AU2003275306A1 - Self-repair of memory arrays using preallocated redundancy (par) architecture - Google Patents

Self-repair of memory arrays using preallocated redundancy (par) architecture

Info

Publication number
AU2003275306A1
AU2003275306A1 AU2003275306A AU2003275306A AU2003275306A1 AU 2003275306 A1 AU2003275306 A1 AU 2003275306A1 AU 2003275306 A AU2003275306 A AU 2003275306A AU 2003275306 A AU2003275306 A AU 2003275306A AU 2003275306 A1 AU2003275306 A1 AU 2003275306A1
Authority
AU
Australia
Prior art keywords
preallocated
par
redundancy
repair
architecture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003275306A
Other languages
English (en)
Inventor
Richard K. Eguchi
Sung-Wei Lin
Nathan I. Moon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003275306A1 publication Critical patent/AU2003275306A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G11C29/4401—Indication or identification of errors, e.g. for repair for self repair
AU2003275306A 2002-12-20 2003-09-30 Self-repair of memory arrays using preallocated redundancy (par) architecture Abandoned AU2003275306A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/327,641 2002-12-20
US10/327,641 US20040123181A1 (en) 2002-12-20 2002-12-20 Self-repair of memory arrays using preallocated redundancy (PAR) architecture
PCT/US2003/030863 WO2004061862A1 (en) 2002-12-20 2003-09-30 Self-repair of memory arrays using preallocated redundancy (par) architecture

Publications (1)

Publication Number Publication Date
AU2003275306A1 true AU2003275306A1 (en) 2004-07-29

Family

ID=32594306

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003275306A Abandoned AU2003275306A1 (en) 2002-12-20 2003-09-30 Self-repair of memory arrays using preallocated redundancy (par) architecture

Country Status (7)

Country Link
US (1) US20040123181A1 (enExample)
JP (1) JP2006511904A (enExample)
KR (1) KR20050084328A (enExample)
CN (1) CN1717749A (enExample)
AU (1) AU2003275306A1 (enExample)
TW (1) TWI312517B (enExample)
WO (1) WO2004061862A1 (enExample)

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CN104681098B (zh) * 2013-11-27 2017-12-05 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
CN104681099B (zh) * 2013-11-27 2018-02-23 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
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CN107240421B (zh) * 2017-05-19 2020-09-01 上海华虹宏力半导体制造有限公司 存储器的测试方法及装置、存储介质和测试终端
CN114999555B (zh) * 2021-03-01 2024-05-03 长鑫存储技术有限公司 熔丝故障修复电路
CN112908397B (zh) * 2021-03-22 2023-10-13 西安紫光国芯半导体有限公司 Dram存储阵列的修复方法及相关设备
CN114550807B (zh) * 2022-01-10 2024-09-24 苏州萨沙迈半导体有限公司 存储器的自修复电路、芯片
CN119091949A (zh) * 2024-08-13 2024-12-06 无锡众星微系统技术有限公司 一种芯片内memory修复系统及方法
CN119274608A (zh) * 2024-09-19 2025-01-07 新存微科技(北京)有限责任公司 存储器件

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Also Published As

Publication number Publication date
JP2006511904A (ja) 2006-04-06
TWI312517B (en) 2009-07-21
CN1717749A (zh) 2006-01-04
US20040123181A1 (en) 2004-06-24
TW200428402A (en) 2004-12-16
WO2004061862A1 (en) 2004-07-22
KR20050084328A (ko) 2005-08-26

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Legal Events

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MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase