CN1777974B - 通过局部晶片温度控制对晶片上的临界尺寸变化的补偿 - Google Patents

通过局部晶片温度控制对晶片上的临界尺寸变化的补偿 Download PDF

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Publication number
CN1777974B
CN1777974B CN2004800096795A CN200480009679A CN1777974B CN 1777974 B CN1777974 B CN 1777974B CN 2004800096795 A CN2004800096795 A CN 2004800096795A CN 200480009679 A CN200480009679 A CN 200480009679A CN 1777974 B CN1777974 B CN 1777974B
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CN
China
Prior art keywords
wafer
etching
precalculated position
wafers
material wafers
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Expired - Fee Related
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CN2004800096795A
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English (en)
Chinese (zh)
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CN1777974A (zh
Inventor
罗伯特·J·斯泰格
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Lam Research Corp
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Lam Research Corp
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Publication of CN1777974A publication Critical patent/CN1777974A/zh
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Publication of CN1777974B publication Critical patent/CN1777974B/zh
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D99/00—Subject matter not provided for in other groups of this subclass
    • F27D99/0001—Heating elements or systems
    • F27D99/0006—Electric heating elements or system
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
    • F27B5/06—Details, accessories or equipment specially adapted for furnaces of these types
    • F27B5/14—Arrangements of heating devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D19/00—Arrangements of controlling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D21/00—Arrangement of monitoring devices; Arrangement of safety devices
    • F27D21/0014—Devices for monitoring temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Control Of Temperature (AREA)
  • Constitution Of High-Frequency Heating (AREA)
CN2004800096795A 2003-02-27 2004-02-12 通过局部晶片温度控制对晶片上的临界尺寸变化的补偿 Expired - Fee Related CN1777974B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/376,498 2003-02-27
US10/376,498 US6770852B1 (en) 2003-02-27 2003-02-27 Critical dimension variation compensation across a wafer by means of local wafer temperature control
PCT/US2004/004134 WO2004077505A2 (en) 2003-02-27 2004-02-12 Critical dimension variation compensation across a wafer by means of local wafer temperature control

Publications (2)

Publication Number Publication Date
CN1777974A CN1777974A (zh) 2006-05-24
CN1777974B true CN1777974B (zh) 2011-02-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2004800096795A Expired - Fee Related CN1777974B (zh) 2003-02-27 2004-02-12 通过局部晶片温度控制对晶片上的临界尺寸变化的补偿

Country Status (10)

Country Link
US (1) US6770852B1 (https=)
EP (1) EP1599891B1 (https=)
JP (3) JP2006519497A (https=)
KR (1) KR101047823B1 (https=)
CN (1) CN1777974B (https=)
AT (1) ATE480003T1 (https=)
DE (1) DE602004028910D1 (https=)
IL (1) IL170511A (https=)
TW (1) TWI338917B (https=)
WO (1) WO2004077505A2 (https=)

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) * 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
EP1303792B1 (en) 2000-07-16 2012-10-03 Board Of Regents, The University Of Texas System High-resolution overlay alignement methods and systems for imprint lithography
AU2001277907A1 (en) 2000-07-17 2002-01-30 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
KR101031528B1 (ko) 2000-10-12 2011-04-27 더 보드 오브 리전츠 오브 더 유니버시티 오브 텍사스 시스템 실온 저압 마이크로- 및 나노- 임프린트 리소그래피용템플릿
US20050211385A1 (en) 2001-04-30 2005-09-29 Lam Research Corporation, A Delaware Corporation Method and apparatus for controlling spatial temperature distribution
JP4549022B2 (ja) 2001-04-30 2010-09-22 ラム リサーチ コーポレイション ワーク支持体の表面を横切る空間温度分布を制御する方法および装置
US6964793B2 (en) 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US7037639B2 (en) 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US7019819B2 (en) * 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7027156B2 (en) 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7071088B2 (en) 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6980282B2 (en) * 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
TW200500811A (en) * 2002-12-13 2005-01-01 Molecular Imprints Inc Magnification correction employing out-of-plane distortion of a substrate
US7452574B2 (en) 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7186656B2 (en) * 2004-05-21 2007-03-06 Molecular Imprints, Inc. Method of forming a recessed structure employing a reverse tone process
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7150622B2 (en) * 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7090716B2 (en) 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7018855B2 (en) * 2003-12-24 2006-03-28 Lam Research Corporation Process controls for improved wafer uniformity using integrated or standalone metrology
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7566181B2 (en) * 2004-09-01 2009-07-28 Tokyo Electron Limited Controlling critical dimensions of structures formed on a wafer in semiconductor processing
US7252777B2 (en) * 2004-09-21 2007-08-07 Molecular Imprints, Inc. Method of forming an in-situ recessed structure
US7205244B2 (en) 2004-09-21 2007-04-17 Molecular Imprints Patterning substrates employing multi-film layers defining etch-differential interfaces
US7241395B2 (en) * 2004-09-21 2007-07-10 Molecular Imprints, Inc. Reverse tone patterning on surfaces having planarity perturbations
US7547504B2 (en) 2004-09-21 2009-06-16 Molecular Imprints, Inc. Pattern reversal employing thick residual layers
US7041604B2 (en) * 2004-09-21 2006-05-09 Molecular Imprints, Inc. Method of patterning surfaces while providing greater control of recess anisotropy
US20070231421A1 (en) 2006-04-03 2007-10-04 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US7292326B2 (en) * 2004-11-30 2007-11-06 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
US7630067B2 (en) 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
US8038796B2 (en) * 2004-12-30 2011-10-18 Lam Research Corporation Apparatus for spatial and temporal control of temperature on a substrate
US20060222975A1 (en) * 2005-04-02 2006-10-05 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated optical metrology and lithographic process track for dynamic critical dimension control
US7851234B2 (en) 2007-11-29 2010-12-14 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for enhanced control of copper trench sheet resistance uniformity
US20120216747A1 (en) * 2009-11-02 2012-08-30 Ligadp Co., Ltd. Chemical vapor deposition device and temperature control method of chemical vapor deposition device
KR101365202B1 (ko) 2009-11-02 2014-02-20 엘아이지에이디피 주식회사 화학기상증착장치의 온도제어방법
JP6066728B2 (ja) * 2009-12-15 2017-01-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ Ｃｄの均一性を向上させるための基板温度調整を行う方法及びプラズマエッチングシステム
US8410393B2 (en) 2010-05-24 2013-04-02 Lam Research Corporation Apparatus and method for temperature control of a semiconductor substrate support
JP5640894B2 (ja) * 2011-05-26 2014-12-17 東京エレクトロン株式会社 温度測定装置、温度測定方法、記憶媒体及び熱処理装置
US8949057B1 (en) 2011-10-27 2015-02-03 Kla-Tencor Corporation Method for compensating for wafer shape measurement variation due to variation of environment temperature
US8852964B2 (en) 2013-02-04 2014-10-07 Lam Research Corporation Controlling CD and CD uniformity with trim time and temperature on a wafer by wafer basis
CN104008957B (zh) * 2013-02-22 2016-10-05 中微半导体设备(上海)有限公司 基片补偿刻蚀的方法
WO2015020813A1 (en) * 2013-08-06 2015-02-12 Applied Materials, Inc. Locally heated multi-zone substrate support
CN104750140B (zh) * 2013-12-31 2017-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔加热控制方法及装置
US9378992B2 (en) * 2014-06-27 2016-06-28 Axcelis Technologies, Inc. High throughput heated ion implantation system and method
WO2016014790A1 (en) * 2014-07-23 2016-01-28 Georgia Tech Research Corporation Electrically short antennas with enhanced radiation resistance
JP6806704B2 (ja) 2015-05-22 2021-01-06 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 方位角方向に調整可能なマルチゾーン静電チャック
JP6212092B2 (ja) * 2015-10-02 2017-10-11 東京エレクトロン株式会社 基板処理システム、フォーカスリングの温度制御方法及び基板のエッチング方法
US9466538B1 (en) 2015-11-25 2016-10-11 Globalfoundries Inc. Method to achieve ultra-high chip-to-chip alignment accuracy for wafer-to-wafer bonding process
US9966316B2 (en) 2016-05-25 2018-05-08 Toshiba Memory Corporation Deposition supporting system, depositing apparatus and manufacturing method of a semiconductor device
US10522377B2 (en) * 2016-07-01 2019-12-31 Lam Research Corporation System and method for substrate support feed-forward temperature control based on RF power
JP6817168B2 (ja) * 2017-08-25 2021-01-20 東京エレクトロン株式会社 被処理体を処理する方法
KR102487551B1 (ko) * 2017-09-13 2023-01-11 삼성전자주식회사 플라즈마 식각 장치를 이용한 반도체 소자의 제조 방법
JP7066438B2 (ja) 2018-02-13 2022-05-13 東京エレクトロン株式会社 冷却システム
CN109473381A (zh) * 2018-10-31 2019-03-15 上海华力微电子有限公司 湿法刻蚀清洗设备和方法
US11367645B2 (en) 2019-03-13 2022-06-21 Applied Materials, Inc. Temperature tunable multi-zone electrostatic chuck
US11533783B2 (en) * 2019-07-18 2022-12-20 Applied Materials, Inc. Multi-zone heater model-based control in semiconductor manufacturing
CN110752171B (zh) * 2019-11-01 2022-07-29 长江存储科技有限责任公司 晶圆弯曲度调整装置及方法
US12531217B2 (en) * 2021-03-31 2026-01-20 Taiwan Semiconductor Manufacturing Company, Ltd. Laser array system for improved local CD uniformity
CN116153768A (zh) * 2021-11-22 2023-05-23 联华电子股份有限公司 晶片处理方法
KR20250009953A (ko) 2023-07-10 2025-01-20 주식회사 히타치하이테크 에칭 시스템 및 에칭 방법
WO2025187424A1 (ja) * 2024-03-04 2025-09-12 東京エレクトロン株式会社 基板処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
WO2001029873A1 (en) * 1999-10-20 2001-04-26 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518848A (en) 1981-05-15 1985-05-21 Gca Corporation Apparatus for baking resist on semiconductor wafers
US5059770A (en) * 1989-09-19 1991-10-22 Watkins-Johnson Company Multi-zone planar heater assembly and method of operation
JP3238925B2 (ja) 1990-11-17 2001-12-17 株式会社東芝 静電チャック
US6008133A (en) * 1991-04-04 1999-12-28 Hitachi, Ltd. Method and apparatus for dry etching
EP0511448A1 (en) * 1991-04-30 1992-11-04 International Business Machines Corporation Method and apparatus for in-situ and on-line monitoring of a trench formation process
US5294778A (en) 1991-09-11 1994-03-15 Lam Research Corporation CVD platen heater system utilizing concentric electric heating elements
JPH07201822A (ja) * 1993-12-28 1995-08-04 Hiroshima Nippon Denki Kk ドライエッチング装置
JPH0845909A (ja) * 1994-07-26 1996-02-16 Sony Corp 試料台
JP3246707B2 (ja) * 1994-07-27 2002-01-15 シャープ株式会社 強誘電体膜のエッチング方法
US5795493A (en) * 1995-05-01 1998-08-18 Motorola, Inc. Laser assisted plasma chemical etching method
US5854468A (en) 1996-01-25 1998-12-29 Brooks Automation, Inc. Substrate heating apparatus with cantilevered lifting arm
JP3537269B2 (ja) 1996-05-21 2004-06-14 アネルバ株式会社 マルチチャンバースパッタリング装置
JP3703918B2 (ja) * 1996-09-20 2005-10-05 株式会社東芝 パターン形成方法
US5846375A (en) * 1996-09-26 1998-12-08 Micron Technology, Inc. Area specific temperature control for electrode plates and chucks used in semiconductor processing equipment
JP3665826B2 (ja) 1997-05-29 2005-06-29 Ｓｍｃ株式会社 基板熱処理装置
JPH1154482A (ja) * 1997-08-05 1999-02-26 Hitachi Ltd 半導体装置の製造方法および装置ならびにワークの処理方法
DE69842191D1 (de) 1997-11-05 2011-05-05 Tokyo Electron Ltd Halbleiterscheibenhaltevorrichtung
US6046116A (en) * 1997-11-19 2000-04-04 Tegal Corporation Method for minimizing the critical dimension growth of a feature on a semiconductor wafer
JPH11162697A (ja) * 1997-11-28 1999-06-18 Mc Electronics Kk プラズマ生成用の螺旋共振装置
JP3477062B2 (ja) 1997-12-26 2003-12-10 京セラ株式会社 ウエハ加熱装置
US6020262A (en) 1998-03-06 2000-02-01 Siemens Aktiengesellschaft Methods and apparatus for chemical mechanical planarization (CMP) of a semiconductor wafer
US6310755B1 (en) 1999-05-07 2001-10-30 Applied Materials, Inc. Electrostatic chuck having gas cavity and method
US6225639B1 (en) * 1999-08-27 2001-05-01 Agere Systems Guardian Corp. Method of monitoring a patterned transfer process using line width metrology
JP2001093885A (ja) * 1999-09-22 2001-04-06 Olympus Optical Co Ltd エッチング監視装置
JP3774094B2 (ja) * 1999-12-02 2006-05-10 株式会社日立製作所 膜厚、加工深さ測定装置及び成膜加工方法
JP2001203257A (ja) 2000-01-20 2001-07-27 Sumitomo Electric Ind Ltd 半導体製造装置用ウェハ保持体
JP2002048519A (ja) * 2000-08-03 2002-02-15 Toshiba Corp 段差測定方法とその装置、および半導体装置の製造方法
JP3817414B2 (ja) * 2000-08-23 2006-09-06 株式会社日立製作所 試料台ユニットおよびプラズマ処理装置
JP3872304B2 (ja) * 2001-03-07 2007-01-24 株式会社日立製作所 半導体製造装置および半導体製造方法
US6561706B2 (en) * 2001-06-28 2003-05-13 Advanced Micro Devices, Inc. Critical dimension monitoring from latent image
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
JP2006517077A (ja) * 2003-01-24 2006-07-13 ココ・コミュニケーションズ・コーポレーション 集中管理なしの、匿名の信頼しない当事者間のセキュア通信およびリソース共用の方法および装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
WO2001029873A1 (en) * 1999-10-20 2001-04-26 Advanced Micro Devices, Inc. Method and apparatus for controlling wafer uniformity using spatially resolved sensors

Also Published As

Publication number Publication date
IL170511A (en) 2010-04-15
JP2006519497A (ja) 2006-08-24
ATE480003T1 (de) 2010-09-15
JP2013077859A (ja) 2013-04-25
JP2015130539A (ja) 2015-07-16
EP1599891A2 (en) 2005-11-30
KR101047823B1 (ko) 2011-07-08
WO2004077505A3 (en) 2005-03-31
KR20050106457A (ko) 2005-11-09
CN1777974A (zh) 2006-05-24
JP5844757B2 (ja) 2016-01-20
US6770852B1 (en) 2004-08-03
WO2004077505A2 (en) 2004-09-10
DE602004028910D1 (de) 2010-10-14
TWI338917B (en) 2011-03-11
EP1599891B1 (en) 2010-09-01
TW200428505A (en) 2004-12-16

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