CN1791563A - X7r绝缘组合物 - Google Patents
X7r绝缘组合物 Download PDFInfo
- Publication number
- CN1791563A CN1791563A CN200480013296.5A CN200480013296A CN1791563A CN 1791563 A CN1791563 A CN 1791563A CN 200480013296 A CN200480013296 A CN 200480013296A CN 1791563 A CN1791563 A CN 1791563A
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- multilayer ceramic
- chip capacitor
- ceramic chip
- insulating material
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- 239000000203 mixture Substances 0.000 title claims description 49
- 239000003990 capacitor Substances 0.000 claims abstract description 45
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000000919 ceramic Substances 0.000 claims abstract description 33
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 5
- 239000010949 copper Substances 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011810 insulating material Substances 0.000 claims description 26
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 11
- 239000002245 particle Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000002360 preparation method Methods 0.000 claims description 8
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- 230000001070 adhesive effect Effects 0.000 claims description 5
- -1 polyethylene butanols Polymers 0.000 claims description 4
- 238000001238 wet grinding Methods 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims 2
- 238000009413 insulation Methods 0.000 abstract description 63
- 239000012298 atmosphere Substances 0.000 abstract description 31
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- AMWRITDGCCNYAT-UHFFFAOYSA-L manganese oxide Inorganic materials [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 abstract description 14
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 13
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 abstract description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 9
- 229910002113 barium titanate Inorganic materials 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 7
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 5
- 239000000956 alloy Substances 0.000 abstract description 5
- 229910000019 calcium carbonate Inorganic materials 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 239000000470 constituent Substances 0.000 abstract description 5
- 235000010216 calcium carbonate Nutrition 0.000 abstract description 4
- 229910052681 coesite Inorganic materials 0.000 abstract description 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 229910052682 stishovite Inorganic materials 0.000 abstract description 4
- 229910052905 tridymite Inorganic materials 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000012360 testing method Methods 0.000 abstract description 3
- 229910011255 B2O3 Inorganic materials 0.000 abstract 3
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 abstract 1
- 229910000510 noble metal Inorganic materials 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 20
- 239000002002 slurry Substances 0.000 description 20
- 239000003795 chemical substances by application Substances 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 239000000395 magnesium oxide Substances 0.000 description 16
- 229910000990 Ni alloy Inorganic materials 0.000 description 11
- 239000000292 calcium oxide Substances 0.000 description 11
- 230000005684 electric field Effects 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- 239000010953 base metal Substances 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
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- 239000011162 core material Substances 0.000 description 6
- 239000011572 manganese Substances 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000011257 shell material Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 229910052810 boron oxide Inorganic materials 0.000 description 3
- 239000003985 ceramic capacitor Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 229920006267 polyester film Polymers 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- MTZOKGSUOABQEO-UHFFFAOYSA-L barium(2+);phthalate Chemical compound [Ba+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O MTZOKGSUOABQEO-UHFFFAOYSA-L 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002075 main ingredient Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004902 Softening Agent Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 235000012204 lemonade/lime carbonate Nutrition 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000013500 performance material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
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- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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Abstract
满足X7R需要的多层陶瓷芯片电容器，其适合还原氛围的烧结条件，因此可以使用非贵金属如镍、铜及其合金，以根据本发明制作内外电极。电容器表现出所需的绝缘性能(高电容，低耗散系数和高绝缘电阻)、高度加速寿命测试时的良好性能，以及对介电击穿的良好抗性。绝缘层优选含有BaTiO3作为主要成分，Mn3O4、Y2O3、Ho2O3、CaCO3、SiO2、B2O3、Al2O3、MgO和CaO作为次要成分。将它们按比例分成批，优选比例为：BaTiO3 99.00～98.5质量％、Mn3O4 0.336～0.505质量％、Y2O3 0.198～0.296质量％、Ho2O30.132～0.198质量％、CaCO3 0.199～0.299质量％、SiO2 0.057～0.085质量％、B2O3 0.039～0.058质量％、Al2O3 0.018～0.027质量％、MgO 0.016～0.025质量％以及CaO 0.005～0.007质量％。优选B2O3、SiO2、MgO、Al2O3和CaO是以预处理玻璃的形式存在。本发明优选的形式可以在温度1,200～1,300℃范围内还原氛围中被烧结。替代地，可以在烧结循环中进行再氧化过程来优化陶瓷对介电击穿的抗性。
Description
技术领域
本发明涉及钛酸钡基绝缘组合物，更特别地涉及可以用于形成多层陶瓷芯片电容器的钛酸钡基绝缘组合物，该多层陶瓷芯片电容器具有由镍或者镍合金形成的内置贱金属电极。
背景技术
多层陶瓷芯片电容器已经被广泛地应用作为微型体积、高电容以及高可靠性的电子元件。根据对更小的和高性能的电子设备日益增长的需求，对多层陶瓷芯片电容器在更小体积、更高电容、更低成本和更高可靠性上有更严格的需求。
通常，形成胶的内置电极与形成胶的绝缘层的交替层的形成，从而来制作多层陶瓷芯片电容器。典型的，通过压片、印刷或者相似的技术并同时进行烧制来形成这些层。
通常，内电极由导体例如钯以及钯合金形成。尽管钯价格昂贵，但其可以通过使用相对不贵的贱金属例如镍和镍合金来部分代替。术语“贱金属”被定义为任何不属于贵金属类(金、银和铂)的金属。如果在周围空气中烧制的话，由于贱金属的内电极会被氧化，所以绝缘层和内电极必须要在还原环境中被共同烧制。然而，在还原环境中的烧制会引起绝缘层被还原，导致电阻系数的降低。虽然设计使用非还原绝缘材料的多层陶瓷芯片电容器，然而这些设备通常是绝缘电阻(IR)寿命较短和可靠性低。
如果将绝缘材料应用于直流(DC)电场中，它的相对介电常数(K)会随时间而降低。如果使用更薄的绝缘层以获得更小体积和更大电容的电容器的话，对电容器施加的直流电压会使绝缘层接收到更强的电场，导致介电常数(K)随时间而产生更大改变，也就是电容随时间变化更大。这种变化在多数应用中是不期望的。
电容器还需要具有良好的直流偏压性能。术语“直流偏压性能”(也被称为电容的电压系数(VCC))被定义为电容随直流偏压(电压)变化的电容变化率。通常，当所施加的直流电场提高时，电容会降低。因此，具有差的直流偏压性能的电容器会有这样的问题，即如果在正常操作过程中施加直流电场，电容会降到不可接受的水平。
电子工业协会(EIA)规定了电容的温度系数(TCC)的标准，即为X7R特征。X7R特征要求在-55℃～125℃的温度范围里，电容的变化率在±15％以内(参照温度为25℃)。
美国专利No.5,335,139中，Nomura等人讨论了用于构建绝缘组合物的各种现有技术。根据Nomura等人的讨论，了解一种符合X7R特征的材料是BaTiO3+SrTiO3+MnO的组合物。然而，这种材料据说在直流电场下随时间会有大的电容变化，例如，在40℃施加50伏的直流电场1,000小时后就会有-10％～-30％的变化。这种变化不符合X7R特征。
Nomura等人进一步描述了一种多层芯片电容器，其具有交替层叠的绝缘层以及可以由镍或者镍合金形成的内电极层。在一种实施方式中，绝缘层含有作为主要组分的钛酸钡，作为次要组分的氧化镁、氧化锰、氧化钡和/或氧化钙、二氧化硅和氧化钇，它们以下面的比例出现：每100摩尔BaTiO3配有0.1～3摩尔MgO、0.05～1.0摩尔MnO、2～12摩尔BaO+CaO、2～12摩尔SiO2以及最多1摩尔Y2O3。Nomura指出每100摩尔BaTiO3含有少于0.1摩尔氧化镁的样品不能够提供所期望的电容温度依赖性。
在陶瓷组合物中期望含有氧化钇以确保高可靠性，具有对介电击穿的高抗性并防止退化。然而，如果组合物中同时出现氧化钇和氧化镁，它们倾向于以一种方式相互作用，这引起电容变化率在温度范围最高值，也就是125℃时，不符合X7R特征。因此，期望开发一种组合物，其含有氧化钇但有很低水平的氧化镁，以形成在125℃满足X7R特征时具有高可靠性以及对直流电压击穿高抗性的电容器。
在Park等人的美国专利No.6,185,087中描述的绝缘组合物表现出改善的温度特性。然而，如果它被使用在绝缘层厚度小于8微米的高电容多层陶瓷电容器中时，电容变化率不符合EIA X7R特征。而且，加入0.1～5摩尔百分数的SiO2可以降低介电常数到3000以下。
发明的简要说明
本发明提供了一种绝缘组合物，其可以用于制造与作为内电极材料的镍和镍合金兼容的陶瓷多层电容器。电容器可以由本发明的绝缘组合物在宽范围的烧结温度和氛围中形成，并表现出伴随很小介电损失的高介电常数和高度加速寿命测试条件下优良的可靠性。另外，电容器可以具有小于3微米的绝缘层，而表现出符合EIA标准的X7R规范的低老化速率和较高的温度特性。
本发明的绝缘组合物包含均一紧密微结构的颗粒，根据扫描电子显微镜(SEM)的分析，其平均直径大约为0.4微米。电容器绝缘层内的颗粒在烧制后表现出了芯-壳结构的形式，其中烧制颗粒的内芯保持高介电常数。颗粒的芯-壳结构不是传统的芯-壳结构，其中在芯材料与包含壳的材料之间存在明显的边界。相反，包含壳的材料分散到包含芯的材料的颗粒中。芯材料的颗粒包括每个绝缘层的主要部分，壳材料分散在颗粒之间留下的空隙中。在绝缘层中形成了浓度梯度，这样在层的外部、芯材料的颗粒之间壳材料浓度是最高的，在层的绝缘核心处浓度是最低的。
本发明的绝缘组合物包含作为主要组分的钛酸钡，和作为次要组分的氧化锰、氧化钇、氧化钬、碳酸钙、氧化硅、氧化硼、氧化铝、氧化镁和氧化钙。优选的，这些组分在绝缘组合物中按照下面比例出现：BaTiO3大约99.80～大约90.00质量％、Mn3O4大约0.067～大约3.364质量％、Y2O3大约0.040～大约1.976质量％、Ho2O3大约0.026～大约1.320质量％、CaCO3大约0.040～大约1.993质量％、SiO2大约0.011～大约0.567质量％、B2O3大约0.008～大约0.389质量％、Al2O3大约0.004～大约0.179质量％、MgO大约0.003～大约0.164质量％以及CaO大约0.001～大约0.047质量％。
通过交替层叠绝缘层和内电极以形成毛坯芯片(green chip)，从而制造多层芯片电容器。多层芯片电容器内的可兼容内电极是镍或者镍合金。形成绝缘层的绝缘组合物是通过对带有粘合剂体系的绝缘组分进行湿磨来制备的。将绝缘组合物放置在聚酯膜上，覆盖膜并形成薄片，该薄片与电极交替层叠以形成毛坯芯片。
形成毛坯芯片后，在低于300℃的温度下，在空气中去除粘合剂。粘合剂被去除后，在潮湿的氮气和氢气的还原氛围中，大约1200℃～大约1300℃的温度下，氧分压为10-8～10-12大气压(atm)的环境中，对毛坯芯片进行烧制。接着在氧气含量为6-60ppm的氛围中，温度≤1100℃的条件下对毛坯芯片进行再氧化以增强绝缘材料的绝缘电阻。
已经发现，本发明的多层陶瓷电容器表现出非常高的介电常数以及在高度加速寿命测试条件下的良好性能，同时也在直流电场中具有高的击穿电压。在施加40V/μm的直流电场和150℃所组成的高度压力条件下，陶瓷电容器显示了10小时的特征寿命。在1V RMS下检测时，介电常数大于3200，耗散系数小于3.0％。在-55℃～+125℃的温度范围里，电容的温度系数在12％以内。
本发明的前面所述的以及其它特征在后面进行更充分的描述，并特别在权利要求中提出，下面的说明对本发明的实施例进行了详细地描述，然而，这些只是用于说明，可以根据本发明的宗旨进行各种改变。
附图说明
图1是根据发明的优选实施方式的多层陶瓷芯片电容器的正面横截视图。
图2是根据本发明的绝缘组合物的介电常数作为烧制条件函数的图表。
图3是根据本发明的绝缘组合物的耗散系数作为烧制条件函数的图表。
图4是根据本发明的绝缘组合物的-55℃电容温度系数(TCC)作为烧制条件函数的图表。
图5是根据本发明的绝缘组合物的125℃TCC作为烧制条件函数的图表。
发明的详细描述
多层陶瓷电容器的结构是本领域中已知的。参考图1，其表示了多层陶瓷芯片电容器1的示范结构。电容器1的外电极4被放置在电容器芯片10的侧表面并与外电极层3有电联系。电容芯片10具有一些交替层叠的绝缘层2。电容器芯片10的形状并不是关键的，尽管其通常是矩形的。同时，大小也不是关键的，芯片可以根据特别的应用来具有适当的尺寸，通常在1.0～5.6mm×0.5～5.0mm×0.5～1.9mm的范围内。层叠内电极层3，这样它们被交替地以相反的末端放置在芯片10的相对侧表面。也就是说，一组内电极层3放置在芯片10一侧表面，另一组内电极层3放置在芯片10相对侧表面。在电容器芯片10与一组内电极层3有电接触的一侧芯片应用一个外电极4；在电容器芯片10与另一组内电极层3有电接触的相对侧表面应用另一个外电极4。依照这种方式，完成了一个所期望的电容器电路。
绝缘层是由绝缘材料形成的，该绝缘材料包含作为主要组分的钛酸钡，作为次要组分的氧化锰、氧化钇、氧化钬、碳酸钙、氧化硅、氧化硼、氧化铝、氧化镁和氧化钙。优选的，这些组分按照下面的比例出现：BaTiO3大约99.80～大约90.00质量％，更优选大约99～大约98.5质量％，Mn3O4大约0.067～大约3.364质量％，更优选大约0.336～大约0.505质量％，Y2O3大约0.040～大约1.976质量％，更优选大约0.198～大约0.296质量％，Ho2O3大约0.026～大约1.320质量％，更优选大约0.132～大约0.198质量％，CaCO3大约0.040～大约1.993质量％，更优选大约0.199～大约0.299质量％，SiO2大约0.011～大约0.567质量％，更优选大约0.057～大约0.085质量％，B2O3大约0.008～大约0.389质量％，更优选大约0.039～大约0.058质量％，Al2O3大约0.004～大约0.179质量％，更优选大约0.018～大约0.027质量％，MgO大约0.003～大约0.164质量％，更优选大约0.016～大约0.025质量％，以及CaO大约0.001～大约0.047质量％，更优选大约0.005～大约0.007质量％。
正如本领域的技术人员能够理解的，“前体”被定义为碳酸盐、氢氧化物、草酸盐、醋酸盐等。然而钛酸钡、氧化锰、氧化钇、氧化钬、碳酸钙、氧化硅、氧化硼、氧化铝、氧化镁和氧化钙被分别记作BaTiO3、Mn3O4、Y2O3、Ho2O3、CaCO3、SiO2、B2O3、Al2O3、MgO以及CaO。优选的，在绝缘材料中所出现的SiO2、B2O3、Al2O3、MgO以及CaO是以预熔的玻璃料的形式被提供的，这提高了绝缘电阻和耐电镀性能和绝缘材料的致密化。只要组成各种氧化物的金属元素是在上述范围内，各种氧化物的氧化态并不是关键的。
绝缘材料中可以含有其它的化合物，只要这些化合物不负面地影响绝缘性能。优选所加入的MgO不要超过绝缘组合物的0.082质量％。绝缘组合物中超过0.082质量％的氧化镁倾向于使125℃的TCC降低到X7R数值范围以外。
下面描述的是各种次要组分含量限制的原因。氧化钇对于提高IR的加速寿命和直流偏压性能是有效的。如果氧化钇在上述基础上的含量为0.04质量％或者更少，直流偏压性能会很差。如果氧化钇的含量超过了上述范围，会导致介电常数降低并降低可烧结性能，从而引起较低的致密化。
SiO2含量低于上述范围会大大地降低可烧结性能并导致较低的致密化，但是大于上述范围的含量会导致起始绝缘电阻的降低。氧化锰对于绝缘层的致密化和提高IR的加速寿命是有效的。如果氧化锰的含量大于上述范围，施加直流电场后随时间降低电容的变化是困难的。为了完全有效，氧化镁的含量在同样的基础上至少为0.67质量％。
绝缘层可以具有任何期望的平均粒径。通过将绝缘材料限制到上述组合物，获得了平均粒径为大约0.2～大约0.7μm的细晶体颗粒，其中优选的是大约0.4μm的粒径。
绝缘层具有适当的居里温度(Curie temperature)，其是按照适当选择绝缘材料特定组分的应用标准来确定的。典型的，居里温度高于45℃，优选大约65℃～大约125℃。
每个绝缘层优选具有最多大约50μm的厚度，更优选的最多大约20μm。厚度的下限是大约0.5μm，优选大约2μm。对于具有这种薄绝缘材料多层陶瓷芯片电容器，用于使电容随时间的变化最小化，本发明是有效可应用的。层叠的绝缘层的数目通常为大约2～大约600，更优选的是大约2～大约400。
尽管由于绝缘层2的绝缘材料具有抗还原性能，所以优选使用贱金属，但形成内电极层3的导体不是关键的。典型的贱金属是镍和镍合金。优选的镍合金是镍与选自Mn、Cr、Co、Cu和Al中的至少一个形成的合金，其中优选该镍合金中镍的含量至少为95质量％。需要注意的是镍和镍合金可以含有最多大约0.1质量％的含磷物或者其它痕量组分。
内电极层的厚度可以按照特别的目的和应用来适当地确定，尽管其上限通常是大约5μm，更优选的是大约2.5μm，其下限是大约0.5μm，更优选的是大约1μm。
形成外电极4的导体不是关键的，尽管例如镍、铜的贱金属和它们的合金是优选。外电极的厚度可以按照特别的目的和应用来适当的确定，尽管其通常的范围是大约10μm～大约50μm。
本发明的多层陶瓷芯片电容器是这样制作的，使用浆料通过传统的印制和压片方法形成毛坯芯片，烧制芯片，以及印制或者调转外电极，接着烘烤，从而制得多层陶瓷芯片电容器。
用于形成绝缘层的浆料可以通过将绝缘材料与有机载体混合来获得。绝缘原材料可以是前面所述的氧化物和复合氧化物的混合物。而且通过烧制可以转化成这种氧化物和复合氧化物的各种化合物也是有用的。这些化合物包括，例如，碳酸盐、草酸盐、硝酸盐、氢氧化物和有机金属化合物。优选的，选择含有这些氧化物或者这些氧化物前体的化合物，并且以适当比例的混合来获得绝缘原材料。确定绝缘原材料的这些化合物的比例，以便在烧制后，可以得到特殊的绝缘层组分。绝缘原材料通常以粉末的形式使用，其具有的平均粒径为大约0.1～大约3μm，并且更优选大约1μm或者更小。
有机载体是有机溶剂中的粘合剂。这里所使用的粘合剂并不是关键的，其可以选自通常的粘合剂，例如乙基纤维素和聚乙烯丁醇。同时这里所使用的有机溶剂不是关键的，并且可以按照特别的应用方法，例如印制或者压片方法，从通常的有机溶剂例如松油醇、丁基甲醇、丙酮和甲苯中适当的选择。
形成内电极层的浆料是通过将导电材料与有机载体混合而获得。这里所使用的导电材料包括导体例如前面所述的导电金属和合金，以及可以通过烧制转化成这些导体的各种化合物，例如氧化物、有机金属化合物和树脂酸盐。有机载体已经在前面提到。适当浆料的例子是Ferro公司的EL51-012镍浆料。通过与形成内电极层的浆料的同样方法来制备形成外电极的浆料。
对于有机载体在前面所述的各种浆料中的含量没有特别的限制。通常浆料含有大约1～5质量％的粘合剂和大约10～50质量％的有机溶剂。如果需要的话，各种浆料中还可以含有其它的添加物例如分散剂、增塑剂、介电化合物和绝缘化合物。优选这些添加物的含量为最多大约10质量％。
可以由形成绝缘层的浆料和形成内电极层的浆料来制备毛坯芯片。使用印制方法时，交替将浆料以薄片形式印制到一个聚酯膜上，例如聚乙烯对苯二酸盐(PET)，将薄片的叠层切成预定的形状并将其与基质分离，制备得到毛坯芯片。压片方法同样有效，其中由形成绝缘层的浆料形成毛坯薄片，在各自毛坯薄片上印制形成内电极层的浆料，并层叠印制的毛坯薄片，从而制备毛坯芯片。然后从毛坯芯片中去除粘合剂并烧制。粘合剂的去除可以在通常条件下进行，优选下面的条件，其中内电极层由贱金属导体例如镍和镍合金形成：
加热速率：0.01℃～20℃/小时，更优选的是0.03～0.1℃/小时；
保持温度：150～300℃，更优选的是250℃；
保持时间：30分钟～700分钟，更优选200分钟；和
氛围：空气。
然后，在根据形成内电极层的浆料中导体的类型所确定的氛围中对毛坯芯片进行烧制。如果内电极层是由贱金属例如镍和镍合金形成的，烧制氛围可以是10-8～10-12大气压(atm)的氧分压。应该避免极端低的氧分压，因为在这种低压下，导体会被非正常烧结并可能与绝缘层分离。在上述范围的氧分压下，内电极层可能被氧化。
为了进行烧制，优选将芯片在大约800℃～大约1200℃的温度下，更优选900℃～1100℃的温度下，保持大约两个小时，以确保所有残留的粘合剂都被去除掉。接下来，将温度提高到大约1100℃～大约1400℃的最高温度，更优选大约1200℃～大约1300℃的温度。保持温度大约两个小时以增强致密化。低于上述范围的温度会导致致密化不充分，而高于上述范围的温度会导致不好的直流偏压性能。优选的烧制氛围是还原氛围。示例氛围的气体是潮湿的N2或者潮湿的N2和H2气体的混合物。其余的烧结条件优选如下：
加热速率：50℃～500℃/小时，更优选的是200℃～300℃/小时；
保持时间：1/2～8小时，更优选1～3个小时；和
冷却速率：50℃～500℃/小时，更优选200℃～300℃/小时。
在还原氛围中对电容器芯片进行烧制后，优选进行退火步骤。退火对于再氧化绝缘层是有效的，从而优化了陶瓷对介电击穿的抗性。在还原氛围中的烧结去除了绝缘材料中的氧气(O2)。再氧化对于绝缘层中引入限定量的氧是有效的，用以补偿在氧气不充足的氛围中进行烧制所形成的不可避免的氧空位。这些氧空位会使电子穿过绝缘体，这就降低了绝缘组合物的绝缘性能。因此，再氧化过程提高了绝缘电阻。
退火氛围可以具有氧分压为至少10-6atm，优选10-5～10-4atm。绝缘层在低于这个范围的氧分压下是不能被充分再氧化的，而内电极层可能在高于这个范围的氧分压下被氧化。
为了进行退火，优选将芯片保持在低于1200℃，更优选700℃～1100℃的温度下。低于这个范围的保持温度会更低程度地氧化绝缘层，进而导致较短的寿命。高于上述的温度范围会引起内电极层被氧化(导致被还原的电容)并与绝缘材料反应(导致较短的寿命)。可以仅仅通过加热和冷却来完成退火。这种情况下，保持温度等于加热的最高温度，保持时间是零。其余的退火条件优选如下：
保持时间：0～20小时，更优选2～10小时；和
冷却速率：50℃～500℃/小时，更优选100～300℃/小时。
优选的用于退火的氛围气体是氮气和空气的干燥混合物。
粘合剂的去除、烧制和退火可以连续进行也可以分别进行。如果连续进行，该方法包括以下步骤：去除粘合剂，只改变氛围而不冷却，提高温度到烧制温度，保持芯片在烧制温度下，降低温度到退火温度，在此温度下改变氛围，以及退火。
如果分别进行的话，在去除粘合剂和冷却后，在干燥或者潮湿的氮气中将芯片的温度提高到去除粘合剂的温度。然后改变氛围为还原氛围，并进一步提高温度以烧制。之后降低温度到退火温度，并再次改变氛围为干燥或者潮湿的氮气，接着继续冷却。替代的，一旦冷却下来，温度可以在氮气氛围中提高到退火温度。整个退火步骤可以在潮湿的氮气氛围中进行。
可以对所得到芯片在端面通过滚筒打光和喷砂打磨法进行抛光，例如，在对形成外电极的浆料进行印制或转移和烘干以形成外电极之前。对形成外电极的浆料的烧制可以在下述条件下进行：干燥的氮气氛围(大约10-6的氧分压)、大约600℃～800℃的温度，大约10分钟～1小时。
如果需要，可以通过镀层或者本领域已知的其它方法在外电极上形成衬垫。本发明的多层陶瓷芯片电容器可以设置在印制的电路板上，例如通过焊接。在本发明的多层陶瓷芯片电容器的运行过程中，对绝缘层和重叠交流(AC)元件施加直流电场，至少为0.02V/μm，经常至少0.2V/μm，更经常为至少0.5V/μm，通常最高为5V/μm。即使施加这样的电场，电容器也表现出其电容对时间最小的变化。
实施例1
提供下面的实施例是为了说明本发明优选的方面，而不是为了限制本发明的范围。三个分别定义为样品1、2和3的绝缘组合物是通过混合适量的BaTiO3、Mn3O4、Y2O3、Ho2O3和CaCO3来形成的，质量百分比如下表1所示。粉末具有0.5～1μm的平均粒径。加入一种Ferro Corporation of Cleveland，Ohio公司销售的玻璃料EG0024到绝缘粉末的混合物中。玻璃料具有下面组成：
SiO2：42.1质量％；
B2O3：28.9质量％；
Al2O3：13.3质量％；
MgO：12.2质量％；和
CaO：3.5质量％。
加入玻璃料后，对带有粘合剂体系的所选择的组分进行湿磨，该粘合剂体系包含由Ferro Corporation of Cleveland，Ohio销售商品名为PVB的聚乙烯丁醇。每100克的粉末中加入28.8克的粘合剂以制备条带(tape)。在球磨机上对组分进行湿磨24小时，接着将所形成的湿片覆盖在聚酯膜上以形成绝缘毛坯条带。绝缘毛坯条带的厚度被压制成5～15μm的范围内，其取决于对其所进行的特殊检测。使用由Ferro Corporation of Cleveland，Ohio销售商品名为EL51-012镍浆料，采用传统的筛网印制(screen printing)方法将镍电极印制在干的绝缘毛坯条带上。
通常，将总共10薄片在压力下进行层叠并粘合，然后加热以形成毛坯芯片。切割成1206元件尺寸(1206 part size)后，将毛坯芯片加热以去除粘合剂并接着在Tokai Konetsu Kyogo批次处理窑(batch kiln)中进行烧制和再氧化，按照下面的工艺条件进行，获得多层电容器芯片：
去除粘合剂：
加热速率：0.03～2℃/小时；
保持温度：250℃；
保持时间：200分钟；
氛围：空气。
烧制：
加热速率：3.3℃/分钟；
保持温度：1000℃；
保持时间：2小时；
加热速率：3.3℃/分钟；
保持温度：最高1275℃；
保持时间：2小时；
氛围：通常氧分压为10-9的氛围；
冷却速率：5℃/分钟。
再氧化：
保持温度：1000℃；
保持时间：3～9小时；
氛围：6～60ppm；和
冷却速率：2℃/分钟。
为了使氛围气体潮湿，使用了水温为25℃～35℃湿润剂。这样得到的芯片是被抛成圆角的。形成外电极的铜浆料，可以是由Ferro Corporation ofCleveland，Ohio得到的TM50-081，施加在末端表面，并在干燥的氮气氛围中，775℃温度下烧制大约70分钟以形成外电极。这样制成的多层电容器具有3.2mm×1.6mm以及可变厚度的体积。绝缘层为3～11□m，内镍电极层是1.5～2.5μm厚。每个样品绝缘层的组合物在表1中示出。
表1
绝缘组合物
来自粉末(质量％) 来自玻璃料(质量％)
| 样品 | BaTiO3 | Mn3O4 | Y2O3 | Ho2O3 | CaCO3 | SiO2 | B2O3 | Al2O3 | MgO | CaO |
| 1 | 99 | 0.336 | 0.198 | 0.132 | 0.199 | 0.057 | 0.039 | 0.018 | 0.016 | 0.005 |
| 2 | 98.75 | 0.421 | 0.247 | 0.165 | 0.249 | 0.071 | 0.049 | 0.022 | 0.021 | 0.006 |
| 3 | 98.5 | 0.505 | 0.296 | 0.198 | 0.299 | 0.085 | 0.058 | 0.027 | 0.025 | 0.007 |
按照EIA规范中所介绍的标准程序来检测绝缘材料的绝缘性能。表2描述了每个样品的绝缘性能。
表2
绝缘性能
绝缘性能
TCC(％)
| 样品 | ε | tan δ(％) | RC(ΩF)25℃ | RC(ΩF)125℃ | DBV(V/μm) | 老化(％/秒) | HALT(150C/40V/μm) | -55℃ | -125℃ |
| 1 | 4000 | 2.7 | 1150 | 35 | 60 | 5 | 1.8 | -15 | -2 |
| 2 | 3500 | 2 | 850 | 25 | 60 | 3.6 | 3.5 | -13 | -7 |
| 3 | 3200 | 1.7 | 700 | 17 | 60 | 2.8 | 10.6 | -10 | -9 |
所有的样品都符合电容特征的X7R温度系数。在本发明范围内样品的绝缘电阻是高的，并且样品的特征寿命在150℃和40V/μm的高度加速条件下持续了总共10个小时。通过提高添加剂混合物的含量，样品失效的平均时间延长到了更长的时间。
实施例2
将实施例1中样品2的绝缘组合物制成毛坯芯片，其分别在1275～1325℃范围内的各种烧制温度和10-8～10-12大气压的氧分压氛围中进行烧制。图2～图5表示实施例1中样品2的绝缘组合物所形成的毛坯芯片的绝缘性能作为烧制温度和氛围函数的图表。如图2所示，在烧制温度下，介电常数保持在3500以上。图3表示耗散系数作为烧制条件的函数。耗散系数在1275～1325℃范围内的烧制温度和10-8～10-11大气压的氧分压中保持在4％以下。
图4和图5表示在-55℃和125℃电容变化作为操作温度和氛围的函数，并表示了非常稳定的TCC特征。在整个烧制温度和氛围中，-55℃下电容变化在0～10％之间，125℃下电容变化小于5％。绝缘性能、超细微结构和宽范围的可操作性显示了本发明的绝缘组合物非常适合绝缘层厚度小于3μm、活性层数大于300层的高电容多层电容器的应用。
本领域的技术人员可以很明显的对本发明的组合物和方法进行各种改进和变化而不离开本发明的主题或者范围。因此，本发明覆盖那些在随附权利要求和其等价的范围内的本发明的改进和变化。
Claims (16)
1.一种组合物，用于形成多层陶瓷芯片电容器的绝缘材料，包括下列物质的烧结混合物：
BaTiO3大约99.80～大约90.00质量％；
Mn3O4大约0.067～大约3.364质量％；
Y2O3大约0.040～大约1.976质量％；
Ho2O3大约0.026～大约1.320质量％；
CaCO3大约0.040～大约1.993质量％；
SiO2大约0.011～大约0.567质量％；
B2O3大约0.008～大约0.389质量％；
Al2O3大约0.004～大约0.179质量％；
MgO大约0.003～大约0.164质量％；以及
CaO大约0.001～大约0.047质量％。
2.权利要求1所述的组合物，其中在烧结前，绝缘材料包括由BaTiO3、Mn3O4、Y2O3、Ho2O3和CaCO3粉末与包括SiO2、B2O3、Al2O3、MgO和CaO的玻璃料所组成的混合物。
3.一种多层陶瓷芯片电容器，其包含绝缘材料和包括镍的内电极材料的交替层叠层，该绝缘材料包括下列物质的烧结混合物：
BaTiO3大约99.80～大约90.00质量％；
Mn3O4大约0.067～大约3.364质量％；
Y2O3大约0.040～大约1.976质量％；
Ho2O3大约0.026～大约1.320质量％；
CaCO3大约0.040～大约1.993质量％；
SiO2大约0.011～大约0.567质量％；
B2O3大约0.008～大约0.389质量％；
Al2O3大约0.004～大约0.179质量％；
MgO大约0.003～大约0.164质量％；以及
CaO大约0.001～大约0.047质量％。
4.权利要求3所述的多层陶瓷芯片电容器，其中在烧结前，绝缘材料包括由BaTiO3、Mn3O4、Y2O3、Ho2O3和CaCO3粉末与包括SiO2、B2O3、Al2O3、MgO和CaO的玻璃料所组成的混合物。
5.权利要求4所述的多层陶瓷芯片电容器，其中绝缘材料是通过对BaTiO3、Mn3O4、Y2O3、Ho2O3和CaCO3粉末与玻璃料和粘合剂体系进行湿磨而制备。
6.权利要求5所述的多层陶瓷芯片电容器，其中粘合剂体系包括聚乙烯丁醇。
7.权利要求3所述的多层陶瓷芯片电容器，其中内电极材料包括一种含有主要部分为镍和次要部分为铜的合金。
8.权利要求3所述的多层陶瓷芯片电容器，其中绝缘材料具有大约3200～大约4000的介电常数。
9.权利要求3所述的多层陶瓷芯片电容器，其中BaTiO3、Mn3O4、Y2O3、Ho2O3以及CaCO3粉末的粒径为大约0.5μm～大约1μm。
10.权利要求3所述的多层陶瓷芯片电容器，其中绝缘材料含有：
BaTiO3大约99.80～大约90.00质量％；
Mn3O4大约0.067～大约3.364质量％；
Y2O3大约0.040～大约1.976质量％；
Ho2O3大约0.026～大约1.320质量％；
CaCO3大约0.040～大约1.993质量％；
SiO2大约0.011～大约0.567质量％；
B2O3大约0.008～大约0.389质量％；
Al2O3大约0.004～大约0.179质量％；
MgO大约0.003～大约0.164质量％；以及
CaO大约0.001～大约0.047质量％。
11.一种具有X7R特征的多层陶瓷芯片电容器的制备方法，其包括步骤：
提供包括下列物质的绝缘材料：
BaTiO3大约99.80～大约90.00质量％；
Mn3O4大约0.067～大约3.364质量％；
Y2O3大约0.040～大约1.976质量％；
Ho2O3大约0.026～大约1.320质量％；
CaCO3大约0.040～大约1.993质量％；
SiO2大约0.011～大约0.567质量％；
B2O3大约0.008～大约0.389质量％；
Al2O3大约0.004～大约0.179质量％；
MgO大约0.003～大约0.164质量％；以及
CaO大约0.001～大约0.047质量％；
形成所述绝缘材料与含镍的内电极材料的交替层叠层；
施加热和压力以形成毛坯芯片；和
由所述毛坯芯片形成电容器。
12.权利要求11中所述的具有X7R特征的多层陶瓷芯片电容器的制备方法，其中内电极材料包含一种含主要部分为镍和次要部分为铜的合金。
13.权利要求11中所述的具有X7R特征的多层陶瓷芯片电容器的制备方法，其中在烧结前，绝缘材料包含由BaTiO3、Mn3O4、Y2O3、Ho2O3和CaCO3粉末与包括SiO2、B2O3、Al2O3、MgO和CaO的玻璃料所组成的混合物。
14.权利要求11中所述的具有X7R特征的多层陶瓷芯片电容器的制备方法，还包括含铜的外电极。
15.权利要求11中所述的具有X7R特征的多层陶瓷芯片电容器的制备方法，其中绝缘材料保持大约3200～大约4000的介电常数。
16.权利要求11中所述的具有X7R特征的多层陶瓷芯片电容器的制备方法，其中BaTiO3、Mn3O4、Y2O3、Ho2O3和CaCO3粉末的粒径为大约0.5μm～大约1μm。
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| US10/440,051 US6828266B1 (en) | 2003-05-16 | 2003-05-16 | X7R dielectric composition |
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| CN107098695A (zh) * | 2017-05-27 | 2017-08-29 | 武汉理工大学 | 一种高击穿强度的x7r电容器陶瓷材料及其制备方法 |
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| US7161795B1 (en) | 2005-09-26 | 2007-01-09 | Ferro Corporation | COG dielectric composition for use with copper electrodes |
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| JP4299827B2 (ja) * | 2005-12-05 | 2009-07-22 | Ｔｄｋ株式会社 | 誘電体磁器組成物、電子部品および積層セラミックコンデンサ |
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| US7521390B2 (en) * | 2007-03-05 | 2009-04-21 | Ferro Corporation | Ultra low temperature fixed X7R and BX dielectric ceramic composition and method of making |
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| CN103594139A (zh) * | 2012-08-17 | 2014-02-19 | 三星电机株式会社 | 金属粉末、电子元件及其制造方法 |
| CN107098695A (zh) * | 2017-05-27 | 2017-08-29 | 武汉理工大学 | 一种高击穿强度的x7r电容器陶瓷材料及其制备方法 |
| CN107098695B (zh) * | 2017-05-27 | 2020-10-16 | 武汉理工大学 | 一种高击穿强度的x7r电容器陶瓷材料及其制备方法 |
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| US6828266B1 (en) | 2004-12-07 |
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| CN100355698C (zh) | 2007-12-19 |
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| C06 | Publication | ||
| PB01 | Publication | ||
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Granted publication date: 20071219 |