CN1722387A - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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CN1722387A
CN1722387A CNA2005100776865A CN200510077686A CN1722387A CN 1722387 A CN1722387 A CN 1722387A CN A2005100776865 A CNA2005100776865 A CN A2005100776865A CN 200510077686 A CN200510077686 A CN 200510077686A CN 1722387 A CN1722387 A CN 1722387A
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李载晳
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DongbuAnam Semiconductor Inc
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Abstract

本发明公开了一种半导体器件及其制造方法。在所公开的方法中，通过在与有源区直接接触的PMD衬层和隔层绝缘层中提供足够的H2，并随后在后续热处理中逐渐地使H2扩散，来去除有源区中的不饱和键。该方法包括：形成具有侧壁隔离物的栅电极，形成源区及漏区，通过在栅电极和源区及漏区之上顺序地形成SiO2:H层、SiON:H层、和SiN:H层来形成PMD衬层，在PMD衬层之上形成隔层绝缘层，以及通过N2退火或Ar退火使在PMD衬层和隔层绝缘层中的氢扩散至源区及漏区。

Description

半导体器件及其制造方法
技术领域
本发明主要涉及半导体制造，更具体而言，涉及半导体器件及其制造方法。
背景技术
在半导体制造工艺中，形成前金属电介质(pre-metal dielectric，PMD)衬层以防止存在于硼磷硅酸盐玻璃(BPSG)、硼硅酸盐玻璃(BSG)、和/或磷硅酸盐玻璃(PSG)等中的硼(B)和磷(P)的扩散，其主要用于保护有源区(active area)(例如源区及漏区)，并用作PMD层。
当不饱和键存在于图像传感器的有源区表面上时，会使图像传感器中(例如，在将来自于由光致抗蚀剂形成的微透镜的光转换为电信号的光电二极管中)产生漏电流。在此情况下，可通过对有源区实施H2退火来去除不饱和键。
然而，当使过量的H2直接接触有源区时，会使半导体器件的特性变差。另一方面，当在制成金属线之后执行H2退火时，由于H2扩散的可能性大幅下降，导致H2退火变得不太有效。
发明内容
根据本发明的一个实施例的一种用于制造半导体器件的典型方法，其包括：在半导体衬底上形成具有侧壁隔离物的栅电极，以及在半导体衬底中形成源区及漏区；通过在栅电极和源区及漏区之上顺序地形成SiO2:H层、SiON:H层、和SiN:H层来形成PMD衬层；在PMD衬层之上形成隔层绝缘层；以及通过N2退火或Ar退火使在PMD衬层和隔层绝缘层中的氢扩散至源区及漏区。
在另一实施例中，SiO2:H层通过使用SiH4、O2、H2、和He的等离子体来形成。
在另一实施例中，SiON:H层通过使用SiH4、N2O、NH3、和He的等离子体来形成。
在另一实施例中，SiN:H层通过使用SiH4、NH3、和Ar的等离子体来形成。
在另一实施例中，SiO2:H层、SiON:H层、和SiN:H层通过同一沉积装置来形成。
在另一实施例中，隔层绝缘层通过使用SiH4、N、P、As、Sb或Bi的混合物、和H2的等离子体来形成。
在另一实施例中，SiON:H层形成厚度为约50至约200。
在另一实施例中，SiO2:H层和SiN:H层形成厚度为约100至约200。
在另一实施例中，隔层绝缘层通过HDP法来形成。
根据本发明的实施例的一种典型半导体器件，其包括：栅电极，在半导体衬底之上；源区及漏区；PMD衬层，在栅电极和源区及漏区之上；以及隔层绝缘层，在PMD衬层之上且包括掺杂有N、P、As、Sb、或Bi的SiO2:H层，在SiO2:H层之上的SiON:H层、和在SiON:H层之上的SiN:H层。
在另一实施例中，SiON:H层厚度为约50至约200。
在另一实施例中，SiO2:H层和SiN:H层厚度为约100至约200。
附图说明
图1至图3是截面图，示出了根据本发明的一种用于制造半导体器件的实例方法的连续阶段；
图4是通过现有技术方法制造的现有技术半导体器件的截面图。
在附图中，为了使多个层和区域清楚起见，放大了层的厚度。在附图和说明书中使用相同的参考标号来指代相同或相似的部分。应当理解的是当提到任何部分(例如层、膜、区、或极板)以任何方式置于别的部分“上”(例如，置于之上，位于之上，布置于之上，或形成于之上，等)时，意味着所标记的部分和别的部分接触，或者所标记的部分在其他部分上方，并有一个或多个中间部分介于其间。当提到某个部分和另一部分接触时，意味着两个部分之间无中间部分介于其间。
具体实施方式
图1至图3是截面图，示出了根据本发明的用于制造半导体器件的实例方法的连续阶段。
如图3所示，根据本发明所构造的实例半导体器件包括在半导体衬底102上的栅电极106和源区及漏区(121及122)。其还包括在栅电极106和源区及漏区(121及122)上的PMD衬层150。
图3的实例的PMD衬层150包括SiO2:H层151、SiON:H层152、和SiN:H层153。SiON:H层152形成厚度为约200、以及SiO2:H层151和SiN:H层153分别形成厚度为约100至约200。
在图3的实例中，隔层绝缘层180作为掺杂有N、P、As、或Sb的SiO2:H层形成于PMD衬层150上。
因此，由于足够的氢包含于与有源区121及122直接接触的隔层绝缘层180和PMD衬层150中，所以通过在后续的热处理中使H2扩散可去除不饱和键。
接下来参照图1-3描述一种制造半导体器件的实例方法。如图1所示，在用于形成栅绝缘层104的氧化层和用于形成栅电极106的多晶硅层顺序地形成于半导体衬底102上之后，通过光刻工艺使多晶硅层和氧化层形成图样，以形成栅绝缘层104及栅电极106。然后，使具有氧化层109和氮化层的侧壁隔离物108形成于栅电极106和栅绝缘层104的暴露侧壁上。
接下来，通过将高浓度或低浓度的杂质掺入半导体衬底102的源区及漏区(121及122)来形成半导体器件的源极和漏极(例如，通过利用离子掺入掩模来掺入杂质)。
在将半导体衬底102进行HF清洁处理之后，如图2所示，使SiO2:H层151形成于半导体衬底102的栅电极106和源区121及漏区122上，厚度约100-200。在所示实例中，通过PECVD法采用SiH4、O2、H2、和He的等离子体来形成SiO2:H层151，从而具有高浓度的H2。
具有高浓度的H2的SiO2:H层151在后续的退火处理中可向源区及漏区提供H2。
即，常规的SiO2:H层通过使用SiH4、O2、和Ar的等离子体来形成。然而，在一个实例中，SiO2:H层151通过使用SiH4、O2、H2、和He的等离子体来形成，并因此提高了其中的H2的浓度。
另外，SiO2:H层151缓冲了随后形成的SiN:H层153的高应力。
在所示实例中，在相同的沉积装置中，通过使用SiH4、N2O、NH3、和He的等离子体，在SiO2:H层151上形成厚度为约50至200的SiON:H层152。
由于SiON:H层152具有多余的H2，所以其在SiO2:H层151与SiN:H层153之间起到了应力缓冲作用。
通过使用SiH4、NH3、和Ar的等离子体使约100至200的厚度的SiN:H层153形成于SiON:H层152上，而在相同的沉积装置中随后形成PMD衬层150。
在所示处理中，PMD衬层由SiO2:H层151、SiON:H层152、和SiN:H层153构成，其不同于单氮化层。
接下来，如图3所示，通过采用SiH4、N、P、As、Sb或Bi的混合物、和H2的等离子体的高浓度等离子体(HDP)法，使多金属介质层的隔层绝缘层180形成于PMD衬层150上。
由于这样的隔层绝缘层180包括一组V元素，所以聚集效果很强。因为H2等离子体的缘故，所以隔层绝缘层180包含足够的H2以在后续处理中扩散至源区及漏区(121及122)。
当在通过常规的半导体工艺形成保护层之前或之后执行N2退火或Ar退火时，使包含于PMD衬层150和隔层绝缘层180中的H2扩散至源区及漏区(121及122)的表面，从而去除了不饱和键。
图4是通过现有技术方法制造的现有技术半导体器件的截面图。
如图4所示，在用于形成栅绝缘层104的氧化层和用于形成栅电极106的多晶硅层顺序地形成于半导体衬底上之后，通过光刻工艺使多晶硅层和氧化层形成图样，以形成栅绝缘层104及栅电极106。然后，使具有氧化层109和氮化层的侧壁隔离物108形成于栅电极106和栅绝缘层104的暴露的侧壁上。
接下来，通过将高或低浓度的杂质掺入半导体衬底102的源区及漏区(121及122)来形成半导体器件的源极和漏极(例如，通过利用离子掺入掩模来掺入杂质)。然后，沉积PMD衬层160，使其厚度为200至500。然后，通过O3-TEOS CVD法在PMD衬层160上沉积硼磷硅酸盐玻璃(borophosphosilicate glass，BPSG)，或通过HDP法沉积磷硅酸盐玻璃(phosphorus silicate galss，PSG)。接下来，执行化学机械抛光(chemical mechanical polishing，CMP)工艺以使其平坦化。
当接下来执行H2退火时，H2的扩散可能性下降。因此，扩散变得不太有效，并且由于未去除不饱和键而导致漏电流现象。
因此，在结合图1-3的上述实例中，通过在与有源区121及122直接接触的PMD衬层160和隔层绝缘层170中提供足够的H2，并随后在后续热处理中使H2逐渐扩散，来去除在有源区121及122中的不饱和键。
半导体器件及其制造方法的上述实例通过在与有源区直接接触的PMD衬层和隔层绝缘层中提供足够的H2，并随后在后续热处理中使H2逐渐扩散，来提供关于有源区中的不饱和键的优点。
因此，可解决在有源区中具有相当多的不饱和键的半导体器件(例如图像传感器)中的漏电流问题。
由以上所述，本领域内的一般技术人员应该易于想到半导体器件和制造半导体器件的方法，其优点在于通过在与有源区直接接触的PMD衬层和隔层绝缘层中提供足够的H2，并随后在后续热处理中使H2逐渐扩散，来去除有源区中的不饱和键。
一种用于制造半导体器件的实例方法，包括：在半导体衬底上形成具有侧壁隔离物的栅电极以及源区及漏区，通过在栅电极和源区及漏区上顺序地形成SiO2:H层、SiON:H层、和SiN:H层来形成PMD衬层，在PMD衬层上形成隔层绝缘层，以及通过N2退火或Ar退火使在PMD衬层和隔层绝缘层中的氢扩散至源区及漏区。
在一些实例中，SiO2:H层通过使用SiH4、O2、H2、和He的等离子体来形成。
在一些实例中，SiON:H层通过使用SiH4、N2O、NH3、和He的等离子体来形成。
在一些实例中，SiO2:H层、SiON:H层、和SiN:H层通过同一沉积装置来形成。
在一些实例中，隔层绝缘层通过使用SiH4、N、P、As、Sb或Bi的混合物、和H2的等离子体来形成。
在一些实例中，SiON:H层形成厚度为约50至约200。
在一些实例中，SiO2:H层和SiN:H层形成厚度为约100至约200。
在一些实例中，隔层绝缘层通过HDP法来形成。
一种公开的实例半导体器件，包括：栅电极和源区及漏区，在半导体衬底上；PMD衬层，在栅电极和源区及漏区上；以及隔层绝缘层，在PMD衬层上并由掺杂有N、P、As、Sb、或Bi的SiO2:H层组成，其中PMD衬层由SiO2:H层、SiON:H层、和SiN:H层顺序构成。
在一些实例中，SiON:H层厚度为约50至约200。在一些实例中，SiO2:H层和SiN:H层厚度为约100至约200。
值得注意的是，本申请要求于2004年6月22日提交的韩国专利申请第10-2004-0046496号的优先权，其全部内容结合于此作为参考。
以上所述仅为本发明的优选实施例而已，并不用于限制本发明，对于本领域的技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (12)

1.一种用于制造半导体器件的方法，包括：
在半导体衬底上形成具有侧壁隔离物的栅电极，以及在所述半导体衬底中形成源区及漏区；
通过在所述栅电极和所述源区及漏区之上顺序地形成SiO2:H层、SiON:H层、和SiN:H层来形成PMD衬层；
在所述PMD衬层之上形成隔层绝缘层；以及
通过N2退火或Ar退火使在所述PMD衬层和所述隔层绝缘层中的氢扩散至所述源区及漏区。
2.根据权利要求1所述的方法，其中，所述SiO2:H层通过使用SiH4、O2、H2、和He的等离子体来形成。
3.根据权利要求1所述的方法，其中，所述SiON:H层通过使用SiH4、N2O、NH3、和He的等离子体来形成。
4.根据权利要求1所述的方法，其中，所述SiN:H层通过使用SiH4、NH3、和Ar的等离子体来形成。
5.根据权利要求1所述的方法，其中，所述SiO2:H层、所述SiON:H层、和所述SiN:H层通过相同的沉积装置来形成。
6.根据权利要求1所述的方法，其中，所述隔层绝缘层通过使用SiH4、N、P、As、Sb或Bi的混合物、和H2的等离子体来形成。
7.根据权利要求1所述的方法，其中，所述SiON:H层形成厚度为约50至约200。
8.根据权利要求1所述的方法，其中，所述SiO2:H层和所述SiN:H层形成厚度为约100至约200。
9.根据权利要求1所述的方法，其中，所述隔层绝缘层通过HDP法来形成。
10.一种半导体器件，包括：
栅电极，在半导体衬底之上；
源区及漏区；
PMD衬层，在所述栅电极和所述源区及漏区之上；以及
隔层绝缘层，在PMD衬层之上，包括：掺杂有N、P、As、Sb、或Bi的SiO2:H层；在所述SiO2:H层之上的SiON:H层；以及在所述SiON:H层之上的SiN:H层。
11.根据权利要求10所述的半导体器件，其中，所述SiON:H层厚度为约50至约200。
12.根据权利要求10所述的半导体器件，其中，所述SiO2:H层和所述SiN:H层厚度为约100至约200。
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