CN1637169A - 用于半导体器件的电镀方法 - Google Patents

用于半导体器件的电镀方法 Download PDF

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Publication number
CN1637169A
CN1637169A CNA2004100965608A CN200410096560A CN1637169A CN 1637169 A CN1637169 A CN 1637169A CN A2004100965608 A CNA2004100965608 A CN A2004100965608A CN 200410096560 A CN200410096560 A CN 200410096560A CN 1637169 A CN1637169 A CN 1637169A
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Prior art keywords
metal
solid
bismuth
coating solution
electro
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CNA2004100965608A
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木下满
平野次彦
高桥胜则
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Renesas Technology Corp
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Renesas Technology Corp
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Publication of CN1637169A publication Critical patent/CN1637169A/zh
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    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
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Abstract

一种电镀方法，包括将待镀体浸入包含锡和铋的镀覆溶液中，以便在该体的表面上形成锡－铋合金表层。进行镀覆使得放置在镀覆溶液中的固体锡金属和固体铋金属与阳极连接，并且待镀覆体与阴极连接。

Description

用于半导体器件的电镀方法
相关申请的交叉参考
本申请要求2003年12月5日申请的日本专利申请No.2003-406793的优先权，这里将其内容通过参考引入本申请。
技术领域
本发明涉及电镀(电解镀覆)技术，更具体地说，涉及有效地应用于半导体器件制造工艺中的镀覆步骤的技术。
背景技术
在使用引线框制造的半导体器件中，通常在引线的外部连接端子处形成合金表层，以便在通过焊接安装到衬底上的过程中确保焊料的润湿性。尽管由Pb(铅)-Sn(锡)复合物制成的合金表层主要用于这种表层，但是近来从环境保护的观点来看对使用Pb已经提出限制。因此，无铅合金表层的使用已经取得了进展。
已经提出各种类型的无铅复合物用作合金表层，实际上在实施中已经减少了。其中之一是，已知有由Sn-Bi复合物制成的合金表层(即Sn-Bi合金表层)。例如在日本专利公开平7(1995)-65206中公开了该Sn-Ti合金表层。在本公开中，还披露了根据电镀方法形成Sn-Bi合金表层的技术。
发明内容
我们已经研究了半导体器件制造工艺中的镀覆工艺，结果，发现其中包含下列问题。
在镀覆步骤，通过电镀法形成Sn-Bi表层。该电镀法是一种通过电解反应从镀覆溶液(即金属盐溶液)将金属电解沉积到待镀覆体(即电导体表面)上从而形成合金表层的方法，。Sn-Bi合金层的形成是通过将引线框浸入包含锡和铋的镀覆溶液中并且分别将设置在镀覆溶液中的固体锡金属连接到阳极和将引线框连接到阴极进行的。
在以这种方式形成Sn-Bi合金表层的情况下，镀覆周期的重复导致镀覆溶液中锡和铋浓度的降低，使得必须在镀覆溶液中提供锡和铋。镀覆溶液中锡的提供是通过使固体锡金属电解溶解在镀覆溶液中进行的。另一方面，镀覆溶液中铋的提供是通过另外将铋溶液补充到镀覆溶液中进行的。尽管铋溶液的补充可以根据半导体器件的引线框的尺寸和引线数量而不同，但是必须根据半导体器件的数量、比如每20,000个半导体器件就进行一次补充。此外，铋溶液的补充必须在停止电镀装置之后进行，为此补充一次需要15至20分钟。更具体地说，为了补充与镀覆溶液中铋的减少对应量的溶液，必须每单位小时停止一次电镀装置，因此降低了电镀装置的工作速度(即镀覆周期数)。该电镀装置工作速度(镀覆周期数)的降低变成了拉升半导体器件成本的因素。
在通过添加铋溶液在镀覆溶液中提供铋的情况下，从补充铋溶液之后到铋溶液补充完成的时间段内，镀覆溶液中的铋浓度变得不均匀。这样易于引起得到的Sn-Bi合金层的成份比变化。该成份比变化使得半导体器件的安装可靠性降低。
本发明的目的是提供一种确保能够增强电镀装置工作速度(即增加镀覆周期)的电镀技术。
本发明的另一个目的是提供一种能够使半导体器件以低成本制造的技术。
本发明的再一个目的是提供一种能够提高半导体器件安装可靠性的技术。
通过下面参考附图的描述，本发明的上述和其它目的及新特征将变得显而易见。
下面简要描述本发明的典型实施例。
(1)在将待镀体浸入包含锡和铋的镀覆溶液中以在该体表面上形成锡-铋合金表层的电镀方法中，进行镀覆使得镀覆溶液中的固体锡金属和固体铋金属分别与阳极连接，而待镀体与阴极连接。
(2)在将待镀体放入包含锡和铋的镀覆溶液中以在该体表面上形成锡-铋合金表层的电镀方法中，进行镀覆使得多个金属外壳与阳极连接，该体与阴极连接，在每个金属外壳中都容纳固体锡金属和固体铋金属，并且以使得在外壳之间夹置该体同时保持从其离开给定的空间的方式在镀覆溶液中提供该金属。
(3)根据程序进行镀覆，包括步骤：
(a)提供树脂模制或者封装的半导体芯片和引线框，该引线框具有与半导体芯片的电极电连接的引线；和
(b)将引线框浸入包含锡和铋的镀覆溶液中，以便在引线上形成锡-铋合金表层，
其中在步骤(b)中，放置在镀覆溶液中的固体锡金属和固体铋金属与阳极连接，而引线框与阴极连接。
应注意，基于我们的研究结果，我们对形成Sn-Bi合金表层的电镀进行了现有技术的检索。结果，我们发现了前述日本专利公开No.平7(1995)-65206。该公开说明了这样一种技术，其中使用铋金属作为阳极，通过铋金属阳极的电解溶解实现补充与铋从镀覆槽的沉积对应量的铋离子，通过添加到镀覆溶液中的锡盐或者锡氧化物的溶解实现补充与锡从镀覆溶液的沉积对应量的锡离子。在该专利公开的镀覆技术中，锡以液体形式提供到镀覆溶液中，因此，电镀装置的工作速度(即镀覆周期)降低了。
下面简要描述通过本发明的典型实施例获得的效果。
根据本发明，可以增强电镀装置的工作速度(即可以增加镀覆周期数)。
而且，提高其安装可靠性的同时，可以实现半导体器件制造成本的降低。
附图说明
图1是表示半导体器件外部结构的平面示意图；
图2(a)和2(b)分别是表示半导体器件内部结构的平面示意图和截面示意图；
图3是表示图2(b)的部分放大平面示意图；
图4是表示用于半导体器件制造的引线框的平面示意图；
图5是图4的部分放大平面示意图；
图6(a)至6(c)分别示出了制造半导体器件的步骤，其中图6(a)是表示引线框的产品形成区的截面示意图，图6(b)是表示芯片键合步骤的截面示意图，而图6(c)是表示引线键合步骤的截面示意图；
图7(a)至7(b)分别示出了在图6(a)至6(c)之后的半导体器件制造步骤，其中图7(a)是表示模制步骤的截面示意图，图7(b)是表示镀覆步骤的截面示意图；
图8是引线框主要部分的底部示意图，表示半导体器件制造中模制步骤之后的状态；
图9是表示用于半导体器件制造的电镀装置的概略布置的方框图；
图10是表示镀覆装置的镀覆单元的概略布置的平面示意图；
图11是用于图9的电镀装置的镀覆溶液的化学式；
图12是图10的部分放大平面示意图；
图13是表示图9的镀覆装置的镀覆单元的概略布置的截面示意图；
图14是表示用于图9的镀覆装置的金属外壳的透视示意图；
图15是表示图14的金属外壳的截面示意图；
图16是表示根据本发明实施例的第一修改例的镀覆单元的平面示意图；
图17是表示根据本发明实施例的第二修改例的镀覆单元的平面示意图；
图18是表示根据本发明实施例的第三修改例的镀覆单元的平面示意图；
图19是表示根据本发明实施例的第四修改例的镀覆单元的平面示意图。
具体实施方式
参考附图详细描述本发明的实施例，其中在整个说明书中相同的附图标记表示具有类似功能的相同部分或者部件，并且不再重复说明。
图1是表示半导体器件外部结构的平面示意图，图2(a)和2(b)分别是表示半导体器件内部结构的平面示意图和截面示意图，图3是表示图2(b)的部分放大的平面示意图，图4是表示用于半导体器件制造的引线框的平面示意图，图5是图4的部分放大的平面示意图，图6(a)至6(c)分别示出了半导体器件制造步骤，其中图6(a)是表示引线框的产品形成区的截面示意图，图6(b)是表示芯片键合步骤的截面示意图，而图6(c)是表示引线键合步骤的截面示意图，图7(a)至7(b)分别示出了图6(a)至6(c)之后的半导体器件制造步骤，其中图7(a)是表示模制步骤的截面示意图，而图7(b)是表示镀覆步骤的截面示意图，图8是引线框主要部分的底部示意图，表示半导体器件制造中模制步骤之后的状态，图9是表示用于半导体器件制造的电镀装置的概略布置的方框图，图10是表示镀覆装置的镀覆单元的概略布置的平面示意图，图11是用于图9的电镀装置的镀覆溶液的化学式，图12是图10的部分放大平面示意图，图13是表示图9的镀覆装置的镀覆单元的概略布置的截面示意图，图14是表示用于图9的镀覆装置的金属外壳的透视示意图，图15是表示图14的金属外壳的截面示意图。
如图2(a)和2(b)所示，根据本发明实施例的半导体器件1具有包含半导体芯片2、多个引线4、芯片支撑体(即芯片焊盘、插片和芯片安装部分)5、四个悬挂引线5a、多个键合布线7、塑性模制体8等的结构。半导体芯片2、多个引线4、芯片支撑体5、四个悬挂引线5a、多个键合布线7等密封在塑性模制体8中。半导体芯片2通过粘接剂6的粘接固定在芯片支撑体5的主表面(上表面)上，而芯片支撑体5具有一体结合的四个悬挂引线5a。
半导体芯片2具有平面形状，从其顶部看是正方形。在本实施例中，例如该形状是规则的四边形。尽管不是要限制，但是半导体芯片2具有这样的布置：例如包括半导体衬底、形成在半导体衬底主表面上的多个晶体管元件、形成在半导体器件主表面上的多层布线层、为覆盖其多层而形成的表面保护层(即最后保护层)等，其中在多层布线层中绝缘层和布线层分别构建为多数个。
半导体芯片2具有彼此相对的主表面(即电路形成表面)和背面，且集成电路形成在半导体芯片2的主表面侧上。该集成电路由晶体管元件和形成在多层中的布线构成，二者都形成在半导体衬底的主表面上。
在半导体芯片2的主表面上具有多个键合焊盘(电极)3。该多个键合焊盘3沿着半导体芯片2的各个边设置。该多个键合焊盘3形成在半导体芯片2的多层布线层的最上布线层处，并且通过形成在半导体芯片2的表面保护膜中并且对应于各个键合焊盘3的键合开口露出。
具体如图1和2所示，塑性模制体8具有平面形状，从其顶部看是正方形，并且例如在本实施例中成型为规则的正方形。塑性模制体8具有彼此相对定位的主表面(上表面)8x和背面(下表面或者安装表面)8y。使塑性模制体8的平面尺寸(外侧尺寸)大于半导体芯片2的平面尺寸(外侧尺寸)。
为了确保塑性模制体8的低应力的目的，该体例如由联苯基热塑性树脂形成，该树脂中添加有苯酚固化剂、硅橡胶、填料等。对于塑性模制体8的形成来说，使用适于大量生产的传递模塑技术。该传递模塑技术利用配置有罐的模具，利用流道、树脂注入口和空腔等，热塑性树脂从罐通过流道和树脂注入口充填到空腔中，以形成树脂模制体。
在树脂模制或者封装半导体器件的制造中，已经采用一个一个的基本类型的传递模塑技术，其中提供具有多个产品形成区的引线框，并且利用每个产品形成区的树脂模制安装在各个产品形成区中的每个半导体芯片；大批模制型传递模塑技术，其中提供具有多个产品形成区的引线框，和利用作为整体的树脂模制安装在产品形成区中的半导体芯片。在本实施例的半导体器件1的制造中，例如采用一个一个的基本类型的传递模塑技术。
如图2(a)和2(b)所示，多个引线4沿着树脂模制体8的四个边设置，并且从树脂模制体8的边向着半导体芯片2延伸。
半导体芯片2的多个键合焊盘3电连接到多个引线4。在本实施例1中，半导体芯片2的键合焊盘3和引线4通过键合布线7电连接。键合布线7的一端连接到半导体芯片2的键合焊盘3，而与键合布线7的该端相对的另一端连接到半导体芯片2外侧(外周边)处的引线4。对于键合布线7来说，例如使用金(Au)布线。例如，通过使用热压和超声波振动的钉头键合(球键合)法进行布线7的连接。
多个引线分别具有相互彼此相对定位的主表面和背表面，并且多个引线4的每一个的背表面都从树脂模制体8的背面侧露出。在本实施例的QFN型半导体器件1中，使用引线4的背表面作为用于外部连接的端子。
在引线4的背表面中，形成了合金表层(焊料表层)9，如图3所示。形成该焊料表层9的目的是确保当该半导体器件通过焊料安装到印刷电路板上时焊料的润湿性。在本实施例中，例如使用由98wt％Sn-2wt％Bi的复合物制成的合金层作为焊料表层。该Sn-Bi合金表层通过下面详细描述的电镀法形成。该电镀法是一种通过电解在待镀覆的本体或者物品(例如电导体的表面)上从镀覆溶液电解沉积金属以便形成合金表层的方法。
接着，参考图4和5描述用于半导体器件1的制造的引线框。
如图4和5所示，例如，引线框LF具有多重结构(multiplestructure)，其中多个产品形成区(器件形成区)11以矩阵形式分别布置在包含外框和内框的框体(支撑体)10内。各个产品形成区11具有设置在其内的多个引线4、一个芯片支撑体5和四个悬挂引线5a等。芯片支撑体5位于产品形成区11的中心并且通过四个悬挂引线5a与框体10一体形成。通过分为四个引线组设置多个引线4，并且每个引线组中的引线4都与框体10一体形成。
引线框LF是通过对由例如铁(Fe)-镍(Ni)合金、Cu或者Cu合金制成的平片(金属片)进行蚀刻或者压制以形成预定的引线图形而形成的。本实施例的引线框LF具有引线4的高度，并且芯片支撑体5沿着其厚度偏移，如图6(a)所具体示出的。该偏移通过弯曲悬挂引线5a来实现。
接着，参考图6(a)至6(c)、7(a)和7(b)说明半导体器件1的制造。
首先，提供图4、5和6(a)中示出的引线框LF，接着将半导体芯片2通过如图6(b)所示的粘接剂6固定键合到各个产品形成区11的芯片支撑体5上。进行半导体芯片2的键合固定，使得半导体芯片2的背面和芯片支撑体面对面设置。
如图6(c)所示，半导体芯片2的多个键合焊盘和多个引线4分别通过各个产品形成区11中的键合布线7电连接。
接着，如图7(a)所示，通过对半导体芯片2、多个引线4、芯片支撑体5、四个悬挂引线5a、多个键合布线7等进行树脂模制，在各个产品形成区11中形成树脂模制体8。在本实施例中，根据一个一个的基本类型的传递模塑法形成该树脂模制体8，该方法中在每个产品形成区中树脂模制安装在各个产品形成区11中的半导体芯片。
接着，如图7(b)所示，例如，在引线4(即用于外部连接的端子)的背面侧形成由98wt％Sn-2wt％Bi复合物制成的合金表层，作为合金表层9。该Sn-Bi合金表层通过如下所述的电镀法形成。
接着，通过从框体10切割分离引线4和悬挂引线5a。以这种方式，完成图1、2(a)和2(b)所示的半导体器件1。
接着参考图8至15详细描述半导体器件1制造工艺中的镀覆步骤。
在镀覆工序中，使用图9所示的电镀装置20。尽管未限制，但是该镀覆装置20包含装载单元21、预处理单元23、镀覆单元23、后处理单元24、干燥单元25和卸载单元26等。装载单元21给预处理单元22提供引线框LF。在预处理单元22中，例如使用碱性处理溶液进行脱脂，以便从引线框LF除去油污等。此外，使用处理溶液例如氢氟酸(HF)、过氧化氢(H2O2)等通过蚀刻框的表面进行引线框LF的表面活化，以确保合金表层(导电膜)的良好粘接。在镀覆单元23中，在引线框的表面上形成合金表层。在后处理单元24中，使用碱性处理溶液中和在前面的镀覆单元23中形成的合金表层并且漂洗在前面步骤中使用的处理溶液。在干燥单元25中，汽化附着于引线框LF的湿气。在卸载单元26中，提供在前面的干燥单元25中处理过的引线框LF。
在镀覆单元23中，如图10所示设置镀覆容器30。在镀覆容器30中，放置镀覆溶液31。对于镀覆溶液31来说，例如使用除了锡和铋之外还包含图11所示化学式的有机磺酸的溶液。例如，锡和铋以大约98(锡)∶2(铋)的比例存在于镀覆溶液31中。
如图10至12所示，在镀覆溶液31中放置固体锡金属37和固体铋金属38。固体锡金属37和固体铋金属38分别与电源32的阳极连接，而待电镀的体即引线框LF与电源32的阴极连接。将引线框LF浸入镀覆溶液31中，并且在镀覆溶液中沿着移动方向R移动。在引线框LF移动过程中，镀覆溶液31中的Sn和Bi通过电解反应电解沉积到包含用于外部连接的端子的引线框LF表面上，从而形成由大约98wt％Sn-2wt％Bi复合物制成的合金表层9。
镀覆溶液中锡和Bi的浓度分别随着镀覆周期的进行而降低，使得必须在镀覆溶液31中供应锡和铋。镀覆溶液31中锡的供应通过允许固体锡金属37电解溶解在镀覆溶液中来实现。同样，通过允许固体铋金属38电解溶解在镀覆溶液中来给镀覆溶液提供铋。
如上所述，放置在镀覆溶液31中的固体锡金属37和固体铋金属38分别与阳极连接，而引线框LF与阴极连接，以便形成合金表层9。因此，通过在镀覆溶液31中电解溶解固体锡金属37实现对镀覆溶液锡的供应，通过在镀覆溶液中电解溶解固体铋金属实现对镀覆溶液铋的供应。以这种方式，当进行镀覆时，可以补充锡和铋的消耗量而不停止镀覆装置30。当与锡和铋分别以溶液形式提供给镀覆溶液的情况相比，由于不需要溶液的补充时间，因此可以提高电镀装置的工作速度(即可以增加镀覆周期)。此外，由于提高了电镀装置的工作速度(即增加了镀覆周期)，因此可以降低半导体器件的制造成本。
而且，镀覆溶液31中锡和铋总是分别以给定的速度电解溶解，使得可以抑制浓度的不均匀，其中镀覆溶液中锡和铋的浓度随着时间改变。这样最终能够抑制得到的Sn-Bi合金表层的成份比的变化，从而提高半导体器件的安装可靠性。
在盛放在金属外壳33中的镀覆溶液中放置固体锡金属3 7和固体铋金属38。该金属外壳33与电源32的阳极连接。如图14所示，金属外壳33在其上侧开口，以容易允许固体锡金属37和固体铋金属38放到镀覆溶液31中。外壳33的前侧由网36构成，以便允许镀覆溶液浸入到外壳中。更具体地说，金属外壳33具有这样的结构，即在镀覆装置工作过程中，新的固体锡金属37和新的固体铋金属38能够排放到镀覆溶液31中。
利用屏蔽板35将金属外壳33分区为存储隔间(34a，34b)。隔间34a装有固体锡金属37，而隔间34b装有固体铋金属38。为了防止从固体铋金属38电解溶解在镀覆溶液31中的铋通过置换沉积在固体锡金属37上，即，为了防止电解溶解的铋在垂直于电场方向上在镀覆溶液中移动，或者更是为了防止电解溶解的铋向固体锡金属37移动，将屏蔽板35设置在金属外壳33内部。
如图10和13所示，金属外壳33分别放置在引线框LF的移动通路的相对侧，以便夹置引线框LF，保持离开给定的距离。以这种方式，当每个容纳固体锡金属37和固体铋金属38的金属外壳33放置在引线框38的移动通路的相对侧时，可以均匀地形成通过电解沉积形成在引线框LF表面上的Sn-Bi合金层9，同时抑制其内成份的不均匀，其中引线框LF包含用于引线4的外部连接的端子。
如图8所示，通过将已经经过模制步骤的引线框LF移到镀覆溶液31中来进行镀覆步骤。引线框LF具有多重结构，其中多个产品形成区11以直线设置，并且因此在平面中该引线框LF是矩形。该引线框LF在镀覆溶液31中移动，使得引线框LF的长与移动方向R一致。因此，为了进一步抑制Sn-Bi合金层9中的成份不均匀，优选沿着引线框移动路线分别放置不同组的固体锡金属37和固体铋金属38。在本实施例中，放置在引线框移动路径一侧的固体锡金属37和固体铋金属38和放置在引线框移动路径另一侧的固体锡金属37和固体铋金属38以面对面的关系设置，以便在其间夹置引线框移动路径。
固体锡金属37和固体铋金属38每个都处于粒状固体金属团的形式，如图12和13所具体示出的。当每个都以粒状固体金属团的形式使用该固体锡金属37和固体铋金属38时，镀覆溶液31和固体锡金属37及固体铋金属38之间的接触面积增加了。因此，可以稳定锡和铋的电解溶解，从而能够适当抑制Sn-Bi合金表层的成份不均匀。
应注意，尽管图中未详细示出，但是固体锡金属37的多个粒状团呈圆形，并且固体铋金属38的多个粒状团呈圆柱形。球形和圆柱形粒状团分别具有大的表面积，因此有助于增加与镀覆溶液的接触面积。
图16是表示上述实施例的第一修改例的图，即镀覆单元的平面示意图。
在前面的实施例中，已经示出了其中一组固体锡金属37和固体铋金属38放置在引线框移动路线的一侧和另一组固体锡金属37和固体铋金属38放置在引线框移动路线的另一侧使得两组彼此面对以在其间夹置引线框移动路线的情况。如图16所示，两组固体锡金属37和固体铋金属38可以沿着引线框移动方向交替设置，使得一侧的固体锡金属37和另一侧的固体铋金属38彼此面对，并且一侧的固体铋金属38和另一侧的固体锡金属37彼此面对。利用该设置，更加可以抑制Sn-Bi合金层9的成份不均匀。
图17是表示实施例的第二修改例的图，即表示镀覆单元的平面示意图。
在前面的实施例中，已经示出了单个提供每个用于容纳固体锡金属37的存储隔间34a和用于容纳固体铋金属38的存储隔间34b的情况。如图17所示，可以提供多个存储隔间34a和多个存储隔间34b。在这种情况下，固体锡金属37和固体铋金属38应优选沿着如图17所示的移动方向放置在交替的隔间中。
图18是表示实施例的第三修改例的图，即镀覆单元的平面示意图。
在前面的实施例中，已经示出了固体锡金属37和固体铋金属38通过屏蔽板35分别容纳在一个金属外壳中的情况。如图18所示，固体锡金属37和固体铋金属38可以分别容纳在分离的金属外壳中。在这种情况下，金属外壳的侧面起到屏蔽板的作用。
图19是实施例的第四修改例的图，即镀覆单元的平面示意图。在前面的实施例中，已经示出了其中固体锡金属37和固体铋金属38与相同的阳极连接的一个电源系统。如图19所示，可以使用两个电源系统，其中固体锡金属37与向其输送第一电位的第一阳极连接，而固体铋金属38与向其输送第二电位的第二阳极连接，以便形成Sn-Bi合金表层9，其中第二电位比第一电位高。由于固体铋金属具有比固体锡金属37高的单位电阻率，因此使用这个双电源系统能够进一步抑制Sn-Bi合金层9的成份不均匀。
在上述实施例中，使用包含锡和铋并且进一步包含有机磺酸溶液的镀覆溶液用作镀覆溶液31。然而，在本发明中，可以使用包含锡和铋并且进一步包含无机硫酸盐溶液的镀覆溶液。
应注意，尽管基于实施例已经具体描述了我们做出的本发明，但是不应认为本发明限于那些实施例，在不离开本发明范围的情况下，许多变更和改变都是可能的。
例如，尽管已经示出了本发明应用于QFN半导体器件制造的情况，但是本发明可以应用于其中在用于引线外部连接的端子处形成Sn-Bi合金表层的半导体器件的制造。

Claims (33)

1.一种电镀方法，包括在包含锡和铋的镀覆溶液中浸入待镀体，以便在所述体的表面上形成锡-铋合金表层，其中放置在所述镀覆溶液中的固体锡金属和固体铋金属分别与阳极连接，并且所述体与阴极连接。
2.根据权利要求1的电镀方法，其中在所述镀覆溶液中分别电解溶解出所述固体锡金属和所述固体铋金属。
3.根据权利要求2的电镀方法，其中所述镀覆溶液包含有机磺酸溶液。
4.根据权利要求2的电镀方法，其中所述镀覆溶液包含无机硫酸盐溶液。
5.根据权利要求2的电镀方法，其中所述固体锡金属和所述固体铋金属分别由多个粒状固体金属团制成。
6.根据权利要求5的电镀方法，其中所述固体锡金属和所述固体铋金属的每一个的所述多个粒状固体金属团放在所述镀覆溶液中并且放在与所述阳极连接的金属外壳中。
7.根据权利要求6的电镀方法，其中所述金属外壳在其内具有在所述固体锡金属和所述固体铋金属之间设置的屏蔽板，以便防止电解溶解出的铋通过置换沉积。
8.根据权利要求5的电镀方法，其中所述固体锡金属的所述多个粒状固体金属团呈圆形。
9.根据权利要求5的电镀方法，其中所述固体铋金属的所述多个粒状固体金属团呈圆柱形。
10.根据权利要求2的电镀方法，
其中所述阳极具有与第一电位连接的第一阳极和与比所述第一电位高的第二电位连接的第二阳极，和
其中所述固体锡金属与所述第一阳极连接，并且所述固体铋与所述第二阳极连接。
11.一种电镀方法，其中待镀体放在包含锡和铋的镀覆溶液中，以便在所述体的表面上形成锡-铋合金表层，
该方法包括：
多个金属外壳与阳极连接，每个金属外壳容纳固体锡金属和固体铋金属，并且放置在所述镀覆溶液中以便在其间与所述体保持给定距离夹置所述体；和
所述体连接到阴极。
12.根据权利要求11的电镀方法，其中在所述镀覆溶液中分别电解溶解出所述固体锡金属和所述固体铋金属。
13.根据权利要求12的电镀方法，其中所述镀覆溶液包含有机磺酸溶液。
14.根据权利要求12的电镀方法，其中所述镀覆溶液包含无机硫酸盐溶液。
15.根据权利要求12的电镀方法，其中所述固体锡金属和所述固体铋金属分别由多个粒状固体金属团制成。
16.根据权利要求12的电镀方法，其中所述金属外壳在其内具有在所述固体锡金属和所述固体铋金属之间放置的屏蔽板，以便防止电解溶解出的铋通过置换沉积。
17.根据权利要求16的电镀方法，其中所述屏蔽板防止溶解出的铋在所述镀覆溶液中在垂直于电场方向的方向上移动。
18.根据权利要求17的电镀方法，其中所述体在垂直于电场方向的方向上移动。
19.根据权利要求16的电镀方法，其中所述屏蔽板防止电解溶解出的铋在各个金属外壳中向着所述固体锡金属移动。
20.根据权利要求15的电镀方法，其中所述固体锡金属的所述多个固体金属团呈圆形。
21.根据权利要求15的电镀方法，其中所述固体铋金属的所述多个固体金属团呈圆柱形。
22.根据权利要求12的电镀方法，
其中每个所述阳极具有与第一电位连接的第一阳极和与比所述第一电位高的第二电位连接的第二阳极，和
其中所述金属外壳为两个，并且包含与所述第一阳极连接的第一金属外壳和与所述第二阳极连接的第二金属外壳。
23.一种半导体器件的制造方法，包括步骤：
(a)提供树脂模制半导体芯片和引线框，该引线框具有与所述半导体芯片的电极电连接的引线；和
(b)将所述引线框浸入包含锡和铋的镀覆溶液中，以便在所述引线上形成锡-铋合金表层，
其中在步骤(b)中，放置在所述镀覆溶液中的固体锡金属和固体铋金属分别与阳极连接，所述引线框与阴极连接。
24.根据权利要求23的制造方法，其中所述引线框具有多重结构，其中放置所述半导体芯片和引线的多个产品形成区设置在一条线上。
25.根据权利要求23的制造方法，其中在所述步骤(b)中，所述固体锡金属和所述固体铋金属分别在所述镀覆溶液中电解溶解出。
26.根据权利要求25的制造方法，其中所述镀覆溶液包含有机磺酸溶液。
27.根据权利要求25的制造方法，其中所述镀覆溶液包含无机硫酸盐溶液。
28.根据权利要求25的制造方法，其中所述固体锡金属和所述固体铋金属分别由多个粒状固体金属团制成。
29.根据权利要求28的制造方法，其中所述固体锡金属和所述固体铋金属的所述多个粒状固体金属团分别放置在所述镀覆溶液中和与所述阳极连接的金属外壳中。
30.根据权利要求29的制造方法，其中所述金属外壳具有放置在所述固体锡金属和所述固体铋金属之间的屏蔽板，以便防止从前电解溶解出的铋通过置换沉积。
31.根据权利要求25的制造方法，
其中所述阳极具有与第一电位连接的第一阳极和与比所述第一电位高的第二电位连接的第二阳极，和
其中所述固体锡金属与所述第一阳极连接，并且所述固体铋金属与所述第二阳极连接。
32.根据权利要求25的制造方法，其中所述固体锡金属和所述固体铋金属分别设置在所述引线框的移动路径的相对侧。
33.根据权利要求32的制造方法，其中所述固体锡金属和所述固体铋金属沿着所述引线框的移动路径设置。
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