CN1677638A - 用于检测半导体器件缺陷部分的方法和设备 - Google Patents
用于检测半导体器件缺陷部分的方法和设备 Download PDFInfo
- Publication number
- CN1677638A CN1677638A CN200510056199.0A CN200510056199A CN1677638A CN 1677638 A CN1677638 A CN 1677638A CN 200510056199 A CN200510056199 A CN 200510056199A CN 1677638 A CN1677638 A CN 1677638A
- Authority
- CN
- China
- Prior art keywords
- voltage
- memory cell
- circuit
- channel mos
- charge pump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 62
- 230000002950 deficient Effects 0.000 title claims abstract description 6
- 238000000034 method Methods 0.000 title claims description 11
- 230000004044 response Effects 0.000 claims abstract description 12
- 230000007547 defect Effects 0.000 claims abstract description 9
- 238000002955 isolation Methods 0.000 claims abstract description 9
- 238000001514 detection method Methods 0.000 claims description 19
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 87
- 239000003990 capacitor Substances 0.000 description 17
- 238000009413 insulation Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 238000007667 floating Methods 0.000 description 7
- 238000003491 array Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (16)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004101664A JP2005285289A (ja) | 2004-03-31 | 2004-03-31 | 半導体装置のテスト方法及びテスト装置 |
JP2004101664 | 2004-03-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1677638A true CN1677638A (zh) | 2005-10-05 |
CN100365789C CN100365789C (zh) | 2008-01-30 |
Family
ID=35050051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100561990A Expired - Fee Related CN100365789C (zh) | 2004-03-31 | 2005-03-31 | 用于检测半导体器件缺陷部分的方法和设备 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7138817B2 (zh) |
JP (1) | JP2005285289A (zh) |
CN (1) | CN100365789C (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931170A (zh) * | 2011-08-08 | 2013-02-13 | 中芯国际集成电路制造(上海)有限公司 | 一种检测结构及形成方法和检测方法 |
CN106298572A (zh) * | 2016-09-06 | 2017-01-04 | 上海华力微电子有限公司 | 一种检测连接栅极的首层金属块刻蚀不足缺陷的方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100867638B1 (ko) * | 2005-08-12 | 2008-11-10 | 삼성전자주식회사 | 전원전압 선택회로 및 이를 구비한 반도체 장치 |
TWI382425B (zh) * | 2008-06-24 | 2013-01-11 | United Microelectronics Corp | 檢測缺陷之測試系統及其測試方法 |
US7859285B2 (en) * | 2008-06-25 | 2010-12-28 | United Microelectronics Corp. | Device under test array for identifying defects |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4266283A (en) * | 1979-02-16 | 1981-05-05 | Intel Corporation | Electrically alterable read-mostly memory |
JP3119531B2 (ja) * | 1992-09-02 | 2000-12-25 | 富士通株式会社 | 半導体記憶装置 |
EP0595775B1 (en) * | 1992-10-29 | 1999-07-28 | STMicroelectronics S.r.l. | Method of evaluating the dielectric layer of nonvolatile EPROM, EEPROM and flash-EEPROM memories |
JPH0799221A (ja) * | 1993-03-29 | 1995-04-11 | Texas Instr Japan Ltd | 半導体デバイスのバーンインテスト回路及びその方法 |
JPH0927198A (ja) * | 1995-07-10 | 1997-01-28 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置の信頼性評価方法およびその不揮発性半導体記憶装置 |
JPH0997500A (ja) * | 1995-09-29 | 1997-04-08 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2000011699A (ja) * | 1998-06-29 | 2000-01-14 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
JP3314748B2 (ja) * | 1999-02-09 | 2002-08-12 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
JP2002110780A (ja) | 2000-09-20 | 2002-04-12 | United Microelectron Corp | シャロートレンチアイソレーション構造の製造方法 |
JP2002150781A (ja) * | 2000-11-09 | 2002-05-24 | Matsushita Electric Ind Co Ltd | 不揮発性記憶装置 |
JP2004152399A (ja) * | 2002-10-30 | 2004-05-27 | Renesas Technology Corp | 半導体記憶装置 |
-
2004
- 2004-03-31 JP JP2004101664A patent/JP2005285289A/ja active Pending
-
2005
- 2005-03-25 US US11/088,833 patent/US7138817B2/en active Active
- 2005-03-31 CN CNB2005100561990A patent/CN100365789C/zh not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102931170A (zh) * | 2011-08-08 | 2013-02-13 | 中芯国际集成电路制造(上海)有限公司 | 一种检测结构及形成方法和检测方法 |
CN102931170B (zh) * | 2011-08-08 | 2015-12-09 | 中芯国际集成电路制造(上海)有限公司 | 一种检测结构及形成方法和检测方法 |
CN106298572A (zh) * | 2016-09-06 | 2017-01-04 | 上海华力微电子有限公司 | 一种检测连接栅极的首层金属块刻蚀不足缺陷的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100365789C (zh) | 2008-01-30 |
US20050218922A1 (en) | 2005-10-06 |
US7138817B2 (en) | 2006-11-21 |
JP2005285289A (ja) | 2005-10-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10170489B2 (en) | High-voltage transistor having shielding gate | |
KR920001917B1 (ko) | 불휘발성 반도체기억장치 | |
KR100704021B1 (ko) | 신뢰성을 향상시키는 불휘발성 반도체 메모리 장치의데이터 소거방법 | |
US8009474B2 (en) | Semiconductor storage device and read voltage correction method | |
US6449188B1 (en) | Low column leakage nor flash array-double cell implementation | |
JP5159477B2 (ja) | 不揮発性半導体記憶装置およびその消去検証方法 | |
US20070183208A1 (en) | Nonvolatile semiconductor memory device and data writing method therefor | |
JP4504405B2 (ja) | 半導体記憶装置 | |
US6570787B1 (en) | Programming with floating source for low power, low leakage and high density flash memory devices | |
KR100794411B1 (ko) | 불휘발성 반도체 메모리를 구비한 반도체 집적 회로 장치및 그 기입 방법 | |
EP0522579A2 (en) | Level-shifter circuit for integrated circuits | |
US9330789B2 (en) | Short-checking methods | |
CN100365789C (zh) | 用于检测半导体器件缺陷部分的方法和设备 | |
KR960010736B1 (ko) | 마스크 rom 및 그 제조방법 | |
CN1697183A (zh) | 与非闪存装置及形成与非闪存装置的井的方法 | |
US20100054071A1 (en) | Semiconductor memory device | |
US6707733B2 (en) | Semiconductor memory device | |
US6717850B1 (en) | Efficient method to detect process induced defects in the gate stack of flash memory devices | |
JPH0468720B2 (zh) | ||
US7692960B2 (en) | Scheme of semiconductor memory and method for operating same | |
US10176874B2 (en) | Storage device and method of controlling the storage device | |
CN1921121A (zh) | 非对称浮动栅极与非型快闪存储器 | |
CN115527599A (zh) | 存储器件失效测试结构及测试方法 | |
EP0732751A1 (en) | Semiconductor memory device having metal-insulator transition film | |
CN117153219A (zh) | 半导体存储装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: RENESAS ELECTRONICS CO., LTD. Free format text: FORMER OWNER: NEC CORP. Effective date: 20101119 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20101119 Address after: Kanagawa, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: NEC Corp. |
|
CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa, Japan Patentee before: Renesas Electronics Corporation |
|
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080130 Termination date: 20190331 |
|
CF01 | Termination of patent right due to non-payment of annual fee |