CN1755906A - 适用集成电路及发光二极管的封装方法 - Google Patents

适用集成电路及发光二极管的封装方法 Download PDF

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CN1755906A
CN1755906A CNA2004100802140A CN200410080214A CN1755906A CN 1755906 A CN1755906 A CN 1755906A CN A2004100802140 A CNA2004100802140 A CN A2004100802140A CN 200410080214 A CN200410080214 A CN 200410080214A CN 1755906 A CN1755906 A CN 1755906A
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integrated circuit
light emitter
emitter diode
suitable integrated
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CN100461354C (zh
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黄禄珍
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Mutual Pak Technology Co Ltd
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XIANGHU CO Ltd
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    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract

一种适用集成电路及发光二极管的封装方法，其流程依序为以一金属基板作为制程基板，并于基板上设置一线路，在金属基板上的线路表面形成数个金属凸块，在金属凸块上设置一导电主体，在该导电主体外部密封上一封胶，蚀刻金属基板底部以形成接脚，接着在金属基板底部非接脚部分涂布防焊油墨。借由上述技术手段，本发明可避免在IC晶圆或发光二极管晶粒上形成金属凸块的复杂制程而达到降低成本的功效，并可广泛应用于各种IC组件导电主体的封装而提高封装方法的实用性。

Description

适用集成电路及发光二极管的封装方法
技术领域
本发明涉及一种适用集成电路及发光二极管的封装方法。
背景技术
今日的半导体技术已广泛应用于人们生活所遇到的各种电子设备之中，举凡个人计算机、移动电话及自动提款机等，皆包含有以半导体等技术所制造的电路板或其它电子组件。
请参阅图5及图6，为一般传统的半导体集成电路IC(IntegratedCircuit)或发光二极管LED(Light Emitng Diode)的封装流程，其是在一金属导线架60、60a或铜箔基板上设置一晶片70俗称固晶或发光二极管晶粒70a，接着，在晶片70或晶粒70a与导线架60、60a上的针脚61、61a或是铜箔基板上的焊点之间打上焊线21，最后在晶片70或晶粒70a与焊线21的外部封上一层封胶72、72a，即完成封装程序。
请参阅图7至图9，关于集成电路的另一种封装方式为俗称的覆晶封装，其流程为在一晶片80表面形成数个金属凸块81，如图7所示；接着翻覆晶片80使其金属凸块81朝下而定位在一导线架或电路基板90或90a上相对应的数个针脚91或焊点上，最后在该晶片80的外部封上一层封胶95、95a。前述的覆晶封装方式可以避免因打线而造成晶片电感、阻抗或其散热性的降低，且相对第一种封装方式可降低成本并提高合格率。但覆晶封装方式仍具有如下的缺点：
1.金属凸块一般是以金或锡铅合金制造而成，其形成于晶片上的制程冗长且复杂，一般为配合此项制程，厂商必须额外另辟专业生产线且购置专用的制程设备。
2.晶片是由硅晶圆切割制造而成，其结构脆弱，故其上设置金属凸块时仍有损毁该晶片的可能性，某些类型的晶片更因为体积过小或厚度过薄而根本无法将金属凸块固定于其上，故现有覆晶封装方式的实用性仍有不足。
发明内容
为了克服现有集成电路及发光二极管的封装方式的高成本及实用性差等缺点，本发明提供一种适用于集成电路及发光二极管的封装方法，其可避免在集成电路之上形成金属凸块的复杂制程而达到降低成本的功效，并可广泛应用于各种集成电路及发光二极管的封装而提高封装制程的实用性。
本发明解决其技术问题所采用的技术方案是：
一种适用集成电路及发光二极管的封装方法，其特征在于，包括以下流程：以一金属基板作为制程基板，并于该基板上设置一线路；在各金属凸块外涂布一金属结合剂；在该金属凸块上设置一导电主体；在该导电主体外部密封上一封胶；蚀刻该金属基板底部以形成数个底部接脚；在该金属基板底部非接脚部分涂布一防焊油墨；对线路进行测试。
前述的适用集成电路及发光二极管的封装方法，其中在该金属基板上设置线路的方法为蚀刻该金属基板顶部，该金属基板上受蚀刻后的凹陷处用高分子介电材料填平，未受蚀刻处则形成该线路。
前述的适用集成电路及发光二极管的封装方法，其中当所述导电主体设置于金属凸块上时，导电主体上的数个金属接点是分别相对应于各金属凸块上，接着在导电主体底部与金属基板顶部之间填充一底层封胶。
前述的适用集成电路及发光二极管的封装方法，其中导电主体为一晶片。
前述的适用集成电路及发光二极管的封装方法，其中导电主体为一发光二极管晶粒。
前述的适用集成电路及发光二极管的封装方法，在形成底部接脚之后且在涂布该防焊油墨之前，在各底部接脚上涂布一镍或金层，接着在该金属基板底部的部分接脚处形成有一可避免逆电流或瞬间静电的线路保护电阻。
前述的适用集成电路及发光二极管的封装方法，其中底部封胶为透明状。
前述的适用集成电路及发光二极管的封装方法，其中金属凸块是以电镀方式形成于金属基板上。
前述的适用集成电路及发光二极管的封装方法，其中金属凸块是以印刷方式形成于金属基板上。
前述的适用集成电路及发光二极管的封装方法，其中金属结合剂为一银材料。
前述的适用集成电路及发光二极管的封装方法，其中金属结合剂为一银材料。
前述的适用集成电路及发光二极管的封装方法，其中金属结合剂为一锡材料。
前述的适用集成电路及发光二极管的封装方法，其中金属结合剂为一锡材料。
借由上述技术手段，本发明可避免在导电主体之上形成金属凸块的复杂制程而达到降低成本的功效，并可广泛应用于各种导电主体的封装而提高封装方法的实用性。
本发明的封装方法可适用于各类集成电路或发光二极管的封装，且线路保护电阻能有效避免逆电流或瞬间静电而提高集成电路或发光二极管的寿命。
附图说明
下面结合附图和实施例对本发明进一步说明。
图1A～D为本发明的部分流程图。
图2E～F为本发明接续图1所示流程的部分流程图。
图3G～H为本发明接续图2所示流程的部分流程图。
图4为本发明完成各流程后的平面剖视图。
图5为现有集成电路封装的平面视图。
图6为现有发光二极管封装的平面视图。
图7为现有集成电路与金属凸块的平面视图。
图8为现有覆晶型集成电路封装的平面视图。
图9为现有覆晶型集成电路封装的平面示意图。
图中标号说明：
10金属基板            101接脚
11高分子介电材料      12金属凸块
13金属结合剂          15导电主体
151金属接点           16底层封胶
17封胶                18镍或金
19线路保护电阻        20防焊油墨
60导线架              60a导线架
61针脚                61a针脚
70晶片                70a晶粒
72封胶                72a封胶
80晶片                81金属凸块
90导线架              90a晶片
91针脚
具体实施方式
请参阅图1，本发明一种适用于集成电路的封装方法包含有下列流程：
以一铜材料制成的金属基板10作为制程基板(请参阅图1A所示)；
蚀刻该金属基板10顶部，该金属基板10上受蚀刻后的凹陷处以一高分子介电材料11填平，未受蚀刻处则形成线路(请参阅图1B所示)；
以电镀或印刷的方式，该金属基板10上线路表面形成数个金属凸块12(请参阅图1C所示)；
在各金属凸块12外涂布一以银浆或锡膏所制成的金属结合剂13(请参阅图1D所示)；
在金属凸块21上设置一可为晶片IC或发光二极管LED晶粒的导电主体15，其中导电主体15上的数个金属接点151是分别相对应于各金属凸块21上，接着在导电主体15底部与金属基板10顶部之间填充一底层封胶16(Underfill)以增加导电主体15及金属基板10之间结构的稳固性(请参阅图2E所示)；
在该导电主体15外部密封上一封胶17，若该导电主体51为一发光二极管晶粒时，则该封胶17须为透明状(请参阅图2F所示)；
蚀刻该金属基板10底部以形成数个底部接脚101(请参阅图3G所示)；
在该金属基板10底部的接脚101上涂布一镍或金层18，接着在该金属基板10底部的部分接脚101处形成有一可避免逆电流或瞬间静电的线路保护电阻19，并接着在该金属基板10的非接脚101部分涂布一防焊油墨20(请参阅图3H所示)；
对线路进行测试。
前述适用集成电路的封装方法亦可适用于发光二极管的封装。
借由上述技术手段，本发明具有如下功效：
1.避免在集成电路或发光二极管之上形成金属凸块的复杂制程，厂商不须额外开辟生产线或购置专用的制程设备，这样可使集成电路或发光二极管封装成本降低。
2.本发明的封装方法因不须直接对集成电路或发光二极管晶粒等导电主体实施可能伤害该导电主体的措施，故较脆弱的晶片或晶粒结构也可利用本发明来进行封装流程，如此可达到于广泛应用于各类型集成电路或发光二极管的封装而提高封装方法的实用性。

Claims (13)

1.一种适用集成电路及发光二极管的封装方法，其特征在于，包括以下流程：
以一金属基板作为制程基板，并于该基板上设置一线路；
在各金属凸块外涂布一金属结合剂；
在该金属凸块上设置一导电主体；
在该导电主体外部密封上一封胶；
蚀刻该金属基板底部以形成数个底部接脚；
在该金属基板底部非接脚部分涂布一防焊油墨；
对线路进行测试。
2.根据权利要求1所述的适用集成电路及发光二极管的封装方法，其特征在于所述在该金属基板上设置线路的方法为蚀刻该金属基板顶部，该金属基板上受蚀刻后的凹陷处用高分子介电材料填平，未受蚀刻处则形成该线路。
3.根据权利要求2所述的适用集成电路及发光二极管的封装方法，其特征在于当所述导电主体设置于金属凸块上时，导电主体上的数个金属接点是分别相对应于各金属凸块上，接着在导电主体底部与金属基板顶部之间填充一底层封胶。
4.根据权利要求3所述的适用集成电路及发光二极管的封装方法，其特征在于所述导电主体为一晶片。
5.根据权利要求3所述的适用集成电路及发光二极管的封装方法，其特征在于所述导电主体为一发光二极管晶粒。
6.根据权利要求1到5中任一项所述的适用集成电路及发光二极管的封装方法，其特征在于在形成底部接脚之后且在涂布该防焊油墨之前，在各底部接脚上涂布一镍或金层，接着在该金属基板底部的部分接脚处形成有一可避免逆电流或瞬间静电的线路保护电阻。
7.根据权利要求5所述的适用集成电路及发光二极管的封装方法，其特征在于所述底部封胶为透明状。
8.根据权利要求6所述的适用集成电路及发光二极管的封装方法，其特征在于所述金属凸块是以电镀方式形成于金属基板上。
9.根据权利要求6所述的适用集成电路及发光二极管的封装方法，其特征在于所述金属凸块是以印刷方式形成于金属基板上。
10.根据权利要求8所述的适用集成电路及发光二极管的封装方法，其特征在于所述金属结合剂为一银材料。
11.根据权利要求9所述的适用集成电路及发光二极管的封装方法，其特征在于所述金属结合剂为一银材料。
12.根据权利要求8所述的适用集成电路及发光二极管的封装方法，其特征在于所述金属结合剂为一锡材料。
13.根据权利要求9所述的适用集成电路及发光二极管的封装方法，其特征在于所述金属结合剂为一锡材料。
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CN101599474B (zh) * 2008-06-02 2011-04-13 相丰科技股份有限公司 集成电路模块及其制造方法
CN101567323B (zh) * 2009-05-27 2012-07-25 深圳市蓝科电子有限公司 一种显示屏用三基色发光二极管的制造方法
CN105428495A (zh) * 2014-09-02 2016-03-23 展晶科技(深圳)有限公司 发光二极管封装体及其制造方法
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CN101599474B (zh) * 2008-06-02 2011-04-13 相丰科技股份有限公司 集成电路模块及其制造方法
CN101567323B (zh) * 2009-05-27 2012-07-25 深圳市蓝科电子有限公司 一种显示屏用三基色发光二极管的制造方法
CN105428495A (zh) * 2014-09-02 2016-03-23 展晶科技(深圳)有限公司 发光二极管封装体及其制造方法
CN107342356A (zh) * 2017-07-06 2017-11-10 庞绮琪 提高抗浪涌电流能力的led封装结构
WO2020133770A1 (zh) * 2018-12-28 2020-07-02 武汉华星光电技术有限公司 背光模组及显示装置

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