TWI312517B - Self-repair of memory arrays using preallocated redundancy (par) architecture - Google Patents

Self-repair of memory arrays using preallocated redundancy (par) architecture Download PDF

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Publication number
TWI312517B
TWI312517B TW092130655A TW92130655A TWI312517B TW I312517 B TWI312517 B TW I312517B TW 092130655 A TW092130655 A TW 092130655A TW 92130655 A TW92130655 A TW 92130655A TW I312517 B TWI312517 B TW I312517B
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TW
Taiwan
Prior art keywords
block
memory
sub
volatile memory
fault
Prior art date
Application number
TW092130655A
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English (en)
Chinese (zh)
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TW200428402A (en
Inventor
I Moon Nathan
K Eguchi Richard
Lin Sung-Wei
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Freescale Semiconductor Inc
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Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Publication of TW200428402A publication Critical patent/TW200428402A/zh
Application granted granted Critical
Publication of TWI312517B publication Critical patent/TWI312517B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G11C29/4401—Indication or identification of errors, e.g. for repair for self repair

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
TW092130655A 2002-12-20 2003-11-03 Self-repair of memory arrays using preallocated redundancy (par) architecture TWI312517B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/327,641 US20040123181A1 (en) 2002-12-20 2002-12-20 Self-repair of memory arrays using preallocated redundancy (PAR) architecture

Publications (2)

Publication Number Publication Date
TW200428402A TW200428402A (en) 2004-12-16
TWI312517B true TWI312517B (en) 2009-07-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW092130655A TWI312517B (en) 2002-12-20 2003-11-03 Self-repair of memory arrays using preallocated redundancy (par) architecture

Country Status (7)

Country Link
US (1) US20040123181A1 (enExample)
JP (1) JP2006511904A (enExample)
KR (1) KR20050084328A (enExample)
CN (1) CN1717749A (enExample)
AU (1) AU2003275306A1 (enExample)
TW (1) TWI312517B (enExample)
WO (1) WO2004061862A1 (enExample)

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CN104681099B (zh) * 2013-11-27 2018-02-23 北京兆易创新科技股份有限公司 一种非易失性存储器的修复方法
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CN114999555B (zh) * 2021-03-01 2024-05-03 长鑫存储技术有限公司 熔丝故障修复电路
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Also Published As

Publication number Publication date
JP2006511904A (ja) 2006-04-06
CN1717749A (zh) 2006-01-04
US20040123181A1 (en) 2004-06-24
TW200428402A (en) 2004-12-16
WO2004061862A1 (en) 2004-07-22
AU2003275306A1 (en) 2004-07-29
KR20050084328A (ko) 2005-08-26

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