CN1748012A - 用于向其粘结晶片的压敏胶粘带 - Google Patents
用于向其粘结晶片的压敏胶粘带 Download PDFInfo
- Publication number
- CN1748012A CN1748012A CNA2004800035062A CN200480003506A CN1748012A CN 1748012 A CN1748012 A CN 1748012A CN A2004800035062 A CNA2004800035062 A CN A2004800035062A CN 200480003506 A CN200480003506 A CN 200480003506A CN 1748012 A CN1748012 A CN 1748012A
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- radiation
- wafer
- bonding coat
- curing
- bonding
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/385—Acrylic polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
一种用于在其上粘结晶片的压敏胶粘带,其具有基底材料和,在其表面上形成的辐射-固化压敏粘合层,和任选的用于粘合管芯的粘合层,其中该辐射-固化压敏粘合层含有作为主要组分的丙烯酸系共聚物,在该丙烯酸系共聚物的主链上含有具有辐射-固化碳-碳双键的基团、具有羟基的基团和具有羧基的基团,且凝胶含量为60%或更高。
Description
技术领域
本发明涉及在基膜的一个侧面上提供可去除粘合剂层的胶粘带。
背景技术
半导体器件(例如IC等)的装配过程包括下列步骤:在形成图样后,切断和分隔(切割)半导体晶片等成为相应的芯片;将芯片安装在衬底等上;和以树脂等进行密封。
在切割步骤中,预先通过胶粘带粘着和固定半导体晶片,然后沿着芯片形状进行切割。在安装步骤中,从胶粘带上剥离(拾取)芯片,然后以用于粘合和固定的粘合剂固定在衬底等上。
用于上述目的的带包括常用的压敏粘合剂-型带和当通过辐射(例如紫外(UV)线、电子射线等)进行硬化或固化时具有降低的粘合力的带。这两种类型的带均要求具有足够的粘合力,以便在切割时带不从晶片上剥离,且它们还要求具有在拾取时易于从晶片上剥离的剥离能力。
此外,在安装步骤中,在芯片和衬底等之间要求具有足够的粘合力。
已经提出多种既具有用于上述过程的切割胶粘带功能又具有在衬底等上的粘合剂功能的粘合剂或粘合带,其中这些带在粘合剂的涂覆可加工性上得到改善,且其简化了整个过程。
这些胶粘带能够进行所谓的直接管芯粘结(die bonding),用于切割后,拾取具有粘着在芯片的后侧的可去除粘合层的芯片、在衬底等上安装芯片、和通过加热等固化和粘合芯片之后。通过这些胶粘带,粘合剂的涂覆过程可以忽略。
然而,用于这些胶粘带的可去除粘着剂或粘合剂在用于带基的具有低粘度和低可湿性的涂覆液体状态中,因而具有产率低的问题。此外,相对于现有用于管芯粘结的粘合剂或粘接剂,上述粘着或粘合剂的粘着强度低。从而难以由上述粘着或粘合剂获得可靠性。
作为获得粘着可靠性和提供切割性能的方法,建议使用管芯粘接粘合层和切割带的层压材料。然而,该层压-型带具有难以控制粘合剂和切割带之间剥离能力的问题。在临时固定到晶片上时,具有高粘着可靠性的管芯胶粘剂通常需要进行热粘着。然而,由于这种热粘着,该层压-型带具有增加切割带和管芯-粘接-片粘合层之间剥离能力的问题,从而导致切割后拾取失效率升高。
此外,建议预先将管芯粘接片加热粘合到晶片上,并在使用前将切割带层压到粘着在晶片上的管芯粘接粘合层上。而且,在这种情况下,用于背-研磨的表面保护带通常粘接到其上没有粘接管芯粘接片或切割带的晶片侧面。为了通过降低表面保护带的粘合力,将表面保护带从晶片上剥离,通常进行热处理。加热温度通常为约40℃或更高,例如,约60℃。与上述相似,这导致增加管芯粘接粘合层和切割带之间剥离力的问题。
发明内容
本发明涉及一种晶片-粘合胶粘带,其具有在基底表面上的辐射-固化可去除粘合层,其中该辐射-固化可去除粘合层主要由丙烯酸类共聚物组成,在该共聚物主链上分别具有至少一个含有辐射-固化碳-碳双键的基团、羟基、和含有羧基的基团,且该辐射-固化可去除粘合层的凝胶分数为60%或更高。
此外,本发明涉及一种晶片-粘合胶粘带,其在基底表面上依次具有辐射-固化可去除粘合层和管芯-粘接粘合层,其中该辐射-固化可去除粘合层主要由丙烯酸类共聚物组成,在该共聚物主链上分别具有至少一个含有辐射-固化碳-碳双键的基团、羟基、和含有羧基的基团,且该辐射-固化可去除粘合层的凝胶分数为60%或更高。
根据下列描述,本发明的其它和进一步特点和优势将变得更加充分。
具体实施方式
根据本发明,提供下列方法:
(1)一种晶片-粘合胶粘带,具有在基底表面上的辐射-固化可去除粘合层,其中该辐射-固化可去除粘合层主要由丙烯酸类共聚物组成,在该共聚物主链上分别具有,至少一个含有辐射-固化碳-碳双键的基团、羟基、和含有羧基的基团,且该辐射-固化可去除粘合层的凝胶分数为60%或更高;
(2)一种晶片-粘合胶粘带,在基底表面上依次具有辐射-固化可去除粘合层和管芯-粘接粘合层,其中该辐射-固化可去除粘合层主要由丙烯酸类共聚物组成,在该共聚物主链上分别具有,至少一个含有辐射-固化碳-碳双键的基团、羟基、和含有羧基的基团,且该辐射-固化可去除粘合层的凝胶分数为60%或更高;和
(3)根据上述条目(1)或(2)的晶片-粘合胶粘带,其中该辐射-固化可去除粘合层中含有的碳-碳双键比为0.5-2.0meq/g(毫当量/克)。
在此,术语“主要由...组成”是指辐射-固化可去除粘合层中的可去除粘合剂组分的主要组分为分别具有含有碳-碳双键的基团、羟基、和羧基的丙烯酸类共聚物,该层由可去除粘合剂组分、硬化剂和聚合引发剂组成。进一步,在本发明的胶粘带中,辐射-固化可去除粘合层的60质量%或更高通常由分别具有含有碳-碳双键的基团、羟基、和羧基的丙烯酸类共聚物组成。
此外,在此,“可去除粘合剂”是指能够粘合和在处理(例如固化)后去除的试剂,而“粘合剂”是指仅能够粘合的试剂。例如,“辐射-固化可去除粘合剂”是指在将该可去除粘合剂涂覆到晶片等之后,能够通过辐射(例如UV)照射硬化,去除或剥离的可去除粘合剂。
下面将对本发明进行详细描述。
本发明人进行了深入研究以解决常规粘合剂或粘合带的上述问题。结果,本发明人发现通过使用含有粘合剂或粘着组合物的胶粘带,在保持足够的粘着可靠性的同时,不出现有缺陷的拾取,其中该粘合剂或粘着组合物主要由在主链上分别具有至少一个含有辐射-固化碳-碳双键的基团、羟基、和含有羧基的基团的丙烯酸类聚合物组成,且该组合物的凝胶分数为60%或更高;且,如有必要,进一步将管芯-粘接粘合层与上述胶粘带进行层压。根据该发现完成本发明。
本发明的晶片粘合胶粘带可以通过在基底表面上形成辐射固化可去除粘合层而制备,其中该可去除粘合层主要由在主链上分别具有含有至少一个辐射固化碳-碳双键的基团、羟基和含羧基基团的丙烯酸类共聚物组成,且其中该粘合层的凝胶分数为60%或更高。进一步,除了辐射固化可去除粘合层,可以在基底表面上形成管芯-粘接粘合层,并优选在基底表面依次形成辐射固化可去除粘合层和管芯-粘接粘合层。
在主链上分别具有至少一个含有辐射固化碳-碳双键的基团、羟基、和含有羧基的基团的丙烯酸类共聚物(在下文中,称为“丙烯酸系共聚物(A)”)可为通过任意方法进行制备的任意丙烯酸类共聚物,该共聚物可用于本发明。例如,可以通过将含有(甲基)丙烯酸酯、含羟基不饱和化合物、含羧基不饱和化合物等的共聚物(A1)与具有能够与共聚物(A1)中的官能团进行加成反应的官能团且具有碳-碳双键的化合物(A2)进行加成反应而获得丙烯酸系共聚物(A),其中共聚物(A1)的碳链为主链。
作为(甲基)丙烯酸酯,包括,例如,丙烯酸己酯、丙烯酸正辛酯、丙烯酸异辛酯、丙烯酸2-乙基己基酯、丙烯酸十二烷基酯、丙烯酸癸酯,其中每个均具有6-12个碳原子,或具有5个或更少碳原子的单体,例如丙烯酸戊酯、丙烯酸正丁酯、丙烯酸异丁酯、丙烯酸乙酯、和丙烯酸甲酯,或类似的甲基丙烯酸酯类。在该情况下,随着单体碳原子数量的增加,玻璃化转变温度变得更低,从而能够制造具有期望转变温度的单体。此外,除了玻璃化转变温度外,为了增强相容性和各种性能,可以在5质量%或更低的范围内对具有碳-碳双键的低分子化合物(例如醋酸乙烯酯、苯乙烯、和丙烯腈)进行共混。
含羟基不饱和化合物的实例包括丙烯酸2-羟乙酯、甲基丙烯酸2-羟乙酯、丙烯酸2-羟丙酯、甲基丙烯酸2-羟丙酯,等。
含羧基不饱和化合物的实例包括丙烯酸、甲基丙烯酸,等。
在共聚物(A1)中的官能团为羧基或环酸酐基的情况中,作为具有加成反应官能团和碳-碳双键的上述化合物(A2)中的官能团包括羟基、环氧基、异氰酸基,等;或在共聚物(A1)中的官能团为羟基的情况中,作为上述化合物(A2)中的官能团包括环酸酐基、异氰酸基,等;或在共聚物(A1)中的官能团为氨基的情况中,作为上述化合物(A2)中的官能团包括异氰酸基,等。化合物(A2)的具体实例包括丙烯酸、甲基丙烯酸、肉桂酸、衣康酸、富马酸、酞酸、丙烯酸2-羟烷基酯、甲基丙烯酸2-羟烷基酯、单丙烯酸乙二醇酯、单甲基丙烯酸乙二醇酯、N-羟甲基丙烯酰胺、N-羟甲基甲基丙烯酰胺、烯丙醇、N-烷基氨基乙基丙烯酸酯、N-烷基氨基乙基甲基丙烯酸酯、丙烯酰胺、甲基丙烯酰胺、马来酸酐、衣康酸酐、富马酸酐、酞酐、丙烯酸缩水甘油酯、甲基丙烯酸缩水甘油酯、烯丙基缩水甘油醚、和其中以具有羟基或羧基及可光聚合碳-碳双键的单体对异氰酸基进行部分氨基甲酸酯改性(urethanated)的聚异氰酸酯化合物。
在丙烯酸类共聚物(A)的合成中,当以溶液聚合进行共聚时,酮类、酯类、醇类、或芳香类溶剂可用作有机溶剂。其中,优选的溶剂通常为丙烯酸类聚合物的良溶剂,该溶剂的沸点为60-120℃。优选溶剂的实例包括甲苯、乙酸乙酯、异丙醇、苯甲基溶纤剂、乙基溶纤剂、丙酮、甲乙酮,等。作为聚合引发剂,通常使用偶氮二(azobis)类(例如α,α’-偶氮二异丁腈)和有机过氧化物类(例如过氧化苯甲酰)的自由基产生剂(radical generating agent)。此时,如果需要,可以任选地添加催化剂、阻聚剂。这样,通过控制聚合温度和聚合时间,然后在官能团上进行加成反应,可以获得具有期望的分子量的丙烯酸类共聚物(A)。至于分子量的控制,优选使用硫醇类或四氯化碳类溶剂。此外,该共聚不限于溶液聚合,其还可以其它方式(例如本体聚合、悬浮聚合,等)进行。
如上所述,可以获得丙烯酸类共聚物(A)。在本发明中,丙烯酸类共聚物(A)的质均分子量优选为约300,000-约1,000,000。如果分子量太小,由辐射照射引起的内聚力变小,从而在切割晶片时易于发生元件(芯片)的不重合,且图象识别可变得困难。进一步,为了尽可能防止这种元件的不重合,优选分子量为400,000或更高。如果分子量太大,在合成和涂覆时,有凝胶化的可能。进一步,至于共聚物的性质,由于玻璃化转变温度低,在不是以图样形式而是整体进行辐射照射的情况下,即使分子量大,在辐射照射后,可去除粘合剂的流动性也不充分。因而,虽然没有发生这种拉伸后元件之间间隔不足或拾取时难以识别图像的问题,但分子量更优选为900,000或更低。在此,本发明中的分子量是指根据聚苯乙烯的质均分子量。
此外,在本发明中,在丙烯酸类共聚物(A)中待引入的可光聚合碳-碳双键的量可以根据,例如,其使用条件(例如UV照射量等)进行变化,且不限定,只要该量达到在辐射固化后使粘合力充分降低的效果即可。待引入的可光聚合碳-碳双键的量优选为0.5-2.0meq/g,更优选为0.8-1.5meq/g。如果双键量太少,在辐射照射后降低粘着能力的效果变得更小。如果双键量太大,在辐射照射后可去除粘合剂的流动性不充分,从而在某些情况下,使得拉伸后获得的元件之间的间隔不充分并使得拾取时难以对每个元件识别图像。进一步,在这种情况下,丙烯酸类共聚物(A)自身可为稳定性不足并可使得制造困难。
在本发明中,可以通过待共混的丙烯酸类共聚物(A)的平均分子量和硬化剂的量,控制辐射-固化可去除粘合层的凝胶分数。凝胶分数为60%或更高,且更优选80%或更高。如果凝胶分数太小,可去除粘合剂组分可以在接触界面上轻微移动,从而难以获得随着时间的推移的剥离力的稳定性。
此外,丙烯酸类共聚物(A)在主链上具有羟基和含羧基基团,其每一个均是未反应的。优选丙烯酸类共聚物(A)具有羟基,以使羟基值为5-10,更优选为20-70,由于辐射照射后粘着能力降低,从而进一步降低拾取错误的风险。进一步,优选丙烯酸类共聚物(A)具有羧基,以使酸值为0.5-30,由于改善了带恢复(复原)能力,从而易于处理用于使用的带的磁带罩(tape housing)-型装置。酸值更优选为1-10。同时,如果丙烯酸类共聚物(A)的羟基值太低,辐射照射后的粘着能力没有充分降低,或如果羟基值太高,辐射照射后,可去除粘合剂的流动性受到破坏。此外,如果酸值太低,带恢复能力没有充分改善,或如果酸值太高,可去除粘合剂的流动性受到破坏。
此外,在用于本发明的辐射-固化可去除粘合层经紫外线照射硬化的情况下,如有必要,作为附加组分可使用光聚合引发剂,例如异丙基苯偶姻醚、异丁基苯偶姻醚、二苯甲酮、米希勒酮(Michler’s ketone)、氯代噻吨酮、十二烷基噻吨酮、二甲基噻吨酮、二乙基噻吨酮、苯甲基二甲基缩酮、α-羟基环己基苯基酮、2-羟甲基苯丙烷,等。相对于100质量份丙烯酸类聚合物,待共混的光聚合引发剂的量优选为0.01-5质量份。
此外,如有必要,辐射固化可去除粘合层可以含有其它附加组分,这些附加组分包括,例如,硬化剂(如聚异氰酸酯化合物)等。相对于100质量份作为主要组分的丙烯酸类聚合物,待共混的硬化剂的量优选为0.5-10质量份。
辐射-固化可去除粘合层的厚度优选为5-50μm。
用于本发明的基底可以为任何具有辐射透射能力的材料的膜。该膜的实例包括由材料制得的膜,这些材料例如,α-烯烃的均聚物或共聚物,例如聚乙烯、聚丙烯、乙烯/丙烯共聚物、聚丁烯(polybuten)、乙烯/醋酸乙烯酯共聚物、乙烯/丙烯酸酯共聚物、或离聚物;工程塑料,例如聚对苯二甲酸乙二醇酯、聚碳酸酯、或聚(甲基丙烯酸甲酯);或热塑性弹性体,例如聚氨酯、苯乙烯/乙烯/丁烯、或五亚乙基六胺类共聚物。可选择地,可以使用选自上述化合物群中的两种或更多种的混合物层或双层或更多层。
使用的基膜的厚度优选为50-200μm。
通过层压这样获得的胶粘带和管芯-胶粘剂,可以制造具有更高性能的晶片粘合胶粘带。作为管芯-胶粘剂,可以使用丙烯酸/环氧类管芯胶粘剂等。通过将晶片-粘合胶粘带加热粘合到半导体晶片上,在切割步骤中获得足够的粘着能力,从而不使晶片、管芯-粘接粘合层、辐射-固化可去除粘合层、和基膜之间相互剥离或移动。另一方面,当拾取时,可去除粘合层可以容易地通过辐射硬化从粘附到管芯-粘结粘合层的芯片上剥离。
此外,通过将本发明的胶粘带粘合到具有粘附在其上的管芯-胶粘剂膜的晶片的管芯-粘接粘合层侧面上,可以具有相似的效果。
在切割时,管芯-粘接粘合层和辐射-固化可去除粘合层的剥离力优选为0.5-10N/25mm,且辐射照射后,粘附到管芯-粘接粘合层上的芯片和与可去除粘合层相粘附的带之间的剥离力优选为0.5-0.05N/25mm。
在本发明的一个优选实施例中,在基底表面上从基底侧(base side)依次形成辐射固化可去除粘合层和管芯-粘接粘合层。在本发明的管芯粘接粘合层中,例如,可以使用通常用于管芯-粘接(例如主要由环氧树脂组成的膜-状胶粘剂)的胶粘剂。管芯-粘接粘合层的厚度优选为5-50μm。
本发明的晶片-粘合胶粘带具有足够的粘着能力,当切割时,辐射-固化可去除粘合层不从管芯-粘接粘合层和晶片上进行剥离;当拾取时,通过辐射和硬化,可以容易地去除可去除粘合层和粘附到管芯-粘接粘合层上的芯片;且当安装时,在获得的芯片和衬底等之间具有足够的粘着能力;从而进行所谓的直接管芯粘接。
此外,本发明的晶片-粘合胶粘带能够在切割时用作切割带,且在安装时可以与易于剥离的粘合层一起使用,从而进行直接管芯-粘接,且晶片-粘合胶粘带的储存稳定性优异。进一步,当预先将晶片加热粘合到晶片上并在使用之前将切割带层压到粘结到晶片的管芯-粘接粘合层上时,本发明的晶片-粘合胶粘带可以优选用作上述切割带。进一步,根据本发明的晶片-粘合胶粘带,在拉伸后,元件之间的间隔充分,同时在辐射硬化后获得降低粘合力的效果。
基于下列实施例,将对本发明进行更详细的描述,但本发明不限于这些
实施例。
实施例
实施例1-4
(丙烯酸类共聚物A的合成)
通过作为原料的65质量份丙烯酸丁酯、25质量份丙烯酸2-羟乙酯、和10质量份丙烯酸的溶液自由基聚合,制备共聚物。然后,向该获得的共聚物中,逐滴滴加2-异氰酸酯乙基甲基丙烯酸酯(2-isocyanatethyl methacrylate)并与之反应,从而制备共聚物A。在该方法中,对逐滴添加的2-异氰酸酯乙基甲基丙烯酸酯的量和溶液自由基聚合的反应时间进行适当调整,以分别制备具有不同碳-碳双键量和分子量的共聚物A1-A5。
(晶片粘合胶粘带的制备)
向共聚物A1-A5中,以如下表1所示的混合比混入作为硬化剂的聚异氰酸酯化合物(商品名:Coronet L,Japan Polyurethane生产),和作为光聚合引发剂的α-羟基环己基苯基酮,从而分别获得辐射-固化可去除粘合剂。
将每种可去除粘合剂涂覆到高密度聚乙烯树脂膜(100μm)上,以使干燥后,可去除粘合剂的厚度为10μm,以分别制备胶粘带。将这些胶粘带的每一个和主要由25μm厚环氧树脂组成的膜-状粘合剂(用于管芯粘接)在室温下层压,从而制备如表1所示的实施例1-4和对比例1的相应晶片-粘合胶粘带。
(性能测试)
至于这样获得的晶片粘合胶粘带的下列性能1-6,如下所述进行测试。测试结果也显示在表1中。
1.凝胶分数
称取约0.05g可去除粘合层,在120℃下浸入50ml二甲苯24小时,然后通过200目的不锈钢金属网,对该获得的二甲苯进行过滤并在110℃下对金属网上的不溶组分干燥120分钟。然后,对干燥的不溶组分质量进行称重,通过下列公式评估凝胶分数:
凝胶分数(%)=(不溶组分质量/称取的可去除粘合层质量)×100
2.可去除粘合剂双键量
通过在黑色、真空中的溴加成反应,以质量增加法测定和定量确定约10g加热且干燥的可去除粘合剂中所含的碳-碳双键的量。
3.可伸延性(元件之间的间隔)
将上述制备的晶片-粘合胶粘带在80℃下加热粘附到晶片上10秒,然后将直径5英寸的硅晶片完全切割为3mm×3mm的大小,对这样切割的晶片进行紫外线-辐射硬化(不是在图样形状上而是在整个晶片上进行照射)。然后,在晶片扩径机(气压:2.0kg/cm2)上拉伸该获得的晶片,并测定拉伸的在纵向和横向上的元件间隔的长度,以估计平均值。元件间隔的长度包括切割时的40μm刀刃厚度。
基于元件间隔的大小(q),对可伸延性进行如下评价。
“○”:q100μm:可以满意地进行元件的图象识别。
″△”:100μm>q 80μm:难以进行元件的图象识别。
“×’:q<80μm:不可能进行元件的图象识别。
4.拾取成功率
在80℃下将上述制备的晶片-粘合胶粘带加热粘合到晶片上10秒,然后切割为10mm×10mm。然后,通过空气-冷却-型高压汞灯(80W/cm,照射距离:10cm),以200mJ/cm2的紫外线对可去除粘合层进行照射。然后通过管芯粘合机(NEC Machinery生产,商品名:CPS-100FM)进行拾取测试,以获得100块拾取芯片的拾取成功率。
5.剥离能力(剥离力)
根据JIS Z0237测量在UV照射之前和之后的剥离能力(UV照射量:1000mJ/cm2)。将晶片-粘合胶粘带热粘合至加热到80℃的硅晶片的镜面上,然后测定管芯-粘接粘合层和胶粘带之间的剥离力。在剥离角90°和剥离速度50mm/分钟的条件下进行该测试。
6.储存稳定性
在80℃下将上述制备的晶片-粘合胶粘带热粘合到晶片上10秒,并切割为10mm×10mm。然后,通过空气-冷却-型高压汞灯(80W/cm,照射距离:10cm),以200mJ/cm2的紫外线对可去除粘合层进行照射。然后,在室温条件(25℃,60%RH)下,将这样照射的晶片-粘合胶粘带保持2星期,获得拾取成功率。用该拾取成功率(%)评价并显示储存稳定性。
表1
实施例1 | 实施例2 | 实施例3 | 实施例4 | 对比例1 | |
共聚物种类 | A1 | A2 | A3 | A4 | A5 |
酸值(mgKOH/g) | 5.9 | 5.6 | 6.9 | 5.0 | 6.0 |
羟基值(mgKOH/g) | 55 | 34 | 40 | 34 | 50 |
所用共聚物的量(质量份) | 100 | 100 | 100 | 100 | 100 |
所用硬化剂的量(质量份) | 2 | 3 | 1.5 | 2 | 3 |
所用光聚合引发剂的量(质量份) | 1 | 1 | 1 | 1 | 1 |
凝胶分数(%) | 90.5 | 91.3 | 68.2 | 86.7 | 50.8 |
可去除粘合剂的双键量(meq/g) | 0.6 | 1.5 | 1.1 | 2.4 | 1.5 |
可伸延性(元素间隔) | ○ | ○ | ○ | △ | ○ |
拾取成功率(%) | 100 | 100 | 100 | 100 | 100 |
UV照射前的剥离能力(N/25mm) | 1.20 | 1.31 | 1.29 | 1.13 | 1.34 |
UV照射后的剥离能力(N/25mm) | 0.21 | 0.11 | 0.16 | 0.14 | 0.21 |
储存稳定性(%) | 100 | 100 | 100 | 100 | 54 |
从表1可以看出,本发明实施例1-3显示,除了拾取成功率和储存稳定性均为100%外,可伸延性也良好。此外,实施例4表明拉伸的元素间隔稍差,但拾取成功率和储存稳定性均为100%。与这些相反,对比例1显示储存稳定性显著地差。
从这些结果可以理解,本发明的晶片-粘合胶粘带可以在切割时用作切割带,且在安装时其可以与易于剥离的粘合层共同使用,从而能够进行直接管芯-粘接,且本发明的晶片-粘合胶粘带的储存稳定性优异。
独立地,以与实施例1相同的方法制备和测试晶片-粘合胶粘带的实例,只是将碳-碳双键的比变为0.3meq/g,在该晶片-粘合胶粘带的实例中辐射-固化可去除粘合层中所含碳-碳双键的比太低。结果,在该实例中获得的拾取成功率为25%。此时,在UV照射之前和之后的剥离力分别为1.42N/25mm和0.4N/25mm。
实施例5
将与实施例1相同的可去除粘合剂涂覆在高密度聚乙烯树脂膜(厚度:100μm)上,以使干燥后的粘合剂厚度为10μm,从而制备胶粘带。分别地,提供其上粘结有用于研磨的表面保护带的5-英寸直径的硅晶片。在80℃下将25-μm厚膜-状粘合剂(用于管芯粘接)加热粘合到其上不粘结保护带的晶片底面(ground surface)上10秒。将上述制备的胶粘带粘结到(管芯-粘接)粘合层上,其中该粘合层粘结到晶片上。从而,在60℃下对以胶粘带粘结的该获得的硅晶片进行100秒热处理,以从晶片上剥离表面保护带。
然后,以与实施例1相同的方法,将该硅晶片完全切割为3mm×3mm的大小、UV照射硬化、并拉伸,然后进行拾取测试。结果,表现出与实施例1相同的良好的可伸延性和拾取特性。此外,发现胶粘带的储存稳定性也良好。
从上述可以看出,当预先将管芯-粘接片加热粘结到晶片上,然后将本发明的胶粘带粘结和层压到所获得的粘结在晶片上的管芯-粘接粘合层上时,也可以优选使用本发明的胶粘带。
工业实用性
当制造半导体器件(例如硅晶片等)时,本发明的晶片-粘合胶粘带优选,例如,作为用于固定晶片等、切割、和与衬底或半导体芯片的搭接的粘合过程中的半导体晶片-粘合胶粘带。
虽然已经通过这些实施方式对本发明进行了描述,但除非另有说明,本发明不限于该描述的任何细节,而应在附属权利要求的精神和范围内进行宽范围的解释。
Claims (3)
1.一种晶片-粘合胶粘带,其在基底表面上具有辐射-固化可去除粘合层,
其中该辐射-固化可去除粘合层主要由丙烯酸类共聚物组成,在该共聚物主链上分别具有,至少一个含有辐射-固化碳-碳双键的基团、羟基、和含有羧基的基团,且所述辐射-固化可去除粘合层的凝胶分数为60%或更高。
2.一种晶片-粘合胶粘带,其在基底表面上依次具有辐射-固化可去除粘合层和管芯-粘接粘合层,
其中该辐射-固化可去除粘合层主要含有丙烯酸类共聚物,在该共聚物主链上分别具有,至少一个含有辐射-固化碳-碳双键的基团、羟基、和含有羧基的基团,且所述辐射-固化可去除粘合层的凝胶分数为60%或更高。
3.权利要求1或2的晶片-粘合胶粘带,其中该辐射-固化可去除粘合层中含有的碳-碳双键比为0.5-2.0meq/g。
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CNB2004800035062A Expired - Lifetime CN100358962C (zh) | 2003-02-05 | 2004-02-03 | 晶片-粘合胶粘带 |
Country Status (7)
Country | Link |
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US (2) | US20050249909A1 (zh) |
EP (1) | EP1591504B1 (zh) |
KR (1) | KR101170845B1 (zh) |
CN (1) | CN100358962C (zh) |
MY (1) | MY147594A (zh) |
TW (1) | TWI382468B (zh) |
WO (1) | WO2004069951A1 (zh) |
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JP2002158276A (ja) * | 2000-11-20 | 2002-05-31 | Hitachi Chem Co Ltd | ウエハ貼着用粘着シートおよび半導体装置 |
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JP4283596B2 (ja) * | 2003-05-29 | 2009-06-24 | 日東電工株式会社 | チップ状ワークの固定方法 |
-
2004
- 2004-02-03 KR KR1020057014333A patent/KR101170845B1/ko active IP Right Grant
- 2004-02-03 EP EP04707652A patent/EP1591504B1/en not_active Expired - Lifetime
- 2004-02-03 WO PCT/JP2004/001038 patent/WO2004069951A1/ja not_active Application Discontinuation
- 2004-02-03 CN CNB2004800035062A patent/CN100358962C/zh not_active Expired - Lifetime
- 2004-02-04 TW TW093102456A patent/TWI382468B/zh not_active IP Right Cessation
- 2004-02-05 MY MYPI20040343A patent/MY147594A/en unknown
-
2005
- 2005-07-19 US US11/184,001 patent/US20050249909A1/en not_active Abandoned
-
2008
- 2008-03-28 US US12/058,170 patent/US8722184B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
US20080299345A1 (en) | 2008-12-04 |
WO2004069951A1 (ja) | 2004-08-19 |
EP1591504B1 (en) | 2012-05-23 |
MY147594A (en) | 2012-12-31 |
US20050249909A1 (en) | 2005-11-10 |
EP1591504A1 (en) | 2005-11-02 |
TWI382468B (zh) | 2013-01-11 |
CN100358962C (zh) | 2008-01-02 |
TW200504877A (en) | 2005-02-01 |
EP1591504A4 (en) | 2006-04-05 |
US8722184B2 (en) | 2014-05-13 |
KR20050097979A (ko) | 2005-10-10 |
KR101170845B1 (ko) | 2012-08-02 |
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