CN1157793C - 嵌入式快闪存储器及其操作方法 - Google Patents
嵌入式快闪存储器及其操作方法 Download PDFInfo
- Publication number
- CN1157793C CN1157793C CNB011091150A CN01109115A CN1157793C CN 1157793 C CN1157793 C CN 1157793C CN B011091150 A CNB011091150 A CN B011091150A CN 01109115 A CN01109115 A CN 01109115A CN 1157793 C CN1157793 C CN 1157793C
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- Prior art keywords
- doped region
- voltage
- ion doped
- line voltage
- flash memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000011017 operating method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000009413 insulation Methods 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 45
- 230000005283 ground state Effects 0.000 claims description 15
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 230000000694 effects Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB011091150A CN1157793C (zh) | 2001-03-06 | 2001-03-06 | 嵌入式快闪存储器及其操作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CNB011091150A CN1157793C (zh) | 2001-03-06 | 2001-03-06 | 嵌入式快闪存储器及其操作方法 |
Publications (2)
Publication Number | Publication Date |
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CN1373517A CN1373517A (zh) | 2002-10-09 |
CN1157793C true CN1157793C (zh) | 2004-07-14 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CNB011091150A Expired - Fee Related CN1157793C (zh) | 2001-03-06 | 2001-03-06 | 嵌入式快闪存储器及其操作方法 |
Country Status (1)
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CN (1) | CN1157793C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101587863B (zh) * | 2008-05-23 | 2011-03-23 | 中芯国际集成电路制造(上海)有限公司 | 用于基于sonos的快闪存储的多晶硅栅极蚀刻方法和器件 |
CN101859776B (zh) * | 2009-04-07 | 2012-06-20 | 北京兆易创新科技有限公司 | 一种非挥发性存储器以及其制造、编程和读取方法 |
CN102610277B (zh) * | 2011-01-20 | 2015-02-04 | 中国科学院微电子研究所 | 一种非挥发性存储器件的编程方法 |
CN103346156B (zh) * | 2013-06-28 | 2017-03-08 | 上海华虹宏力半导体制造有限公司 | 电可擦可编程只读存储器 |
TWI555131B (zh) * | 2014-03-18 | 2016-10-21 | 力晶科技股份有限公司 | Nor型快閃記憶體及其製造方法 |
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2001
- 2001-03-06 CN CNB011091150A patent/CN1157793C/zh not_active Expired - Fee Related
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Publication number | Publication date |
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CN1373517A (zh) | 2002-10-09 |
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C14 | Grant of patent or utility model | ||
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Owner name: LIJING SEMICONDUCTOR CO., LTD. Free format text: FORMER OWNER: LIWANG ELECTRONIC CO., LTD Effective date: 20050318 |
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Effective date of registration: 20050318 Address after: Hsinchu city of Taiwan Province Patentee after: Powerchip Semiconductor Corp. Address before: Hsinchu city of Taiwan Province Patentee before: Liwang Electronic Co., Ltd |
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Granted publication date: 20040714 Termination date: 20100306 |