CN1644726A - High-strength high-conductivity copper alloy - Google Patents

High-strength high-conductivity copper alloy Download PDF

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Publication number
CN1644726A
CN1644726A CNA2005100046612A CN200510004661A CN1644726A CN 1644726 A CN1644726 A CN 1644726A CN A2005100046612 A CNA2005100046612 A CN A2005100046612A CN 200510004661 A CN200510004661 A CN 200510004661A CN 1644726 A CN1644726 A CN 1644726A
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copper alloy
dispersion
present
electric conductivity
conductivity
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CN1269979C (en
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有贺康博
梶原桂
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Kobe Steel Ltd
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Kobe Steel Ltd
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    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C9/00Alloys based on copper
    • C22C9/02Alloys based on copper with tin as the next major constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Disclosed is a copper alloy containing Fe of 0.01 to 0.5% and P of 0.01 to 0.3% in mass with the balance consisting of copper and unavoidable impurities, wherein the mass content ratio of Fe to P, namely Fe/P, is in the range from 0.5 to 6.0 and the volume fraction and the number of dispersoids of 1 to 20 nm in average particle diameter in the microstructure of the copper alloy are 1.0% or more and 300 pieces/mum<SUP>2 </SUP>or more, respectively. The Cu-Fe-P alloy can secure a high strength and a high conductivity simultaneously.

Description

The copper alloy of high-strength high-conductivity
Technical field
The present invention relates to a kind of copper alloy of high-strength high-conductivity, for example relate to a kind of copper alloy that in semiconducter device, uses, its suitable material as the IC lead frame.Copper alloy according to the present invention is used for various fields, but below, as representational application, the present invention is based on the situation that copper alloy is used for the IC lead frame and make an explanation, described IC lead frame is a semiconductor element.
Background technology
As the copper alloy that is used for the IC lead frame, normally used so far is the Cu-Fe-P alloy.For example, as the international standard alloy, use a kind of copper alloy (C19210 alloy) that contains the P of 0.05 to 0.15% Fe and 0.025 to 0.040% widely, or a kind of copper alloy (CDA194 alloy) that contains the Zn of 2.1 to 2.6% Fe, 0.015 to 0.15% P and 0.05 to 0.20%, reason is in copper alloy, it has excellent intensity, electroconductibility and thermal conductivity.
In recent years, owing to require semiconducter device to have bigger capacity, littler size and the integrated level of Geng Gao, reducing the cross-sectional area of IC lead frame.Because this trend, the copper alloy element that requirement is used for the IC lead frame of semiconducter device has higher intensity, electroconductibility and thermal conductivity.And this situation is not only applicable to the employed copper alloy of IC lead frame, and is applicable to other conducting element in electronics and the electrical element, as junctor, and terminals, switch, rly. etc.
An advantage of Cu-Fe-P alloy is that it has high electric conductivity, and in order to improve its intensity, adopts the method that increases Fe and P content so far, or adds the method for Sn, Mg as the third element, Ca etc.But the increase of this amount of element causes intensity to improve, but worsens electric conductivity inevitably.Therefore, be difficult to only obtain a kind of like this Cu-Fe-P alloy by the chemical constitution of controlling copper alloy, it is at high conductivity more and more have good balance between the high strength, or has more large vol along with semiconducter device, smaller szie and the desired character of above-mentioned trend of high integration more simultaneously.
In order to overcome difficulties, advise being controlled at microstructure and sedimentation state in the dispersion in the Cu-Fe-P alloy up to now.For example, JP-A No.285261/2000 has proposed an Albatra metal-, it has excellent strength stability and softening resistance, and wherein Fe content is suitably 1.0 to 3.0%, and average particulate diameter is that the volume fraction of the dispersion of 0.05 to 10 μ m is 0.5 to 10%.
The copper alloy of the amount of the compound of suggestion raising smaller szie.For example, JP-A No.130755/1998 has proposed a kind of copper alloy of high-strength high-conductivity, it contains 0.05 to 3.5% Fe and 0.01 to 1.0% P, wherein particle is categorized as particle (small-particle) that particle diameter is lower than 0.02 μ m and particle diameter and is 0.02 to 100 particle (macrobead), and small-particle is 1 or bigger with oarse-grained quantity ratio.In addition; JP-A No.324935/1998 has proposed the copper alloy of the high softening resistance of a kind of high strength; it contains 0.5 to 5% Fe and 0.01 to 0.2% P, and wherein particle diameter be 100 or above macrobead and particle diameter less than the short grained ratio of 100 is 0.004 to 1.000.
And, JP-A No.220594/1994 has proposed a kind of technology, it is by containing 0.01 to 0.3% Fe, 0.005 P to 0.4%, 1.5 the Sn of the Zn to 5% and 0.2 to 2.5%, and regulate the size of the compound that contains Fe and P,, improve intensity and softening resistance so that make its chap to surpassing 150 .In addition, JP-A No.178670/2000 has proposed a kind of copper alloy of high-strength high-conductivity, it contains total amount is 0.05 to 2% Fe and P, 5 to 35% Zn and 0.1 to 3% Sn, and wherein particle diameter is 0.2 μ m or following Fe and the compound homodisperse of P.
But, the technology of sedimentation state that control contains the compound (dispersion) of Fe and P in the Cu-Fe-P alloy recited above is not primarily focused on the dispersion that average particulate diameter is 20nm or the littler compound that contains Fe and P, this average particulate diameter than in these technology, regulate those are also little.
In fact, in the described file technology, have some regulations to the dispersion of the compound that contains Fe and P etc. in the above, the thin average particulate diameter of described dispersion is no more than 20nm.But any technology of sedimentation state of controlling the compound of this Fe of containing and P does not have the magnification of such regulation TEM (transmission electron microscope), so that can observe the dispersion that thin average particulate diameter is no more than the compound that contains Fe and P of 20nm.Even during the regulation magnification, the magnification of regulation also is at most 10,000.By the TEM of 10,000 magnifications, can not observe so thin dispersion.In order quantitatively and exactly to understand the state (size and quantity) that thin average particulate diameter is no more than the dispersion of 20nm, must observe with at least 100,000 times TEM.
Conclusion is that file technology recited above is not understood the compound dispersion itself that contains Fe and P etc. that thin average particulate diameter is no more than 20nm basically, and does not recognize that basically fine dispersions is to the copper alloy Effect on Performance.
In addition, in the described in the above file technology, under the situation of JP-A No.285261/2002 and 324935/1998, Fe content up to 0.5% or more than, and under the situation of JP-A No.220594/1994 and 178670/2000, the content height of Zn and Sn.Therefore, these technology are the common situations of prior art that improve Fe and P content as explained above or add the third element.Given this, although increased fine dispersions, reduced electric conductivity inevitably.
Therefore, do not realize more high strength and more high conductivity simultaneously by routine techniques recited above, and for realizing that a kind of like this Cu-Fe-P alloy has strict restriction, described Cu-Fe-P alloy has good balance between the intensity of higher electric conductivity and Geng Gao, or has more large vol along with semiconducter device, smaller szie and the desired character of above-mentioned trend of high integration more simultaneously.
Summary of the invention
Summary of the invention
The present invention is determined to address these problems, and its purpose is to provide a kind of have simultaneously more high strength and more the Cu-Fe-P alloy of high conductivity.
As a preferred aspect, main points of the present invention are: a kind of copper alloy of high-strength high-conductivity, and it contains the P of 0.01 to 0.5% Fe (by mass, down with) and 0.01 to 0.3%, and surplus is made up of copper and unavoidable impurities; And in copper alloy, the mass content ratio of Fe and P, that is, Fe/P is 0.5 to 6.0, and in the microstructure of copper alloy, average particulate diameter is that the volume fraction of 1 to 20nm dispersion and quantity are respectively 1.0% or above and 300/μ m 2Or more than.
In the present invention, arrange the Cu-Fe-P alloy like this, so that in copper alloy according to the above-mentioned rule of arranging by particulate volume fraction and quantity, containing average particulate diameter as much as possible is 20nm or following dispersion, as containing the refinement compound of Fe and P, described dispersion is not noted so far the role and influence of copper alloy character or is recognized.
So, Fe and P by relative low levels, a kind of Cu-Fe-P alloy of high-strength high-conductivity can be provided, be not less than 80%IACS during the level of (tensile strength be 480 to 530MPa) that its electric conductivity is 140 to 150Hv in hardness, perhaps, even when hardness is the level of 160Hv (tensile strength is 570MPa), be not less than 75%IACS.
DESCRIPTION OF THE PREFERRED
The microstructure of copper alloy
The term of being quoted among the present invention " dispersion " is meant that its average particulate diameter is 1 to 20nm dispersion with the microstructure of 100,000 times of transmission electron microscope observation copper alloys the time.The main component of dispersion is the Fe-P compound, and dispersion is mainly by forming by add the compound that contains Fe and P etc. that Fe, Cu-P compound etc. form in main component.
So thin dispersion is new formation in the production process of copper alloy, for example in the annealing process after cold rolling.That is, so thin dispersion forms trickle sedimentary compound phase by the copper matrix by annealing.Therefore, they be different from during casting form and just be present in coarse dispersion the microstructure of copper alloy from beginning.Given this, unless with the microstructure that is not less than 100,000 times transmission electron microscope observation copper alloy, otherwise can not observe so thin dispersion.
The volume fraction of the dispersion that the present invention regulation is so thin and quantity are respectively 1.0% or above and 300/μ m 2Or more than.Exceed all expections for the transfer that suppresses so thin dispersion dislocation and the blocking performance of disappearance, significantly greater than than these thick dispersions.Therefore, by arranging the Cu-Fe-P alloy, be 20nm or littler dispersion so that in the microstructure of copper alloy, contain average particulate diameter as much as possible, as contain the refinement compound of Fe and P, improve blocking performance recited above, can obtain higher intensity thus.
At average particulate diameter is under the situation of 20nm or littler so thin dispersion, and the effect that the copper alloy electric conductivity is reduced significantly is lower than the situation than these thicker dispersions.
Therefore, compare with the dispersion thicker than fine dispersions, fine dispersions can be strengthened copper alloy, and the electric conductivity of copper alloy is reduced still less.
As mentioned above, average particulate diameter is low above the blocking performance of the coarse dispersion of 20nm.For this reason, the average particulate diameter of regulation dispersion of the present invention on be limited to 20nm.On the other hand, under the dispersion situation of average particulate diameter less than 1nm, promptly use 100,000 times transmission electron microscope also to be difficult to detect and measure them, its blocking performance reduces on the contrary in addition.For this reason, the following 1nm that is limited to of the average particulate diameter of regulation dispersion of the present invention.
When the volume fraction of so thin dispersion be lower than 1.0% or its quantity be less than 300/μ m 2The time, the particulate quantity of display effect is not enough, the high strength in the time of therefore can not obtaining 140 to 150Hv (tensile strength is 480 to 530MPa levels) level.And under the condition of quantity in a certain chemical constitution of the so thin dispersion of stipulating in as the present invention hour, most probably Yu Xia dispersion exists with more coarse form.The result, electric conductivity reduces, and can not be met and when electric conductivity be 140 to 150Hv in the hardness level of (tensile strength be 480 to 530MPa), be not less than 80%IACS, even or when hardness is the level of 160Hv (tensile strength is 570MPa), be not less than high rigidity and the high conductivity of 75%IACS.
In addition, regulation average particulate diameter of the present invention is the content of 1 to 20nm fine dispersions.But as long as satisfy this regulation, then acceptable is, in the scope that does not hinder the object of the invention, the coarse dispersion that average particulate diameter surpasses 20nm is present in the microstructure of copper alloy with suitable amount.
In the present invention, the diameter d of dispersion is defined as the mean value of the maximum diameter of each dispersion.In other words, will be in visual field with 100,000 times of transmission electron microscope observations, averaging the value that obtains by the diameter d with each dispersion is average particulate diameter alleged among the present invention.Acceptable is further will to average in the measuring result in a plurality of visual fields fully.
Equally, as for the quantity of dispersion, will be in visual field (to carrying out image analysis) by observable image with 100,000 times of transmission electron microscope observations, by the quantity/μ m of every kind of dispersion that will record 2The value that averages and obtain is the quantity of dispersion alleged among the present invention.Acceptable is further will to average in the measuring result in a plurality of visual fields fully.
Similarly, as for the volume fraction of the dispersion among the present invention, in visual field, obtain at 1 μ m * 1 μ m (1 μ m with 100,000 times of transmission electron microscope observations 2) the zone in average particulate diameter be the area percentage of 1 to 20nm dispersion, and be the volume fraction of dispersion with resulting value defined.
The chemical constitution of copper alloy
Below explain the reason of regulation chemical constitution in copper alloy according to the present invention.As for chemical constitution, in order to reach high strength and high conductivity, arrange like this according to copper alloy of the present invention, so that it contains by mass 0.01 to 0.5% Fe and 0.01 to 0.3% P basically, surplus is made up of copper and unavoidable impurities, the mass content ratio of Fe and P wherein, that is, Fe/P is 0.5 to 6.0.
As mentioned above, that intensity adopts in order to improve up to now, the amount by increasing element is as increasing the content of Fe and P, or adds the third element such as modes such as Sn, Mg, Ca can be gained in strength, but electric conductivity worsens inevitably.A very big benefit of the present invention is, although do not adopt this means of the amount that increases element in order to improve intensity, by top described regulation to fine dispersions, can obtain higher intensity and the electric conductivity of Geng Gao.
Notice that acceptable is, as required, do not hindering more high strength of the present invention and more in the scope of high conductivity, also contain 0.005 to 0.5% Zn and/or 0.001 to 0.5% Sn according to copper alloy of the present invention.
Fe:0.01 to 0.5%
In copper alloy, Fe a kind ofly improves intensity and the necessary element of softening resistance by being deposited as the fine dispersions of stipulating among the present invention.When Fe content was lower than 0.01%, Gui Ding fine dispersions was not enough in the present invention.For this reason, must make Fe content be not less than 0.01%, to show effectively for the effect of strengthening etc.On the other hand, when the Fe that contains surpasses 0.5%, do not guarantee high conductivity.And, if attempt improving the amount of dispersion in order to ensure high conductivity, then can cause the roughening of sedimentary particle, and disadvantageously, Gui Ding fine dispersions becomes not enough in the present invention.As a result, intensity reduces, and can not realize obtaining simultaneously higher intensity and the electric conductivity of Geng Gao.For this reason, determine that Fe content is by mass in 0.01 to 0.5% scope.
P:0.01 to 0.3%
P has oxidative function, and is a kind ofly to improve intensity and the necessary element of softening resistance by form dispersion with Fe.When P content is lower than 0.01%, Gui Ding fine dispersions is not enough in the present invention.For this reason, must make P content be not less than 0.01%, to show effectively for the effect of strengthening etc.On the other hand, when the P that contains surpassed 0.3%, electric conductivity worsened and does not guarantee high electric conductivity.In addition, hot workability also worsens.For this reason, determine that P content is by mass in 0.01 to 0.3% scope.
Fe/P:0.5 to 6.0
For the fine dispersions of the defined in the present invention that deposits top defined amount, the present invention not only stipulates single content of planting of Fe and P, but also the mass content ratio of regulation Fe and P, i.e. Fe/P.When the value of Fe/P less than 0.5 the time, the P that contains is excessive and be dissolved in the copper matrix, electric conductivity worsens and does not guarantee high electric conductivity thus.On the other hand, when the value of Fe/P surpassed 6.0, disadvantageously, the Fe that contains was excessive and be grown to coarse simple Fe particle, and the result is that intensity reduces.For this reason, determine that the value of Fe/P is in 0.5 to 6.0 scope.
Zn:0.005 to 0.5%
Zn is that the Sn of a kind of effective raising joint of being used for electronic component electroplates or the heat-resisting abradability of welding and suppress the element of thermal wear.Preferably contain and be not less than 0.005% Zn, to show this effect effectively.But when containing when surpassing 0.5% Zn, not only the wet spreadability of fusion Sn or scolder worsens on the contrary, and electric conductivity significantly worsens.For this reason, optionally contain Zn in 0.005 to 0.5 quality % scope.
Sn:0.001 to 0.5%
Sn helps the raising of copper alloy intensity.Preferably contain and be not less than 0.001% Sn, to show this effect effectively.But when containing when surpassing 0.5% Sn, the saturated and electric conductivity of effect worsens significantly.For this reason, optionally contain Sn in 0.001 to 0.5 quality % scope.
Other element, for example, Al, Cr, Ti, Be, V, Nb, Mo, W, Mg, Ni etc. are impurity, and not only promote the formation of coarse dispersion, but also promote the deterioration of electric conductivity.For this reason, in total amount was no more than the scope of 0.5 quality %, preferably the lowland reduced this content as far as possible.Other element that contains with trace in copper alloy also promotes the deterioration of electric conductivity as B, C, Na, S, Ca, As, Se, Cd, In, Sb, Pb, Bi, MM (norium).For this reason, in total amount was no more than the scope of 0.1 quality %, preferably the lowland reduced content as far as possible.
The preparation method
Then, explain that below the microstructure be used for making copper alloy becomes the preferred preparation condition of the structure that the present invention stipulates.
In process for producing copper alloy according to the present invention, needn't greatly change preparation method itself, and common preparation method can be used for preparation.That is, cast the molten copper alloy of its chemical constitution according to top described adjusting.Then, the surface of polishing ingot casting, then heat-treat or soaking after ingot casting is carried out hot rolling, and the plate body of water after cooling hot-rolled.Then, plate body is called as the cold rolling for the first time of intermediate rolling, annealing purifies then, carry out then final (last) cold rolling, the result, preparation becomes the copper alloy plate of product thickness etc.
In the preparation method, anneal under the condition when effectively preparing below, to form the dispersion structure, wherein as mentioned above, average particulate diameter is that the volume fraction of 1 to 20nm dispersion and quantity are respectively 1.0% or above and 300/μ m 2Or more than.
That is, as mentioned above, Gui Ding fine dispersions forms trickle sedimentary compound phase by annealing from the copper matrix in the present invention.In order to deposit so thin dispersion, in the preparation method of copper alloy, after first cold rolling, anneal.
Here, if be intended to only just obtain high electric conductivity, must improve annealing temperature by once annealing.If the raising annealing temperature, the amount of dispersion increases, and this will cause the growth and the alligatoring of dispersion.Given this, preferably by following method control annealing process, so that form the dispersion structure of forming by fine dispersions recited above: annealing is divided into several times; Control each annealing temperature to 430 ℃ or lower; Obtain high conductivity thus, and suppress the growth and the alligatoring of dispersion.
In addition, cold rolling when carrying out between annealing and annealing subsequently, the cold rolling lattice imperfection that causes increases, and lattice imperfection plays a part deposition nuclear when annealing subsequently, therefore can obtain the dispersion structure of being made up of fine dispersions recited above.
Therefore, consider condition recited above, in the preparation method of copper alloy, preferred such method, so that between hot rolling latter stage and final (last) are cold rolling, repeat twice for cold rolling and annealing separately, because can obtain this dispersion structure of forming by fine dispersions recited above.
The hold-time of determining the top temperature in annealing is 0.5 to 20 hour.When the hold-time was shorter than 0.5 hour, sedimental amount was not enough, and electric conductivity does not improve.On the contrary, when the hold-time surpassed 20 hours, even when 430 ℃ or lower temperature, sedimentary particle was also grown and alligatoring.
Embodiment
Embodiment
Below explain according to embodiments of the invention.Have copper alloy by casting, prepare copper alloy plate, and assess its performance at the various compositions shown in the following table 1.Here, have in the copper alloy of the various compositions shown in the following table 1, as for the element except that the element shown in the table 1, the total amount of Al, Cr, Ti, Be, V, Nb, Mo, W, Mg, Ni etc. is no more than 0.5 quality %.In addition, as for the element except element recited above still, the total amount of the B that contains a little in copper alloy, C, Na, S, Ca, As, Se, Cd, In, Sb, Pb, Bi, MM (norium) etc. is no more than 0.1 quality %.
The concrete preparation method of copper alloy plate is as follows:
Fusing and refined matte alloy in coreless induction furnace by the semi-continuous casting method casting, are prepared the ingot casting that 70mm is thick, 200mm is wide and 500mm is long then thus.Then, polish the surface of every block casting ingot, and the heating ingot casting, it is thick to become 16mm 950 ℃ of hot rollings then.Polish the surface of every hot-rolled sheet once more, to remove descaling, then every hot-rolled sheet is repeated cold rolling and the annealing predetermined times, described number of times is (cold rolling identical with the annealed number of times) between one to three time, is shown in Table 1 as for the annealing number of times of each embodiment.Then, copper alloy plate is carried out last cold rolling, and the thick copper alloy plate of preparation 0.2mm.The highest annealing temperature in repeating to anneal is defined as the highest annealing temperature, and the highest annealing temperature of each embodiment is shown in Table 1.
From the copper alloy plate cutting sample of all embodiment of preparation thus, and carry out by the volume fraction (%) of the fine dispersions of observing every kind of structure and measurement, tension test, hardness measurement and the conductivity measurement of quantity.The results are shown in the table 1.
In the observation of structure, when with the microstructure of 100,000 times of transmission electron microscope observation copper alloys, measure volume fraction (%) and the quantity that average particulate diameter is 1 to 20nm dispersion by measuring method recited above.
Carry out tension test for the JIS#13 sample, described sample is by it is prepared in the direction cutting parallel with rolling direction.When applying the 0.5kg load, measure hardness with miniature Vickers hardness tester.
Obtain electric conductivity by following method: by the wide rectangular specimen long of rolling formation 10mm with 300mm; With bi-bridge type electric resistance measuring apparatus measuring resistance; Calculate by the average cross-section method then.
As by it is evident that in the table 1, under the situation of inventive embodiments 1 to 9, every Albatra metal-plate contains 0.01 to 0.5% Fe and 0.01 to 0.3% P, wherein the value of Fe/P is 0.5 to 6.0, these values and optionally contain Zn and Sn in specialized range respectively aptly in the compositing range according to copper alloy of the present invention.In addition, as for the preparation method, under preferred annealing conditions, prepare copper alloy plate.
As a result, under the situation of inventive embodiments 1 to 9, when with the microstructure of 100,000 times the every Albatra metal-of transmission electron microscope observation, average particulate diameter is that the volume fraction of 1 to 20nm dispersion and quantity are respectively 1.0% or above and 300/μ m 2Or more than.
The result, every Albatra metal-plate obtains: 83 to 80%IACS electric conductivity during be 144 to 157Hv in the hardness level of (tensile strength be 503 to 552MPa), even 86 to 82%IACS electric conductivity has high strength and high conductivity thus during perhaps be 161 to 165Hv in the hardness level of (tensile strength be 570 to 581MPa).
On the contrary, as by it is evident that in the table 1, under the situation of comparing embodiment 10, the Fe content in the copper alloy is 0.007% and is lower than described lower limit.As a result, although anneal under preferred condition, the volume fraction of fine dispersions is 0.8% and is lower than described lower limit that hardness, tensile strength and electric conductivity are all low thus.
Under the situation of comparing embodiment 11, under preferred condition, annealing, and the volume fraction of fine dispersions and quantity are aptly in the scope of the present invention's regulation.But the Fe content in the copper alloy is 0.66% and surpasses the described upper limit, so electric conductivity is extremely low, can not realize obtaining simultaneously more high strength and more high conductivity thus.
Under the situation of comparing embodiment 12, the P content in the copper alloy is 0.008% and is lower than described lower limit.As a result, although anneal under preferred condition, the volume fraction of fine dispersions is 0.9% and is lower than described lower limit that hardness, tensile strength and electric conductivity are all low thus.
Under the situation of comparing embodiment 13, under preferred condition, annealing, and the volume fraction of fine dispersions and quantity are aptly in the scope of the present invention's regulation.But the P content in the copper alloy is 0.33% and surpasses the described upper limit, so electric conductivity is extremely low, can not realize obtaining simultaneously more high strength and more high conductivity thus.
Under the situation of comparing embodiment 14, although Fe in copper alloy and P aptly in the scope of the present invention regulation,, the value of Fe/P is 0.31 and is lower than lower limit.As a result, although anneal under the preferred condition and the volume fraction of fine dispersions and quantity aptly in the scope of the present invention's regulation, compare with tensile strength with hardness, electric conductivity is considerably low.
Under the situation of comparing embodiment 15, although the content of Fe in copper alloy and P aptly in the scope of the present invention regulation,, the value of Fe/P is 6.50 and surpasses the upper limit.For this reason, although anneal under preferred condition, the quantity of fine dispersions is 250/μ m 2And be lower than lower limit.As a result, hardness, tensile strength and electric conductivity are all low.
Under the situation of comparing embodiment 16, under preferred condition, annealing, and the volume fraction of fine dispersions and quantity are aptly in the scope of the present invention's regulation.But the Zn content in the copper alloy is 1.2% and surpasses the described upper limit, and the result compares with hardness, and electric conductivity is quite low, do not obtain more high strength and more realization high conductivity the time thus.In addition, because Zn content height, possible weldability is poor.
Under the situation of comparing embodiment 17, under preferred condition, annealing, and the volume fraction of fine dispersions and quantity are aptly in the scope of the present invention's regulation.But the Sn content in the copper alloy is 0.9% and surpasses the described upper limit, and the result compares with tensile strength with hardness, and electric conductivity is quite low, can not realize obtaining simultaneously more high strength and more high conductivity thus.
Under the situation of comparing embodiment 18, although the composition of copper alloy in the scope of the present invention regulation, the highest annealing temperature is 500 ℃ and surpasses the preferred upper limit that the volume fraction of fine dispersions is 1.8% and approaches lower limit, and its quantity is 200/μ m 2And be lower than lower limit.As a result, hardness and electric conductivity are all low.
Under the situation of comparing embodiment 19, although the composition of copper alloy also in the scope of the present invention regulation, only anneal and once and not carry out repeatedly, and the quantity of fine dispersions is 150/μ m 2And be lower than lower limit.As a result, hardness, tensile strength and electric conductivity are all low.
Under the situation of comparing embodiment 20, although its form with inventive embodiments 1 in identical and also in the scope that the present invention stipulates, but be 0.2 hour and be lower than preferred lower limit in hold-time of high annealing temperature, and the volume fraction of fine dispersions and quantity are respectively 0.6% and 250/μ m 2And all be lower than lower limit.As a result, its electric conductivity is markedly inferior to inventive embodiments 1.
Under the situation of comparing embodiment 21, although its form with inventive embodiments 5 in identical and also in the scope that the present invention stipulates, is 30 hours and is higher than the preferred upper limit in hold-time of high annealing temperature, and the quantity of fine dispersions is 280/μ m 2And be lower than lower limit.As a result, its hardness and tensile strength all are inferior to the hardness and the tensile strength of inventive embodiments 5.
Under the situation of comparing embodiment 22, although its form with inventive embodiments 9 in identical and also in the scope that the present invention stipulates, the highest annealing temperature is 460 ℃ and is higher than the preferred upper limit, and the quantity of fine dispersions is 230/μ m 2And be lower than lower limit.As a result, its hardness and tensile strength all are inferior to inventive embodiments 9.
In copper alloy plate according to the present invention, in order to guarantee higher intensity and the electric conductivity of Geng Gao, result recited above guarantees the decisive significance of chemical constitution, structure and preferred annealing conditions etc.
[table 1]
Sequence number Chemical ingredients (quality %) At hot rolling and the final annealing number of times that adopts between cold rolling The highest annealing temperature (℃) The annealing time length (hour) Particle volume per-cent (%) Amounts of particles is (individual/μ m 2) The characteristic of the finished product
????Fe ????P ??Fe/P ????Zn ??Sn Hardness (Hv) Tensile strength (Mpa) Electric conductivity (%IACS)
Inventive embodiments ??1 ????0.16 ????0.05 ??3.20 ????- ??- ????2 ??410 ????5 ????5.0 ????1000 ????155 ????545 ????89
??2 ????0.11 ????0.04 ??2.75 ????- ??- ????2 ??380 ????8 ????3.7 ????1200 ????149 ????524 ????88
??3 ????0.05 ????0.04 ??1.25 ????- ??- ????2 ??350 ????10 ????2.6 ????1400 ????144 ????503 ????83
??4 ????0.45 ????0.24 ??1.88 ????- ??- ????2 ??430 ????6 ????7.7 ????800 ????162 ????572 ????79
??5 ????0.38 ????0.08 ??4.75 ????0.03 ??- ????2 ??420 ????7 ????6.0 ????900 ????157 ????552 ????80
??6 ????0.10 ????0.03 ??3.33 ????0.2 ??- ????2 ??380 ????14 ????4.2 ????1250 ????153 ????540 ????85
??7 ????0.28 ????0.11 ??2.55 ????0.05 ??0.01 ????2 ??400 ????10 ????5.9 ????1050 ????165 ????581 ????82
??8 ????0.12 ????0.04 ??3.00 ????0.3 ??0.3 ????2 ??390 ????2 ????4.4 ????1200 ????163 ????575 ????75
??9 ????0.17 ????0.06 ??2.83 ????0.01 ??0.03 ????3 ??370 ????18 ????5.2 ????1300 ????161 ????570 ????86
Comparing embodiment ??10 ????0.007 ????0.01 ??0.70 ????- ??- ????2 ??340 ????5 ????0.8 ????1000 ????132 ????453 ????76
??11 ????0.66 ????0.19 ??3.47 ????- ??- ????2 ??430 ????10 ????9.1 ????700 ????148 ????519 ????65
??12 ????0.02 ????0.008 ??2.50 ????- ??- ????2 ??360 ????5 ????0.9 ????900 ????133 ????457 ????75
??13 ????0.48 ????0.33 ??1.45 ????- ??- ????2 ??420 ????12 ????8.8 ????750 ????149 ????522 ????61
??14 ????0.14 ????0.45 ??0.31 ????- ??- ????2 ??400 ????8 ????4.7 ????1050 ????151 ????533 ????56
??15 ????0.13 ????0.02 ??6.50 ????- ??- ????2 ??390 ????10 ????3.5 ????250 ????129 ????440 ????70
??16 ????0.20 ????0.06 ??3.33 ????1.2 ??- ????2 ??400 ????7 ????5.6 ????1150 ????157 ????549 ????62
??17 ????0.33 ????0.14 ??2.36 ????- ??0.9 ????2 ??420 ????5 ????7.0 ????1000 ????166 ????582 ????58
??18 ????0.06 ????0.02 ??3.00 ????0.03 ??- ????2 ??500 ????2 ????1.8 ????200 ????125 ????424 ????88
??19 ????0.08 ????0.03 ??2.67 ????0.01 ??0.01 ????1 ??480 ????3 ????4.5 ????150 ????122 ????409 ????87
??20 ????0.16 ????0.05 ??3.20 ????- ??- ????2 ??410 ????0.2 ????0.6 ????250 ????159 ????565 ????68
??21 ????0.38 ????0.08 ??4.75 ????0.03 ??- ????2 ??400 ????30 ????6.8 ????280 ????148 ????520 ????82
??22 ????0.17 ????0.06 ??2.83 ????0.01 ??0.03 ????2 ??460 ????5 ????5.3 ????230 ????143 ????499 ????87
As explained above, the present invention can provide an Albatra metal-, and it can satisfy more high strength and the more requirement of high conductivity, and this requirement is along with the cross-sectional area that reduces the IC lead frame occurs.In addition, the present invention can obtain more high strength and the more copper alloy of high conductivity, and it not only is used for the IC lead frame, and is used for other conducting element, as the junctor in electronics and electrical element, terminals, switch, rly. etc.
According to preferred embodiment invention recited above has been described.But, one of ordinary skill in the art will recognize that: the many variants that have these embodiments.Within the scope of the present invention and appended claim, comprise these variants.

Claims (3)

1. the copper alloy of a high-strength high-conductivity, it contains the Fe of 0.01 to 0.5 quality % and the P of 0.01 to 0.3 quality %, and surplus is made up of copper and unavoidable impurities,
Wherein
The mass content ratio of Fe and P, that is, Fe/P be 0.5 to 6.0 and
In the microstructure of copper alloy, average particulate diameter is that the volume fraction of 1 to 20nm dispersion and quantity are respectively 1.0% or above and 300/μ m 2Or more than.
2. copper alloy according to claim 1 also contains the Zn of 0.005 to 0.5 quality %.
3. copper alloy according to claim 1 also contains the Sn of 0.001 to 0.5 quality %.
CNB2005100046612A 2004-01-23 2005-01-21 High-strength high-conductivity copper alloy Expired - Fee Related CN1269979C (en)

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FR2865478B1 (en) 2008-05-30
DE102005002763B4 (en) 2012-04-26
CN1269979C (en) 2006-08-16
DE102005002763A1 (en) 2005-08-18
KR20050076767A (en) 2005-07-27
KR100651303B1 (en) 2006-11-29
FR2865478A1 (en) 2005-07-29
US20050161126A1 (en) 2005-07-28
JP4041803B2 (en) 2008-02-06
JP2005206891A (en) 2005-08-04

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