CN1717749A - 使用预分配冗余(par)体系结构的存储器阵列的自修复 - Google Patents

使用预分配冗余(par)体系结构的存储器阵列的自修复 Download PDF

Info

Publication number
CN1717749A
CN1717749A CNA038256886A CN03825688A CN1717749A CN 1717749 A CN1717749 A CN 1717749A CN A038256886 A CNA038256886 A CN A038256886A CN 03825688 A CN03825688 A CN 03825688A CN 1717749 A CN1717749 A CN 1717749A
Authority
CN
China
Prior art keywords
piece
sub
nonvolatile memory
block
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA038256886A
Other languages
English (en)
Chinese (zh)
Inventor
内森·I·默恩
理查德·K·埃谷奇
林松巍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of CN1717749A publication Critical patent/CN1717749A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G11C29/4401—Indication or identification of errors, e.g. for repair for self repair

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
CNA038256886A 2002-12-20 2003-09-30 使用预分配冗余(par)体系结构的存储器阵列的自修复 Pending CN1717749A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/327,641 2002-12-20
US10/327,641 US20040123181A1 (en) 2002-12-20 2002-12-20 Self-repair of memory arrays using preallocated redundancy (PAR) architecture

Publications (1)

Publication Number Publication Date
CN1717749A true CN1717749A (zh) 2006-01-04

Family

ID=32594306

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA038256886A Pending CN1717749A (zh) 2002-12-20 2003-09-30 使用预分配冗余(par)体系结构的存储器阵列的自修复

Country Status (7)

Country Link
US (1) US20040123181A1 (enExample)
JP (1) JP2006511904A (enExample)
KR (1) KR20050084328A (enExample)
CN (1) CN1717749A (enExample)
AU (1) AU2003275306A1 (enExample)
TW (1) TWI312517B (enExample)
WO (1) WO2004061862A1 (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100550208C (zh) * 2006-03-29 2009-10-14 富晶半导体股份有限公司 熔丝检查电路及其检查方法
CN102237146A (zh) * 2010-04-30 2011-11-09 海力士半导体有限公司 半导体存储装置的修复电路和修复方法
CN104681099A (zh) * 2013-11-27 2015-06-03 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
CN104681098A (zh) * 2013-11-27 2015-06-03 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
CN104681096A (zh) * 2013-11-27 2015-06-03 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
CN106356099A (zh) * 2015-07-14 2017-01-25 爱思开海力士有限公司 半导体装置及其修复方法
CN112908397A (zh) * 2021-03-22 2021-06-04 西安紫光国芯半导体有限公司 Dram存储阵列的修复方法及相关设备
CN114550807A (zh) * 2022-01-10 2022-05-27 苏州萨沙迈半导体有限公司 存储器的自修复电路、芯片
CN114999555A (zh) * 2021-03-01 2022-09-02 长鑫存储技术有限公司 熔丝故障修复电路
CN119091949A (zh) * 2024-08-13 2024-12-06 无锡众星微系统技术有限公司 一种芯片内memory修复系统及方法

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7154886B2 (en) 2002-07-22 2006-12-26 Qlogic Corporation Method and system for primary blade selection in a multi-module fiber channel switch
US7334046B1 (en) 2002-08-05 2008-02-19 Qlogic, Corporation System and method for optimizing frame routing in a network
US7397768B1 (en) 2002-09-11 2008-07-08 Qlogic, Corporation Zone management in a multi-module fibre channel switch
US7362717B1 (en) 2002-10-03 2008-04-22 Qlogic, Corporation Method and system for using distributed name servers in multi-module fibre channel switches
US7319669B1 (en) 2002-11-22 2008-01-15 Qlogic, Corporation Method and system for controlling packet flow in networks
US7185225B2 (en) * 2002-12-02 2007-02-27 Marvell World Trade Ltd. Self-reparable semiconductor and method thereof
US20060001669A1 (en) 2002-12-02 2006-01-05 Sehat Sutardja Self-reparable semiconductor and method thereof
US7340644B2 (en) * 2002-12-02 2008-03-04 Marvell World Trade Ltd. Self-reparable semiconductor and method thereof
DE60320745D1 (de) * 2003-02-12 2008-06-19 Infineon Technologies Ag Verfahren und MBISR (Memory Built-In Self Repair) zum Reparieren eines Speichers
US7463646B2 (en) 2003-07-16 2008-12-09 Qlogic Corporation Method and system for fibre channel arbitrated loop acceleration
US7471635B2 (en) 2003-07-16 2008-12-30 Qlogic, Corporation Method and apparatus for test pattern generation
US7620059B2 (en) 2003-07-16 2009-11-17 Qlogic, Corporation Method and apparatus for accelerating receive-modify-send frames in a fibre channel network
US7355966B2 (en) * 2003-07-16 2008-04-08 Qlogic, Corporation Method and system for minimizing disruption in common-access networks
US7388843B2 (en) * 2003-07-16 2008-06-17 Qlogic, Corporation Method and apparatus for testing loop pathway integrity in a fibre channel arbitrated loop
US7453802B2 (en) 2003-07-16 2008-11-18 Qlogic, Corporation Method and apparatus for detecting and removing orphaned primitives in a fibre channel network
US7525910B2 (en) 2003-07-16 2009-04-28 Qlogic, Corporation Method and system for non-disruptive data capture in networks
US7630384B2 (en) 2003-07-21 2009-12-08 Qlogic, Corporation Method and system for distributing credit in fibre channel systems
US7646767B2 (en) 2003-07-21 2010-01-12 Qlogic, Corporation Method and system for programmable data dependant network routing
US7580354B2 (en) 2003-07-21 2009-08-25 Qlogic, Corporation Multi-speed cut through operation in fibre channel switches
US7466700B2 (en) 2003-07-21 2008-12-16 Qlogic, Corporation LUN based hard zoning in fibre channel switches
US7792115B2 (en) 2003-07-21 2010-09-07 Qlogic, Corporation Method and system for routing and filtering network data packets in fibre channel systems
US7522529B2 (en) 2003-07-21 2009-04-21 Qlogic, Corporation Method and system for detecting congestion and over subscription in a fibre channel network
US7430175B2 (en) 2003-07-21 2008-09-30 Qlogic, Corporation Method and system for managing traffic in fibre channel systems
US7525983B2 (en) 2003-07-21 2009-04-28 Qlogic, Corporation Method and system for selecting virtual lanes in fibre channel switches
US7477655B2 (en) 2003-07-21 2009-01-13 Qlogic, Corporation Method and system for power control of fibre channel switches
US7894348B2 (en) 2003-07-21 2011-02-22 Qlogic, Corporation Method and system for congestion control in a fibre channel switch
US7558281B2 (en) 2003-07-21 2009-07-07 Qlogic, Corporation Method and system for configuring fibre channel ports
US7512067B2 (en) 2003-07-21 2009-03-31 Qlogic, Corporation Method and system for congestion control based on optimum bandwidth allocation in a fibre channel switch
US7447224B2 (en) 2003-07-21 2008-11-04 Qlogic, Corporation Method and system for routing fibre channel frames
US7522522B2 (en) 2003-07-21 2009-04-21 Qlogic, Corporation Method and system for reducing latency and congestion in fibre channel switches
US7583597B2 (en) 2003-07-21 2009-09-01 Qlogic Corporation Method and system for improving bandwidth and reducing idles in fibre channel switches
US7573909B2 (en) 2003-07-21 2009-08-11 Qlogic, Corporation Method and system for programmable data dependant network routing
US7406092B2 (en) 2003-07-21 2008-07-29 Qlogic, Corporation Programmable pseudo virtual lanes for fibre channel systems
US7684401B2 (en) 2003-07-21 2010-03-23 Qlogic, Corporation Method and system for using extended fabric features with fibre channel switch elements
US7420982B2 (en) 2003-07-21 2008-09-02 Qlogic, Corporation Method and system for keeping a fibre channel arbitrated loop open during frame gaps
KR100548274B1 (ko) * 2003-07-23 2006-02-02 엘지전자 주식회사 세탁기의 포량 검출방법
US7352701B1 (en) 2003-09-19 2008-04-01 Qlogic, Corporation Buffer to buffer credit recovery for in-line fibre channel credit extension devices
US7480293B2 (en) 2004-02-05 2009-01-20 Qlogic, Corporation Method and system for preventing deadlock in fibre channel fabrics using frame priorities
US7564789B2 (en) 2004-02-05 2009-07-21 Qlogic, Corporation Method and system for reducing deadlock in fibre channel fabrics using virtual lanes
US7340167B2 (en) * 2004-04-23 2008-03-04 Qlogic, Corporation Fibre channel transparent switch for mixed switch fabrics
US7930377B2 (en) 2004-04-23 2011-04-19 Qlogic, Corporation Method and system for using boot servers in networks
US7404020B2 (en) * 2004-07-20 2008-07-22 Qlogic, Corporation Integrated fibre channel fabric controller
US7380030B2 (en) 2004-10-01 2008-05-27 Qlogic, Corp. Method and system for using an in-line credit extender with a host bus adapter
US7593997B2 (en) 2004-10-01 2009-09-22 Qlogic, Corporation Method and system for LUN remapping in fibre channel networks
US7411958B2 (en) 2004-10-01 2008-08-12 Qlogic, Corporation Method and system for transferring data directly between storage devices in a storage area network
US8295299B2 (en) 2004-10-01 2012-10-23 Qlogic, Corporation High speed fibre channel switch element
US7519058B2 (en) 2005-01-18 2009-04-14 Qlogic, Corporation Address translation in fibre channel switches
JP2008033995A (ja) * 2006-07-26 2008-02-14 Matsushita Electric Ind Co Ltd メモリシステム
JP4982173B2 (ja) * 2006-12-27 2012-07-25 株式会社東芝 半導体記憶装置
US8868783B2 (en) * 2007-03-27 2014-10-21 Cisco Technology, Inc. Abstract representation of subnet utilization in an address block
US7895482B2 (en) * 2007-04-26 2011-02-22 Agere Systems Inc. Embedded memory repair
US8358540B2 (en) 2010-01-13 2013-01-22 Micron Technology, Inc. Access line dependent biasing schemes
US8718079B1 (en) 2010-06-07 2014-05-06 Marvell International Ltd. Physical layer devices for network switches
US8873320B2 (en) * 2011-08-17 2014-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. DRAM repair architecture for wide I/O DRAM based 2.5D/3D system chips
US8976604B2 (en) 2012-02-13 2015-03-10 Macronix International Co., Lt. Method and apparatus for copying data with a memory array having redundant memory
US9165680B2 (en) 2013-03-11 2015-10-20 Macronix International Co., Ltd. Memory integrated circuit with a page register/status memory capable of storing only a subset of row blocks of main column blocks
US9773571B2 (en) 2014-12-16 2017-09-26 Macronix International Co., Ltd. Memory repair redundancy with array cache redundancy
US20160218286A1 (en) 2015-01-23 2016-07-28 Macronix International Co., Ltd. Capped contact structure with variable adhesion layer thickness
US9514815B1 (en) 2015-05-13 2016-12-06 Macronix International Co., Ltd. Verify scheme for ReRAM
CN106548809A (zh) 2015-09-22 2017-03-29 飞思卡尔半导体公司 处理缺陷非易失性存储器
US9965346B2 (en) 2016-04-12 2018-05-08 International Business Machines Corporation Handling repaired memory array elements in a memory of a computer system
US9691478B1 (en) 2016-04-22 2017-06-27 Macronix International Co., Ltd. ReRAM array configuration for bipolar operation
US9959928B1 (en) 2016-12-13 2018-05-01 Macronix International Co., Ltd. Iterative method and apparatus to program a programmable resistance memory element using stabilizing pulses
CN108735268B (zh) 2017-04-19 2024-01-30 恩智浦美国有限公司 非易失性存储器修复电路
CN107240421B (zh) * 2017-05-19 2020-09-01 上海华虹宏力半导体制造有限公司 存储器的测试方法及装置、存储介质和测试终端
CN119274608A (zh) * 2024-09-19 2025-01-07 新存微科技(北京)有限责任公司 存储器件

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313424A (en) * 1992-03-17 1994-05-17 International Business Machines Corporation Module level electronic redundancy
US5452251A (en) * 1992-12-03 1995-09-19 Fujitsu Limited Semiconductor memory device for selecting and deselecting blocks of word lines
US5646896A (en) * 1995-10-31 1997-07-08 Hyundai Electronics America Memory device with reduced number of fuses
EP0797145B1 (en) * 1996-03-22 2002-06-12 STMicroelectronics S.r.l. Sectorized electrically erasable and programmable non-volatile memory device with redundancy
US5987632A (en) * 1997-05-07 1999-11-16 Lsi Logic Corporation Method of testing memory operations employing self-repair circuitry and permanently disabling memory locations
US5920515A (en) * 1997-09-26 1999-07-06 Advanced Micro Devices, Inc. Register-based redundancy circuit and method for built-in self-repair in a semiconductor memory device
JP2000030483A (ja) * 1998-07-15 2000-01-28 Mitsubishi Electric Corp 大規模メモリ用ｂｉｓｔ回路
US6067262A (en) * 1998-12-11 2000-05-23 Lsi Logic Corporation Redundancy analysis for embedded memories with built-in self test and built-in self repair
US6574763B1 (en) * 1999-12-28 2003-06-03 International Business Machines Corporation Method and apparatus for semiconductor integrated circuit testing and burn-in
DE10110469A1 (de) * 2001-03-05 2002-09-26 Infineon Technologies Ag Integrierter Speicher und Verfahren zum Testen und Reparieren desselben
US6904552B2 (en) * 2001-03-15 2005-06-07 Micron Technolgy, Inc. Circuit and method for test and repair
US6347056B1 (en) * 2001-05-16 2002-02-12 Motorola, Inc. Recording of result information in a built-in self-test circuit and method therefor

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100550208C (zh) * 2006-03-29 2009-10-14 富晶半导体股份有限公司 熔丝检查电路及其检查方法
CN102237146A (zh) * 2010-04-30 2011-11-09 海力士半导体有限公司 半导体存储装置的修复电路和修复方法
CN104681098B (zh) * 2013-11-27 2017-12-05 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
CN104681098A (zh) * 2013-11-27 2015-06-03 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
CN104681096A (zh) * 2013-11-27 2015-06-03 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
CN104681099A (zh) * 2013-11-27 2015-06-03 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
CN104681099B (zh) * 2013-11-27 2018-02-23 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
CN106356099A (zh) * 2015-07-14 2017-01-25 爱思开海力士有限公司 半导体装置及其修复方法
CN114999555A (zh) * 2021-03-01 2022-09-02 长鑫存储技术有限公司 熔丝故障修复电路
CN114999555B (zh) * 2021-03-01 2024-05-03 长鑫存储技术有限公司 熔丝故障修复电路
CN112908397A (zh) * 2021-03-22 2021-06-04 西安紫光国芯半导体有限公司 Dram存储阵列的修复方法及相关设备
CN112908397B (zh) * 2021-03-22 2023-10-13 西安紫光国芯半导体有限公司 Dram存储阵列的修复方法及相关设备
CN114550807A (zh) * 2022-01-10 2022-05-27 苏州萨沙迈半导体有限公司 存储器的自修复电路、芯片
CN119091949A (zh) * 2024-08-13 2024-12-06 无锡众星微系统技术有限公司 一种芯片内memory修复系统及方法

Also Published As

Publication number Publication date
JP2006511904A (ja) 2006-04-06
TWI312517B (en) 2009-07-21
US20040123181A1 (en) 2004-06-24
TW200428402A (en) 2004-12-16
WO2004061862A1 (en) 2004-07-22
AU2003275306A1 (en) 2004-07-29
KR20050084328A (ko) 2005-08-26

Similar Documents

Publication Publication Date Title
CN1717749A (zh) 使用预分配冗余(par)体系结构的存储器阵列的自修复
JP3888631B2 (ja) 半導体メモリおよび半導体メモリの検査方法並びに製造方法
US6667918B2 (en) Self-repair of embedded memory arrays
KR100327136B1 (ko) 반도체 메모리 장치 및 이 장치의 병렬 비트 테스트 방법
KR101131557B1 (ko) 반도체 메모리 장치의 리페어 회로 및 리페어 방법
US8570820B2 (en) Selectable repair pass masking
US20050024956A1 (en) Column redundancy for digital multilevel nonvolatile memory
US11430537B2 (en) Error-correcting code-assisted memory repair
US20130051158A1 (en) Integrated circuit, testing apparatus for integrated circuit, and method of testing integrated circuit
US20050166111A1 (en) Memory built-in self test circuit with full error mapping capability
US7116592B2 (en) Semiconductor device and test method thereof
US7266028B1 (en) Method and apparatus for bit mapping memories in programmable logic device integrated circuits during at-speed testing
WO2008050527A1 (en) Semiconductor testing apparatus and method of testing semiconductor memory
TW201503145A (zh) 在ｎａｎｄ陣列中儲存及讀取可靠資訊的方法及裝置
US7739560B2 (en) Nonvolatile semiconductor memory device and method of self-testing the same
US7688640B2 (en) Flash memory device and method for driving the same
JP2007525754A (ja) メモリデバイスのテストおよびプログラミングの方法並びにそのシステム
JP2007004955A (ja) 不揮発性半導体記憶装置
US7518918B2 (en) Method and apparatus for repairing embedded memory in an integrated circuit
US20060069528A9 (en) Memory defect remedy analyzing method and memory test instrument
KR20100085657A (ko) 불휘발성 메모리 소자 및 그 동작 방법
US11682470B2 (en) Memory device and operating method thereof
US7461306B2 (en) Output data compression scheme using tri-state
KR100521320B1 (ko) 불 휘발성 메모리 장치 및 그것의 프로그램 방법
JP2009176393A (ja) 不揮発性半導体記憶装置及びその自動テスト方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication