DE602004000914D1 - Polieraufschlämmung zum abtragen einer modularen barriere - Google Patents
Polieraufschlämmung zum abtragen einer modularen barriereInfo
- Publication number
- DE602004000914D1 DE602004000914D1 DE602004000914T DE602004000914T DE602004000914D1 DE 602004000914 D1 DE602004000914 D1 DE 602004000914D1 DE 602004000914 T DE602004000914 T DE 602004000914T DE 602004000914 T DE602004000914 T DE 602004000914T DE 602004000914 D1 DE602004000914 D1 DE 602004000914D1
- Authority
- DE
- Germany
- Prior art keywords
- polishing temperature
- modular barrier
- modular
- barrier
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000004888 barrier function Effects 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/001—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as supporting member
- B24D3/002—Flexible supporting members, e.g. paper, woven, plastic materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/376,059 US6916742B2 (en) | 2003-02-27 | 2003-02-27 | Modular barrier removal polishing slurry |
US376059 | 2003-02-27 | ||
PCT/US2004/005562 WO2004076575A2 (en) | 2003-02-27 | 2004-02-23 | Modular barrier removal polishing slurry |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602004000914D1 true DE602004000914D1 (de) | 2006-06-22 |
DE602004000914T2 DE602004000914T2 (de) | 2007-01-18 |
Family
ID=32907888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004000914T Expired - Lifetime DE602004000914T2 (de) | 2003-02-27 | 2004-02-23 | Polieraufschlämmung zum abtragen einer modularen barriere |
Country Status (8)
Country | Link |
---|---|
US (1) | US6916742B2 (de) |
EP (1) | EP1597328B1 (de) |
JP (1) | JP4814784B2 (de) |
KR (1) | KR101099721B1 (de) |
CN (1) | CN100369998C (de) |
DE (1) | DE602004000914T2 (de) |
TW (1) | TWI297035B (de) |
WO (1) | WO2004076575A2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6761625B1 (en) * | 2003-05-20 | 2004-07-13 | Intel Corporation | Reclaiming virgin test wafers |
US7300480B2 (en) * | 2003-09-25 | 2007-11-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate barrier polishing composition |
US20050097825A1 (en) * | 2003-11-06 | 2005-05-12 | Jinru Bian | Compositions and methods for a barrier removal |
US20050136670A1 (en) * | 2003-12-19 | 2005-06-23 | Ameen Joseph G. | Compositions and methods for controlled polishing of copper |
US20050194562A1 (en) * | 2004-02-23 | 2005-09-08 | Lavoie Raymond L.Jr. | Polishing compositions for controlling metal interconnect removal rate in semiconductor wafers |
US7025661B2 (en) * | 2004-09-16 | 2006-04-11 | United Microelectronics Corp. | Chemical mechanical polishing process |
US7988878B2 (en) * | 2004-09-29 | 2011-08-02 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Selective barrier slurry for chemical mechanical polishing |
US20060135045A1 (en) * | 2004-12-17 | 2006-06-22 | Jinru Bian | Polishing compositions for reducing erosion in semiconductor wafers |
US7467988B2 (en) * | 2005-04-08 | 2008-12-23 | Ferro Corporation | Slurry composition and method for polishing organic polymer-based ophthalmic substrates |
US7294044B2 (en) * | 2005-04-08 | 2007-11-13 | Ferro Corporation | Slurry composition and method for polishing organic polymer-based ophthalmic substrates |
JP4776269B2 (ja) * | 2005-04-28 | 2011-09-21 | 株式会社東芝 | 金属膜cmp用スラリー、および半導体装置の製造方法 |
US20090212021A1 (en) * | 2005-06-13 | 2009-08-27 | Advanced Technology Materials, Inc. | Compositions and methods for selective removal of metal or metal alloy after metal silicide formation |
TWI385226B (zh) * | 2005-09-08 | 2013-02-11 | 羅門哈斯電子材料Cmp控股公司 | 用於移除聚合物阻障之研磨漿液 |
JPWO2007029465A1 (ja) * | 2005-09-09 | 2009-03-19 | 旭硝子株式会社 | 研磨剤、被研磨面の研磨方法および半導体集積回路装置の製造方法 |
JP2007095713A (ja) * | 2005-09-26 | 2007-04-12 | Fujifilm Corp | バリア層用研磨液 |
US7538969B2 (en) * | 2006-08-23 | 2009-05-26 | Imation Corp. | Servo pattern with encoded data |
US7678700B2 (en) * | 2006-09-05 | 2010-03-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
US7998866B2 (en) * | 2006-09-05 | 2011-08-16 | Cabot Microelectronics Corporation | Silicon carbide polishing method utilizing water-soluble oxidizers |
KR100856542B1 (ko) * | 2006-09-11 | 2008-09-04 | 재단법인서울대학교산학협력재단 | 구리 화학적 기계적 연마공정용 슬러리 및 이를 이용한구리 배선 형성방법 |
WO2008095078A1 (en) * | 2007-01-31 | 2008-08-07 | Advanced Technology Materials, Inc. | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
US20080276543A1 (en) * | 2007-05-08 | 2008-11-13 | Thomas Terence M | Alkaline barrier polishing slurry |
US20090031636A1 (en) * | 2007-08-03 | 2009-02-05 | Qianqiu Ye | Polymeric barrier removal polishing slurry |
US20090032765A1 (en) * | 2007-08-03 | 2009-02-05 | Jinru Bian | Selective barrier polishing slurry |
CN101724347A (zh) * | 2008-10-10 | 2010-06-09 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
US8071479B2 (en) * | 2008-12-11 | 2011-12-06 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition and methods relating thereto |
US20100159807A1 (en) | 2008-12-22 | 2010-06-24 | Jinru Bian | Polymeric barrier removal polishing slurry |
TWI371481B (en) * | 2009-04-02 | 2012-09-01 | Uwiz Technology Co Ltd | Slurry composition and method of fabricating damascene structure using the same |
CN101906269A (zh) * | 2009-06-08 | 2010-12-08 | 安集微电子科技(上海)有限公司 | 一种金属化学机械抛光的浆料及其使用方法 |
CN102101976A (zh) * | 2009-12-18 | 2011-06-22 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
JP5819076B2 (ja) * | 2010-03-10 | 2015-11-18 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
CN104449398B (zh) * | 2014-11-25 | 2017-06-23 | 河北工业大学 | 一种适用于钴阻挡层的碱性化学机械抛光液 |
WO2018123875A1 (ja) | 2016-12-26 | 2018-07-05 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
CN114436608A (zh) * | 2022-02-10 | 2022-05-06 | 福建晶烯新材料科技有限公司 | 一种半导体纳米电热膜除膜水基阻隔浆料 |
CN116554788B (zh) * | 2023-05-06 | 2024-01-23 | 江苏山水半导体科技有限公司 | 一种降低硅片表面颗粒缺陷的精抛液及其制备与使用方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4154610A (en) * | 1974-10-31 | 1979-05-15 | Fuji Photo Film Co., Ltd. | Photographic method and film unit |
JPH09142827A (ja) * | 1995-09-12 | 1997-06-03 | Tokuyama Corp | シリカ分散液及びその製造方法 |
US5876490A (en) | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
WO1999064527A1 (en) | 1998-06-10 | 1999-12-16 | Rodel Holdings, Inc. | Composition and method for polishing in metal cmp |
US20020019202A1 (en) | 1998-06-10 | 2002-02-14 | Thomas Terence M. | Control of removal rates in CMP |
JP2000133621A (ja) * | 1998-10-27 | 2000-05-12 | Tokyo Magnetic Printing Co Ltd | 化学機械研磨組成物 |
WO2000036037A1 (en) | 1998-12-17 | 2000-06-22 | Rodel Holdings, Inc. | Compositions and methods for polishing semiconductor wafers |
US6328634B1 (en) | 1999-05-11 | 2001-12-11 | Rodel Holdings Inc. | Method of polishing |
JP4832690B2 (ja) | 1999-08-24 | 2011-12-07 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 絶縁体及び金属のcmp用組成物及びそれに関する方法 |
US6443812B1 (en) | 1999-08-24 | 2002-09-03 | Rodel Holdings Inc. | Compositions for insulator and metal CMP and methods relating thereto |
JP2001077060A (ja) * | 1999-09-08 | 2001-03-23 | Toshiba Corp | 半導体装置の製造方法 |
WO2001019935A1 (en) | 1999-09-15 | 2001-03-22 | Rodel Holdings, Inc. | Slurry for forming insoluble silicate during chemical-mechanical polishing |
US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
JP2001144060A (ja) * | 1999-11-11 | 2001-05-25 | Hitachi Chem Co Ltd | 金属積層膜を有する基板の研磨方法 |
JP3768401B2 (ja) * | 2000-11-24 | 2006-04-19 | Necエレクトロニクス株式会社 | 化学的機械的研磨用スラリー |
US6676718B2 (en) * | 2001-01-12 | 2004-01-13 | Rodel Holdings, Inc. | Polishing of semiconductor substrates |
US6530824B2 (en) | 2001-03-09 | 2003-03-11 | Rodel Holdings, Inc. | Method and composition for polishing by CMP |
EP1380048A1 (de) * | 2001-03-12 | 2004-01-14 | Rodel Holdings, Inc. | Zusammensetzung und verfahren zur chemisch-mechanischen polierung |
JP2002176015A (ja) | 2001-10-15 | 2002-06-21 | Hitachi Chem Co Ltd | 金属用研磨液及び研磨方法 |
US6776810B1 (en) * | 2002-02-11 | 2004-08-17 | Cabot Microelectronics Corporation | Anionic abrasive particles treated with positively charged polyelectrolytes for CMP |
JP2004064061A (ja) * | 2002-06-07 | 2004-02-26 | Showa Denko Kk | 金属研磨組成物、それを用いた金属研磨方法、及びその金属研磨方法を用いた基板の製造方法 |
US6811474B2 (en) * | 2002-07-19 | 2004-11-02 | Cabot Microelectronics Corporation | Polishing composition containing conducting polymer |
JP2004123931A (ja) * | 2002-10-03 | 2004-04-22 | Hitachi Chem Co Ltd | 研磨液及び研磨方法 |
JP2004231748A (ja) * | 2003-01-29 | 2004-08-19 | Fuji Photo Film Co Ltd | 金属用研磨液及び研磨方法 |
-
2003
- 2003-02-27 US US10/376,059 patent/US6916742B2/en not_active Expired - Lifetime
-
2004
- 2004-02-23 KR KR1020057014900A patent/KR101099721B1/ko active IP Right Grant
- 2004-02-23 WO PCT/US2004/005562 patent/WO2004076575A2/en active IP Right Grant
- 2004-02-23 JP JP2006503858A patent/JP4814784B2/ja not_active Expired - Lifetime
- 2004-02-23 CN CNB2004800052903A patent/CN100369998C/zh not_active Expired - Lifetime
- 2004-02-23 EP EP04713809A patent/EP1597328B1/de not_active Expired - Lifetime
- 2004-02-23 DE DE602004000914T patent/DE602004000914T2/de not_active Expired - Lifetime
- 2004-02-27 TW TW093105191A patent/TWI297035B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
TWI297035B (en) | 2008-05-21 |
CN100369998C (zh) | 2008-02-20 |
JP4814784B2 (ja) | 2011-11-16 |
US6916742B2 (en) | 2005-07-12 |
JP2006519499A (ja) | 2006-08-24 |
EP1597328B1 (de) | 2006-05-17 |
WO2004076575A3 (en) | 2004-12-02 |
CN1753962A (zh) | 2006-03-29 |
EP1597328A2 (de) | 2005-11-23 |
KR101099721B1 (ko) | 2011-12-28 |
DE602004000914T2 (de) | 2007-01-18 |
TW200502373A (en) | 2005-01-16 |
US20040171265A1 (en) | 2004-09-02 |
KR20050102112A (ko) | 2005-10-25 |
WO2004076575A2 (en) | 2004-09-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, I |
|
8364 | No opposition during term of opposition |