CN1684249A - 半导体装置和半导体装置的制造方法 - Google Patents
半导体装置和半导体装置的制造方法 Download PDFInfo
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- CN1684249A CN1684249A CNA2005100648778A CN200510064877A CN1684249A CN 1684249 A CN1684249 A CN 1684249A CN A2005100648778 A CNA2005100648778 A CN A2005100648778A CN 200510064877 A CN200510064877 A CN 200510064877A CN 1684249 A CN1684249 A CN 1684249A
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Abstract
如图(a)所示,在绝缘带(1)上设置布线图形(2),将其一部分作为用于连接的连接部(4)。如图(b)所示,配置绝缘性树脂(7)以便覆盖连接部(4)。在图(c)中,进行定位在D1方向上加压使得半导体元件(3)的突起电极(6)推开绝缘性树脂(7)并连接于连接部(4)上。如图(d)所示,以在D1方向上加压了的状态下进行加热,使得连接部(4)伸入突起电极(6),使半导体元件(3)和绝缘带(1)的布线图形(2)被连接。由此,可以提供一种提高了带与半导体元件的连接强度的COF半导体装置。
Description
技术领域
本发明涉及半导体装置和半导体装置的制造方法,更详细地说,涉及被称作COF(Chip On Film:将IC封装于柔性线路板上)的、在柔性布线基板上接合并搭载了半导体元件的半导体装置和半导体装置的制造方法。
背景技术
在现有技术中,作为在柔性布线基板上接合并搭载了半导体元件的半导体装置的一个例子,公知有TCP(Tape Carrier Package:薄膜封装)。在TCP中,在绝缘带(insulating tape)中搭载了半导体元件的部分,预先设有贯通了的开口部,在布线图形突出成悬臂状的状态下,布线图形的前端部分与半导体元件接合。
近年来,作为在柔性布线基板上接合并搭载了半导体元件的半导体装置的另一例子,使用有COF(Chip On Film)(以下简称为COF)。在COF中,没有了用于搭载半导体元件的搭载用开口部,半导体元件接合并搭载在薄膜绝缘带的表面上。
在COF中,根据其使用目的,使用例如可自由弯曲的薄膜绝缘带来作为柔性布线基板。将配置于薄膜绝缘带的表面上的布线图形的各布线与半导体元件的对应端子电连接。此外,将薄膜绝缘带的外部连接用连接部连接于液晶面板或印刷基板等上。上述之外的布线图形露出部涂敷了阻焊剂,确保了绝缘状态。
现在,考虑对应于多管脚化,就使用了COF。由于还需要对应于小型化和薄型化的要求,所以在COF的薄膜绝缘带中,就需要使与半导体元件的连接部以及布线图形的外部连接用连接器部细距化,此外还需要使薄膜绝缘带、布线图形薄膜化。这里,为了使内部引线的间距变小,就需要使内部引线的宽度变小,使厚度变薄。
这里,根据图11(a)~(e)来说明COF31的制造方法的一例(现有例1)。在该制造方法中,使用了利用热压接的接合(日本国公开专利公报特开2001-176918号公报(公开日:2001年6月29日);以下作为专利文献1被参考)。
图11(a)所示的薄膜绝缘带21一侧的布线图形22是在基底的镀镍层上设置镀金层的结构。在布线图形22中设有接合部24,在使该接合部24露出的状态下涂敷保护层25。如图1(b)所示,将半导体元件23的突起电极26相对于布线图形22的接合部24进行定位,突起电极26是金凸块。
如图11(c)所示,将半导体元件23和薄膜绝缘带21的布线图形22在400~450℃的高温下且在向方向D6的0.1~0.3N/凸块的压力下,进行热压接。由此,就接合成使突起电极26伸入布线图形22中。被接合的地方32成为扩散层或合金层。
其后,如图11(d)所示,在半导体元件23与薄膜绝缘带21的间隙中从喷嘴30使未充满树脂27沿箭头D7方向流动并进行注入。如图11(e)所示,按箭头D8进行加热使未充满树脂27热固化,固接半导体元件23和薄膜绝缘带21。
但是,这样的热压接的接合方法中存在几个问题。
其中之一是在接合过程中使用大于等于400℃的高温。因此,连接部的布线图形就由于热膨胀、热收缩和吸排湿而产生了较大的伸缩。因此,由于连接部布线图形的累积尺寸偏差而容易产生连接不良。
此外,还有使用了较高荷重的问题。因此,连接部的布线图形在半导体元件的突起电极的外侧容易向半导体元件发生变形。因此,容易产生与半导体元件的接触(边缘接触)导致的不良。
这些问题在进行如上所述使用COF的目的之一的、连接部的细距化、布线图形的薄膜化时,变得更为显著。
这里,作为COF的制造方法的另一例子,有现有技术中已知的被称为MBB(Micro Bump Bonding:微凸块键合)、近年来受瞩目的NCP(Non Conductive Paste:非导电性胶)、ACP(Anisotropic ConductivePaste:各向异性导电性胶)的连接、密封方法(以下称作NCP等)。
这些NCP等是在低温下的接合方法,是在半导体元件与绝缘带(柔性布线基板)的布线图形之间介有绝缘性树脂、连接半导体元件的突起电极和柔性布线基板的布线图形并进行树脂密封的接合方法。这些是对用于适应于多管脚化的细距化、薄膜化还有由此产生的边缘接触而有效的技术,倍受瞩目。
在例如日本国公开专利公报特开昭60-262430号公报(公开日:1985年12月25日;以下称为专利文献2)和日本国公开专利公报特开昭63-151033号公报(公开日:1988年6月23日;专利文献3)等中公开了采用MBB的制造方法。
对于专利文献2中记载的制造方法(现有例2),基于图12、图13进行说明。这里,图12的平面图中的C-C’线剖面的剖面图是图13。另外,以下对具有与上述现有例1相同功能的部件附加相同符号来进行参照。
在现有例2中,首先如图13(a)(b)所示,在布线基板(绝缘带)21的布线图形22上,涂敷形成光固化性或热固化性的树脂27。
接着,如图13(c)所示,对突起电极26和布线图形22的连接部24进行定位并在箭头D9方向上进行加压。由此,推开突起电极26与布线图形22之间的树脂27,使树脂27沿箭头D10方向流动,仅通过突起电极26与布线图形22的连接部24的压接就可获得电连接。此外,与此同时,使树脂27溢出至半导体元件23的周缘。
其后,如图13(d)所示,在该状态下对树脂27沿箭头D11所示进行光照射或加热,通过光或热使其固化,从而固定半导体元件23和布线基版21。当进行热固化时,加热在小于等于150℃的温度下进行。
接着,对于专利文献3所述的制造方法(现有例3),基于图12、图14进行说明。这种情况下,图12的平面图中的C-C’线剖面中的剖面图相当于图14。
在现有例3中,首先如图14(a)(b)所示,在布线基版21的布线图形22上涂敷形成热固化性的树脂7。
接着,如图14(c)所示,对突起电极26和布线图形7的连接部24进行定位,并且使其相互接触,使用脉冲式加热工具将半导体元件23加压到布线基板21上。
而且,如图14(d)所示,在从接合部的周围除去了布线图形22上的树脂27之后,在将半导体元件23沿D12方向加压到布线基板21上的状态下,对脉冲式加热工具通电。由此,在100~250℃的温度下对半导体元件23进行加热,使树脂27固化。由此,将半导体元件23固接到布线基板21,并且电连接突起电极26和布线图形22。
但是,上述NCP等的结构存在可能不能获得充分的连接强度的问题。
即,NCP等由于仅通过加压导致的接触和树脂的固化收缩来连接了半导体元件的突起电极和薄膜绝缘带的布线图形,所以有连接强度(连接可靠性)较低的问题。
因此,在安装后,当被置于例如低温和高温反复的使用环境中时,在薄膜绝缘带与绝缘性树脂的界面或者绝缘性树脂与半导体元件的界面就有可能产生剥离现象。这是因为在反复由温度循环导致的热膨胀、收缩的情况下,根据所使用的材料的热膨胀系数的不同产生了应力。此外,当在安装后暴露在高湿的环境中反复吸湿、膨胀时,就同样可能会产生剥离现象。这种情况下,薄膜绝缘带的布线图形与半导体元件的突起电极的电连接状态恶化。
如果这样地使连接状态恶化,则成品率下降,结果使制造成本变高。
发明内容
本发明鉴于上述问题而作成,其目的在于提供一种可以提高半导体元件的突起电极与薄膜绝缘带的布线图形的连接可靠性以及成品率的半导体装置和半导体装置的制造方法。
本发明的半导体装置为了达成上述目的,具备:绝缘带,配置了多个布线图形;以及半导体元件,包括经由上述布线图形电连接于上述绝缘带上的突起电极,其特征在于,在上述绝缘带的布线图形中的、与上述半导体元件的突起电极对置的区域中,设置用于连接成使上述半导体元件的突起电极变形的同时伸入上述突起电极的连接部,并且在上述半导体元件与上述绝缘带之间配置了绝缘性树脂,上述绝缘带的布线图形中的上述连接部以推开上述绝缘性树脂并伸入上述半导体元件的突起电极的方式与上述突起电极连接。
在上述结构的半导体装置中,在绝缘带中配置了布线图形,在布线图形中连接了半导体元件的突起电极。绝缘带是薄膜的绝缘带。在绝缘带中设有例如外部连接端子,在该外部连接端子上连接了布线图形。通过对绝缘带的外部连接端子进行访问,可以经由布线图形对半导体元件进行访问。
在绝缘带的布线图形中,设置了用于使半导体元件的突起电极发生变形、伸入突起电极同时进行连接的连接部。而且,在半导体元件与绝缘带之间配置绝缘性树脂。例如,涂敷绝缘性树脂以便覆盖绝缘带的连接部。
在该状态下,施加压力来连接半导体元件和绝缘带。例如相对于绝缘带的连接部来对半导体元件的突起电极进行定位,对半导体元件施加压力。由此,连接部压出位于与突起电极之间的绝缘性树脂,进而使突起电极发生变形的同时伸入突起电极,从而与突起电极连接。
根据上述结构,布线图形与突起电极的连接不单是由加压导致的接触,而且由于伴随突起电极的变形故连接形状变复杂,使连接面积增大,可以使连接变得坚固。
此外,当使布线图形和突起电极连接时,由于在半导体元件与绝缘带之间介有绝缘性树脂,所以就可以防止半导体元件和绝缘带在突起电极和连接部对置的区域之外的不希望的位置相接触。因此,可以防止有边缘接触导致的不良。
此外,由于无需在接合时保持大于等于400℃的高温,所以不会使连接部的布线图形产生多余的伸缩。因此,不会产生布线图形的累积尺寸偏移,并不会产生由此导致的连接不良。
因此,通过上述结构,就可以同时解决上述热压接的接合方法和NCP等低温的接合方法中的问题。
本发明的半导体装置的制造方法为了达成上述目的,该半导体装置具备:绝缘带,配置了多个布线图形;以及半导体元件,包括经由上述布线图形与上述绝缘带电连接的突起电极,该制造方法其特征在于,包括:准备步骤,在上述绝缘带的布线图形中的、与上述半导体元件的突起电极对置的区域中,设置用于连接成使上述半导体元件的突起电极变形的同时伸入上述突起电极的连接部,并且在上述半导体元件与上述绝缘带之间配置了绝缘性树脂;以及连接步骤,使上述绝缘带的布线图形中的上述连接部以推开上述绝缘性树脂并伸入上述半导体元件的突起电极的方式与上述突起电极连接。
根据该制造方法,可以制造上述半导体装置,可以得到与上述同样的效果。使用该半导体装置的制造方法可以制造COF半导体装置。此外,使用该COF半导体装置可以制造半导体模块装置。
本发明的其他目的、特征和优秀之处,通过以下所示的记载就可以充分清楚了。此外,本发明的优点利用参照了附图的如下说明就可以明白了。
附图说明
图1是表示本发明一实施方式的半导体装置的绝缘带的平面图。
图2(a)是图1所示的平面图的A-A’线剖面图。
图2(b)是表示与图2(a)不同的状态的上述半导体装置的剖面图。
图2(c)是表示与图2(a)进一步不同的状态的剖面图。
图2(d)是表示与图2(a)进一步不同的状态的上述半导体装置的剖面图。
图3是放大表示了图1的一部分的平面图。
图4(a)是表示图2所示的半导体装置的一变形例的剖面图。
图4(b)是表示与图4(a)不同的状态的上述半导体装置的剖面图。
图4(c)是表示与图4(a)进一步不同的状态的上述半导体装置的剖面图。
图4(d)是表示与图4(a)进一步不同的状态的上述半导体装置的剖面图。
图4(e)是表示与图4(a)进一步不同的状态的上述半导体装置的剖面图。
图5是表示上述半导体装置的另一变形例的绝缘带的平面图。
图6(a)是图5所示的平面图的A-A’线剖面图。
图6(b)是表示与图6(a)不同的状态的上述半导体装置的剖面图。
图6(c)是表示与图6(a)进一步不同的状态的剖面图。
图6(d)是表示与图6(a)进一步不同的状态的剖面图。
图7是上述半导体装置的图6(d)所示的B-B’线剖面图。
图8是放大表示了图5的一部分的平面图。
图9是与图7不同的半导体装置的变形例的剖面图。
图10(a)是表示图6所示的半导体装置的一变形例的剖面图。
图10(b)是表示与图10(a)不同的状态的上述半导体装置的剖面图。
图10(c)是表示与图10(a)进一步不同的状态的剖面图。
图10(d)是表示进一步不同的状态的剖面图。
图11(a)是表示现有半导体装置的一例的剖面图。
图11(b)是表示与图11(a)不同的状态的上述半导体装置的剖面图。
图11(c)是表示与图11(a)进一步不同的状态的剖面图。
图11(d)是表示与图11(a)进一步不同的状态的剖面图。
图11(e)是表示与图11(a)进一步不同的状态的剖面图。
图12是表示现有半导体装置的一例的绝缘带的平面图。
图13(a)是表示现有半导体装置的另一例的剖面图。
图13(b)是表示与图13(a)不同的状态的上述半导体装置的剖面图。
图13(c)是表示与图13(a)进一步不同的状态的剖面图。
图13(d)是表示与图13(a)进一步不同的状态的剖面图。
图14(a)是表示现有半导体装置的又一例的剖面图。
图14(b)是表示与图14(a)不同的状态的上述半导体装置的剖面图。
图14(c)是表示与图14(a)进一步不同的状态的剖面图。
图14(d)是表示与图14(a)进一步不同的状态的剖面图。
具体实施方式
下面,基于附图说明本发明的一实施方式。
对于本发明的实施方式,基于附图的说明如下所述。
本实施方式的COF(Chip On Film,半导体装置)10例如图2(d)所示,在作为膜的绝缘带1上具备半导体元件3,是相互接合的结构。
更详细地说,COF10的绝缘带1如图2(a)~(d)所示,是在作为基板的绝缘带1上设置布线图形2的结构。
本实施方式的绝缘带1是聚酰亚胺类绝缘带。该绝缘带1柔软性高,可自由弯曲。绝缘带1是具有例如15、20、25、38、40μm等中的某一厚度的薄膜。将该绝缘带1用作基体材料的带载体,在带表面设置布线图形2。另外,在绝缘带1中不设用于搭载半导体元件3的开口部。
该布线图形2是例如铜箔图形。在铜箔图形的表面实施未图示的镀锡或镀金。布线图形2根据绝缘带1的厚度和布线图形的间距,具有例如5、8、9、12、18μm等中的某一厚度。
而且,如图2(a)所示,将布线图形2中、在搭载半导体元件3时与突起电极6对置的连接于突起电极6上的区域用作连接部4。
此外,在布线图形2中,在连接部4的外侧涂敷阻焊层。另外,更详细地说,该阻焊层5被涂敷成不仅是避开了用于与半导体元件的连接的连接部4而且在绝缘带1上的布线图形2之中也避开了未图示的外部连接用连接器部。在该外部连接用连接器部处连接了未图示的液晶面板和印刷基板等。由此,就避开了半导体元件3与布线图形2的不需要的接触及其他接触,确保了所希望的绝缘状态。
如图2(b)所示,涂敷绝缘性树脂7,以便覆盖布线图形2的连接部4。
如图2(c)所示,在布线图形2的连接部4中,使半导体元件3的突起电极(凸块)6对置,使用未图示的脉冲式加热工具,在D1方向上进行加压。这里,所谓脉冲式加热工具是指例如常温下以施加荷重的状态进行加热,在加热结束后降低荷重。箭头D1表示在加压的状态下进行加热。
另外,在本实施方式中,进行大体目标上大于等于250×10-4gf/um2的高荷重下的加压。该加压中荷重的值根据布线图形2的宽度、突起电极6的硬度、绝缘性树脂7的粘度或固化特性等而改变成最合适的值。因此,这里所特定的数值是大体目标上的程度。
如图2(d)所示,在加压的状态下加热到230~250℃的程度,将半导体元件3接合并搭载在绝缘性带1的表面上。由此,半导体元件3的突起电极6与配置于绝缘带1的表面上的布线图形2所对应的连接部4电连接。而且,利用绝缘性树脂7的热固化,密封了半导体元件3。其后,在使脉冲式加热工具的温度下降到常温附近后,解除加压。
另外,即使使用持久式加热工具代替脉冲式加热工具也没有问题。持久式加热工具是在利用加热到一定温度的工具加热的同时施加荷重并在加热的状态下降低荷重的制造方法。持久式加热工具在生产性上比较优秀。
这里,图2(a)~(d)是图1所示的A-A’线剖面,但是其中如图2(d)所示,在本实施方式中,对置配置并接合的突起电极6与布线图形2之中,主要是突起电极6一侧发生了变形。突起电极6被压坏,成为布线图形2伸入突起电极6的状态。另外,这时,位于突起电极6与布线图形2之间的绝缘性树脂7被压出并被除去,以使其不残留于突起电极7与布线图形2之间。绝缘性树脂7被从半导体元件3的下方压出,在半导体元件3侧面形成了凹面。
如上所述,本实施方式的COF10是下述的结构:在绝缘带1与半导体元件3之间配置绝缘性树脂7,设在绝缘带1的布线图形2上的连接部4以推开绝缘性树脂7并伸入半导体元件3的突起电极6的方式与突起电极6连接。
因此,连接成使突起电极6变形,可以使布线图形2与突起电极6的连接变得坚固。此外,由于在绝缘带1与半导体元件3之间介有绝缘性树脂7,所以可以防止绝缘带1的布线图形2与半导体元件3在不希望的位置的接触。此外,由于在230~250℃程度的加热就足够了,无需成为大于等于400℃的高温,所以就减少了布线图形2的伸缩,难于产生累积尺寸偏差。
通过以上的结构,就可以同时解决上述现有技术中的、热压接的接合方法和NCP等低温的接合方法的问题。另外,在上述的专利文献2、专利文献3这样的现有技术中,没有特别表示布线图形的宽度、布线图形对突起电极的伸入等。
这里,在图1表示了COF10的绝缘带1的平面图。如图1所示,在绝缘带1中的、搭载了未图示的半导体元件3的区域(搭载区域)8a中,没有涂敷阻焊层5。与未图示的半导体元件3的突起电极6对置的区域(对置区域)8b中包含的、绝缘带1的布线图形2的部分是连接部4。该连接部4是宽度从其中途部分开始变化的形状。更详细地说,布线图形2的连接部4的形状是与在半导体元件3的外周侧相比在中心侧其宽度更细。
根据该结构,在如图2(d)所示地布线图形2伸入突起电极6的情况中,与例如布线图形2的宽度一定的情况相比较,由于布线图形2伸入突起电极6的形状较为复杂,所以可以使连接进一步坚固。
此外,在绝缘带1中,由于从搭载了半导体元件3的区域的外周侧向中心侧配置了布线图形2,所以成为相对于突起电极6连接部4向半导体元件3的中心侧进行定位的形状。
更详细地说,如图3所示,在绝缘带1上,布线图形2的宽度变细的区域的长度X相对于半导体元件3的突起电极6的区域的长度Y,优选满足Y/3≤X≤2Y/3程度。这样一来,在接合突起电极6和布线图形2的连接部4时,即使产生了位置偏差的情况下,也可以容易地将布线图形2的细宽度部连结于半导体元件3的突起电极6上。例如,当长度X比长度Y的1/3左右小时,上述效果变小。此外,当长度X比长度Y的2/3左右大时,布线图形2的宽度较宽的部分伸入的面积变小,连接强度减少了。
此外,本实施方式的COF10使用230~250℃左右的低温的接合技术来进行制造。由此,在接合时,可以使包含连接部4的布线图形2的伸缩变小。因此,可以减少布线图形2的累积尺寸偏差引起的连接不良的产生。
此外,在产生了伸缩的情况等中,即使布线图形2产生了变形,由于在布线图形2与半导体元件3之间介有绝缘性树脂7,所以可以很大程度上减少布线图形2与半导体元件3的接触的可能性。因此,可以防止边缘接触(接触不良)。
这里,上述的现有NCP等的COF仅通过加压的接触和树脂的固化收缩来进行连接。因此,半导体元件的突起电极与绝缘带的布线图形的连接可靠性不太好。
另外,根据本实施方式的COF的结构,由于可以确保比较坚固的连接,所以与现有的NCP等相比,可以与现有TCP等效地提高半导体元件3的突起电极6与绝缘带1的布线图形2的连接可靠性以及成品率。
另外,对布线图形2的伸缩量带来影响的主要原因不只是温度,而且布线图形的宽度、布线图形间距、布线图形间的间隔、绝缘带的材质、厚度、吸湿量、预备加热的有元、包括预备加热的加热时间等影响因素也非常多。因此,使用数值来比较现有结构和本实施方式的结构较困难。
[变形例1]
对上述实施方式的变形例进行说明。在上述实施方式中,虽然对在加压后进行加热(低温)并固化的制造顺序的COF进行了说明,但是本申请并不限于此。如下所述,也可以是,COF在通过加热膨胀后进行加压使其固化的顺序下进行制造。另外,本变形例的COF,其制造顺序之外的结构与上述实施方式相同。例如,本变形例的COF具有如图1所示的结构。因此,在下面对具有相同功能的部件、单元付与相同的符号来进行参照,省略其说明。
首先,如与图2(a)相同的图4(a)、与图2(b)相同的图4(b)所示,在绝缘带1上配置布线图形2,设置连接部4,涂敷阻焊剂5,涂敷绝缘性树脂7。
其次,在本变形例中,如图4(c)所示,在箭头D2这样的加热方向上进行加热的状态,使半导体元件3的突起电极6与布线图形2的连接部4对置并进行定位。在该状态下,绝缘带1、布线图形2如用箭头D3所示进行热膨胀,突起电极6和布线图形2在其膨胀了的位置上进行定位。
接着,如图4(d)所示,对半导体元件3以在箭头D1方向上进行加压的状态下进行加热。由此,突起电极6和布线图形2在绝缘带1热膨胀了的位置上连接。
此外,通过加热的进行,绝缘性树脂7被加热固化。
其后,如图4(e)所示,在常温下进行冷却。由此,绝缘带1的热收缩和绝缘性树脂7的固化收缩在箭头D4、箭头D5的方向上分别产生。布线图形2是如图1所示的连接部4的结构,该连接部4被连接成伸入对置的突起电极6。因此,在本变形例的COF10a中,通过在如图4(e)所示的箭头D4、箭头D5的方向上产生了力,半导体元件3的突起电极6和绝缘带1的布线图形2在连接部4中被进一步坚固的固定(连接)。即,连接部4的形状成为钩连的形状,可以提高连接强度。因此,可以进一步提高连接可靠性、成品率。
[变形例2]
对其他变形例进行说明。在上述实施方式中,布线图形2的形状是在与半导体元件3的突起电极6对置的部分中途宽度变化的形状。更详细地说,是布线图形2的宽度与在半导体元件的外周侧相比在中心侧变细的形状。
但是,并不限定于此。如本变形例所示,布线图形可以是仅设置到与半导体元件3的突起电极6对置的区域的中途的结构。即,如图5所示,可以是将布线图形2的前端部配置对置区域8b的结构。在下面对具有相同功能的部件、单元付与相同的符号来进行参照,省略其说明。
本变形例的COF10b的绝缘带1如图5所示,是使绝缘带1上的布线图形2a中相对的前端间的距离比对应的半导体元件3的突起电极6间的距离长的结构。
对于该COF10b制造的顺序,基于图6(a)~(d)进行说明。
首先,如与图2(a)相同的图6(a)、与图2(b)相同的图6(b)所示,在绝缘带1上配置上述结构的布线图形2a,设置连接部4a,涂敷阻焊剂5,涂敷绝缘性树脂7。
而且,如图6(c)所示,在布线图形2a的连接部4a中,使半导体元件3的突起电极(凸块)6对置,使用未图示的脉冲式加热工具在箭头D1方向上进行加压。
如图6(d)所示,在加压的状态下加热至230~250℃左右的温度,将半导体元件3接合并搭载于绝缘性带1的表面上。由此,半导体元件3的突起电极6与绝缘带1的表面上配置的布线图形2a的对应连接部4a电连接。而且,利用绝缘性树脂7的热固化就密封了半导体元件3。其后,使脉冲式加热工具的温度降低到常温附近后,解除加压。
如图7所示,在图6(d)所示的B-B’线剖面中,成为布线图形2a的连接部4a伸入突起电极6的结构。
如上所述,在本变形例的COF10b中,如图5所示,是绝缘带1上的布线图形2a的连接部4a仅设置到与半导体元件3的突起电极6对置的区域中途的形状。只要是该形状,当布线图形2a的连接部4a伸入突起电极6时,布线图形2a的连接部4a与突起电极6的接触面积就可以确保规定的面积。因此,可以使布线图形2a的连接部4a与突起电极6的连接成为规定的坚固的连接。
此外,在绝缘带1中,由于从搭载了半导体元件3的区域的外周侧向中心侧配置了布线图形2a,所以成为相对于突起电极6连接部4a向半导体元件3的中心侧定位的形状。
此外,更详细地说,如图8所示,相对于半导体元件3的突起电极6的区域的长度Z,不设置布线图形2a的连接部4a的部分的长度W优选满足Z/3≤W≤2Z/3程度。这样一来,在接合突起电极6和布线图形2a的连接部4a时,即使产生了位置偏差的情况下,也可以使布线图形2a的前端部连结于半导体元件3的突起电极6上。例如,当长度W比长度Z的1/3左右小时,上述效果变小。此外,当长度W比长度Z的2/3左右大时,布线图形2a的连接部4a伸入的面积变小,连接强度减少了。
[变形例3]
对又一变形例进行说明。本变形例是对上述变形例2的变形例。在上述实施方式中,虽然对布线图形2a的宽度是比与半导体元件3的突起电极6对置的部分更细的形状的情况进行了说明,但是,并不限定于此。
即,如图9所示,布线图形中的连接部4c的宽度也可以是比与半导体元件3的突起电极6对置的部分宽的形状。该图9与变形例2种的图6(d)的B-B’线剖面相当。另外,在下面对具有与上述实施方式相同功能的部件、单元付与相同的符号来进行参照,省略其说明。
这样,即使是布线图形的宽度较宽的形状,由于布线图形仅设置到与半导体元件3的突起电极6对置的区域中途,所以当布线图形伸入突起电极6时,作为布线图形2a的连接部4c与突起电极6的连接状态,可以确保规定的强度。因此,可以使布线图形与突起电极6的连接成为规定的坚固的连接。
即,由于绝缘带的布线图形使半导体元件的突起电极的半导体元件中心侧的一部分残留并伸入突起电极、或压坏来进行连接,所以即使在布线图形的宽度比突起电极的宽度大的情况下,也可以获得与布线图形的宽度较小的情况同等的连接可靠性。
这里,有时难于对绝缘带1的布线图形的宽度进行精细加工。例如,在FPC(Flexible Printed Circuits:柔性印刷电路)厂家的刻蚀技术中,由于难于对绝缘带的布线图形的宽度进行精细加工,所以考虑布线图形的宽度变得比半导体元件的突起电极的宽度大的情况。在这样的情况中,若使用本变形例的结构,就可以获得使连接变坚固的COF。
另外,在现有的TCP带厂家中,在使布线图形的宽度变细这一点上是没有问题的。另外,由于现有的NCP等仅通过加压的接触和树脂的固化收缩来进行连接,所以在布线图形的宽度比突起电极的宽度大的情况下,连接可靠性进一步变低。
[变形例4]
进一步对其他变形例进行说明。本变形例是对上述变形例2的变形例。如本变形例所示,在半导体元件3与绝缘带1之间涂敷的绝缘性树脂7a中,可以分散有导电性粒子14。在下面对具有与上述实施方式相同功能的部件、单元付与相同的符号来进行参照,省略其说明。
即,如与图6(a)同样的图10(a)所示,在绝缘带1上配置布线图形2a,设置连接部4a,涂敷阻焊剂5。
而且,如图10(b)所示,涂敷分散有导电性粒子14的绝缘性树脂7a。导电性粒子14的材质并不进行特别的限定。例如,作为导电性粒子14,可以使用金涂层树脂粒子、镍粒子等。
其后,如图10(c)所示,使半导体元件3的突起电极(凸块)6与布线图形2a的连接部4a对置,使用未图示的脉冲式加热工具在箭头D1方向上加压。如图10(d)所示,在加压的状态下加热至230~250℃左右,将半导体元件3接合并搭载于绝缘性带1的表面上。由此,半导体元件3的突起电极6与绝缘带1的表面上配置的布线图形2a的对应连接部4a电连接。而且,利用绝缘性树脂7的热固化密封了半导体元件3。其后,使脉冲式加热工具的温度降低到常温附近后,解除加压。
如上所述,本发明的半导体装置具备:绝缘带,配置了多个布线图形;以及半导体元件,包括经由上述布线图形电连接于上述绝缘带上的突起电极,其特征在于,在上述绝缘带的布线图形中的、与上述半导体元件的突起电极对置的区域中,设置用于连接成使上述半导体元件的突起电极变形的同时伸入上述突起电极的连接部,并且在上述半导体元件与上述绝缘带之间配置了绝缘性树脂,上述绝缘带的布线图形中的上述连接部以推开上述绝缘性树脂并伸入上述半导体元件的突起电极的方式与上述突起电极连接。
此外,在上述结构中,也可以是上述绝缘带的布线图形从搭载了上述半导体元件的区域的外周侧向中心侧配置的结构。
本发明的半导体装置的特征是:在上述结构中,使上述布线图形的上述连接部的形状与上述布线图形的邻接于上述连接部的上述连接部之外的地方的形状不同。
这样,只要使连接部的形状与邻接于连接部的地方的形状不同,就可以在连接成连接部伸入突起电极的情况下,使用连接部作为钩连部,来使连接部与突起电极的接合变得坚固。
另外,只要连接部的形状与邻接于连接部的地方相同,连接部与突起电极之间就不会钩连。因此,就不能向上述那样来使强度提高。
本发明的半导体装置的特征是:在上述结构中,上述布线图形的边在上述连接部中包含不平行于上述布线图形的延伸方向的部分。
这样,只要连接部包含不平行于布线图形的延伸方向的边,就可以在连接成连接部伸入突起电极的情况下,使用连接部作为钩连部,来使连接部与突起电极的接合变得坚固。
另外,只要连接部的形状与邻接于连接部的地方相同,连接部与突起电极之间就不会钩连。
另外,上述半导体装置还可以表述为:上述布线图形的上述连接部中的边的形状是有至少大于等于两个的作为平行于区分该边的部分的独立方向。
本发明的半导体装置的特征是:在上述结构中,上述布线图形的连接部被设置成上述布线图形的宽度在至少一部分中变细。
这样,使一部分布线图形的宽度变细变窄,使用连接部作为钩连部,来使连接部与突起电极的接合变得坚固。
本发明的半导体装置的特征是:在上述结构中,上述布线图形的连接部被设置成上述布线图形的宽度与在搭载了上述半导体元件的区域的外周侧相比在中心侧变细。
这样,也可以使布线图形的宽度与搭载了半导体元件的区域的外周侧相比在中心侧较细。由此,使用连接部作为钩连部,来使连接部与突起电极的接合变得坚固。
另外,也可以将上述的半导体装置按如下来进行表述。即,可以表述为:一种半导体装置,具备:薄膜绝缘带,配置了多个布线图形;以及半导体元件,与上述布线图形电连接,该装置中,在上述半导体元件与上述绝缘带之间介有绝缘性树脂,连接了上述半导体元件的突起电极和上述绝缘带的布线图形,该装置是下述结构的COF半导体装置:与上述半导体元件的突起电极连接的上述绝缘带的布线图形的宽度在上述半导体元件的突起电极的中途部分中,与上述半导体元件的外周侧相比,在中心侧变细,连接上述半导体元件的突起电极和上述绝缘带的布线图形并且使上述绝缘性树脂固化,此时,上述绝缘带的布线图形以布线图形的上述形状、宽度伸入上述半导体元件的突起电极、或推挤一部分而进行连接。
本发明的半导体装置的特征是:在上述结构中,上述连接部中,上述布线图形的宽度变细的部分的长度相对于跨过与上述半导体元件的突起电极对置的区域的上述布线图形的长度之比为:大于等于1/3且小于等于2/3。
根据该结构,即使在接合突起电极和布线图形的连接部时产生了位置偏差的情况,也可以使布线图形的细宽度部容易连接于半导体元件的突起电极上。例如,当上述比例小于1/3的程度时,就考虑由于位置偏差细宽度部成为突起电极的外侧了,可获得的效果变小。此外,当上述比例大于2/3的程度时,布线图形的宽度较宽的部分伸入突起电极的面积变小,连接强度就减少了。
另外,上述结构还可以表述为:上述绝缘带的布线图形的宽度变细的长度是上述半导体元件的突起电极的长度的1/3~2/3左右。
本发明的半导体装置的特征是:在上述结构中,上述布线图形的连接部的形状是上述布线图形仅延伸至与上述半导体元件的突起电极对置的区域的中途。
这样,可以将包含布线图形的前端的区域配置成包含在对置于半导体元件的突起电极的区域中。即使是该结构,也可是使用连接部作为钩连部,来使连接部与突起电极的接合变得坚固。
本发明的半导体装置的特征是:在上述结构中,在上述绝缘带中,从搭载了上述半导体元件的区域的外周侧向中心侧配置了上述布线图形,对于上述连接部中的、上述布线图形所朝向方向的前端部,相互面对的上述布线图形彼此面对的前端间的距离比对应的上述半导体元件的突起电极间的距离长。
根据该结构,绝缘带的布线图形使半导体元件的突起电极的半导体元件中心侧的一部分残留并伸入突起电极。这样一来,由于各连接部被配置成从半导体元件的外周面向中心侧,所以就可以使接合进一步变得坚固。
另外,也可以将上述的半导体装置按如下来进行表述。即,可以表述为:一种半导体装置,具备:薄膜的绝缘带,配置了多个布线图形;以及半导体元件,与上述布线图形电连接,该装置中,在上述半导体元件与上述绝缘带之间介有绝缘性树脂,连接了上述半导体元件的突起电极和上述绝缘带的布线图形,该装置是具有下述特征的COF半导体装置:上述绝缘带的布线图形相面对的前端间的距离比对应的上述半导体元件的突起电极间的距离长,连接了上述半导体元件的突起电极和上述绝缘带的布线图形并且使上述绝缘性树脂固化,此时,上述绝缘带的布线图形使上述半导体元件的突起电极的半导体元件中心侧的一部分残留并伸入突起电极、或推挤并进行连接。
本发明的半导体装置的特征是:在上述结构中,上述连接部中,上述布线图形延伸的部分的长度相对于跨过与上述半导体元件的突起电极对置的区域的上述布线图形的长度之比为:大于等于1/3且小于等于2/3左右。
根据该结构,即使在接合突起电极和布线图形的连接部时产生了位置偏差的情况,也可以使布线图形的前端部连接于半导体元件的突起电极上。例如,当上述比例大于2/3的程度时,就考虑由于位置偏差前端部成为突起电极的外侧了,可获得的效果变小。此外,当上述比例小于1/3的程度时,布线图形的宽度较宽的部分伸入突起电极的面积变小,连接强度就减少了。
另外,上述结构还可以表述为:上述绝缘带的布线图形伸入上述半导体元件的突起电极或推挤并连接的长度是上述半导体元件的突起电极的长度的1/3~2/3左右。
本发明的半导体装置的特征是:在上述结构中,上述绝缘带的布线图形中,宽度较宽的部分中的宽度比上述半导体元件的突起电极的宽度小。
这样,只要是布线图形的较宽部分中的宽度小于半导体元件的突起电极的宽度的结构,就使例如使布线图形的形状与在连接部的其他地方不同情况,与相同的情况相比,可以增加布线图形与突起电极的连接面积。由此,可以提高接合强度。
另外,上述结构也可以表述为:是上述绝缘带的布线图形的较宽部分的宽度小于上述半导体元件的突起电极的宽度的结构。此外,上述结构还可以表述为:是与上述半导体元件的突起电极相连接一侧的上述绝缘带的布线图形的宽度小于上述半导体元件的突起电极的宽度的结构。
本发明的半导体装置的特征是:在上述结构中,上述绝缘带的布线图形中,宽度较宽的部分中的宽度与上述半导体元件的突起电极的宽度相比相同或较宽。
根据该结构即使是布线图形的宽度宽于突起电极的宽度,也可以使用本发明的结构。
这里,当在绝缘带上配置了布线图形时,有时根据情况不能对布线图形的宽度进行充分地精细加工。根据上述结构,即使在这样的情况下,也可以使用本发明的结构,从而提高接合强度。
另外,上述结构也可以表述为:是上述绝缘带的布线图形的较宽部分的宽度大于或等于上述半导体元件的突起电极的宽度的结构。此外,上述结构也可以表述为:是与上述半导体元件的突起电极相连接一侧的上述绝缘带的布线图形的宽度大于或等于上述半导体元件的突起电极的宽度的结构。
本发明的半导体装置的特征是:在上述结构中,上述绝缘性树脂包含导电性粒子。
可以使半导体元件的突起电极与布线图形的连接部的电连接更牢固。另外,上述结构也可以表述为:是预先使导电性粒子分散于上述绝缘性树脂中的结构。
本发明的半导体装置的制造方法如上所述,该半导体装置具备:绝缘带,配置了多个布线图形;以及半导体元件,包括经由上述布线图形与上述绝缘带电连接的突起电极,该制造方法其特征在于,包括:准备步骤,在上述绝缘带的布线图形中的、与上述半导体元件的突起电极对置的区域中,设置用于连接成使上述半导体元件的突起电极变形的同时伸入上述突起电极的连接部,并且在上述半导体元件与上述绝缘带之间配置了绝缘性树脂;以及连接步骤,上述绝缘带的布线图形中的上述连接部以推开上述绝缘性树脂并伸入上述半导体元件的突起电极的方式与上述突起电极连接。
本发明的半导体装置的制造方法的特征是:在上述结构中,在通过加热使上述绝缘带热膨胀的状态下进行上述连接步骤。
根据该结构,使绝缘性树脂加热固化并冷却至常温后,利用绝缘带的热收缩和绝缘性树脂的固化收缩,可以使半导体元件的突起电极与绝缘带的布线图形的连接部进行更坚固的固定(连接)。
另外,上述结构的半导体装置的制造方法也可以表述为:一种下述结构的COF半导体装置的制造方法,在上述半导体元件与上述绝缘带之间介有绝缘性树脂,连接上述半导体元件的突起电极和上述绝缘带的布线图形,此时,在通过加热使上述绝缘带热膨胀的状态的位置上进行连接,并且使上述绝缘性树脂加热固化,在冷却至常温后,利用上述绝缘带的热收缩和上述绝缘性树脂的固化收缩,使上述半导体元件的突起电极与上述绝缘带的布线图形的连接部进行更坚固的固定(连接)。
如上所述,连接半导体元件的突起电极和绝缘带的布线图形并且使绝缘性树脂固化,此时,绝缘带的布线图形以布线图形的上述形状、宽度伸入半导体元件的突起电极、或者推挤一部分进行连接,可以确保比较坚固的连接。因此,与现有的NCP等相比,可以与现有TCP等效地提高半导体元件的突起电极和绝缘带的布线图形的连接可靠性以及成品率。
此外,如上所述连接和密封的COF是下述这样的半导体装置:具备:薄膜的绝缘带,配置了多个布线图形;以及半导体元件,与上述布线图形电连接,在上述半导体元件与上述绝缘带之间介有绝缘性树脂,连接了上述半导体元件的突起电极和上述绝缘带的布线图形。而且,该半导体装置的特征在于:为了提高上述半导体元件的突起电极和上述薄膜绝缘带的布线图形的连接可靠性以及成品率,而具有以下的(a)~(c)的结构。
(a)与上述半导体元件的突起电极和上述绝缘带的布线图形的材质、电镀规格无关,与上述半导体元件的突起电极连接的上述绝缘带的布线图形的宽度在上述半导体元件的突起电极的中途部分(突起电极的长度的1/3~2/3左右),与上述半导体元件的外周侧相比在中心侧变细,连接上述半导体元件的突起电极和上述绝缘带的布线图形并且使上述绝缘性树脂固化,此时,上述绝缘带的布线图形以布线图形的上述形状和宽度伸入上述半导体元件的突起电极或者推挤一部分并进行连接。
(b)上述绝缘带的布线图形相面对的前端间的距离比对应的上述半导体元件的突起电极间的距离长,连接上述半导体元件的突起电极和上述绝缘带的布线图形并且使上述绝缘性树脂固化,此时,上述绝缘带的布线图形使上述半导体元件的突起电极的半导体元件中心侧的一部分(突起电极的长度的1/3~2/3左右)残留并伸入突起电极或者推挤并进行连接。
(c)在上述半导体元件与上述绝缘带之间介有绝缘性树脂,连接了上述半导体元件的突起电极和上述绝缘带的布线图形,此时,在通过加热使上述绝缘带热膨胀了的状态的位置上进行连接,并且使上述绝缘性树脂加热固化,在冷却至常温后,利用上述绝缘带的热收缩和上述绝缘性树脂的固化收缩,可以使上述半导体元件的突起电极与上述绝缘带的布线图形的连接部进行更坚固的固定(连接)。
此外,根据上述结构,通过:与上述半导体元件的突起电极和上述绝缘带的布线图形的材质、电镀规格无关,与上述半导体元件的突起电极连接的上述绝缘带的布线图形的宽度在上述半导体元件的突起电极的中途部分(突起电极的长度的1/3~2/3左右),与上述半导体元件的外周侧相比在中心侧变细,连接上述半导体元件的突起电极和上述绝缘带的布线图形并且使上述绝缘性树脂固化,此时,上述绝缘带的布线图形以布线图形的上述形状和宽度伸入上述半导体元件的突起电极或者推挤一部分并进行连接;上述绝缘带的布线图形相面对的前端间的距离比对应的上述半导体元件的突起电极间的距离长,连接上述半导体元件的突起电极和上述绝缘带的布线图形并且使上述绝缘性树脂固化,此时,上述绝缘带的布线图形使上述半导体元件的突起电极的半导体元件中心侧的一部分(突起电极的长度的1/3~2/3左右)残留并伸入突起电极或者推挤并进行连接;在上述半导体元件与上述绝缘带之间介有绝缘性树脂,连接了上述半导体元件的突起电极和上述绝缘带的布线图形,此时,在通过加热使上述绝缘带热膨胀了的状态的位置上进行连接,并且使上述绝缘性树脂加热固化,在冷却至常温后,利用上述绝缘带的热收缩和上述绝缘性树脂的固化收缩,可以使上述半导体元件的突起电极与上述绝缘带的布线图形的连接部进行更坚固的固定(连接);由此,可以与现有TCP等效地提高上述半导体元件的突起电极和上述薄膜绝缘带的布线图形的连接可靠性以及成品率。
如上所述,本发明的半导体装置是下述结构:在绝缘带的布线图形中的、与半导体元件的突起电极对置的区域中,设置用于连接成使上述半导体元件的突起电极变形的同时伸入上述突起电极的连接部,并且在上述半导体元件与上述绝缘带之间配置了绝缘性树脂,上述绝缘带的布线图形中的上述连接部以推开上述绝缘性树脂并伸入上述半导体元件的突起电极的方式与上述突起电极连接。
根据该结构,可以提高布线图形的连接部与半导体元件的突起电极的接合强度。
例如,在上述结构中,使布线图形的连接部的形状与邻接的位置不同,此外使布线图形的边包含与布线图形的延伸方向不平行的部分。此外例如,布线图形的连接部的宽度在至少一部分中变细,此外布线图形的宽度与搭载了半导体元件的区域的外周侧相比在中心侧变细。此外例如,使连接部包含布线图形的前端部。这样,就可以提高效果。
本发明的半导体装置由于可以提高连接可靠性和成品率,所以可以以低成本进行生产,可以作为大量生产用的半导体装置加以利用。
上述具体的实施方式或实施例,最终是为了使本发明的技术内容变得清楚的,本发明并不限于这些具体例而被进行狭义上的解释,在权利要求所示的范围内可以进行各种各样的变更,对于适当组合实施方式、变更的方式以及各变形例中分别公开的技术手段而得的实施方式,也都包含在本发明的技术范围内。
Claims (16)
1.一种半导体装置(10),具备:绝缘带(1),配置了多个布线图形(2);以及半导体元件(3),包括经由上述布线图形(2)电连接于上述绝缘带(1)上的突起电极(6),其特征在于,
在上述绝缘带(1)的布线图形(2)中的、与上述半导体元件(3)的突起电极(6)对置的区域中,设置用于连接成使上述半导体元件(3)的突起电极(6)变形的同时伸入上述突起电极(6)的连接部(4),并且在上述半导体元件(3)与上述绝缘带(1)之间配置了绝缘性树脂(7),
上述绝缘带(1)的布线图形(2)中的上述连接部(4)以推开上述绝缘性树脂(7)并伸入上述半导体元件(3)的突起电极(6)方式与上述突起电极(6)连接。
2.如权利要求1所述的半导体装置,其特征在于,
使上述布线图形(2)的上述连接部(4)的形状与上述布线图形(2)的邻接于上述连接部(4)的上述连接部(4)之外的地方的形状不同。
3.如权利要求1所述的半导体装置,其特征在于,
上述布线图形(2)的边在上述连接部(4)中包含不平行于上述布线图形(2)的延伸方向的部分。
4.如权利要求1所述的半导体装置,其特征在于,
上述布线图形(2)的连接部(4)被设置成上述布线图形的宽度在至少一部分中变细。
5.如权利要求1所述的半导体装置,其特征在于,
上述布线图形(2)的连接部(4)被设置成上述布线图形(2)的宽度与在搭载了上述半导体元件(3)的区域的外周侧相比在中心侧变细。
6.如权利要求5所述的半导体装置,其特征在于,
上述连接部(4)中,上述布线图形(2)的宽度变细部分的长度相对于跨过与上述半导体元件(3)的突起电极(6)对置的区域的上述布线图形(2)的长度之比为:大于等于1/3且小于等于2/3。
7.如权利要求1所述的半导体装置,其特征在于,
上述布线图形的连接部(4)的形状是上述布线图形(2)仅延伸至与上述半导体元件(3)的突起电极(6)对置的区域的中途。
8.如权利要求7所述的半导体装置,其特征在于,
在上述绝缘带(1)中,从搭载了上述半导体元件(3)的区域的外周侧向中心侧配置了上述布线图形(2),
对于上述连接部(4)中的、上述布线图形(2)所朝向方向的前端部,相互面对的上述布线图形(2)彼此相面对的前端间的距离比对应的上述半导体元件(3)的突起电极(6)间的距离长。
9.如权利要求8所述的半导体装置,其特征在于,
上述连接部(4)中,上述布线图形(2)延伸的部分的长度相对于跨过与上述半导体元件(3)的突起电极(6)对置的区域的上述布线图形(2)的长度之比为:大于等于1/3且小于等于2/3左右。
10.如权利要求1至9的任一项所述的半导体装置,其特征在于,
上述绝缘带(1)的布线图形(2)中,宽度较宽的部分中的宽度比上述半导体元件(3)的突起电极(6)的宽度小。
11.如权利要求1至9的任一项所述的半导体装置,其特征在于,
上述绝缘带(1)的布线图形(2)中,宽度较宽的部分中的宽度与上述半导体元件(3)的突起电极(6)的宽度相比相同或较宽。
12.如权利要求1至9的任一项所述的半导体装置,其特征在于,
上述绝缘性树脂(7)包含导电性粒子(14)。
13.如权利要求1所述的半导体装置,其特征在于,
上述连接部和上述突起电极利用上述绝缘带的热收缩和上述绝缘性树脂的固化收缩来进行连接。
14.一种半导体装置(10)的制造方法,该半导体装置(10)具备:绝缘带(1),配置了多个布线图形(2);以及半导体元件(3),包括经由上述布线图形(2)与上述绝缘带(1)电连接的突起电极(6),其特征在于,包括:
准备步骤,在上述绝缘带(1)的布线图形(2)中的、与上述半导体元件(3)的突起电极(6)对置的区域中,设置用于连接成使上述半导体元件(3)的突起电极(6)变形的同时伸入上述突起电极(6)的连接部(4),并且在上述半导体元件(3)与上述绝缘带(1)之间配置了绝缘性树脂(7);以及
连接步骤,使上述绝缘带(1)的布线图形(2)中的上述连接部(4)以推开上述绝缘性树脂(7)并伸入上述半导体元件(3)的突起电极(6)的方式与上述突起电极(6)连接。
15.如权利要求14所述的半导体装置的制造方法,其特征在于,
在通过加热使上述绝缘带(1)热膨胀的状态下进行上述连接步骤。
16.如权利要求15所述的半导体装置的制造方法,其特征在于,
在上述连接步骤中,在对上述绝缘带(1)进行加热使其连接之后,冷却到常温,通过绝缘带(1)的热收缩和上述绝缘性树脂(7)的固化收缩从而坚固地固定上述连接部(4)。
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TWI265618B (en) | 2006-11-01 |
JP2005302901A (ja) | 2005-10-27 |
CN100390973C (zh) | 2008-05-28 |
JP3833669B2 (ja) | 2006-10-18 |
TW200605305A (en) | 2006-02-01 |
KR100727506B1 (ko) | 2007-06-12 |
KR20060045563A (ko) | 2006-05-17 |
US7304394B2 (en) | 2007-12-04 |
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