CN1753962A - 可调控的去除阻隔物的抛光浆料 - Google Patents
可调控的去除阻隔物的抛光浆料 Download PDFInfo
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- CN1753962A CN1753962A CNA2004800052903A CN200480005290A CN1753962A CN 1753962 A CN1753962 A CN 1753962A CN A2004800052903 A CNA2004800052903 A CN A2004800052903A CN 200480005290 A CN200480005290 A CN 200480005290A CN 1753962 A CN1753962 A CN 1753962A
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- 239000002002 slurry Substances 0.000 title claims abstract description 88
- 230000004888 barrier function Effects 0.000 title claims description 28
- 238000005498 polishing Methods 0.000 title claims description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 239000008139 complexing agent Substances 0.000 claims abstract description 9
- 239000003112 inhibitor Substances 0.000 claims abstract description 9
- 239000012535 impurity Substances 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 24
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 8
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 6
- 239000008187 granular material Substances 0.000 claims description 6
- 230000002427 irreversible effect Effects 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 13
- 239000002245 particle Substances 0.000 abstract description 8
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000007800 oxidant agent Substances 0.000 abstract description 2
- 229920000036 polyvinylpyrrolidone Polymers 0.000 abstract 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 abstract 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 18
- 229910010271 silicon carbide Inorganic materials 0.000 description 18
- 229960001866 silicon dioxide Drugs 0.000 description 17
- 235000012239 silicon dioxide Nutrition 0.000 description 17
- 239000010949 copper Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 9
- 239000000084 colloidal system Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000012876 topography Methods 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 5
- 238000001556 precipitation Methods 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000013543 active substance Substances 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 239000012964 benzotriazole Substances 0.000 description 3
- 230000002209 hydrophobic effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 238000007790 scraping Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- WHBMMWSBFZVSSR-UHFFFAOYSA-N 3-hydroxybutyric acid Chemical compound CC(O)CC(O)=O WHBMMWSBFZVSSR-UHFFFAOYSA-N 0.000 description 2
- BDCLDNALSPBWPQ-UHFFFAOYSA-N 3-oxohexanoic acid Chemical compound CCCC(=O)CC(O)=O BDCLDNALSPBWPQ-UHFFFAOYSA-N 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 150000003851 azoles Chemical class 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- CUBCNYWQJHBXIY-UHFFFAOYSA-N benzoic acid;2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1.OC(=O)C1=CC=CC=C1O CUBCNYWQJHBXIY-UHFFFAOYSA-N 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002362 mulch Substances 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical class [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 235000014653 Carica parviflora Nutrition 0.000 description 1
- 150000000703 Cerium Chemical class 0.000 description 1
- 241000243321 Cnidaria Species 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- YLXPKHUZFDMSLX-UHFFFAOYSA-N [NH4+].[Cl-].OC(=O)CC(O)(C(O)=O)CC(O)=O Chemical compound [NH4+].[Cl-].OC(=O)CC(O)(C(O)=O)CC(O)=O YLXPKHUZFDMSLX-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 235000003704 aspartic acid Nutrition 0.000 description 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 description 1
- 229950004394 ditiocarb Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 210000001951 dura mater Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 229940074391 gallic acid Drugs 0.000 description 1
- 235000004515 gallic acid Nutrition 0.000 description 1
- 229950006191 gluconic acid Drugs 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 1
- APLYTANMTDCWTA-UHFFFAOYSA-L magnesium;phthalate Chemical compound [Mg+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O APLYTANMTDCWTA-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/001—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as supporting member
- B24D3/002—Flexible supporting members, e.g. paper, woven, plastic materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
一种用来对半导体基材进行化学机械平坦化的水性浆料。所述浆液包括按重量百分数计0.1-25的氧化剂、0.1-20的平均粒径小于200nm的二氧化硅颗粒、0.005-0.8的用于包覆二氧化硅颗粒的聚乙烯基吡咯烷酮、0.01-10的抑制剂、0.001-10的络合剂和余量的水以及随附杂质,所述水性浆料的pH至少为7。
Description
背景技术
芯片制造工艺中引入新的低k和超低k介电质给化学机械平坦化(CMP)方法带来了新的挑战。由于低k和超低k材料的机械强度相对较低,CMP过程中施加的机械力可能会使低k膜破碎或从晶片基材上剥离。CMP正在朝采用较小的向下力也即等于小于3psi(20.7kPa)的力的设备发展。操作这种采用较小的向下力的抛光设备需要抛光浆料来产生较大的材料去除速率,以便获得可以接受的晶片产率。
浆料制造厂家面临的另一个挑战是,现有的低k/超低k材料的集成结构差异极大,而且该结构很大程度取决于用户具体目标。有些相对简单的集成电路使用常规的对介电质的选择性不高的CMP浆料。尽管这些浆料有良好的表面形貌修整能力,但是它们容易使介电质和金属的过度损失。除了这个问题以外,由于金属沟渠/通路结构的纵横比很高,在阻隔物CMP过程中,一些集成电路布图需要浆料的选择性更高以降低金属的损失。另外,集成电路布图可能包括不同膜的覆盖层,使情况更加复杂。
除了复杂集成电路布图带来的难题以外,大部分超低k材料是多孔物质,容易被浆料污染。将一种多孔覆盖层沉积在多孔介电质的表面,能防止浆料污染此低k膜。此外,现有的具有超低k物质的集成电路布图中可能包括多个覆盖层。例如,很多超低k集成电路布图具有两层覆盖层,顶层是牺牲层,下面一层是保护介电质的底层。对于这种有两层覆盖层的电路,低k阻隔物去除浆料必需能除去阻隔物质,根据前述步骤保持或修整表面形貌,除去表面的牺牲覆盖层,而维持底部覆盖层,同时不能“穿透”底下的超低k介电质。这需要选择性地在多个不同膜、阻隔层、一种或可能两种的覆盖材料、例如铜等互连金属和低k介电质膜之间进行控制。因此,需要一种能控制阻隔物、介电质、Cu膜、和覆盖层之间选择性的浆料。
发明内容
本发明提供一种用来对半导体基材进行化学机械平坦化的水性浆料,包括按重量百分数计,0.1-25的氧化剂、0.1-20的平均粒径小于200nm的二氧化硅颗粒、0.005-0.8的用于包覆二氧化硅颗粒的聚乙烯基吡咯烷酮(PVP)、0.01-10的降低至少一种有色金属去除速率的抑制剂、0.001-10的有色金属络合剂和余量的水以及随附杂质;所述水性浆料的pH至少为7。
半导体基材的抛光方法,包括如下步骤:
a)在所述半导体基材上施加如权利要求1所述的浆料;
b)向抛光垫施加21kPa或更小的相对于所述半导体基材向下的力;
c)用所述抛光垫对所述半导体基材进行平坦化以去除所述半导体基材上的阻隔物。
附图说明
图1是TEOS和CDO(低k)的去除速率相对于聚乙烯基吡咯烷酮(PVP)含量的关系图。
图2是TEOS和碳化硅的去除速率相对于聚乙烯基吡咯烷酮(PVP)含量的关系图。
图3是TEOS和碳化硅和CDO(低k)的去除速率相对于聚乙烯基吡咯烷酮(PVP)含量的关系图。
图4是CDO(低k)的粗糙度相对于聚乙烯基吡咯烷酮(PVP)含量的关系图。
图5是TEOS的粗糙度相对于聚乙烯基吡咯烷酮(PVP)含量的关系图。
图6是三种不同浆料的zeta电位相对于聚乙烯基吡咯烷酮(PVP)含量的关系图。
具体实施方式
已经发现,向含有二氧化硅的浆料添加控制量的聚乙烯基吡咯烷酮(或称为PVP),可以很好地控制低k介电质膜的去除速率选择性。具体而言,向二氧化硅CMP浆料加入PVP可以抛光低k介电质膜(通常是憎水性的),还可以抛光具有硬膜覆盖层的膜。
抛光浆料包括0.1-25重量百分数的氧化剂。该氧化剂是用来氧化晶片的金属组分,例如铜。此说明书描述所有以重量百分数计算的浓度。浆料宜包括0.1-10重量百分数的氧化剂。更好地,浆料包括0.5-7.5重量百分数的氧化剂。氧化剂可以是多种氧化物的至少一种,例如过氧化氢(H2O2)、单过硫酸盐、碘酸盐、过邻苯二甲酸镁、过乙酸和其他过酸、过硫酸盐、溴酸盐、过碘酸盐、硝酸盐、铁盐、铈盐、Mn(III)、Mn(IV)和Mn(VI)盐、银盐、铜盐、铬盐、钴盐、卤素和次氯酸盐。另外,氧化物的混合物通常也是适宜的。优选的阻隔金属抛光浆料包括过氧化氢氧化剂。当抛光浆料包含不稳定的氧化剂例如过氧化氢时,通常最合适的做法是在使用的时候将氧化剂混入浆料。
浆料包括0.1-20重量百分数的二氧化硅胶体磨料用以去除阻隔材料。浆料宜包括0.1-15重量百分数的二氧化硅胶体磨料。二氧化硅胶体磨料的平均粒径小于200nm。水性浆料中宜包含平均粒径5-150nm的二氧化硅胶体。最好的是,二氧化硅胶体的平均粒径在6-120nm之间。通常,粒径加大会导致阻隔物去除速率提高。但是加大二氧化硅胶体的粒径还容易加大浆料对半导体晶片的刮擦。除了二氧化硅颗粒的粒径外,颗粒的形状和形貌也对刮擦有所影响。
浆料还包括0.005-0.8的聚乙烯基吡咯烷酮(PVP)用来包覆二氧化硅颗粒。本说明书中,包覆二氧化硅颗粒定义为PVP对浆料zeta电位有可测量的影响。例如,浆料含有或不含PVP时zeta电位可探测到差异,即产生zeta电位的可测量的影响。适于测定zeta电位的仪器具体有Dispersion Technology生产的DT-1200。浆料宜含有0.05-0.8重量百分数的PVP。应用中,如果要求以适中速率去除低k物质来去除阻隔物时,浆料宜含有0.05-0.4重量百分数的PVP。应用中,如果要求以低速率去除低k物质来去除阻隔物时,浆料宜包含0.4-0.8重量百分数的PVP。
PVP对浆料zeta电位宜提高至少2毫伏。尽管提高zeta电位会降低浆料的稳定性,它同时也降低低k物质的去除速率。更好地,浆料的PVP提高至少5毫伏的zeta电位。然而过多的PVP将导致二氧化硅胶体不可逆的沉淀。本说明书中,不可逆的沉淀是指水性溶液中的二氧化硅经过2分钟振荡后保持沉淀状态。PVP较好使浆料经过室温的储存至少30天后产生的不可逆沉淀二氧化硅颗粒少于10,最好的是,少于2%。通常,减少不可逆二氧化硅沉淀将降低浆料的刮擦趋势。
加入0.01-10总重量百分数的抑制剂会降低有色金属,例如铜、银、铜合金和银合金的去除速率。最好的是,半导体晶片包括铜。抑制剂宜包括唑类化合物。唑类抑制剂包括苯并三唑(BTA)、甲基苯并三唑、咪唑和其他唑类化合物。最好的是,浆料包含0.01-5总重量百分数的唑类抑制剂。
用于去除阻隔金属的水性浆料的pH至少为7。该浆料对去除钽、氮化钽、钛、氮化钛和其他阻隔金属特别有效。最好的是,浆料的pH在7.5-12之间。提供氢氧根的化合物,例如氨、氢氧化钠或氢氧化钾则用来调节在碱性范围的pH。最好的是,提供氢氧根的化合物是氢氧化钾。
除了抑制剂外,0.001-10重量百分数的络合剂也能防止有色金属沉淀。最好的是,浆料包含0.001-5的重量百分数的络合剂。络合剂的例子包括乙酸、柠檬酸、乙基乙酰乙酸、乙醇酸、乳酸、马来酸、草酸、水杨酸、二乙基二硫代氨基甲酸钠、琥珀酸、酒石酸、硫代乙醇酸、甘氨酸、丙氨酸、天冬氨酸、1,2-乙二胺、三甲基二胺、丙二酸、戊二酸、3-羟基丁酸、丙酸、邻苯二甲酸、间苯二甲酸、3-羟基水杨酸、3,5-二羟基水杨酸、五倍子酸、葡糖酸、邻苯二酚、连苯三酚、单宁酸及其盐。络合剂宜选自乙酸、柠檬酸、乙基乙酰乙酸、乙醇酸、乳酸、马来酸、草酸。络合剂最好为柠檬酸。
或者,浆料可以包括例如氯化物的平化剂,具体来说有,氯化铵、缓冲剂、分散剂和表面活性剂。氯化铵可以改进表面外观。
浆料抛光半导体基材的时候,在抛光垫上施加21kPa或更小向下的力将浆料施加到半导体基材上是适宜的。向下的力表示抛光垫作用于半导体基材的力。抛光垫可以是圆形、带状结构。向下力较小特别适用于对半导体基材平坦化将阻隔物质从基材上去除。最好的是,抛光时向下力小于15kPa。
平坦化过程中将TEOS从半导体基材上去除的速率可以是介电质材料从半导体基材上去除的速率至少五倍。某些配方的浆料,平坦化过程中将TEOS从半导体基材上去除的速率可以是k介电质材料从半导体基材上的去除速率至少十倍。此外,平坦化过程中将SiC阻隔物从半导体基材上去除的速率可以大于低k介电质材料从半导体基材上的去除速率。
实施例
所有试验采用200mm的晶片。这些晶片包括TEOS二氧化硅、氮化硅、碳化硅、掺杂碳的氧化物(CDO)、氮化钽、钽和铜电镀层晶片来测定晶片层的去除速率。低k介电质是Novellus供应的CORAL CDO。此外,表面形貌的数据由测定International Sematech,MIT 854-AZ有图案的晶片,采用Rodel标准IC1010TM包括微孔结构的聚氨酯抛光垫,或PolitexHi Embossed垫得到。Applied Materials公司的MIRRACMP设备提供抛光台。
对所有有图案的晶片,第一步抛光使用Eternal的EPL2360抛光浆料与平台1上的IC1010垫和Rodel的RLS3126反应液(不含酸性磨料的溶液)与平台2上的IC1010垫。第二步阻隔层抛光是在平台3上使用Rodel Politex HiEmbossed或IC1010抛光垫。过程中向下的力为2psi(13.8kPa)或3psi(20.7kPa),平台和支架的速度分别同时调节到120和114rpm,浆料流量设定为180ml/min。
测定抛光前后的厚度可以计算材料去除速率。KLA-Tencor SM300或Therma Wave Optiprobe 2600在可见的电磁波范围能测定光学上透明的介电质膜的厚度,例如,PECVD TEOS SiO2、碳化硅和氮化硅。四点探针式CDE ResmapThikness仪测定例如氮化钽、钽、和铜等的导电膜的厚度。最后,Dektak VeecoV200SL测定有图案的晶片的表面形貌数据。zeta电位的测量采用DispersionTechnology生产的DT-1200装置。本说明书中,所有材料去除速率的单位为/min。
以下的表提供了所测定的抛光浆料的重量百分数化学组成。以字母表示的浆料是对比浆料,以数字表示的浆料是本发明的浆料。
表1
浆料 | 柠檬酸 | 氯化铵 | PVP | BTA | 二氧化硅 | H2O2 | pH |
A | 0.3 | 0.01 | 0 | 0.05 | 12 | 0.8 | 9 |
B | 0.3 | 0.01 | 0 | 0.05 | 8.5 | 0.8 | 9 |
C | 0.3 | 0.01 | 1.0 | 0.05 | 12 | 0.8 | 9 |
D | 0.3 | 0.01 | 1.0 | 0.05 | 8.5 | 0.8 | 9 |
E | 0 | 0 | 0.1 | 0 | 30 | 0 | 9 |
F | 0 | 0 | 0.2 | 0 | 30 | 0 | 9 |
G | 0 | 0 | 0.3 | 0 | 30 | 0 | 9 |
H | 0 | 0 | 0.4 | 0 | 30 | 0 | 9 |
I | 0 | 0 | 0.5 | 0 | 30 | 0 | 9 |
J | 0 | 0 | 0.8 | 0 | 30 | 0 | 9 |
K | 0 | 0 | 1.0 | 0 | 30 | 0 | 9 |
1 | 0.3 | 0.01 | 0.1 | 0.05 | 12 | 0.8 | 9 |
2 | 0.3 | 0.01 | 0.2 | 0.05 | 12 | 0.8 | 9 |
3 | 0.3 | 0.01 | 0.3 | 0.05 | 12 | 0.8 | 9 |
4 | 0.3 | 0.01 | 0.4 | 0.05 | 12 | 0.8 | 9 |
5 | 0.3 | 0.01 | 0.5 | 0.05 | 12 | 0.8 | 9 |
6 | 0.3 | 0.01 | 0.6 | 0.05 | 12 | 0.8 | 9 |
7 | 0.3 | 0.01 | 0.8 | 0.05 | 12 | 0.8 | 9 |
8 | 0.3 | 0.01 | 0.2 | 0.05 | 8.5 | 0.8 | 9 |
9 | 0.3 | 0.01 | 0.3 | 0.05 | 8.5 | 0.8 | 9 |
10 | 0.3 | 0.01 | 0.5 | 0.05 | 8.5 | 0.8 | 9 |
11 | 0.3 | 0.01 | 0.6 | 0.05 | 8.5 | 0.8 | 9 |
12 | 0.3 | 0.01 | 0.8 | 0.05 | 8.5 | 0.8 | 9 |
实施例1
下表示出以3psi(20.7kPa)的向下力对多种半导体组分去除速率的影响。
表2
浆料 | PVP(%) | TEOS RR | CDO RR | Cu RR | TaN RR |
A | 0 | 933 | 1227 | 87 | 1020 |
1 | 0.1 | 1457 | 867 | 241 | 1421 |
2 | 0.2 | 1294 | 347 | 70 | 1190 |
4 | 0.4 | 895 | 100 | 294 | 1040 |
6 | 0.6 | 795 | 67 | 324 | 1007 |
RR=去除速率
如图1所示,不含PVP的浆料的CMP抛光过程能同时去除TEOS(覆盖层材料)和低K材料(CDO)。但是加入PVP到浆料中,使浆料相对于低k膜选择性地去除TEOS膜。因此,这个配方使芯片制造厂家进行化学机械平坦化并停止在低k膜上。例如,一些双重硬掩膜/覆盖层集成电路需要去除TEOS覆盖膜,而在SiC或CDO层停止。对于这些集成电路,具有高TEOS去除速率并停止在SiC上的浆料4提供了很好的解决方案。
实施例2
下表证实了PVP对SiC晶片的效果,显示向下力减小到2psi(13.8kPa)时的影响。
表3
浆料 | PVP(%) | TEOS RR | SiC RR* | TaN RR | CDO RR |
A | 0 | 551 | 557 | 945 | 833 |
1 | 0.1 | 738 | 697 | 1237 | 585 |
2 | 0.2 | 615 | 393 | 1025 | 263 |
4 | 0.4 | 502 | 163 | 996 | 69 |
6 | 0.6 | 438 | 90 | 1017 | 40 |
RR=去除速率
从实施例1可以观察到,CDO去除速率随着PVP在浆料中的增加而减少。除此以外,如图2所示,加入PVP还降低了SiC的去除速率。由于SiC相对于CDO较硬,SiC的去除速率在大部分浆料中通常比CDO的去除速率要小很多。但是含有PVP的溶液显示出SiC的去除速率要大于CDO的去除速率。
实施例3
以下系列数据测定了固体浓度对含有8.5wt.%的二氧化硅的浆料在SiC和CDO晶片上的影响,此时向下力为2psi(13.8kPa)。
表4
浆料 | PVP(%) | TEOS RR | SiC RR | TaN RR | CDO RR |
B | 0 | 410 | 386 | 694 | 579 |
8 | 0.2 | 375 | 215 | 902 | 150 |
11 | 0.6 | 297 | 62 | 807 | 39 |
RR=去除速率
观察前面的一些实施例可知,PVP降低了CDO和SiC的去除速率。图3示出表4的浆料对低k物质的去除速率有极大的影响。
实施例4
另外一个影响低k膜抛光的重要参数是表面性质。具体而言,形成憎水表面的低k介电质难以清除。但是浆料中的PVP还表现出能够将憎水的低k表面从憎水改变为亲水从而容易清除的特性。这一点提供了该浆料性能方面的另一个显著优点,即不需要表面活性剂对表面进行改性。加入PVP后,表现出能够减少或消除加入表面活性物质的需要,并且减少浆料对表面活性剂的需要增加了浆料稳定性。表5提供含PVP和不含PVP的浸水试验结果。
表5
组成 | SiCOH表面 |
2(0.2%PVP) | 亲水-浸湿 |
A(0 PVP) | 憎水-干燥 |
图4显示,没有PVP时,CDO晶片的表面不如含PVP浆料得到的表面平滑。图5显示,加入PVP还改善了TEOS晶片的表面质量。除此以外,增加了0.1重量百分数的上述TEOS,还能够额外的改进TEOS晶片表面的光洁度。然而,含PVP的浆料对于铜晶片的表面质量的影响不稳定,没有什么好处。
实施例5
本实验比较了不同浆料中PVP对zeta电位的影响,该浆料包括含8.5wt.%的二氧化硅(B,D和8-12),含12wt.%的二氧化硅(A,C和1-7)和含30wt.%二氧化硅的纯二氧化硅浆料。图6示出了很小浓度的PVP引起zeta电位的急剧上升。另外,该图示出了zeta电位根据浆料组成而改变。
可调控阻隔物去除速率的浆料有利于调节铜、覆盖层和介电质膜的相对去除速率,从而优化最终晶片的表面形貌。这对控制选择性去除包括阻隔物、铜、低k和硬质掩模/覆盖介电质膜在内的各种不同膜是有功效的。因此,在这些膜间进行选择性控制可以制备不同的集成电路、满足不同的需求。例如,数据显示,去除阻隔物的浆料对TEOS∶CDO的选择性可以达到10∶1或更高。
含有PVP的浆料对低k晶片是有效的,特别是对那些需要去除覆盖膜(TEOS)但是在SiC或CDO膜停止的集成电路是有效的。例如,这种浆料可以提供一种高选择性的浆料,以便清除阻隔物后保持晶片的表面形貌,而且长时间的过度抛光下ILD损失很小。采用聚合物抛光垫,具体来说是微孔聚氨酯垫,能使浆料去除的低k物质或覆盖物质的量最小。对双面硬掩膜集成电路,适宜使用具有中等选择性的浆料。这些集成电路需要将表面硬掩膜彻底去除,而底部硬掩膜的去除量要尽可能少。低选择性的浆料在那些用Politex或IC1010抛光垫修整表面形貌,并对低k物质平坦化的结构中使用。不足之处在于采用这种低选择性的浆料将使ILD损失较多。
总之,可调控阻隔物去除速率的浆料可以调节铜或银、介电质和覆盖层的相对去除速率,从而可以优化特定集成电路中晶片的最后表面形貌、降低介电质/金属损失。此外,阻隔物去除速率高,晶片的产率也高。另外,在阻隔物去除步骤中晶片可以非常显著地减少表面形貌变化而不影响介电质损失;而且该组合物可以提供低缺陷率以及良好的表面质量。最后,该可调控阻隔物去除浆料便于预先调配成最适合某种集成电路并且具有对TEOS/SiC和TEOS/CD0高选择性的浆料,以便对有覆盖层的或没有覆盖层的低k有图案的晶片进行平坦化。
Claims (10)
1.一种用来对半导体基材进行化学机械平坦化的水性浆料,包括,按重量百分数计,0.1-25的氧化剂、0.1-20的平均粒径小于200nm的二氧化硅颗粒、0.005-0.8的用于包覆二氧化硅颗粒的聚乙烯基吡咯烷酮(PVP)、0.01-10的用于降低至少一种有色金属去除率的抑制剂、0.001-10的有色金属络合剂和余量的水以及附带的杂质;所述水性浆料的pH至少为7。
2.如权利要求1所述的水性浆料,其特征在于,所述PVP使ζ电位至少升高2毫伏。
3.如权利要求1所述的水性浆料,其特征在于,所述浆料在室温储存至少30天产生的不可逆沉淀的二氧化硅颗粒少于10%。
4.一种用来对半导体基材进行化学机械平坦化的水性浆料,包括,按重量百分数计,0.1-10的氧化剂、0.1-15的平均粒径5-150nm的二氧化硅颗粒、0.05-0.8的用于包覆二氧化硅颗粒的聚乙烯基吡咯烷酮(PVP)、总量为0.01-5的用于降低至少一种有色金属去除率的唑类抑制剂、0.001-5的有色金属络合剂和余量的水以及附带的杂质;所述水性浆料的pH为7.5-12。
5.如权利要求4所述的水性浆料,其特征在于,所述PVP使ζ电位至少增大2毫伏,所述浆料在室温储存至少30天产生的不可逆沉淀的二氧化硅颗粒少于10%。
6.如权利要求水4所述的水性浆料,其特征在于,所述PVP浓度为0.05-0.4重量%。
7.如权利要求4所述的水性浆料,其特征在于,所述PVP浓度为0.4-0.8重量%。
8.一种半导体基材的抛光方法,包括如下步骤:
a)在所述半导体基材上施加如权利要求1所述的浆料;
b)向抛光垫施加21kPa或更小的向下力,所述向下力顶住所述半导体基材;
c)用所述抛光垫对所述半导体基材进行平坦化以去除所述半导体基材上的阻隔物。
9.如权利要求8所述的方法,其特征在于,所述平坦化步骤在所述半导体基材上的TEOS去除率是在所述半导体基材上的低k电介质材料去除率的至少5倍。
10.如权利要求8所述的方法,其特征在于,所述平坦化步骤在所述半导体基材上的SiC阻隔物的去除率大于在所述半导体基材上低k电介质材料的去除率。
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Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6761625B1 (en) * | 2003-05-20 | 2004-07-13 | Intel Corporation | Reclaiming virgin test wafers |
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US20100087065A1 (en) * | 2007-01-31 | 2010-04-08 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
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Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4154610A (en) * | 1974-10-31 | 1979-05-15 | Fuji Photo Film Co., Ltd. | Photographic method and film unit |
JPH09142827A (ja) * | 1995-09-12 | 1997-06-03 | Tokuyama Corp | シリカ分散液及びその製造方法 |
US5876490A (en) | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
US20020019202A1 (en) * | 1998-06-10 | 2002-02-14 | Thomas Terence M. | Control of removal rates in CMP |
JP2002517593A (ja) * | 1998-06-10 | 2002-06-18 | ロデール ホールディングス インコーポレイテッド | 金属cmpにおける研磨用組成物および研磨方法 |
JP2000133621A (ja) * | 1998-10-27 | 2000-05-12 | Tokyo Magnetic Printing Co Ltd | 化学機械研磨組成物 |
WO2000036037A1 (en) | 1998-12-17 | 2000-06-22 | Rodel Holdings, Inc. | Compositions and methods for polishing semiconductor wafers |
US6328634B1 (en) * | 1999-05-11 | 2001-12-11 | Rodel Holdings Inc. | Method of polishing |
US6443812B1 (en) * | 1999-08-24 | 2002-09-03 | Rodel Holdings Inc. | Compositions for insulator and metal CMP and methods relating thereto |
JP4832690B2 (ja) | 1999-08-24 | 2011-12-07 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 絶縁体及び金属のcmp用組成物及びそれに関する方法 |
JP2001077060A (ja) * | 1999-09-08 | 2001-03-23 | Toshiba Corp | 半導体装置の製造方法 |
WO2001019935A1 (en) | 1999-09-15 | 2001-03-22 | Rodel Holdings, Inc. | Slurry for forming insoluble silicate during chemical-mechanical polishing |
US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
JP2001144060A (ja) * | 1999-11-11 | 2001-05-25 | Hitachi Chem Co Ltd | 金属積層膜を有する基板の研磨方法 |
JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US6676718B2 (en) * | 2001-01-12 | 2004-01-13 | Rodel Holdings, Inc. | Polishing of semiconductor substrates |
US6530824B2 (en) * | 2001-03-09 | 2003-03-11 | Rodel Holdings, Inc. | Method and composition for polishing by CMP |
JP2004523123A (ja) * | 2001-03-12 | 2004-07-29 | ロデール ホールディングス インコーポレイテッド | Cmp研磨のための方法及び組成物 |
JP2002176015A (ja) | 2001-10-15 | 2002-06-21 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
JP2004064061A (ja) * | 2002-06-07 | 2004-02-26 | Showa Denko Kk | 金属研磨組成物、それを用いた金属研磨方法、及びその金属研磨方法を用いた基板の製造方法 |
US6811474B2 (en) * | 2002-07-19 | 2004-11-02 | Cabot Microelectronics Corporation | Polishing composition containing conducting polymer |
JP2004123931A (ja) * | 2002-10-03 | 2004-04-22 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
JP2004231748A (ja) * | 2003-01-29 | 2004-08-19 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
-
2003
- 2003-02-27 US US10/376,059 patent/US6916742B2/en not_active Expired - Lifetime
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- 2004-02-23 EP EP04713809A patent/EP1597328B1/en not_active Expired - Lifetime
- 2004-02-27 TW TW093105191A patent/TWI297035B/zh not_active IP Right Cessation
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US6916742B2 (en) | 2005-07-12 |
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