BRPI0604540A - módulo semicondutor de potência - Google Patents

módulo semicondutor de potência

Info

Publication number
BRPI0604540A
BRPI0604540A BRPI0604540-5A BRPI0604540A BRPI0604540A BR PI0604540 A BRPI0604540 A BR PI0604540A BR PI0604540 A BRPI0604540 A BR PI0604540A BR PI0604540 A BRPI0604540 A BR PI0604540A
Authority
BR
Brazil
Prior art keywords
metal layer
logic
power semiconductor
power
semiconductor module
Prior art date
Application number
BRPI0604540-5A
Other languages
English (en)
Inventor
Christian G Bl
Carlheinz Augustin
Original Assignee
Semikron Elektronik Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron Elektronik Gmbh filed Critical Semikron Elektronik Gmbh
Publication of BRPI0604540A publication Critical patent/BRPI0604540A/pt

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    • H05K3/4007—Surface contacts, e.g. bumps
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20757—Diameter ranges larger or equal to 70 microns less than 80 microns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0393—Flexible materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0352—Differences between the conductors of different layers of a multilayer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0367—Metallic bump or raised conductor not used as solder bump
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09209—Shape and layout details of conductors
    • H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09736—Varying thickness of a single conductor; Conductors in the same plane having different thicknesses
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007—Types of components
    • H05K2201/10166—Transistor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/049—Wire bonding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Metal Substrates For Printed Circuits (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

MóDULO SEMICONDUTOR DE POTêNCIA. A presente invenção refere-se a escreve-se um módulo semicondutor de potência 10 com um substrato (12), uma folha composta (14) e ao menos um componente semicondutor de potência (16) entre o substrato (12) e a folha composta (14). A folha composta (14) apresenta uma camada de metal lógica (26) estruturada em circuito e uma camada de metal de potência (28) estruturada em circuito, espessa em comparação com aquela, bem como entre as mesmas uma folha de plástico (24) fina, eletricamente isolante. A folha composta (14) é executada com nódulos de contato (30) para o contato com o ao menos um componente semicondutor de potência (16). Entre a camada de metal lógica (26) e a camada de metal de potência (28) estão previstas interconexões (32). A folha de plástico (24) é executada na região da respectiva interconexão (32) em uma região (36) isenta da camada de metal lógica (26) com um recesso (34). Uma peça (38) flexível de um arame fino (40) se estende pela região (36) isenta da camada de metal lógica (26) e pelo recesso (34) na folha de plástico (24) e é contactada com a camada de metal lógica (26) e com a camada de metal de potência (28) por pontos de soldadura (44, 48).
BRPI0604540-5A 2005-11-09 2006-11-08 módulo semicondutor de potência BRPI0604540A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005053398A DE102005053398B4 (de) 2005-11-09 2005-11-09 Leistungshalbleitermodul

Publications (1)

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BRPI0604540A true BRPI0604540A (pt) 2007-08-28

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BRPI0604540-5A BRPI0604540A (pt) 2005-11-09 2006-11-08 módulo semicondutor de potência

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US (1) US7638872B2 (pt)
EP (1) EP1786034B1 (pt)
JP (1) JP5134811B2 (pt)
KR (1) KR101271283B1 (pt)
CN (1) CN1964039B (pt)
AT (1) ATE497635T1 (pt)
BR (1) BRPI0604540A (pt)
DE (2) DE102005053398B4 (pt)
DK (1) DK1786034T3 (pt)
ES (1) ES2359256T3 (pt)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007044620A1 (de) 2007-09-19 2009-04-16 Semikron Elektronik Gmbh & Co. Kg Anordnung mit einer Verbindungseinrichtung und mindestens einem Halbleiterbauelement
DE102009017733B4 (de) * 2009-04-11 2011-12-08 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit einer Verbindungseinrichtung und mit als Kontaktfeder ausgebildeten internen Anschlusselementen
DE102010011719A1 (de) 2010-03-17 2011-09-22 Semikron Elektronik Gmbh & Co. Kg Verfahren zur Herstellung einer elektrisch leitenden Verbindung eines Kontaktes mit einem Gegenkontakt
DE102010012457B4 (de) 2010-03-24 2015-07-30 Semikron Elektronik Gmbh & Co. Kg Schaltungsanordnung mit einer elektrischen Komponente und einer Verbundfolie
EP2688101A1 (en) * 2012-07-20 2014-01-22 ABB Technology AG Method for electrically connecting vertically positioned substrates
DE102013114438A1 (de) 2013-12-19 2015-06-25 Karlsruher Institut für Technologie Leistungselektronikmodul und Verfahren zur Herstellung eines Leistungselektronikmoduls

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3361869A (en) * 1965-04-16 1968-01-02 Western Electric Co Circuit board and method of connecting connectors thereto
US3474297A (en) * 1967-06-30 1969-10-21 Texas Instruments Inc Interconnection system for complex semiconductor arrays
US4064552A (en) * 1976-02-03 1977-12-20 Angelucci Thomas L Multilayer flexible printed circuit tape
JPH01110742A (ja) * 1987-10-23 1989-04-27 Ibiden Co Ltd 電子部品搭載用両面フィルムキャリア
US5573632A (en) * 1989-02-23 1996-11-12 Fuji Xerox Co., Ltd. Multilayer printed-circuit substrate, wiring substrate and process of producing the same
JP2801810B2 (ja) * 1992-04-14 1998-09-21 株式会社東芝 樹脂封止型半導体装置
US5412539A (en) * 1993-10-18 1995-05-02 Hughes Aircraft Company Multichip module with a mandrel-produced interconnecting decal
DE19617055C1 (de) * 1996-04-29 1997-06-26 Semikron Elektronik Gmbh Halbleiterleistungsmodul hoher Packungsdichte in Mehrschichtbauweise
US6773965B2 (en) * 1999-05-25 2004-08-10 Micron Technology, Inc. Semiconductor device, ball grid array connection system, and method of making
JP3679687B2 (ja) 2000-06-08 2005-08-03 三洋電機株式会社 混成集積回路装置
DE10065495C2 (de) * 2000-12-28 2002-11-14 Semikron Elektronik Gmbh Leistungshalbleitermodul
JP2002319596A (ja) 2001-04-20 2002-10-31 Denso Corp ワイヤボンディングを用いた接続方法および接続構造
DE10121970B4 (de) * 2001-05-05 2004-05-27 Semikron Elektronik Gmbh Leistungshalbleitermodul in Druckkontaktierung
DE10205450A1 (de) * 2002-02-08 2003-08-28 Infineon Technologies Ag Schaltungsträger und Herstellung desselben
DE10355925B4 (de) * 2003-11-29 2006-07-06 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul und Verfahren seiner Herstellung

Also Published As

Publication number Publication date
ATE497635T1 (de) 2011-02-15
US7638872B2 (en) 2009-12-29
CN1964039A (zh) 2007-05-16
KR101271283B1 (ko) 2013-06-04
KR20070049964A (ko) 2007-05-14
CN1964039B (zh) 2010-11-10
EP1786034A3 (de) 2008-07-09
US20070102796A1 (en) 2007-05-10
DE102005053398B4 (de) 2008-12-24
EP1786034A2 (de) 2007-05-16
EP1786034B1 (de) 2011-02-02
JP5134811B2 (ja) 2013-01-30
JP2007134715A (ja) 2007-05-31
DE102005053398A1 (de) 2007-05-16
DK1786034T3 (da) 2011-04-18
ES2359256T3 (es) 2011-05-19
DE502006008846D1 (de) 2011-03-17

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