CN1964039B - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

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Publication number
CN1964039B
CN1964039B CN2006101365145A CN200610136514A CN1964039B CN 1964039 B CN1964039 B CN 1964039B CN 2006101365145 A CN2006101365145 A CN 2006101365145A CN 200610136514 A CN200610136514 A CN 200610136514A CN 1964039 B CN1964039 B CN 1964039B
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metal layer
power semiconductor
logic
semiconductor modular
plastic film
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CN1964039A (zh
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C·格布尔
K·奥古斯丁
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Semikron Elektronik GmbH and Co KG
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Abstract

本发明描述了一功率半导体模块(10)，其包括一基片(12)，一复合薄膜(14)和至少一个在基片(12)和复合薄膜(14)之间设置的功率半导体元件(16)。该复合薄膜(14)具有一电路结构形成的逻辑电路金属层(26)和一相对厚的电路结构形成功率金属层(28)以及在上述两金属层之间的一薄电绝缘塑料薄膜(24)。复合薄膜(14)设计为带有接触凸起部(30)，此接触凸起部用于至少一个功率半导体元件(16)触点接通。在逻辑电路金属层(26)和功率金属层(28)之间设置镀通孔(32)。塑料薄膜(24)在各个镀通孔(32)的区域内在逻辑电路金属层(26)的自由区域(36)上设计具有空隙(34)。柔性的薄片导线(40)的块(38)延伸通过逻辑电路金属层(26)上的自由区域(36)和通过塑料薄膜(24)中的空隙(34)，并且通过压焊点(44，48)与逻辑电路金属层(26)和功率金属层(28)触点接通。

Description

功率半导体模块
技术领域
本发明涉及一种功率半导体模块，包括基片，复合薄膜和至少一个基片和复合薄膜之间的功率半导体元件的，该复合薄膜具有一电路结构形成的逻辑电路金属层(Logikmetallschicht)和一相对厚的电路结构形成的功率金属层(Leistungsmetallschicht)以及在上述两金属层之间的薄的电绝缘塑料薄膜，其中复合薄膜设计成带有接触凸起部，用于与至少一个功率半导体元件的触点接通，并且在逻辑电路金属层和功率金属层之间设置镀通孔。
背景技术
由申请人的文献DE 103 55 925 A1已知一种此种类型的功率半导体模块。在这种已知的功率半导体模块中，镀通孔例如通过激光钻孔和紧接着用激光支持的导电材料的填充制成。因此镀通孔有可能具有几百微米的直径。此类镀通孔的制造与不被忽略的费用有关。除此之外在采用可导材料填充时还必须注意，填充材料与其材料特性例如其热膨胀系数与复合薄膜的材料相适应。
发明内容
基于对事实的认识，本发明的目的在于，提供一种开头提到的类型的功率半导体模块，其可简单并低廉地实现，并且在该功率半导体模块上镀通孔可简单且可靠地实现。
该目的按本发明在开头提到的类型的功率半导体模块上通过以下措施得以实现，即塑料薄膜位置在逻辑电路金属层的自由区域在各个镀通孔的区域内设计成具有空隙，并且薄片导线的柔性块延伸通过逻辑电路金属层自由区域和通过塑料薄膜内的空隙，并通过压焊与逻辑电路金属层和功率金属层触点接通。
在按本发明的功率半导体模块中如下是优选地，即如果逻辑电路金属层的电路结构和功率金属层的电路结构在一工序中制造，也就是说同时通过蚀刻制造。该蚀刻过程以本身已知的方式实施。在此合乎目的地涉及复合薄膜掩模蚀刻，该掩模蚀刻以有利的方式在一定程度上可无限地连续进行。
按本发明的半导体模块的逻辑电路金属层优选地是铜层，并且其功率金属层优选地是铝层。逻辑电路金属层和功率金属层之间的塑料薄膜优选地由聚酰亚胺制成。
在按本发明的半导体模块的复合薄膜中，逻辑电路金属层和功率金属层与塑料薄膜优选地平面地粘接。
按本发明的功率半导体模块的复合薄膜的塑料薄膜内各个空隙优选地通过激光制造。为此例如可以使用CO2-打印激光器(Beschriftungslaser)。
各个流量触电接通的薄片导线优选地由铝制成，其可以例如具有25-100μm的直径。合乎目的地，薄片导线与电路结构形成的薄的逻辑电路金属层和与电路结构形成的较厚的功率金属层的压焊连接用一标准-薄片导线-压焊机实施。
按本发明的功率半导体模块具有如下优点，即各个镀通孔都非常柔性和可靠，其中用于连接逻辑电路金属层和功率金属层的薄片导线具有柔性，所述柔性考虑到逻辑电路金属层和功率金属层的柔性。
各个镀通孔可以在薄片导线压焊之后冲压在逻辑电路金属层和功率金属层上并且在需要时用合适的绝缘材料进行覆盖。
其它细节，特征以及优点从以下按本发明的功率半导体模块的在附图中示出的且不按尺寸比例画出的实施样式的说明中得出。
附图说明
附图中：
图1示出功率半导体模块的构成的放大的且不按尺寸比例示出的局部剖视图；
图2示出图1细部II的另外一个放大图。
具体实施方式
图1部分地示出功率半导体模块10的构成，该功率半导体模块具有一基片12、一复合薄膜14和一功率半导体元件16，该功率半导体元件设置在基片12和复合薄膜14之间。功率半导体元件16具有一个集电极18，一个发射极20和一个控制极22。
复合薄膜具有一个薄的电绝缘塑料薄膜24，该塑料薄膜24在其一个主平面上设有一个薄的电路结构形成的逻辑电路金属层26并且在其背离上述主平面的主平面上设有一电路结构形成的功率金属层28。
复合薄膜14设计为凸起部30形式，该凸起部用于与功率半导体元件16的触点接通。
在电路结构形成的薄的逻辑电路金属层26和电路结构形成的功率金属层28之间设置了镀通孔32，其中图1中仅仅示出一个镀通孔32，该镀通孔在图2中以另外的放大比例示出，但是未按比例地示出。如图2中可明显地看到，电绝缘塑料薄膜24在各个镀通孔的区域内设计成具有空隙34。空隙34在从逻辑电路金属层26经过其结构体的自由区域36内，也就是在下部构成。
薄片导线40的柔性块38以其末端部分42在电路结构形成的逻辑电路金属层26处固定压焊。这通过附图标记44表示。薄片导线40的与此远离的第二个末端部分46在电路结构形成的功率金属层28处固定压焊。该压焊点用附图标记48表示。
相同的细节在图1和图2各自用相同的附图标记表示，因此与图1和图2有关地对所有细节相应详细的描述是不必要的。
附图标记清单
10功率半导体模块
12基片(10的)
14复合薄膜(用于16的10的)
16功率半导体元件(在12和14之间10)
18集电极(16的)
20发射极(16的)
22控制极(16的)
24电绝缘塑料薄膜(14的)
26电路结构形成逻辑电路金属层(24处)
28电路结构形成功率金属层(24处)
30凸起部(用于16的14的)
32镀通孔(26和28之间)
34空隙(24上的用于40的)
36自由区域(24上的用于40的)
38柔性块(40的)
40薄片导线(在26和28之间)
42第一末端部分(40的)
44压焊点(在42上40和26之间)
46第二末端部分(40的)
48压焊点(在46上40和28之间)

Claims (9)

1.一种功率半导体模块，包括一基片(12)，一复合薄膜(14)和至少一个在基片(12)和复合薄膜(14)之间的功率半导体元件(16)，该复合薄膜具有一薄的电路结构形成的逻辑电路金属层(26)和一相对厚的电路结构形成的功率金属层(28)以及在所述逻辑电路金属层(26)和所述功率金属层(28)之间的一薄的电绝缘的塑料薄膜(24)，其中复合薄膜(14)设计成带有接触凸起部(30)，用于与至少一个功率半导体元件(16)的触点接通，并且在逻辑电路金属层(26)和功率金属层(28)之间设置镀通孔(32)，其特征在于，塑料薄膜(24)在各个镀通孔(32)的区域内在逻辑电路金属层(26)的自由区域(36)上设计具有空隙(34)，薄片导线(40)的柔性块(38)延伸通过逻辑电路金属层(26)的自由区域(36)和通过塑料薄膜(24)中的空隙(34)，并且通过压焊点(44，48)与逻辑电路金属层(26)和功率金属层(28)触点接通。
2.按权利要求1所述的功率半导体模块，其特征在于，逻辑电路金属层(26)和功率金属层(28)的电路结构同时通过蚀刻制造。
3.按权利要求1所述的功率半导体模块，其特征在于，逻辑电路金属层(26)是铜层并且功率金属层(28)是铝层。
4.按权利要求1所述的功率半导体模块，其特征在于，塑料薄膜(24)由聚酰亚胺制成。
5.按权利要求1所述的功率半导体模块，其特征在于，逻辑电路金属层(26)和功率金属层(28)与塑料薄膜(24)平面地粘接。
6.按权利要求1所述的功率半导体模块，其特征在于，塑料薄膜(24)内的各个空隙(34)通过激光制成。
7.按权利要求1所述的功率半导体模块，其特征在于，薄片导线(40)由铝制成。
8.按权利要求1所述的功率半导体模块，其特征在于，薄片导线(40)具有25-100μm的直径。
9.按权利要求1所述的功率半导体模块，其特征在于，镀通孔(32)用绝缘材料覆盖。
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US7638872B2 (en) 2009-12-29
CN1964039A (zh) 2007-05-16
KR101271283B1 (ko) 2013-06-04
KR20070049964A (ko) 2007-05-14
BRPI0604540A (pt) 2007-08-28
EP1786034A3 (de) 2008-07-09
US20070102796A1 (en) 2007-05-10
DE102005053398B4 (de) 2008-12-24
EP1786034A2 (de) 2007-05-16
EP1786034B1 (de) 2011-02-02
JP5134811B2 (ja) 2013-01-30
JP2007134715A (ja) 2007-05-31
DE102005053398A1 (de) 2007-05-16
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DE502006008846D1 (de) 2011-03-17

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