CN1688934A - 光掩膜及半导体器件的制造方法 - Google Patents
光掩膜及半导体器件的制造方法 Download PDFInfo
- Publication number
- CN1688934A CN1688934A CNA038237148A CN03823714A CN1688934A CN 1688934 A CN1688934 A CN 1688934A CN A038237148 A CNA038237148 A CN A038237148A CN 03823714 A CN03823714 A CN 03823714A CN 1688934 A CN1688934 A CN 1688934A
- Authority
- CN
- China
- Prior art keywords
- pattern
- photomask
- gate
- mask
- width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2003/002211 WO2004077155A1 (ja) | 2003-02-27 | 2003-02-27 | フォトマスク及び半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1688934A true CN1688934A (zh) | 2005-10-26 |
CN1688934B CN1688934B (zh) | 2010-05-26 |
Family
ID=32923091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN038237148A Expired - Fee Related CN1688934B (zh) | 2003-02-27 | 2003-02-27 | 半导体器件的制造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7790335B2 (zh) |
JP (1) | JP4641799B2 (zh) |
CN (1) | CN1688934B (zh) |
WO (1) | WO2004077155A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7794920B2 (en) | 2006-07-21 | 2010-09-14 | Hynix Semiconductor Inc. | Pattern decomposition method for double exposure |
CN102135728A (zh) * | 2011-02-23 | 2011-07-27 | 大连理工大学 | 基于一维软模板纳米压印制作三维纳米网格结构的方法 |
CN1983024B (zh) * | 2005-12-15 | 2012-01-25 | 瑞萨电子株式会社 | 使用利文森型掩模的图形形成方法及该掩模的制造方法 |
CN105629658A (zh) * | 2014-10-30 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | 掩模版和半导体器件的形成方法 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8304180B2 (en) | 2004-09-14 | 2012-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4598575B2 (ja) * | 2005-03-17 | 2010-12-15 | ルネサスエレクトロニクス株式会社 | パターン形成方法、半導体装置の製造方法、位相シフトマスク及び位相シフトマスクの設計方法 |
JP2007096099A (ja) * | 2005-09-29 | 2007-04-12 | Toshiba Corp | 半導体装置の製造方法 |
KR100649871B1 (ko) | 2005-12-14 | 2006-11-27 | 동부일렉트로닉스 주식회사 | 이중 노광을 이용한 패턴 형성 방법 |
JP5103901B2 (ja) | 2006-01-27 | 2012-12-19 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
JP2007264475A (ja) * | 2006-03-29 | 2007-10-11 | Fujitsu Ltd | フォトマスクの作製方法及び半導体装置の製造方法 |
JP2008004917A (ja) | 2006-05-24 | 2008-01-10 | Fujitsu Ltd | パターン形成方法及び半導体装置の製造方法 |
JP4542175B2 (ja) * | 2008-06-09 | 2010-09-08 | アドバンスド・マスク・インスペクション・テクノロジー株式会社 | アシストパターン識別装置及び試料検査装置 |
JP5335351B2 (ja) * | 2008-10-01 | 2013-11-06 | Hoya株式会社 | マスクブランク用基板セット、マスクブランクセット、フォトマスクセット、及び半導体デバイスの製造方法 |
CN104460244A (zh) * | 2013-12-30 | 2015-03-25 | 苏州矩阵光电有限公司 | 一种利用双重曝光技术辅助集成光学生产的工艺 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0572717A (ja) * | 1991-09-13 | 1993-03-26 | Hitachi Ltd | フオトマスクおよびそれを用いた露光方法 |
JPH05204131A (ja) * | 1992-01-29 | 1993-08-13 | Oki Electric Ind Co Ltd | ホトマスク及びこれを用いたパターン形成方法 |
JP3255476B2 (ja) * | 1993-02-09 | 2002-02-12 | 三菱電機株式会社 | 回路パターン |
US5424154A (en) * | 1993-12-10 | 1995-06-13 | Intel Corporation | Lithographic emhancement method and apparatus for randomly spaced structures |
KR960002536A (zh) * | 1994-06-29 | 1996-01-26 | ||
US5573890A (en) | 1994-07-18 | 1996-11-12 | Advanced Micro Devices, Inc. | Method of optical lithography using phase shift masking |
US5858580A (en) | 1997-09-17 | 1999-01-12 | Numerical Technologies, Inc. | Phase shifting circuit manufacture method and apparatus |
JPH10326006A (ja) * | 1997-05-26 | 1998-12-08 | Sony Corp | パターンの形成方法 |
JPH117120A (ja) * | 1997-06-18 | 1999-01-12 | Sony Corp | マスクパターン作成方法およびマスクパターン作成装置並びにマスク作成装置 |
JP3119202B2 (ja) * | 1997-06-23 | 2000-12-18 | 日本電気株式会社 | マスクパターン自動発生方法およびマスク |
JPH11214280A (ja) * | 1998-01-20 | 1999-08-06 | Nec Corp | パターン形成方法 |
JP2000112114A (ja) * | 1998-10-08 | 2000-04-21 | Hitachi Ltd | 半導体装置及び半導体装置の製造方法 |
JP2001044092A (ja) * | 1999-07-26 | 2001-02-16 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2001042545A (ja) * | 1999-07-30 | 2001-02-16 | Hitachi Ltd | 半導体装置の製造方法 |
JP2001100390A (ja) * | 1999-09-27 | 2001-04-13 | Toshiba Microelectronics Corp | 露光用マスクのパターン補正方法 |
JP3633506B2 (ja) * | 2001-05-24 | 2005-03-30 | ソニー株式会社 | 露光方法および半導体装置の製造方法 |
-
2003
- 2003-02-27 WO PCT/JP2003/002211 patent/WO2004077155A1/ja active Application Filing
- 2003-02-27 JP JP2004568745A patent/JP4641799B2/ja not_active Expired - Fee Related
- 2003-02-27 CN CN038237148A patent/CN1688934B/zh not_active Expired - Fee Related
-
2005
- 2005-03-21 US US11/084,017 patent/US7790335B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1983024B (zh) * | 2005-12-15 | 2012-01-25 | 瑞萨电子株式会社 | 使用利文森型掩模的图形形成方法及该掩模的制造方法 |
US7794920B2 (en) | 2006-07-21 | 2010-09-14 | Hynix Semiconductor Inc. | Pattern decomposition method for double exposure |
CN102135728A (zh) * | 2011-02-23 | 2011-07-27 | 大连理工大学 | 基于一维软模板纳米压印制作三维纳米网格结构的方法 |
CN102135728B (zh) * | 2011-02-23 | 2012-07-25 | 大连理工大学 | 基于一维软模板纳米压印制作三维纳米网格结构的方法 |
CN105629658A (zh) * | 2014-10-30 | 2016-06-01 | 中芯国际集成电路制造(上海)有限公司 | 掩模版和半导体器件的形成方法 |
CN105629658B (zh) * | 2014-10-30 | 2020-02-07 | 中芯国际集成电路制造(上海)有限公司 | 掩模版和半导体器件的形成方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2004077155A1 (ja) | 2004-09-10 |
US20050164129A1 (en) | 2005-07-28 |
JPWO2004077155A1 (ja) | 2006-06-08 |
JP4641799B2 (ja) | 2011-03-02 |
CN1688934B (zh) | 2010-05-26 |
US7790335B2 (en) | 2010-09-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: FUJITSU MICROELECTRONICS CO., LTD. Free format text: FORMER OWNER: FUJITSU LIMITED Effective date: 20081107 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20081107 Address after: Tokyo, Japan Applicant after: FUJITSU MICROELECTRONICS Ltd. Address before: Kanagawa County, Japan Applicant before: Fujitsu Ltd. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee |
Owner name: FUJITSU SEMICONDUCTOR CO., LTD. Free format text: FORMER NAME: FUJITSU MICROELECTRON CO., LTD. |
|
CP01 | Change in the name or title of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: Fujitsu Microelectronics Ltd. |
|
CP02 | Change in the address of a patent holder |
Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100526 Termination date: 20200227 |
|
CF01 | Termination of patent right due to non-payment of annual fee |