KR20070049964A - 전력용 반도체 모듈 - Google Patents

전력용 반도체 모듈 Download PDF

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KR20070049964A
KR20070049964A KR1020060107601A KR20060107601A KR20070049964A KR 20070049964 A KR20070049964 A KR 20070049964A KR 1020060107601 A KR1020060107601 A KR 1020060107601A KR 20060107601 A KR20060107601 A KR 20060107601A KR 20070049964 A KR20070049964 A KR 20070049964A
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South Korea
Prior art keywords
metal layer
power semiconductor
semiconductor module
power
logic
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KR1020060107601A
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English (en)
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KR101271283B1 (ko
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고블 크리스티안
칼르하인즈 어거스틴
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세미크론 엘렉트로니크 지엠비에치 앤드 코. 케이지
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Publication of KR20070049964A publication Critical patent/KR20070049964A/ko
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Abstract

기판(12), 결합 시트(14) 및 기판(12)과 결합 시트(14) 사이에 적어도 하나의 전력용 반도체 구성 요소(16)를 포함하는 전력용 반도체 모듈(10)이 제공된다. 결합 시트(14)는 회로 구조의 얇은 논리 금속층(26)과, 상기 논리 금속층에 비해 두꺼운 회로 구조의 전력용 금속층(28), 및 그 사이의 얇은 전기 절연성 합성 수지 시트(24)를 포함한다. 결합 시트(14)에는 적어도 하나의 반도체 구성 요소(16)와 접촉을 위한 접촉 돌기(30)가 형성되어 있다. 논리 금속층(26) 및 전력용 금속층(28) 사이에는 접촉 통공(32)이 제공되어 있다. 합성 수지 시트(24)에는 각 접촉 통공(32)의 영역에 논리 금속층(26)의 자유 영역(36)에 대한 공간(34)이 형성되어 있다. 얇은 배선(40)의 유연성 부분(38)이 논리 금속층(26)의 자유 영역(36) 및 공간(34)을 통해 합성 수지 시트(24)로 연장되어 있고, 논리 금속층(26) 및 전력용 반도체층(28)과 접합 부위(44, 48)를 통해 접촉된다.
전력용 반도체 모듈, 논리 금속층, 전력용 금속층, 결합 시트, 접촉 통공

Description

전력용 반도체 모듈 {Power Semiconductor Module}
도 1은 전력용 반도체 모듈의 형태를 나타낸 단면도.
도 2는 도 1의 II 부분에 대한 확대도.
<도면의 주요 부분에 대한 부호의 설명>
10: 전력용 반도체 모듈
12: (10에서) 기판
14: (10에서 16에 대한) 결합 시트
16: (10에서 12와 14 사이의) 전력용 반도체 구성 요소
18: (16에서) 컬렉터
20: (16에서) 이미터
22: (16에서) 게이트
24: (14에서) 전기 절연성 합성 수지 시트
26: (24에 대한) 회로 구조의 논리 금속층
28: (24에 대한) 회로 구조의 전력용 금속층
30: (14에서 16에 대한) 돌기
32: (26 및 28 사이의) 접촉 통공
34: (24에서 40에 대한) 공간
36: (26에서 40에 대한) 자유 영역
38: (40에서) 유연성 부분
40: (26 및 28 사이의) 얇은 배선
42: (40에서) 제1 말단부
44: (42에서 40과 26 사이의) 접합 부위
46: (40에서) 제2 말단부
48: (46에서 40과 28 사이의) 접합 부위
본 발명은 기판; 회로 구조의 논리 금속층과, 상기 논리 금속층에 비해 두꺼운 회로 구조의 전력용 금속층, 및 그 사이의 얇은 전기 절연성 합성 수지 시트를 포함하는 결합 시트; 및 상기 기판과 결합 시트 사이에 적어도 하나의 전력용 반도체 구성 요소를 포함하는 전력용 반도체 모듈로서, 상기 결합 시트에는 적어도 하나의 반도체 구성 요소와 접촉하기 위한 접촉 돌기가 형성되어 있으며, 상기 논리 금속층 및 상기 전력용 금속층 사이에는 접촉 통공이 제공되어 있는 전력용 반도체 모듈에 관한 것이다.
상기 유형의 전력용 반도체 모듈이 본 출원인이 출원한 DE 103 55 925 A 1에 공지되어 있다. 상기 공지된 전력용 반도체 모듈은 예를 들면 레이저 천공술 및 도전성 재료를 사용하는 후속 레이저 충전법에 의해 제조된다. 이를 위해, 수백 ㎛의 직경을 가진 접촉 통공이 요구된다. 이러한 접촉 통공의 제조는 무시할 수 없는 비용이 소요된다. 이외에도, 도전성 재료에 의한 충전시 열 팽창 계수와 같은 재료 특성을 갖는 충전-재료가 결합 시트의 재료에 대해 적절히 조정되어야 한다는 점을 고려하여야 한다.
이러한 여건을 감안하여, 본 발명의 과제는 상술한 기술의 전력용 반도체 모듈을 토대로 단순하고 비용 절감을 달성할 수 있으며, 접촉 통공을 단순하고 신뢰성있게 구현할 수 있는 전력용 반도체 모듈을 제공하는데 있다.
본 발명에 따른 상기 과제는, 상술한 기술 분야의 전력용 반도체 모듈에서 합성 수지 시트층에는 각 접촉 통공의 영역에 논리 금속층의 자유 영역에 대한 공간이 형성되어 있으며, 얇은 배선의 유연성 부분이 상기 논리 금속층의 자유 영역 및 상기 공간을 통해 상기 합성 수지 시트로 연장되어 있고, 상기 논리 금속층 및 상기 전력용 반도체층과 접합을 통해 접촉됨으로써 달성된다.
본 발명에 따른 전력용 반도체 모듈은 상기 논리 금속층의 회로 구조 및 전 력용 금속층의 회로 구조가 공정에 의해, 즉 에칭에 의해 동시에 제조되는 것이 바람직하다. 상기 에칭 공정은 공지의 방법으로 실시된다. 경우에 따라, 순환 연속적으로 실시되는 결합 시트의 마스크 에칭 공정인 것이 유리할 수 있다.
본 발명에 따른 반도체 모듈의 논리 금속층은 구리층인 것이 바람직하고, 전력용 금속층은 알루미늄층인 것이 바람직하다. 상기 논리 금속층과 전력용 금속층 사이의 합성 수지 시트는 폴리이미드로 제조되는 것이 바람직하다.
본 발명의 반도체 모듈의 결합 시트는 논리 금속층, 전력용 금속층 및 이들 층과 바람직하게는 대면 접착된 합성 수지 시트로 구성된다.
본 발명에 따른 전력용 반도체 모듈의 결합 시트의 합성 수지 시트 내 공간은 바람직하게는 레이저에 의해 형성된다. 이를 위해, 예를 들면 CO2-표식(marking) 레이저가 충분히 사용가능하다.
각 접촉 통공의 얇은 배선은 바람직하게는 알루미늄으로 구성되며, 예를 들면 25~100 ㎛의 직경을 가질 수 있다. 상기 얇은 배선의 회로 구조의 얇은 논리 금속층과 또한 회로 구조의 두꺼운 전력용 금속층과의 접합은 적절한 방법으로 표준의 얇은 배선-결합제를 사용하여 수행될 수 있다.
본 발명에 따른 전력용 반도체 모듈의 이점은 각각의 접촉 통공이 매우 유연하고 신뢰성이 있으며, 논리 금속층과 전력용 금속층의 결합을 위한 얇은 배선이 상기 논리 금속층과 전력용 금속층의 유연성을 고려하여 유연성을 갖는다는데 있다.
각 접촉 통공은 얇은 배선의 접합 후 논리 금속층 및 전력용 금속층에 대해 압인할 수 있고, 필요한 경우 적절한 절연성 물질에 의해 코팅될 수 있다.
본 발명에 따른 전력용 반도체 모듈의 개략적이고 그 축척이 정확하지 않게 도시되어 있는 실시예의 후술하는 기술 내용으로부터 본 발명의 상세한 내용, 특징 및 이점이 명확해진다.
도 1은 기판(12), 결합 시트(14) 및 기판(12)과 결합 시트(14) 사이에 제공되는 전력용 반도체 구성 요소(16)를 포함하는 전력용 반도체 모듈(10)의 형태를 단면적으로 나타낸다. 전력용 반도체 구성 요소(16)는 컬렉터(18), 이미터(20) 및 게이트(22)를 갖는다.
상기 결합 시트는 얇은 전기 절연성 합성 수지 시트(24)를 포함하며, 합성 수지 시트(24)의 주요 면에는 회로 구조의 얇은 논리 금속층(26)이 제공되고, 반대 면에는 회로 구조의 전력용 금속층(28)이 제공되어 있다.
결합 시트(14)에는 전력용 반도체 구성 요소(16)와 접촉을 위해 사용되는 돌기(30)가 형성되어 있다.
회로 구조의 얇은 논리 금속층(26)과 회로 구조의 전력용 금속층(28) 사이에 접촉 통공(32)이 제공되어 있으며, 도 1에는 하나의 접촉 통공(32) 만이 도시되어 있으며, 도 2에는 확대된 크기로 도시되어 있지만 그 축척이 정확하지는 않다. 도 2에 명백히 나타낸 바와 같이, 각각의 접촉 통공(32)의 영역에는 전기 절연성 합성 수지 시트(24)가 공간(34)과 함께 형성되어 있다. 공간(34)은 논리 금속층(26)의 구조화를 통해 자유 영역(36)의 하부에 형성되어 있다.
얇은 배선(40)의 유연성 부분(38)은 말단부(42)에 의해 회로 구조의 논리 금속층(26)에 견고하게 접합된다. 이러한 접합 부위는 부호 44에 의해 표시된다. 상기 접합 부위의 반대편에는 얇은 배선(40)의 제2 말단부(46)가 회로 구조의 전력용 금속층(28)에 견고하게 접합된다. 상기 접합 부위는 부호 48에 의해 표시된다.
도 1 및 도 2에서 동일한 구성 요소는 동일한 부호에 의해 표시되므로, 도 1에 기재되어 있는 도 2의 구성 요소에 대해 상세하게 각각 기재할 필요가 없다.
이상 설명한 바와 같이, 본 발명의 전력용 반도체 모듈에 의하면, 단순하고 비용 절감을 달성할 수 있으며, 접촉 통공을 단순하고 신뢰성있게 구현할 수 있다.

Claims (9)

  1. 기판(12); 회로 구조의 얇은 논리 금속층(26)과, 상기 논리 금속층에 비해 두꺼운 회로 구조의 전력용 금속층(28), 및 그 사이의 얇은 전기 절연성 합성 수지 시트(24)를 포함하는 결합 시트(14); 및 기판(12)과 결합 시트(14) 사이에 적어도 하나의 전력용 반도체 구성 요소(16)를 포함하며, 결합 시트(14)에는 적어도 하나의 반도체 구성 요소(16)와 접촉을 위한 접촉 돌기(30)가 형성되어 있으며, 논리 금속층(26) 및 전력용 금속층(28) 사이에는 접촉 통공(32)이 제공되어 있는 전력용 반도체 모듈로서,
    합성 수지 시트(24)에는 각 접촉 통공(32)의 영역에 논리 금속층(26)의 자유 영역(36)에 대한 공간(34)이 형성되어 있으며, 얇은 배선(40)의 유연성 부분(38)이 논리 금속층(26)의 자유 영역(36) 및 공간(34)을 통해 합성 수지 시트(24)로 연장되어 있고, 논리 금속층(26) 및 전력용 반도체층(28)과 접합 부위(44, 48)를 통해 접촉되는 것을 특징으로 하는 전력용 반도체 모듈.
  2. 제 1항에 있어서, 논리 금속층(26) 및 전력용 금속층(28)의 회로 구조가 에칭에 의해 동시에 형성되는 것을 특징으로 하는 전력용 반도체 모듈.
  3. 제 1항에 있어서, 논리 금속층(26)이 구리층이고, 전력용 금속층(28)이 알루미늄층인 것을 특징으로 하는 전력용 반도체 모듈.
  4. 제 1항에 있어서, 합성 수지 시트(24)가 폴리이미드로 제조되는 것을 특징으로 하는 전력용 반도체 모듈.
  5. 제 1항 내지 제 4항 중 어느 한 항에 있어서, 논리 금속층(26) 및 전력용 금속층(28)이 합성 수지 시트(24)와 대면 접착되는 것을 특징으로 하는 전력용 반도체 모듈.
  6. 제 1항에 있어서, 합성 수지 시트(24) 내 각 공간(34)이 레이저에 의해 형성되는 것을 특징으로 하는 전력용 반도체 모듈.
  7. 제 1항에 있어서, 얇은 배선(40)이 알루미늄으로 구성되는 것을 특징으로 하는 전력용 반도체 모듈.
  8. 제 1항에 있어서, 얇은 배선(40)이 25~100 ㎛의 직경을 갖는 것을 특징으로 하는 전력용 반도체 모듈.
  9. 제 1항 내지 제 8항 중 어느 한 항에 있어서, 접촉 통공(32)이 절연성 물질로 코팅되는 것을 특징으로 하는 전력용 반도체 모듈.
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