CN1670958A - 硅氧化物氮化物氧化物半导体型存储器件 - Google Patents

硅氧化物氮化物氧化物半导体型存储器件 Download PDF

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CN1670958A
CN1670958A CNA2005100036659A CN200510003665A CN1670958A CN 1670958 A CN1670958 A CN 1670958A CN A2005100036659 A CNA2005100036659 A CN A2005100036659A CN 200510003665 A CN200510003665 A CN 200510003665A CN 1670958 A CN1670958 A CN 1670958A
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memory
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tunnel oxidation
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田尚勋
金桢雨
马东俊
崔圣圭
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Samsung Electronics Co Ltd
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Abstract

提供了一种SONOS型存储器，包括半导体衬底；配置在半导体衬底中、用预定导电性的杂质离子掺杂的、彼此分开预定距离的、并且之间插入沟道区的第一杂质区和第二杂质区；和在第一杂质区和第二杂质区之间的半导体衬底上形成的数据存储型堆叠。数据存储型堆叠包括依次形成的隧道氧化层、用于存储数据的存储节点层、阻挡氧化层和电极层。存储节点层的介电常数高于隧道氧化层的介电常数和阻挡氧化层的介电常数，并且存储节点层的能带差低于隧道氧化层的能带差和阻挡氧化层的能带差，隧道氧化层和阻挡氧化层是高介电绝缘层。

Description

硅氧化物氮化物氧化物半导体型存储器件
技术领域
本发明涉及半导体存储器件，更特别地涉及包含高介电层的硅氧化物氮化物氧化物半导体(silicon oxide nitride oxide semiconductor)(SONOS)型存储器件。
背景技术
半导体存储器件中存储数据的容量与每单位面积的存储单元数量(即集成密度)成比例。半导体存储器件包含许多彼此连接的存储单元。
在半导体存储器中，例如，DRAM，每个存储单元通常包含单个晶体管和单个电容器。因此，为了增加半导体存储器的集成密度，应该减小晶体管覆盖的面积和/或电容器覆盖的面积。
传统的低集成半导体存储器件在光刻和刻蚀过程中具有足够的工艺裕度(margin)。因此，可以仅通过降低如上所述的晶体管面积和/或电容面积，来增加半导体存储器的集成密度。
然而，随着半导体技术和相关电子工业的发展，强烈需要高集成半导体器件，但是传统的方法不能满足需要。
同时，半导体存储器的集成密度与应用于半导体存储器生产的设计规则密切相关。从而，为了改善半导体存储器的集成度，严格的设计规则应该应用于其生产过程。因此，光刻和刻蚀过程需要的工艺裕度变得极低。换言之，生产半导体存储器时使用的光刻和刻蚀过程需要比以前开发的工艺更精细的工艺裕度。
生产半导体存储器时，如果光刻和刻蚀过程需要的工艺裕度较低，则产率也降低。因此，需要一种增加半导体存储器集成密度的同时防止产率降低的新方法。
因此，已经开发了包含数据存储介质例如GMR或TMR的半导体存储器，其配置在晶体管上并执行不同于其它传统电容的数据存储功能。
SONOS存储器是新开发的存储器件。图1是传统的SONOS存储器的剖面图。
参考图1，传统的SONOS存储器包括P型半导体衬底10(以下，称为半导体衬底)、源区12、漏区14和沟道区16。源区12和漏区14用n-型杂质离子掺杂。沟道区16配置在源区12和漏区14之间。在半导体衬底10的沟道区16上形成栅叠加30。栅叠加30包括依次堆叠的隧道氧化层18、氮化硅(Si3N4)层20、阻挡氧化层22、和栅电极24。隧道氧化层18与源和漏区12和14接触。氮化硅层20具有预定密度的陷阱点(trap site)。从而，当预定电压施加于栅电极24时，已经通过隧道氧化层18的电子俘获在氮化硅层20中的陷阱点。隧道氧化层18和阻挡氧化层22可以由二氧化硅形成。
阻挡氧化层22防止在陷阱点俘获电子时电子移动到栅电极24。
在这种传统存储器件中，阀值电压随电子是否俘获在氮化硅层20的陷阱点中而变化。通过利用该特征，传统的SONOS存储器可以储存并读出数据。
然而，该传统SONOS存储器不仅需要很长时间擦除数据，而且具有较短的保留时间，即，它不能长时间保有存储数据。
此外，当隧道氧化层和阻挡氧化层由二氧化硅组成时，SONOS存储器需要约10V的高驱动电压，从而妨碍存储器的高集成度。
发明内容
本发明提供了一种硅氧化物氮化物氧化物半导体(SONOS)型存储器，其不需要高驱动电压，同时通常保留存储数据相对较长的时间。
根据本发明的一个方面，提供了一种SONOS型存储器，其包括半导体衬底；第一杂质区和第二杂质区；和数据存储型堆叠。该第一杂质区和第二杂质区配置在半导体衬底中，用预定导电性的杂质离子掺杂，并且彼此分开预定的距离。在这里，沟道区配置在第一杂质区和第二杂质区之间。而且，在第一杂质区和第二杂质区之间的半导体衬底上形成数据存储型堆叠。
数据存储型堆叠包括依次形成的隧道氧化层、存储数据的存储节点层(memory node layer)、阻挡氧化层和电极层。
存储节点层的介电常数高于隧道氧化层和阻挡氧化层的介电常数，存储节点层的能带差(band offset)低于隧道氧化层和阻挡氧化层的能带差。
隧道氧化层和阻挡氧化层是高介电绝缘层。
隧道氧化层可以由具有比二氧化硅(SiO2)介电常数高的材料形成的。隧道氧化层可以由氧化铝(Al2O3)形成。
存储节点层可以选自MO层、MON层和MSiON层(M是金属)之一。
M可以是Hf、Zr、Ta、Ti或镧系元素(Ln)，Ln可以是La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu。
存储节点层可以由HfO2形成。阻挡氧化层可以由Al2O3形成。
本发明的SONOS类型存储器可以极大地降低编程时间和擦除时间，从而改善数据处理速度。此外，因为存储器的驱动电压可以减少到约6V，存储器可以是高度集成的。
附图说明
通过参考相关附图详细描写示范性具体实施方式，本发明的上述特征和优点将变得更加显而易见。
图1是传统的硅氧化物氮化物氧化物半导体(SONOS)存储器的剖面图；
图2是根据本发明一个具体实施方式的SONOS型存储器的剖面图；
图3图解说明了相对于某些材料介电常数的带隙；
图4图解说明了与图2中显示的存储器的编程时间和擦除时间相应的平带电压VFB变化；
图5图解说明了图2显示的存储器中数据的保留时间；和
图6图解说明了图2中显示的存储器和传统存储器的存储窗的相对速率。
具体实施方式
现在将参考显示本发明示范性具体实施方式的附图更完全地描述本发明。为了清楚放大了附图中层和区域的厚度。
图2是根据本发明一个具体实施方式的硅氧化物氮化物氧化物半导体(SONOS)型存储器的剖面图。
参考图2，SONOS型存储器包括衬底40，例如P型半导体衬底，和在衬底40内形成的第一杂质区42和第二杂质区44。第一和第二杂质区42和44用预定导电性的杂质离子例如n-型杂质离子掺杂至预定深度。第一和第二杂质区42和44彼此分开预定距离，在第一和第二杂质区42和44之间形成用预定导电性的杂质离子掺杂的沟道区46。
在下文中，第一杂质区42和第二杂质区44分别称为源区和漏区。
在半导体衬底40上部源和漏区42和44之间，即在沟道区46上形成数据存储型栅堆叠60(在下文中称为栅堆叠)。栅堆叠60包括依次堆叠的隧道氧化层48、存储节点层50、阻挡氧化层52和电极层54。
隧道氧化层48接触沟道区46的整个表面，隧道氧化层48的外缘分别接触源区42和漏区44。隧道氧化层48由具有介电常数高于构成传统SONOS型存储器隧道氧化层的二氧化硅(SiO2)的材料形成，例如，隧道氧化层48可以由氧化铝(Al2O3)形成。此外，因为隧道氧化层48确定晶体管的特征，隧道氧化层48可以由构成栅绝缘层高介电材料形成。也就是说，之后描述的图3显示的介电材料Al2O3或MgO可以形成介电常数高于SiO2的隧道氧化层48。隧道氧化层48可以形成至厚度约1.5-5nm。
当适当电压施加至电极层54时，通过隧道氧化层48的电子被俘获在存储节点层50中。当电子俘获在存储节点层50中时，存储数据“1”。此外，当电子没有俘获在存储节点层50中时，存储数据“0”。因为存储节点层50包括在栅堆叠60中，该栅堆叠60可以适当地称为数据存储型。
如上所述，存储节点层50用作电子俘获层。因此，存储节点层50的陷阱点密度优选尽可能高。此外，存储节点层50由比之后描述的隧道氧化层48和阻挡氧化层52高的介电常数和更低的能带差的材料形成。因此，存储节点层50是由具有比隧道氧化层48和阻挡氧化层52更高俘获密度的材料形成。这里，能带差是指价带和费米能级之间的差距。基于上述考虑，存储节点层50可以是金属氧化物(MO)层、N-基金属氮氧化物(MON)层、金属氮氧化硅(MSiON)层。在MO层、MON层和MSiON层中，M代表金属材料、例如Hf、Zr、Ta、Ti或镧系元素(Ln)。Ln是La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb或Lu。最优选，存储节点层50是HfO2层。存储节点层50可以形成至厚度约5-25nm。
阻挡氧化层52插入存储节点层50和电极层54之间以防止存储节点层50中俘获的电子移动至电极层54。类似隧道氧化层48，阻挡氧化层52可以由比存储节点层50具有更高介电常数和更高能带差的材料形成。例如，阻挡氧化层52可以由氧化铝(Al2O3)形成。阻挡氧化层52可以形成至厚度约5-25nm。
用作栅电极的电极层54可以是用导电杂质离子掺杂的多晶硅层。电极层54可以是另一个导电层，例如硅化钨层。
配置在源和漏区42和44之间的沟道区46根据施加至栅堆叠60的电极层54的电压而打开或关闭。换言之，可以通过施加适当电压至电极层54来转换沟道区46的状态。因此，源和漏区42和44和栅堆叠60构成了开关器件例如晶体管。此外，因为栅堆叠60包括如上所述的存储节点层50，开关器件具有数据存储功能。因此，源和漏区42和44和栅堆叠60构成多功能器件，其同时具有开关功能和存储功能。多功能器件在结构上相当于晶体管，但是由于附加的数据存储功能，可以称为数据存储型或存储型晶体管。
图2中显示的SONOS型存储器的运转如下所述。通过电极层54施加第一预定栅电压Vg至栅堆叠60，并施加第一预定漏电压Vd至漏区44，从而在存储节点层50中存储数据。通过施加第二预定栅电压Vg′(Vg′＜Vg)至栅堆叠60，施加第二预定漏电压Vd′(Vd′＜Vd)至漏区44，并测定源和漏区42和44之间的电流大小来读出存储数据。
图3图解说明了相对于某些材料的介电常数的带隙；
参考图3，通常具有高介电常数的材料具有低带隙。隧道氧化层(图2的48)和阻挡氧化层(图2的52)可以由具有比SiO2介电常数高的材料例如氧化铝形成。存储节点层(图2的50)可以由具有比构成隧道氧化层48和阻挡氧化层52的氧化铝介电常数高的氧化物形成(例如HfO2)。
图4图解说明了与图2中显示的存储器的编程时间和擦除时间相应的平带电压VFB的变化；
本发明SONOS型存储器中，隧道氧化层48、存储节点层50和阻挡氧化层52是分别由Al2O3、HfO2和Al2O3形成的。为了测量与编程时间和擦除时间相应的平带电压，施加6V的编程电压和-6V的擦除电压至存储器。
参考图4，当编程时间和擦除时间都是1ms时，得到足以满足编程和擦除的约2V的存储窗。也就是说，可以在较短的时间内充分编程和擦除数据。
图5图解说明了图2显示的存储器中数据的保留时间。
参考图5，通过从较短时间段的结果外推，当对本发明存储器施加6V的编程电压和-6V的擦除电压，并且在用于得到图4显示结果的相同条件下编程和擦除时间保持在1ms时，甚至在10年后，平带电压的差值是1.4V。也就是说，本发明SONOS型存储器具有良好的存储特性。
图6图解说明了图2中显示的存储器和传统存储器的存储窗的相对速率。参考图6，ONO是指传统的包括SiO2-Si3N4-SiO2的SONOS型存储器，OHA是指包括SiO2-HfO2-Al2O3的SONOS型存储器，AHA是指包括Al2O3-HfO2-Al2O3的SONOS型存储器。
参考图6，当假定本发明AHA存储器的存储窗是100％时，其它存储器的存储窗小于50％。也就是说，本发明存储器具有比传统存储器更好的存储特性。
尽管本发明的具体实施方式中仅描述了AHA型，但本发明并不限于此。本发明的SONOS型存储器可以包括其能带图具有优良结构的三个高介电绝缘层，例如HfO2-TiO2-HfO2或ZrO2-SrTiO2-ZrO2。
如至今说明的，本发明SONOS型存储器包括由比SiO2介电常数高的Al2O3形成的隧道氧化层和阻挡氧化层，以及由比Al2O3介电常数高的HfO2形成的存储节点层。因此，如图4中可以看到的，可以甚至在低驱动电压(例如6V)下，同时缩短编程时间和擦除时间，从而增加数据处理速度。而且，由图5中可见的，本发明存储器可以具有较长的保留时间。因此，本发明可以有助于改善存储器件的集成密度。
虽然参考示范性具体实施方式已经详细显示和描述了本发明，在不脱离所附权利要求定义的本发明精神和范围情况下的多种形式和细节的变化是本领域普通技术人员可以想到的。

Claims (7)

1.一种硅氧化物氮化物氧化物半导体(SONOS)型存储器件，其包括：
半导体衬底；
配置在半导体衬底中的第一杂质区和第二杂质区，第一杂质区和第二杂质区用预定导电性的杂质离子掺杂，并彼此分开预定距离，其中沟道区配置在第一杂质区和第二杂质区之间；和
在第一杂质区和第二杂质区之间的半导体衬底上形成数据存储型堆叠，
其中数据存储型堆叠包括依次形成的隧道氧化层、用于存储数据的存储节点层、阻挡氧化层和电极层，
存储节点层的介电常数高于隧道氧化层的介电常数和阻挡氧化层的介电常数，存储节点层的能带差低于隧道氧化层的能带差和阻挡氧化层的能带差，
并且隧道氧化层和阻挡氧化层是高介电绝缘层。
2.权利要求1的器件，其中隧道氧化层是由介电常数高于二氧化硅(SiO2)的材料形成的。
3.权利要求2的器件，其中隧道氧化层是由氧化铝(Al2O3)形成的。
4.权利要求1-3中任何一项的器件，其中存储节点层选自MO层、MON层和MSiON层(M是金属)。
5.权利要求4的器件，其中M是选自Hf、Zr、Ta、Ti和镧系元素(Ln)的金属，Ln是选自La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb和Lu的金属。
6.权利要求3的器件，其中存储节点层是由HfO2形成的。
7.权利要求6的器件，其中阻挡氧化层是由Al2O3形成的。
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