inst., China Electronic Science and Technology Group Corp. Contract record no.: 2015320000653 Date of cancellation: 20160922 |
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LICC | Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080109 Termination date: 20171111 |