TWI265618B - Semiconductor device and method for manufacturing same - Google Patents
Semiconductor device and method for manufacturing sameInfo
- Publication number
- TWI265618B TWI265618B TW094110888A TW94110888A TWI265618B TW I265618 B TWI265618 B TW I265618B TW 094110888 A TW094110888 A TW 094110888A TW 94110888 A TW94110888 A TW 94110888A TW I265618 B TWI265618 B TW I265618B
- Authority
- TW
- Taiwan
- Prior art keywords
- connection section
- semiconductor device
- protrusion electrode
- insulating resin
- manufacturing same
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000011347 resin Substances 0.000 abstract 3
- 229920005989 resin Polymers 0.000 abstract 3
Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
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- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83102—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus using surface energy, e.g. capillary forces
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
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- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
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- Condensed Matter Physics & Semiconductors (AREA)
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Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004114683A JP3833669B2 (ja) | 2004-04-08 | 2004-04-08 | 半導体装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
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TW200605305A TW200605305A (en) | 2006-02-01 |
TWI265618B true TWI265618B (en) | 2006-11-01 |
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Application Number | Title | Priority Date | Filing Date |
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TW094110888A TWI265618B (en) | 2004-04-08 | 2005-04-06 | Semiconductor device and method for manufacturing same |
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US (1) | US7304394B2 (zh) |
JP (1) | JP3833669B2 (zh) |
KR (1) | KR100727506B1 (zh) |
CN (1) | CN100390973C (zh) |
TW (1) | TWI265618B (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070087481A1 (en) * | 2005-10-19 | 2007-04-19 | Himax Technologies, Inc. | Underfill aiding process for a tape |
JP2007158081A (ja) * | 2005-12-06 | 2007-06-21 | Shinko Electric Ind Co Ltd | 実装基板および半導体装置 |
JP5076315B2 (ja) * | 2005-12-26 | 2012-11-21 | 富士ゼロックス株式会社 | 配線基板及びフリップチップ実装構造 |
CN100463158C (zh) * | 2006-08-21 | 2009-02-18 | 南茂科技股份有限公司 | 薄膜覆晶封装构造及其多层电路卷带结构 |
JP5018155B2 (ja) * | 2007-03-16 | 2012-09-05 | 富士通セミコンダクター株式会社 | 配線基板、電子部品の実装構造、及び半導体装置 |
KR100837281B1 (ko) * | 2007-05-23 | 2008-06-11 | 삼성전자주식회사 | 반도체 소자 패키지 및 그 제조 방법 |
JP2012119368A (ja) * | 2010-11-29 | 2012-06-21 | Elpida Memory Inc | 半導体装置の製造方法 |
KR102215881B1 (ko) * | 2014-02-17 | 2021-02-17 | 삼성디스플레이 주식회사 | 테이프 패키지 및 이를 포함하는 표시 장치 |
JP6507374B2 (ja) * | 2016-04-21 | 2019-05-08 | パナソニックIpマネジメント株式会社 | 部品圧着装置及び部品圧着方法 |
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US227256A (en) * | 1880-05-04 | Cattle-stanchion | ||
US3733685A (en) * | 1968-11-25 | 1973-05-22 | Gen Motors Corp | Method of making a passivated wire bonded semiconductor device |
JPS60262430A (ja) | 1984-06-08 | 1985-12-25 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
JPS63119552A (ja) * | 1986-11-07 | 1988-05-24 | Sharp Corp | Lsiチツプ |
JPH0777227B2 (ja) | 1986-12-16 | 1995-08-16 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6828812B2 (en) * | 1991-06-04 | 2004-12-07 | Micron Technology, Inc. | Test apparatus for testing semiconductor dice including substrate with penetration limiting contacts for making electrical connections |
US5495179A (en) * | 1991-06-04 | 1996-02-27 | Micron Technology, Inc. | Carrier having interchangeable substrate used for testing of semiconductor dies |
US5541525A (en) * | 1991-06-04 | 1996-07-30 | Micron Technology, Inc. | Carrier for testing an unpackaged semiconductor die |
US5326428A (en) * | 1993-09-03 | 1994-07-05 | Micron Semiconductor, Inc. | Method for testing semiconductor circuitry for operability and method of forming apparatus for testing semiconductor circuitry for operability |
US6414506B2 (en) * | 1993-09-03 | 2002-07-02 | Micron Technology, Inc. | Interconnect for testing semiconductor dice having raised bond pads |
JP2938344B2 (ja) * | 1994-05-15 | 1999-08-23 | 株式会社東芝 | 半導体装置 |
US6037786A (en) * | 1996-12-13 | 2000-03-14 | International Business Machines Corporation | Testing integrated circuit chips |
JPH10262430A (ja) * | 1997-03-25 | 1998-10-06 | Yasoji Harada | 土壌内付与物供給装置 |
US6130148A (en) * | 1997-12-12 | 2000-10-10 | Farnworth; Warren M. | Interconnect for semiconductor components and method of fabrication |
JPH11251363A (ja) | 1998-03-03 | 1999-09-17 | Olympus Optical Co Ltd | フリップチップ実装方法及びフリップチップ実装構造 |
JP3278055B2 (ja) * | 1998-06-30 | 2002-04-30 | セイコーインスツルメンツ株式会社 | 電子回路装置 |
JP3494940B2 (ja) | 1999-12-20 | 2004-02-09 | シャープ株式会社 | テープキャリア型半導体装置、その製造方法及びそれを用いた液晶モジュール |
JP2001223243A (ja) * | 2000-02-14 | 2001-08-17 | Seiko Epson Corp | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP3696820B2 (ja) * | 2001-10-10 | 2005-09-21 | 新光電気工業株式会社 | リードフレーム及びその製造方法 |
JP3582513B2 (ja) * | 2001-11-14 | 2004-10-27 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP3512772B2 (ja) * | 2001-12-26 | 2004-03-31 | Necエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP3722137B2 (ja) | 2002-08-21 | 2005-11-30 | セイコーエプソン株式会社 | 半導体装置の実装方法、半導体装置の実装構造、電気光学装置、電気光学装置の製造方法及び電子機器 |
JP4056424B2 (ja) | 2003-05-16 | 2008-03-05 | シャープ株式会社 | 半導体装置の製造方法 |
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US20050224939A1 (en) | 2005-10-13 |
KR100727506B1 (ko) | 2007-06-12 |
JP2005302901A (ja) | 2005-10-27 |
CN100390973C (zh) | 2008-05-28 |
KR20060045563A (ko) | 2006-05-17 |
TW200605305A (en) | 2006-02-01 |
US7304394B2 (en) | 2007-12-04 |
CN1684249A (zh) | 2005-10-19 |
JP3833669B2 (ja) | 2006-10-18 |
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