CN1696235A - 阻挡层抛光溶液 - Google Patents
阻挡层抛光溶液 Download PDFInfo
- Publication number
- CN1696235A CN1696235A CNA2005100673500A CN200510067350A CN1696235A CN 1696235 A CN1696235 A CN 1696235A CN A2005100673500 A CNA2005100673500 A CN A2005100673500A CN 200510067350 A CN200510067350 A CN 200510067350A CN 1696235 A CN1696235 A CN 1696235A
- Authority
- CN
- China
- Prior art keywords
- acid
- polishing solution
- polishing
- solution
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 105
- 230000004888 barrier function Effects 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 47
- 239000002184 metal Substances 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000003112 inhibitor Substances 0.000 claims abstract description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 230000003628 erosive effect Effects 0.000 claims abstract description 11
- 239000000203 mixture Substances 0.000 claims description 37
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 35
- GETQZCLCWQTVFV-UHFFFAOYSA-N anhydrous trimethylamine Natural products CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 33
- 239000003795 chemical substances by application Substances 0.000 claims description 27
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 27
- 239000002253 acid Substances 0.000 claims description 24
- -1 benzyl TMA Chemical compound 0.000 claims description 23
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 21
- 150000003863 ammonium salts Chemical class 0.000 claims description 19
- 229910052742 iron Inorganic materials 0.000 claims description 17
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 10
- 150000003839 salts Chemical class 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 9
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims description 7
- 125000004432 carbon atom Chemical group C* 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 6
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 claims description 6
- KYVBNYUBXIEUFW-UHFFFAOYSA-N 1,1,3,3-tetramethylguanidine Chemical compound CN(C)C(=N)N(C)C KYVBNYUBXIEUFW-UHFFFAOYSA-N 0.000 claims description 4
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 claims description 4
- SJIXRGNQPBQWMK-UHFFFAOYSA-N 2-(diethylamino)ethyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCOC(=O)C(C)=C SJIXRGNQPBQWMK-UHFFFAOYSA-N 0.000 claims description 4
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 claims description 4
- WHBMMWSBFZVSSR-UHFFFAOYSA-N 3-hydroxybutyric acid Chemical compound CC(O)CC(O)=O WHBMMWSBFZVSSR-UHFFFAOYSA-N 0.000 claims description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- NSOXQYCFHDMMGV-UHFFFAOYSA-N Tetrakis(2-hydroxypropyl)ethylenediamine Chemical compound CC(O)CN(CC(C)O)CCN(CC(C)O)CC(C)O NSOXQYCFHDMMGV-UHFFFAOYSA-N 0.000 claims description 4
- CUBCNYWQJHBXIY-UHFFFAOYSA-N benzoic acid;2-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=CC=C1.OC(=O)C1=CC=CC=C1O CUBCNYWQJHBXIY-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 4
- YIOJGTBNHQAVBO-UHFFFAOYSA-N dimethyl-bis(prop-2-enyl)azanium Chemical compound C=CC[N+](C)(C)CC=C YIOJGTBNHQAVBO-UHFFFAOYSA-N 0.000 claims description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims description 4
- JFCQEDHGNNZCLN-UHFFFAOYSA-N glutaric acid Chemical compound OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 claims description 4
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 claims description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 3
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000013543 active substance Substances 0.000 claims description 3
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 3
- HCPOCMMGKBZWSJ-UHFFFAOYSA-N ethyl 3-hydrazinyl-3-oxopropanoate Chemical compound CCOC(=O)CC(=O)NN HCPOCMMGKBZWSJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004310 lactic acid Substances 0.000 claims description 3
- 235000014655 lactic acid Nutrition 0.000 claims description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 3
- 239000011976 maleic acid Substances 0.000 claims description 3
- 235000006408 oxalic acid Nutrition 0.000 claims description 3
- 229940095064 tartrate Drugs 0.000 claims description 3
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 3
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 claims description 2
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 claims description 2
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims description 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims description 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001263 FEMA 3042 Substances 0.000 claims description 2
- 239000004471 Glycine Substances 0.000 claims description 2
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- WRQNANDWMGAFTP-UHFFFAOYSA-N Methylacetoacetic acid Chemical compound COC(=O)CC(C)=O WRQNANDWMGAFTP-UHFFFAOYSA-N 0.000 claims description 2
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 claims description 2
- 235000003704 aspartic acid Nutrition 0.000 claims description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- 229950004394 ditiocarb Drugs 0.000 claims description 2
- 229950006191 gluconic acid Drugs 0.000 claims description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- 235000019260 propionic acid Nutrition 0.000 claims description 2
- 229940079877 pyrogallol Drugs 0.000 claims description 2
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 2
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 2
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 claims description 2
- 235000015523 tannic acid Nutrition 0.000 claims description 2
- 229940033123 tannic acid Drugs 0.000 claims description 2
- 229920002258 tannic acid Polymers 0.000 claims description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 claims description 2
- WSOBVZOYDURROI-UHFFFAOYSA-N 2,2,2-trihydroxyacetic acid Chemical compound OC(=O)C(O)(O)O WSOBVZOYDURROI-UHFFFAOYSA-N 0.000 claims 1
- TWQLGWHGKWMBPI-UHFFFAOYSA-N C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.C(CN)N.OC=C Chemical compound C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.C(C)(=O)O.C(CN)N.OC=C TWQLGWHGKWMBPI-UHFFFAOYSA-N 0.000 claims 1
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 claims 1
- 239000003989 dielectric material Substances 0.000 abstract description 4
- 239000007800 oxidant agent Substances 0.000 abstract description 2
- 150000002739 metals Chemical class 0.000 abstract 2
- 239000008139 complexing agent Substances 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 58
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 36
- 239000002245 particle Substances 0.000 description 29
- 239000010949 copper Substances 0.000 description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 229910052802 copper Inorganic materials 0.000 description 22
- 229910052814 silicon oxide Inorganic materials 0.000 description 17
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 13
- 239000000654 additive Substances 0.000 description 11
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 9
- 239000012964 benzotriazole Substances 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 230000027772 skotomorphogenesis Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 230000000996 additive effect Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 7
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 230000009931 harmful effect Effects 0.000 description 4
- 229910052809 inorganic oxide Inorganic materials 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229920002635 polyurethane Polymers 0.000 description 4
- 239000004814 polyurethane Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005660 chlorination reaction Methods 0.000 description 3
- 239000013530 defoamer Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 239000012776 electronic material Substances 0.000 description 3
- 239000011572 manganese Substances 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- 238000012856 packing Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229920002125 Sokalan® Polymers 0.000 description 2
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 2
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 229910001573 adamantine Inorganic materials 0.000 description 2
- 125000002877 alkyl aryl group Chemical group 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 2
- OCBHHZMJRVXXQK-UHFFFAOYSA-M benzyl-dimethyl-tetradecylazanium;chloride Chemical compound [Cl-].CCCCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 OCBHHZMJRVXXQK-UHFFFAOYSA-M 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052500 inorganic mineral Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000011707 mineral Substances 0.000 description 2
- 235000010755 mineral Nutrition 0.000 description 2
- JPMIIZHYYWMHDT-UHFFFAOYSA-N octhilinone Chemical compound CCCCCCCCN1SC=CC1=O JPMIIZHYYWMHDT-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 2
- JRKICGRDRMAZLK-UHFFFAOYSA-L persulfate group Chemical group S(=O)(=O)([O-])OOS(=O)(=O)[O-] JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 2
- 239000004584 polyacrylic acid Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
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- 229960001866 silicon dioxide Drugs 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 159000000000 sodium salts Chemical class 0.000 description 2
- 125000003107 substituted aryl group Chemical group 0.000 description 2
- NMJKIRUDPFBRHW-UHFFFAOYSA-N titanium Chemical compound [Ti].[Ti] NMJKIRUDPFBRHW-UHFFFAOYSA-N 0.000 description 2
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 2
- 229920003169 water-soluble polymer Polymers 0.000 description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
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- JXOOCQBAIRXOGG-UHFFFAOYSA-N [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] Chemical compound [B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[B].[Al] JXOOCQBAIRXOGG-UHFFFAOYSA-N 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
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- 239000003513 alkali Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000003868 ammonium compounds Chemical class 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- VBQDSLGFSUGBBE-UHFFFAOYSA-N benzyl(triethyl)azanium Chemical class CC[N+](CC)(CC)CC1=CC=CC=C1 VBQDSLGFSUGBBE-UHFFFAOYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001868 cobalt Chemical class 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000004673 fluoride salts Chemical class 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 229930182470 glycoside Natural products 0.000 description 1
- 150000002338 glycosides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- APLYTANMTDCWTA-UHFFFAOYSA-L magnesium;phthalate Chemical compound [Mg+2].[O-]C(=O)C1=CC=CC=C1C([O-])=O APLYTANMTDCWTA-UHFFFAOYSA-L 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 229910000000 metal hydroxide Inorganic materials 0.000 description 1
- 150000004692 metal hydroxides Chemical class 0.000 description 1
- 229940050176 methyl chloride Drugs 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- YPJKMVATUPSWOH-UHFFFAOYSA-N nitrooxidanyl Chemical compound [O][N+]([O-])=O YPJKMVATUPSWOH-UHFFFAOYSA-N 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical compound OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Inorganic materials [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 150000004965 peroxy acids Chemical class 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000003352 sequestering agent Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000019635 sulfation Effects 0.000 description 1
- 238000005670 sulfation reaction Methods 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- QHOKENWFMZXSEU-UHFFFAOYSA-N tetrabutylazanium;nitrate Chemical compound [O-][N+]([O-])=O.CCCC[N+](CCCC)(CCCC)CCCC QHOKENWFMZXSEU-UHFFFAOYSA-N 0.000 description 1
- 229910001428 transition metal ion Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/07—Roasting devices for outdoor use; Barbecues
- A47J37/0704—Roasting devices for outdoor use; Barbecues with horizontal fire box
- A47J37/0713—Roasting devices for outdoor use; Barbecues with horizontal fire box with gas burners
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/07—Roasting devices for outdoor use; Barbecues
- A47J37/0786—Accessories
- A47J2037/0795—Adjustable food supports, e.g. for height adjustment
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47J—KITCHEN EQUIPMENT; COFFEE MILLS; SPICE MILLS; APPARATUS FOR MAKING BEVERAGES
- A47J37/00—Baking; Roasting; Grilling; Frying
- A47J37/06—Roasters; Grills; Sandwich grills
- A47J37/07—Roasting devices for outdoor use; Barbecues
- A47J37/0786—Accessories
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Food Science & Technology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
适用于在非铁互连金属的存在下优先去除阻挡层材料并且具有有限的电介质侵蚀的抛光溶液。该抛光溶液包含0至20wt%的氧化剂,至少0.001wt%的抑制剂以便降低该非铁互连金属的去除速率,10ppb至4wt%的配位剂,0至50wt%的研磨剂和余量的水;而且该溶液具有小于7的pH。
Description
技术领域
本发明涉及去除阻挡层金属的化学机械平坦化(CMP)配方,且更具体地,涉及集成电路器件中存在互连结构时选择性去除阻挡层金属的抛光组合物。
背景技术
近年来,半导体工业越来约多地依赖铜的电互连形成集成电路。这些铜互连具有低的电阻率和高的抗电迁移性。由于铜在许多电介质材料中非常易溶,例如二氧化硅和低K或掺杂型二氧化硅,必需用扩散阻挡层来阻止铜向下面的电介质层中扩散。典型的阻挡层材料包括钽,氮化钽,钽-氮化硅,钛,氮化钛,钛-氮化硅,钛-氮化钛,钛-钨,钨,氮化钨和钨-氮化硅。
为满足对高密度集成电路日益增加的需求,半导体制造商如今制造的集成电路包含金属互连结构的多重层。在器件制造过程中,对每个互连层进行平坦化以便提高组装密度,加工一致性,产品质量且最重要的是能够制造多层集成电路。半导体制造商依靠化学机械平坦化(CMP)作为制造平坦基底表面的成本有效的方法。典型以两步工序进行该CMP处理。首先,该抛光处理使用特别设计的“第一步”浆料快速去除铜。例如,Carpio等人在“铜CMP浆料化学性质的初步研究”Thin Solid Films,262(1995)中公开了使用5wt%的硝酸溶液以有效去除铜。类似地,Kondo等人在美国专利第6,117,775号中公开了硝酸和BTA在铜去除中的应用。
最初的铜去除之后,“第二步”浆料去除阻挡层材料。典型地,第二步浆料需要有优异的选择性以便去除阻挡层材料而不会对互连结构的物理结构或电性能产生有害影响。
由于通常认为碱性抛光浆料具有比酸性浆料更高的钽和氮化钽去除速率,因此商品化的第二步浆料典型具有中性到碱性的pH。针对于中性至碱性pH阻挡层金属抛光浆料优点的另一个因素涉及需要在第二步抛光过程中保护覆盖在阻挡层金属上的金属。该金属的去除速率必需非常低以便减少金属互连的凹陷。
在包含氧化剂的酸性浆料中,铜趋向于不但具有高的去除速率而且具有高的静态腐蚀速率。然而Cote等人在美国专利第6,375,693号中公开了用于阻挡层材料的酸性CMP浆料。Cote等人的浆料通过氧化氢氧化剂,苯并三唑抑制剂和硫酸化脂肪酸在2至7.5范围的pH下工作。类似地,Wojtczak等人在美国专利第6,409,781号中公开了一种酸性抛光浆料,该浆料依靠碘酸钾氧化剂,亚氨基二乙酸作为铜的腐蚀抑制剂和硝酸作为铜的活化剂来选择性抛光阻挡层材料。遗憾的是,酸性抛光浆料可能具有稳定性问题,这时浆料会发生黄化或其它颜色改变。这种黄化发生在向酸性抛光浆料中加入过氧化氢之后。此外,由于抛光浆料典型具有数天的有效期,这种黄化现象会导致浆料随时间变深。而且这种颜色改变是可导致半导体晶片产量降低的抛光性能改变的指示。
未来的低k和超低k IC结构的集成要求在CMP步骤中具有低的金属和电介质损失。因此,极有可能采用选择性浆料用于阻挡层的去除。虽然中性到碱性的抛光浆料具有本领域技术人员所熟知的优点,例如上文所述的那些优点,但是这些浆料同时倾向于具有低的钽去除速率。另外,由于钽容易被氧化,浆料中的氧化剂会与钽反应在表面上形成氧化层。考虑到上面所述,存在提供第二步浆料的需求,该浆料具有高的阻挡层材料去除速率,优异的互连金属选择性和电介质材料的受控去除。另外,存在对具有足够时间稳定性的浆料的需求,从而可避免与酸性阻挡层浆料相联系的有害颜色改变。
发明内容
本发明提供了适用于在非铁互连金属的存在下优先去除阻挡层材料并且具有有限的电介质侵蚀的抛光溶液,该抛光溶液包含:0至20wt%的氧化剂,至少0.001wt%的抑制剂以便降低该非铁互连金属的去除速率,10ppb至4wt%的配位剂,0至50wt%的研磨剂和余量的水;而且该溶液具有小于7的pH。
另一方面,本发明提供了适用于在非铁互连金属的存在下优先去除阻挡层材料并且具有有限的电介质侵蚀的抛光溶液,该抛光溶液包含:0.01至15wt%的氧化剂,0.001至10wt%的抑制剂以便降低该非铁互连金属的去除速率,100ppb至2wt%的配位剂,0至10wt%的表面活性剂,0.1至40wt%的研磨剂和余量的水,而且该溶液具有小于或等于5的pH。
另一方面,本发明提供了抛光半导体基底的方法,该方法包括如下步骤:使用抛光溶液和抛光垫抛光半导体基底,该抛光溶液适合于在非铁互连金属的存在下优先去除阻挡层材料并且具有有限的电介质侵蚀,该抛光溶液包含:0至20wt%的氧化剂,至少0.001wt%的抑制剂以便降低该非铁互连金属的去除速率,10ppb至4wt%的配位剂,0至50wt%的研磨剂和余量的水;而且该溶液具有小于7的pH。
具体实施方式
据发现配位剂可以通过减少抛光浆料的黄化来改良酸性阻挡层去除溶液,而不会对晶片的均匀性或图案化的晶片中的阻挡层膜的选择性去除产生不利影响。这可以提高该酸性阻挡层浆料的有效期性能。对于本说明书,配位剂表示与金属离子结合、作为螯合剂的组分,或者与自由金属离子结合的组分,以降低抛光溶液中至少一种金属离子的自由金属离子浓度。对于本说明书,抛光溶液是指可以包含或者不包含研磨剂的水性抛光溶液。如果该抛光溶液包含研磨剂,这时该抛光溶液也是抛光浆料。该抛光溶液还可以选择性包含表面活性剂,pH缓冲剂,消泡剂和杀菌剂。
对于本说明书,电介质包括氧化硅基材料例如TEOS,低k和超低k材料(一些超低k材料不是氧化硅基材料)。为了抛光低k和超低k电介质材料,维持低的压力是重要的以便减少这些材料的分层和断裂。然而,低压力会导致低的阻挡层材料(Ta/TaN)去除速率,这不利于晶片的处理量。幸运的是,与低压力下工作的常规碱性阻挡层浆料相比,含有强氧化剂的酸性抛光溶液已显示出高的阻挡层去除速率。该阻挡层材料可以包括下列物质:钽,氮化钽,钽-氮化硅,钛,氮化钛,钛-氮化硅,钛-氮化钛,钛-钨,钨,氮化钨和钨-氮化硅。
该阻挡层金属抛光组合物可选择性包含研磨剂用于阻挡层材料的“机械”去除。该CMP组合物包含研磨剂用于阻挡层的“机械”去除。该研磨剂优选为胶态研磨剂,典型研磨剂包括如下:无机氧化物,金属硼化物,金属碳化物,金属氢氧化物,金属氮化物,或包含前述研磨剂其中至少一种的组合。合适的无机氧化物包括,例如氧化硅(SiO2),氧化铝(Al2O3),氧化锆(ZrO2),氧化铈(CeO2),氧化锰(MnO2),和它们的混合物。可以以多种形式获得氧化铝,例如α-氧化铝,γ-氧化铝,δ-氧化铝,和无定形(非晶态)氧化铝。其它适合的氧化铝实例是勃姆石(AlO(OH))颗粒和它们的混合物。如果需要,还可以利用这些无机氧化物的改性形式例如聚合物包覆无机氧化物颗粒。合适的金属碳化物,硼化物和氮化物包括,例如碳化硅,氮化硅,碳氮化硅(SiCN),碳化硼,碳化钨,碳化锆,硼化铝,碳化钽,碳化钛,和包含前述金属碳化物,硼化物和氮化物其中至少一种的混合物。如果需要还可以利用金刚石作为研磨剂。可选的研磨剂还包括聚合物颗粒和包覆的聚合物颗粒。优选的研磨剂是氧化硅。
该研磨剂在抛光组合物的水相中具有0到50wt%的浓度-本说明书以重量百分比表示所有的浓度,除非另外特别说明。对于不含研磨剂的溶液,使用固定研磨垫帮助阻挡层的去除。优选地,该研磨剂的浓度是0.1至40wt%。且最优选地,该研磨剂的浓度是0.25至35wt%。典型地,增加研磨剂的浓度可提高电介质材料的去除速率;而且特别会提高低k电介质材料例如碳掺杂氧化物的去除速率。例如,如果半导体制造商希望提高低k电介质的去除速率,这时增加研磨剂的含量可以将电介质的去除速率提高到期望的水平。
该研磨剂优选具有小于250nm的平均颗粒尺寸以便防止过度的金属凹陷和电介质侵蚀。对于本说明书,颗粒尺寸是指胶态氧化硅的平均颗粒尺寸。最优选地,该氧化硅具有小于100nm的平均颗粒尺寸以便进一步减小金属凹陷和电介质侵蚀。特别地,小于15nm的平均研磨剂颗粒尺寸能够以可接受的速率去除阻挡层金属而不会过度去除电介质材料。例如,具有2至15nm平均颗粒尺寸的胶态氧化硅可产生最小的电介质侵蚀和金属凹陷。减小胶态氧化硅的尺寸倾向于提高该溶液的选择性;但同时倾向于降低阻挡层的去除速率。另外,优选的胶态氧化硅可以包含添加剂,例如分散剂,以便在酸性pH范围提高氧化硅的稳定性。一种这样的研磨剂是法国Clariant S.A.,Puteaux提供的胶态氧化硅。
另外,高纯度的氧化硅颗粒还可以用来降低该抛光溶液的黄化速率。例如,维持总的过渡金属浓度小于百万分之一(ppm)可进一步提高该溶液降低黄化的能力。此外,限制钾和钠小于1ppm可减少这些有害元素向电介质层中的有害扩散。
可选地,优选通过使用氧化剂来优化阻挡层的去除速率,例如钽,氮化钽,钛和氮化钛。适合的氧化剂包括,例如过氧化氢,单过硫酸盐,碘酸盐,过邻苯二甲酸镁,过乙酸和其它过酸,过硫酸盐,溴酸盐,高碘酸盐,硝酸盐,铁盐,铈盐,Mn(III)盐,Mn(IV)盐和Mn(VI)盐,银盐,铜盐,铬盐,钴盐,卤素,次氯酸盐或包含前述氧化剂中至少一种的组合。优选的氧化剂是过氧化氢。应注意,典型地在使用之前将氧化剂加入抛光组合物,并且在这些情形中将氧化剂容纳于单独的包装中。
希望氧化剂的用量为0至20wt%。优选地,该氧化剂为0.001至15wt%。最优选地,该组合物包含0.05至15wt%的氧化剂。调整氧化剂例如过氧化物的量还可以控制金属互连的去除速率。例如,增加过氧化物的浓度可提高铜的去除速率。然而氧化剂的过度增加会对抛光速率产生不利影响。
另外,该溶液包含至少0.001wt%的抑制剂以便控制静态腐蚀或其它去除机制产生的非铁互连的去除速率。调节抑制剂的浓度可以通过保护金属不受静态腐蚀从而调节非铁互连金属的去除速率。优选地,该溶液包含0.001至10wt%的抑制剂以便抑制非铁金属例如铜互连的静态腐蚀。最优选地,该溶液包含0.05至2wt%的抑制剂。该抑制剂可以由抑制剂的混合物组成。唑类(azole)抑制剂对铜和银互连特别有效。典型的唑类抑制剂包括苯并三唑(BTA),巯基苯并噻唑(MBT),甲苯三唑和咪唑。对于铜和银互连BTA是特别有效的抑制剂。
该抛光组合物具有小于7的pH和余量的水。优选的,该pH小于或等于5。可选地,该抛光组合物包含无机pH调节剂以便将该抛光组合物的pH降低到小于7的酸性pH以及余量的水。优选地,该pH调节剂仅含有杂质水平浓度的金属离子。另外,该溶液最优选依靠余量的去离子水来限制附带的杂质。该pH调节剂可以是有机或无机酸。典型的有机酸包括下列酸中的至少一种:乙酸,柠檬酸,苹果酸,顺丁烯二酸,羟基乙酸,邻苯二甲酸,草酸,丙二酸,乳酸,丁二酸,酒石酸和它们的混合物。该pH调节剂优选是无机酸,例如硝酸,硫酸,盐酸,氢氟酸和磷酸。最有利的pH调节剂是硝酸(HNO3)。该溶液典型具有1.5至5的pH。最优选的pH是2至4。
在低于5的pH下,该抛光组合物可提供高的阻挡层金属去除速率,即使只具有相对低的研磨剂浓度。这种低的研磨剂浓度可以通过减少研磨剂引起的有害缺陷提高CMP工艺的抛光性能。另外,在低于4的pH,可以使用颗粒尺寸相对较小的研磨剂颗粒来配置该抛光组合物。例如小至约10nm的颗粒尺寸仍可提供可接受的Ta/TaN去除速率。通过使用颗粒尺寸相对较小的研磨剂并以低的研磨剂浓度配置该酸性抛光组合物,可以将抛光缺陷减少到极好的水平。
典型的配位剂包括羧酸,多元羧酸,氨基羧酸,多元胺化合物及它们的化合物。具体的配位剂包括如下:乙酸,丙氨酸,天冬氨酸,乙酰乙酸乙酯,乙二胺,亚丙基二胺,乙二胺四乙酸(EDTA),柠檬酸,乳酸,苹果酸,顺丁烯二酸,丙二酸,草酸,三亚乙基四胺,二亚乙基三胺,甘氨酸,羟基乙酸,戊二酸(gluteric acid),水杨酸,氨三乙酸,乙二胺,羟亚乙基乙二胺四乙酸,羟基喹啉,酒石酸,二乙基二硫代氨基甲酸钠,丁二酸,磺基水杨酸,三羟基乙酸(triglycolic acid),氢硫基乙酸,3-羟基丁酸,丙酸,邻苯二甲酸,间苯二甲酸,3-羟基水杨酸,3,5-二羟基水杨酸,棓酸,葡糖酸,邻苯二酚,连苯三酚,棓酸,丹宁酸,和它们的盐和它们的混合物。一些有机酸,例如柠檬酸不但可以充当配位剂而且可以充当pH调节剂。
十亿分之10(ppb)至4wt%数量的配位剂可控制该抛光组合物的变色。该抛光溶液优选包含100ppb至2wt%的配位剂。最优选地,该抛光溶液包含1ppm至1wt%的配位剂。不足的配位剂会导致不稳定的抛光浆料(过短时期内发生颜色改变的抛光浆料);而过量的配位剂会对抛光速率造成不利影响。
或者,附加的配位剂或水溶性聚合物可帮助进一步提高非铁互连金属的去除速率。例如,加入0.01至5wt%的水溶性聚合物可以将非铁互连金属的去除速率提高到可接受的水平。例如具有100至100,000的重均分子量的聚丙烯酸对于提高铜的去除速率特别有效。该聚丙烯酸优选具有200至10,000的重均分子量。
据发现铵盐的可选加入有利于在酸性pH水平下受控含氧化硅层如TEOS层的去除速率,从而容许控制该含氧化硅材料的去除速率。该铵盐是与化合物形成的有机铵盐以包含下列结构:
R1,R2,R3和R4可以是相同或者不同的基团。该组合物在酸性pH下起作用,这时该铵化合物发生离子化。典型的阴离子包括,硝酸根,硫酸根,卤化物(例如溴化物,氯化物,氟化物和碘化物),柠檬酸根,磷酸根,草酸根,苹果酸根,葡糖酸根,氢氧化物,乙酸根,硼酸根,乳酸根,硫氰酸根,氰酸根,磺酸根,硅酸根,过卤化物(例如过溴酸根,高氯酸根和高碘酸根),铬酸根,和它们的混合物。可以将该盐直接加入组合物或者原位形成该盐。例如,将氢氧四丁铵(TBAH)加入pH为2.5的硝酸溶液中可形成硝酸四丁铵。
优选的铵盐组合是氢氧四丁铵与氢氟酸反应形成的化合物。这种组合在低pH水平发生反应从而形成氟化四丁铵盐。虽然不清楚确切的机制(该氟化物盐在溶液中离解从而提供氟离子),但溶液中包含有机氟化铵盐可进一步提高TEOS的去除速率。
R1是具有2至15个碳原子的碳链长度的有机物。更优选地,R1具有2到10的碳链长度。最优选地,R1具有2到5个碳原子的碳链长度。该有机物R1可以是取代或非取代芳基,烷基,芳烷基,或烷芳基。
优选地,R2,R3和R4是有机化合物,例如取代或非取代芳基,烷基,芳烷基,或烷芳基;或氢。如果R2,R3或R4是有机化合物,这时该有机化合物优选具有2至15个碳原子的碳链长度;更优选地,该化合物具有2至10个碳原子的碳链长度;且最优选地该化合物具有2到5个碳原子的碳链长度。
适用于形成铵盐的化合物包括四乙铵,四丁铵,苄基三丁铵,苄基三甲铵,苄基三乙铵,二烯丙基二甲铵,甲基丙烯酸二乙基氨基乙酯,甲基丙烯酸二甲基氨基乙酯,甲基丙烯酰氧基乙基三甲铵,3-(甲基丙烯酰氨基)丙基三甲铵,三亚乙基四胺,四甲胍,己胺和它们混合物。具体的铵盐包括硝酸四乙铵,氟化四丁铵,硝酸四乙铵,氟化四乙铵,氯化苄基三丁铵,氯化苄基三甲铵,氯化苄基三乙铵,氯化二烯丙基二甲铵,氯化二烯丙基二乙胺,甲基丙烯酸二乙基氨基乙酯,甲基丙烯酸二甲基氨基乙酯,硫酸甲基丙烯酰氧基乙基三甲铵,氯化甲基丙烯酰氧基乙基三甲铵,氯化3-(甲基丙烯酰氨基)丙基三甲铵,三亚乙基四胺,四甲基胍,己胺和包含至少一种前述铵盐的混合物。优选的铵盐是四乙铵盐,四丁铵盐,苄基三丁铵盐,苄基三甲铵盐,苄基三乙铵盐和它们的混合物。
该铵盐的存在量是1ppm至4wt%。优选地,该铵盐的存在量是10ppm至2wt%。最优选地,该铵盐的存在量是25ppm至1wt%。
该溶液能够使CMP设备在低的垫压力下工作,例如7.5至25kPa,而且在一些情形中甚至低于7.5kPa。低的CMP垫压力可以通过减少划痕和其它不良抛光缺陷来提高抛光性能,并减少对脆性材料的损害。例如,如果受到高的压力,低介电常数材料会发生断裂和分层。此外,通过酸性抛光溶液得到的高阻挡层金属去除速率能够在使用低的研磨剂浓度和小的颗粒尺寸的情况下实现有效的阻挡层金属抛光。
对于本说明书,适用于在非铁互连金属的存在下优先去除阻挡层材料,这指的是能够以大于互连金属去除速率并且以每分钟埃数表示的速率去除阻挡层材料。典型地,该抛光溶液具有至少1.5比1的氮化钽相对铜的选择性,如使用垂直于晶片且小于15kPa的抛光垫压力所测。优选地,该抛光溶液具有至少2比1的氮化钽相对铜的选择性,如使用垂直于晶片且小于15kPa的抛光垫板压力所测。最优选地,该抛光溶液具有至少3比1的氮化钽相对铜的选择性。测试该选择性的具体实例是包括聚氨酯抛光垫的实施例3的情形。这种高水平的选择性允许芯片制造商去除阻挡层材料而不会除去过多的电介质或互连材料。
对于本说明书,有限的电介质侵蚀是指化学机械抛光工艺在抛光之后,电介质具有足够的厚度实现其预定的用途,例如作为半导电,掩模或阻挡层材料。另外,该抛光溶液可提供灵活的氮化钽相对电介质的选择性。例如,该抛光溶液具有1比2至高达10比1的氮化钽相对TEOS的选择性,如使用垂直于晶片且小于15kPa的抛光垫压力所测。测试该选择性的具体实例是包括聚氨酯抛光垫的实施例3的情形。
该抛光组合物还可以选择性包含缓冲剂例如多种有机和无机酸,和氨基酸或它们具有的pKa在1.5至小于3的pH范围内的盐。该抛光组合物可以进一步选择性包含消泡剂,例如非离子表面活性剂,其中包括酯,环氧乙烷,醇,乙氧基化物,硅化合物,氟化合物,醚,配糖体和它们的衍生物等。该消泡剂还可以是两性表面活性剂。该抛光组合物可以选择性包含杀菌剂,例如包含活性成分2-甲基-4-异噻唑啉-3-酮(one)和5-氯-2-甲基-4-异噻唑啉-3-酮的KathonICP III(Kathon是Rohm and Haas Company的注册商标)。
实施例
实施例1:
制备表1中所示的一系列溶液组合物以便评价两种抗黄化添加剂(EDTA和柠檬酸)在不同浓度水平的性能。在制备该组合物中,将表1中所示的所有必需化学制剂(除过氧化氢和研磨剂以外)按需要量加入容器中的去离子水中。搅拌容器中的溶液直到所有的成分溶于水。然后向容器中加入研磨剂。然后通过添加硝酸将溶液的pH调节到目标pH。随后,向容器中加入过氧化氢以便用作抛光组合物。
在室温并且无扰动的情况下进行该黄化测试。将具有不同量抗黄化添加剂的浆料装入塑料瓶。将这些瓶子保持在一个位置并避免扰动持续18天。以一定的时效间隔通过肉眼观察确定这些浆料的颜色并进行记录,结果如表2所示。对于本说明书,字母代表对照实施例而数字代表本发明的实施例。使用不含任何抗黄化配位添加剂的对照浆料A作为对照。
表1
浆料 | BTAwt% | TBAHwt% | EDTA,钠盐wt% | 柠檬酸wt% | 氧化硅wt% | H2O2wt% | pH |
A | 0.6 | 0.085 | 4 | 0.5 | 2.5 | ||
1 | 0.6 | 0.085 | 0.001 | 4 | 0.5 | 2.5 | |
2 | 0.6 | 0.085 | 0.002 | 4 | 0.5 | 2.5 | |
3 | 0.6 | 0.085 | 0.005 | 4 | 0.5 | 2.5 | |
4 | 0.6 | 0.085 | 0.01 | 4 | 0.5 | 2.5 | |
5 | 0.6 | 0.085 | 0.03 | 4 | 0.5 | 2.5 | |
6 | 0.6 | 0.085 | 0.05 | 4 | 0.5 | 2.5 | |
7 | 0.6 | 0.085 | 0.1 | 4 | 0.5 | 2.5 | |
8 | 0.6 | 0.085 | 0.3 | 4 | 0.5 | 2.5 | |
9 | 0.6 | 0.085 | 0.05 | 4 | 0.5 | 2.5 | |
10 | 0.6 | 0.085 | 0.1 | 4 | 0.5 | 2.5 | |
11 | 0.6 | 0.085 | 0.3 | 4 | 0.5 | 2.5 |
注:表1的氧化硅是购自Clariant且具有25nm的平均颗粒尺寸的PL150H25。
表2
浆料 | 第0天 | 第4天 | 第5天 | 第7天 | 第11天 | 第14天 | 第18天 |
A | 白色 | 黄色/浅褐色 | 黄色/浅褐色 | 褐色 | 褐色 | 褐色 | 褐色 |
1 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 |
2 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 |
3 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 |
4 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 |
5 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 |
6 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 |
7 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 |
8 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 | 白色 |
9 | 白色 | 黄色/浅褐色 | 黄色/浅褐色 | 黄色/浅褐色 | 黄色/浅褐色 | 黄色/浅褐色 | 黄色/浅褐色 |
10 | 白色 | 白色 | 白色 | 白色 | 黄色/浅褐色 | 黄色/浅褐色 | 黄色/浅褐色 |
11 | 白色 | 白色 | 白色 | 白色 | 黄色/浅褐色 | 黄色/浅褐色 | 黄色/浅褐色 |
根据该数据,显然两种添加剂都有利于消除或减缓黄化反应。EDTA特别有效。低达10ppm的EDTA浓度可维持该浆料不发生黄化达18天。
实施例2:
从实施例1中选出浆料A,2,3和10用于抛光测试以便确定添加剂的存在是否会影响晶片的去除速率。在测试浆料中,略微提高pH和H2O2的浓度。此外,用酸形式的EDTA取代EDTA的钠盐以便降低该浆料中总的碱离子浓度。与实施例1类似,浆料12,13具有与浆料2和3相同的有效EDTA摩尔浓度。
使用Applied Materials制造的Mirra型抛光工具进行抛光实验。抛光垫是Rohm and Haas Electronic Materials CMP Technologies提供的IC1010TM多孔聚氨酯垫。在每次运行之前,用Kinik生产的具有180μm金刚石的金刚石研磨板对垫进行调整。以10.33kPa(1.5psi)的膜压力,每分钟93转(rpm)的工作台转速和87rpm的托架转速进行该抛光处理。抛光组合物的供给速率是200ml/min并使用200mm的空白晶片(blanket wafer)。通过四点探针CDE Resmap测量Cu和TaN的去除速率。通过ThermaWave Optiprobe2600测量工具测定TEOS和Coral碳掺杂氧化物(CDO)膜的去除速率。
表3
浆料 | BTAwt% | TBAHwt% | EDTA,酸形式wt% | 柠檬酸wt% | 氧化硅wt% | H2O2wt% | pH | Cu/min | TaN/min | TEOS/min | CDO/min |
A | 0.6 | 0.085 | 4 | 0.6 | 2.6 | 28 | 1351 | 747 | 74 | ||
12 | 0.6 | 0.085 | 0.00154 | 4 | 0.6 | 2.6 | 60 | 1347 | 695 | 81 | |
13 | 0.6 | 0.085 | 0.0038 | 4 | 0.6 | 2.6 | 65 | 1443 | 670 | 75 | |
14 | 0.6 | 0.085 | 0.1 | 4 | 0.6 | 2.6 | 107 | 1470 | 756 | 84 |
注:表1的氧化硅是购自Clariant且具有25nm的平均颗粒尺寸的PL150H25。
抛光速率的数据(以每分钟埃数表示)如表3所示。统计上讲,该数据显示该抗黄化添加剂不会对膜去除速率产生显著的影响。
实施例3:
这个实施例检验抗黄化添加剂对晶片缺陷的影响。
在Applied Materials制造的Mirra型抛光工具上进行该实验。抛光垫是Rohm and Haas Electronic Materials CMP Technologies提供的IC1010TM多孔聚氨酯垫板。在每次操作之前使用Kinik制造的含有180μm金刚石的金刚石研磨板对垫进行调整。以10.33kPa(1.5psi)的压力,每分钟93转(rpm)的工作台转速和87rpm的托架转速进行该抛光处理。CMP组合物的供给速率(浆料流速)是200毫升/分钟(ml/min)。通过商购的浆料EPL2362(Eternal ChemicalCo.,Ltd生产),使用CUP4410垫(Rohm and Haas ElectronicMaterials CMP Technologies提供)和21.7kPa(3psi),93rpm工作台转速,87rpm托架转速和200ml/min浆料流速的工艺参数对用于缺陷测试的200mm铜薄板晶片进行预抛光1分钟。这个步骤是用来产生新的铜表面。然后通过表4中的浆料组成对预抛光过的铜薄板晶片进行抛光。抛光之后,通过Applied Materials制造的Orbot缺陷工具测量缺陷数。
表4中显示了归一化的缺陷(defectivity)数据。浆料A代表归一化的缺陷标准并用作对照。
表4
浆料 | 抗黄化添加剂% | 新鲜 | 有效期第14天 | 贮存期第14天 | 贮存期第30天 |
A | 无添加剂 | 1.000 | 1.000 | 1.000 | 1.000 |
12 | 0.00154%EDTA | 0.913 | 0.578 | 0.936 | 0.843 |
13 | 0.0038%EDTA | 0.676 | 0.878 | 0.745 | 0.936 |
14 | 0.1%柠檬酸 | 0.815 | 0.843 | 0.843 | 0.682 |
该数据显示包含抗黄化添加剂不会降低缺陷性能,而且会改善晶片的缺陷。随着浆料的有效期和贮存期的老化缺陷的变化很小,这表明这些含抗黄化添加剂的浆料是稳定的。
实施例4
这个实施例检验高纯胶态氧化硅颗粒对有效期浆料试样黄化的影响。该浆料的制备方法和黄化测试的程序与实施例1中所描述的方法和程序相同。对照浆料B(表5)中所用的购自Fuso Chemical Co.,Ltd的氧化硅研磨剂颗粒Fuso PL-3具有比购自Clariant的氧化硅颗粒PL150H25更高的纯度。该颗粒具有非常低的金属污染。特别地,Fuso的PL-3超高纯研磨剂的规格包括19.5wt%的氧化硅,34.6±4.4nm的一次颗粒尺寸,70±10nm的二次颗粒尺寸,至多300ppb的Na,至多200ppb的K,至多50ppb的Fe,至多200ppb的Al,至多200ppb的Ca,至多100ppb的Mg,至多100ppb的Ti,至多100ppb的Ni,至多100ppb的Cr和至多100ppb的Cu。
表5
浆料 | BTAwt% | TBAHwt% | 氧化硅Fuso PL-3wt% | 氧化硅PL150H25wt% | H2O2wt% | pH |
A | 0.6 | 0.085 | 4 | 0.5 | 2.5 | |
B | 0.6 | 0.085 | 4 | 0.5 | 2.5 |
表6显示了室温下7天的黄化测试。
表6
浆料 | 第0天 | 第4天 | 第5天 | 第7天 |
A | 白色 | 黄色/浅褐色 | 黄色/浅褐色 | 褐色 |
B | 白色 | 白色 | 白色 | 白色 |
显然高纯氧化硅的浆料可以进一步降低黄化反应。虽然并非必需,高纯研磨剂与配位剂的组合可以提供最佳的稳定性和抗变色性。从这些测试可以看出与研磨剂颗粒联系的痕量过渡金属离子可催化苯并三唑与H2O2之间的反应从而使浆料变色而且反应产物也会使抛光溶液变色。
总之,该组合可提供具有优异的稳定性和抗变色性能的低pH抛光溶液。这种提高的稳定性可以通过提供具有可随时间预知的抛光性能的抛光溶液促进晶片产量的提高。此外,该组合不但具有快速的阻挡层材料去除,优异的互连金属选择性,优异的晶片缺陷性而且具有受控的电介质材料去除速率。可选地,含有机物铵盐可提高TEOS的去除速率,研磨剂颗粒可提高低k电介质的去除速率而过氧化氢可控制铜的去除速率从而可提供适用于多种集成电路(scheme)的抛光溶液。
Claims (10)
1.用于在非铁互连金属的存在下优先去除阻挡层材料并且具有有限的电介质侵蚀的抛光溶液,该抛光溶液包含:0至20wt%的氧化剂,至少0.001wt%的抑制剂以便降低该非铁互连金属的去除速率,10ppb至4wt%的配位剂,0至50wt%的研磨剂和余量的水;而且该溶液具有小于7的pH。
2.权利要求1的抛光溶液,该抛光溶液包含1ppm至4wt%由下列结构形成的含有机物铵盐:
其中R1,R2,R3和R4是基团且R1具有2至15个碳原子的碳链长度。
3.权利要求2的抛光溶液,其中由包含下列化合物中至少一种的化合物形成该铵盐:四乙铵,四丁铵,苄基三丁铵,苄基三甲铵,苄基三乙铵,二烯丙基二甲铵,甲基丙烯酸二乙基氨基乙酯,甲基丙烯酸二甲基氨基乙酯,甲基丙烯酰氧基乙基三甲铵,3-(甲基丙烯酰氨基)丙基三甲铵,三亚乙基四胺,四甲胍,己胺和它们的混合物。
4.权利要求1的抛光溶液,其中该抛光溶液包含硝酸且该抛光溶液的pH水平是1.5至5。
5.用于在非铁互连金属的存在下优先去除阻挡层材料并且具有有限的电介质侵蚀的抛光溶液,该抛光溶液包含:0.01至15wt%的氧化剂,0.001至10wt%的抑制剂以便降低该非铁互连金属的去除速率,100ppb至2wt%的配位剂,0至10wt%的表面活性剂,0.1至40wt%的研磨剂和余量的水,而且该溶液具有小于或等于5的pH。
7.权利要求6的抛光溶液,其中由包含下列化合物中至少一种的化合物形成该铵盐:四乙铵,四丁铵,苄基三丁铵,苄基三甲铵,苄基三乙铵,二烯丙基二甲铵,甲基丙烯酸二乙基氨基乙酯,甲基丙烯酸二甲基氨基乙酯,甲基丙烯酰氧基乙基三甲铵,3-(甲基丙烯酰氨基)丙基三甲铵,三亚乙基四胺,四甲胍,己胺和它们的混合物。
8.权利要求5的抛光溶液,其中该溶液包含硝酸,该抛光溶液的pH水平是1.5至4而且该配位剂包含至少一种选自下列的化合物:乙酸,丙氨酸,天冬氨酸,乙酰乙酸乙酯,乙二胺,亚丙基二胺,乙二胺四乙酸(EDTA),柠檬酸,乳酸,苹果酸,顺丁烯二酸,丙二酸,草酸,三亚乙基四胺,二亚乙基三胺,甘氨酸,羟基乙酸,戊二酸,水杨酸,氨三乙酸,乙二胺,羟基亚乙基乙二胺四乙酸,羟基喹啉,酒石酸,二乙基二硫代氨基甲酸钠,丁二酸,磺基水杨酸,三羟基乙酸,氢硫基乙酸,3-羟基丁酸,丙酸,邻苯二甲酸,间苯二甲酸,3-羟基水杨酸,3,5-二羟基水杨酸,棓酸,葡糖酸,邻苯二酚,连苯三酚,棓酸,丹宁酸,它们的盐和它们的混合物。
9.权利要求1的抛光组合物,其中该配位剂选自乙二胺四乙酸(EDTA)和柠檬酸。
10.抛光半导体基底的方法,该方法包括如下步骤:使用抛光溶液和抛光垫抛光半导体基底,该抛光溶液适合于在非铁互连金属的存在下优先去除阻挡层材料并且具有有限的电介质侵蚀,该抛光溶液包含:0至20wt%的氧化剂,至少0.001wt%的抑制剂以便降低该非铁互连金属的去除速率,10ppb至4wt%的配位剂,0至50wt%的研磨剂和余量的水;而且该溶液具有小于7的pH。
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CN200510067350.0A Active CN1696235B (zh) | 2004-04-21 | 2005-04-20 | 阻挡层抛光溶液 |
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US (1) | US7253111B2 (zh) |
JP (1) | JP4761815B2 (zh) |
KR (1) | KR101200566B1 (zh) |
CN (1) | CN1696235B (zh) |
DE (1) | DE102005016554A1 (zh) |
FR (1) | FR2869456B1 (zh) |
TW (1) | TWI363789B (zh) |
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-
2004
- 2004-04-21 US US10/830,268 patent/US7253111B2/en not_active Expired - Lifetime
-
2005
- 2005-04-01 TW TW094110509A patent/TWI363789B/zh active
- 2005-04-11 DE DE102005016554A patent/DE102005016554A1/de not_active Ceased
- 2005-04-20 FR FR0551010A patent/FR2869456B1/fr active Active
- 2005-04-20 KR KR1020050032664A patent/KR101200566B1/ko active IP Right Grant
- 2005-04-20 CN CN200510067350.0A patent/CN1696235B/zh active Active
- 2005-04-21 JP JP2005123109A patent/JP4761815B2/ja active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101397482A (zh) * | 2007-09-28 | 2009-04-01 | 富士胶片株式会社 | 抛光液及使用该抛光液的抛光方法 |
CN101970589A (zh) * | 2007-11-30 | 2011-02-09 | 安集微电子(上海)有限公司 | 一种化学机械抛光液 |
CN110655867A (zh) * | 2018-06-28 | 2020-01-07 | 凯斯科技股份有限公司 | 抛光料浆组合物 |
US11279851B2 (en) | 2018-06-28 | 2022-03-22 | Kctech Co., Ltd. | Polishing slurry composition |
CN111378371A (zh) * | 2018-12-28 | 2020-07-07 | 安集微电子科技(上海)股份有限公司 | 一种焦性没食子酸在二氧化硅抛光中的用途 |
CN111378371B (zh) * | 2018-12-28 | 2022-05-13 | 安集微电子科技(上海)股份有限公司 | 一种焦性没食子酸在二氧化硅抛光中的用途 |
CN115101471A (zh) * | 2022-03-21 | 2022-09-23 | 康劲 | 一种用于多层铜互连cmp的工艺控制方法 |
Also Published As
Publication number | Publication date |
---|---|
FR2869456A1 (fr) | 2005-10-28 |
TW200535203A (en) | 2005-11-01 |
KR101200566B1 (ko) | 2012-11-13 |
DE102005016554A1 (de) | 2005-11-10 |
US20050236601A1 (en) | 2005-10-27 |
FR2869456B1 (fr) | 2006-11-10 |
TWI363789B (en) | 2012-05-11 |
KR20060047259A (ko) | 2006-05-18 |
CN1696235B (zh) | 2014-04-09 |
US7253111B2 (en) | 2007-08-07 |
JP4761815B2 (ja) | 2011-08-31 |
JP2005328043A (ja) | 2005-11-24 |
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