CN1612367A - 电极结构以及具有该电极结构的半导体发光器件 - Google Patents

电极结构以及具有该电极结构的半导体发光器件 Download PDF

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CN1612367A
CN1612367A CNA2004100484434A CN200410048443A CN1612367A CN 1612367 A CN1612367 A CN 1612367A CN A2004100484434 A CNA2004100484434 A CN A2004100484434A CN 200410048443 A CN200410048443 A CN 200410048443A CN 1612367 A CN1612367 A CN 1612367A
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electrode structure
contacting metal
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CN100428506C (zh
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金显秀
赵济熙
尹皙胡
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Samsung Electronics Co Ltd
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Abstract

本发明公开了一种电极结构以及具有该电极结构的半导体发光器件。该半导体发光器件包括：透明衬底；在透明衬底上形成的电子注入层；在电子注入层的第一区域上形成的有源层；在有源层上形成的空穴注入层；形成在空穴注入层上并同时提供高反射率和低接触电阻的第一电极结构；在电子注入层的第二区域上形成的第二电极结构；和与第一和第二电极结构电连接的电路基板，第一电极结构包括：具有任一选自由具有低接触电阻的镍、钯、铂和ITO构成的组的物质的接触金属结构；和具有铝或银的反射层。

Description

电极结构以及具有该电极结构的半导体发光器件
技术领域
本发明涉及一种使用氮化物半导体等材料的半导体发光器件，尤其涉及一种同时满足低接触电阻和高反射率的高反射电极结构以及一种具有该电极结构的倒装芯片发光器件。
背景技术
一般用于可见光发射器件的氮化物基化合物半导体经过蓝和绿可见光区目前发展到用于发射白光的紫外光区。该氮化物基化合物半导体主要分为从有源层发出的光中提取向上的光的结构、以及提取穿过透明衬底例如蓝宝石衬底的向下的光的结构。
在具有提取通过透明衬底的光的结构的倒装芯片发光器件中，P型电极界面处的反射率对于再次将向上的光反射为指向下是非常重要的。
同时，发光器件具有低工作电压是有利的。目前，降低发光器件工作电压的最一般方法是减小在电极层和有源层之间形成的材料层的电阻。特别是，由于在倒装芯片发光器件中空穴注入层和P型电极彼此是欧姆接触的，所以非常期望空穴注入层和P型电极具有在它们之间形成的低欧姆接触电阻，以降低工作电压。
图1是说明常规氮化物半导体发光器件的示意剖视图。
如图1所示，常规倒装芯片氮化物半导体发光器件10包括：蓝宝石衬底11；在蓝宝石衬底11上顺序形成的N型GaN层12；由InGaN构成的有源层16；P型GaN层18；镍层20；P型反射电极22和在N型GaN层12一侧表面上形成的N型电极14。发光器件10具有双异质结构，其中N型GaN层12用作第一导电型的包层(cladding layer)，P型GaN层18用作第二导电类型的包层。
而且，在P型GaN层18上形成镍层20至具有小于约10nm的厚度，镍层用作形成欧姆接触的接触金属层。由于P型反射电极22由铝(Al)或银(Ag)构成，所以透过作为接触金属的镍层20的光在P型反射电极22和镍层20之间的界面反射。
常规发光器件10能够直接从P型反射电极提取光，P型反射电极由例如具有高反射率的铝(Al)或银(Ag)之类的材料构成，发光器件10能够获得高效率的光提取。但是，常规发光器件具有缺点，即当直接应用具有高反射率的P型反射电极22时，接触电阻增加。因此，形成镍层20作为用于形成欧姆接触的接触金属，从而降低了接触电阻。
但是，在具有镍层20作为接触金属的倒装芯片氮化物半导体发光器件10中，由于从由InGaN构成的有源层16发出的光穿过镍层20，接着在镍层20和P型反射电极22的界面反射，并再次穿过镍层20和蓝宝石衬底11而发射，所以镍层20吸收大量光。因此，常规倒装芯片氮化物半导体发光器件10具有非常难于增加反射率的不足。
换句话说，由于作为接触金属的镍层20被用于与P型GaN层18可靠地接触，所以较厚的镍层20能够提供与P型GaN层18更好的接触。但是，如果镍层20具有大于10nm的厚度，则难于具有足够的反射率。
因此，要求半导体发光器件具有维持高反射率同时维持低接触电阻的反射结构。
发明内容
本发明提供一种具有同时满足低接触电阻和高反射率的P型电极结构的半导体发光器件。
而且，本发明提供了一种半导体发光器件中同时满足低接触电阻和高反射率的电极结构。
按照本发明的一个方面，提供了一种半导体发光器件，包括：透明衬底；在透明衬底上形成的电子注入层；在电子注入层的第一区域上形成的有源层；在有源层上形成的空穴注入层；形成在空穴注入层上并同时提供高反射率和低接触电阻的第一电极结构；在电子注入层的第二区域上形成的第二电极结构；和与第一和第二电极结构电连接的电路基板，其中第一电极结构包括：接触金属结构，其具有从低接触电阻的镍、钯、铂和ITO(氧化铟锡)构成的组中选出的任意一种；以及具有铝或银的反射层。
按照本发明的另一个方面，提供一种电极结构，包括：透明衬底；在透明衬底上形成的电子注入层；接触金属结构，其具有从低接触电阻的镍、钯、铂和ITO构成的组中选出的任意一种，用在具有有源层和空穴注入层的半导体发光器件中；以及具有高反射率的反射层，例如铝或银。
这里，接触金属结构可以是岛型或网格型(mesh-type)。
接触金属结构与反射层的面积比可以是1％到90％，接触金属结构的厚度小于200nm。
而且，反射层可以由具有高反射率的铝(Al)或银(Ag)构成。
而且，透明衬底可以由蓝宝石或碳化硅构成。
而且，电子注入层可以由N型GaN构成，有源层可以由InGaN构成，空穴注入层可以由P型GaN构成。
附图说明
通过参照附图对其示例实施例的详细介绍，本发明的上述和其它特征和优点将变得更加明显，其中：
图1是说明常规氮化物半导体发光器件的示意剖视图；
图2是说明按照本发明的一优选实施例的半导体发光器件的剖视图；
图3A和3B是说明用在按照本发明的一优选实施例的图2的半导体发光器件中的电极结构的剖视图；
图4A至4F是说明按照本发明的，取决于钯层和银层的不同面积比的电极结构的平面图；以及
图5A和5B是曲线图，说明光发射与图4A至4F所示的各个网格区的相互关系、以及工作电压与半导体发光器件中的各个网格区的相互关系。
具体实施方式
现在将参照附图更全面地介绍本发明，其中示出了发明的示例实施例。但是，本发明可以以诸多不同形式实施，并不应解释成受限于这里阐释的实施例；相反地，提供这些实施例是为了使这里的公开详尽、完全，而且这些实施例将向本领域技术人员全面传达本发明的原理。在附图中，为了清晰而放大了层的厚度和区域。还应理解，当称一层在另一层或衬底“上”时，它可以直接在该另一层或衬底上，或者还可以存在插入层。
图2是说明按照本发明一优选实施例的半导体发光器件的剖视图。
如图2所示，半导体发光器件100包括：由例如蓝宝石(Al2O3)或碳化硅(SiC)的透明材料制成的透明衬底102；透明衬底102上由N型GaN形成的电子注入层104；由InGaN形成的有源层106；以及由P型GaN形成的空穴注入层108。电子注入层104包括第一部分和第二部分、和第一部分比第二部分薄的台阶形。有源区106和空穴注入层108形成在第二部分上。
此外，半导体发光器件100还包括：按照本发明优选实施例的在空穴注入层108上形成的还用作反射层的P型电极结构110，该P型电极结构110可以包括接触金属结构，其用作形成欧姆接触以降低接触电阻的接触金属；以及反射层，其由具有高反射率的例如银(Ag)或铝(Al)的金属形成。
图3A和3B是说明用在按照本发明优选实施例的图2的半导体发光器件中的电极结构的剖视图。
参照图3A，按照本发明第一实施例的P型电极结构110形成在空穴注入层108上，包括用作形成欧姆接触以降低接触电阻的接触金属的接触金属结构110A；以及反射层110B。此外，接触金属结构110A可以由自具有低接触电阻的镍(Ni)、钯(Pd)、铂(Pt)或氧化铟锡(ITO)构成的组中选出的任意一种物质形成。反射层110B可以由诸如铝(Al)或银(Ag)的具有高反射率的金属形成。
此外，按照本发明优选实施例的P型电板结构110起到在空穴注入层108中均匀分布电流的功能、以及接触功能，该电流由稍后装配的电路板施加。
同时，在有源层106中，从电子注入层104注入的电子与从空穴注入层108注入的空穴复合。复合的电子和空穴落到低能带，从而引起光发射。此时，在P型电极结构110的反射层110B和接触金属结构110A之间的界面处和反射层110B和空穴注入层108之间的界面处反射发出的光。反射的光顺序穿过空穴注入层108、有源层106、电子注入层104和透明衬底102，并在图2的箭头方向上发射出。
接触金属结构110A是岛形的，反射层110B覆盖包括空穴注入层108和接触金属结构110A的组合结构。尽管接触金属结构110A是矩形的岛状，但在本发明的范围或精神内还可以有其它形状，例如半球形或正四面体。
参照图3B，按照本发明第二实施例的P型电极结构210形成在空穴注入层208上，且包括用作形成欧姆接触以降低接触电阻的接触金属的接触金属结构210A；和反射层210B。反射层210B可以由诸如铝(Al)或银(Ag)的具有高反射率的金属形成。
接触金属结构210A是网格形的，并且反射层210B覆盖包括空穴注入层208和接触金属结构210A的组合结构。尽管网格形接触金属结构210A具有正方形条形形状(square bar shape)，但在本发明的范围或精神内还可以具有其它形状，例如圆柱形形状或矩形形状。
再参照图2，在电子注入层104较薄的第一部分上形成N型电极112。N型电极112还可以形成为具有例如Ti/Al/Pt/Au的电极结构，其中金属是沉积的。如上所述，在半导体发光部件安装在透明衬底102上之后，在具有Au层116和形成在Au层116上的焊球114的辅助安装台(sub-mount)118上对准所得的透明衬底102。Au层116是布线形的，例如引线框。
接着，进行倒装芯片焊接，从而把辅助安装台118与透明衬底102装配到一起，在透明衬底102上安装有半导体发光部件，由此完成了半导体发光器件100。尽管附图中没有详细示出，但可以附加进行形成焊接金属的工艺，该焊接金属用于把P型电极结构110和N型电极112与辅助安装台118焊接。
图4A至4F是说明按照本发明的取决于钯(Pd)层与银(Ag)层的不同面积比的电极结构的平面图。
图4A至4F说明由钯(Pd)形成的接触金属层，其形成在空穴注入层上从而具有约3nm的厚度。这代表电极结构的实验结果，其中从图4A到图4F，Pd层与Ag层的面积比改变，从而说明本发明的效果。
详细地说，在图4A中，所有由402代表的部分形成为具有大约25-35厚度的标准型Pd层。在图4B至4E中，区域(网格1到网格4)402分别对应Pd层。所述区域的Pd层与Ag层的每个面积比分别是1.25、0.78、0.56和0.44。这里，附图标记400代表由Ag形成的反射层，附图标记402代表由Pd形成的接触金属层。在图4F中，仅形成Ag层，而不形成Pd层。
图5A和5B是说明光发射与图4A至4F所示的各个网格区的相互关系、以及工作电压与半导体发光器件中各个网格区的相互关系的曲线图。
图5A示出了按标准电极结构、网格1到网格4电极结构和仅有Ag层的电极结构的发光器件的光发射的相关性，这些电极结构示于图4A至4F。
如图所示，可以看出，标准电极结构中亮度最低，该标准电极结构中Pd层整体形成为接触金属层，然后Al层整体形成在Pd层上。如上所述，之所以发生这种现象，是因为从有源层发出的光在Pd层和P型电极结构之间的界面处反射，使得反射的光射向透明衬底，从而在Pd层内大量吸收。
按照本发明的优选实施例，当电极结构采用Pd层和Ag层的结合时，亮度增加超过10％。此外，随着Ag层与Pd层的面积比变小，亮度逐渐地增加。同时，标准电极结构具有最低亮度，仅具有Ag层的电极结构具有最高的亮度。
图5B示出了按标准电极结构、网格1到网格4电极结构和仅有Ag层的电极结构的发光器件的工作电压的相关性，这些电极结构分别示于图4A至4F。
如图5A所示，在发光器件中，仅具有Ag层而不具有Pd层的电极结构具有最高的亮度，但如图5B所示地却具有超过4.99V的工作电压。因此，电极结构具有超出可施加到实际器件上的3.80V很多的工作电压。这是因为在仅具有Ag层的电极结构中接触电阻增加。
但是，当电极结构采用按照本发明优选实施例的Pd层和Ag层的组合时，该电极结构具有与常规电极结构相比不那么大的工作电压，同时提供高反射率，从而能够维持发光器件的光发射。此外，本发明控制了Pd层的面积以控制工作电压和P型电极结构的反射率，从而使发光器件的光效率最优。
在本发明的另一优选实施例中，接触金属结构与反射层的面积比可以是1％到90％，接触金属结构的厚度小于200nm。
如上所述，本发明具有这样的效果，即通过控制与P型半导体构成的空穴注入层相接触的接触金属层的面积，减小了接触金属层造成的光吸收，同时改善了半导体发光器件的光效率。
尽管已经参照其示例实施例具体地示出并介绍了本发明，但是本领域技术人员应理解，在不脱离如所附权利要求所限定的本发明的精神和范围的情况下可以对其做出形式和细节上的各种改变。

Claims (16)

1.一种半导体发光器件，包括：
透明衬底；
在该透明衬底上形成的电子注入层；
在该电子注入层的第一区域上形成的有源层；
在该有源层上形成的空穴注入层；
形成在该空穴注入层上并同时提供高反射率和低接触电阻的第一电极结构；
在该电子注入层的第二区域上形成的第二电极结构；以及
与该第一和第二电极结构电连接的电路基板。
2.根据权利要求1的发光器件，其中该第一电极结构包括：
接触金属结构，其具有从具有低接触电阻的镍、钯、铂和氧化铟锡构成的组中选出的任意一种物质；以及
在该接触金属结构上形成的反射层。
3.根据权利要求2的发光器件，其中该接触金属结构为岛形。
4.根据权利要求2的发光器件，其中该接触金属结构为网格形。
5.根据权利要求3或4的发光器件，其中该接触金属结构与该反射层的面积比为1％到90％。
6.根据权利要求5的发光器件，其中该接触金属结构的厚度小于200nm。
7.根据权利要求2的发光器件，其中该反射层由具有高反射率的铝或银形成。
8.根据权利要求1的发光器件，其中该透明衬底由蓝宝石构成。
9.根据权利要求1的发光器件，其中该空穴注入层由P型GaN构成。
10.一种用在半导体发光器件中的电极结构，该半导体发光器件具有有源层和在该有源层的一个表面上形成的空穴注入层，该结构包括：
接触金属结构，其在该空穴注入层的一个表面上形成以与该有源层相对，且具有从具有低接触电阻的镍、钯、铂和氧化铟锡构成的组中选出的任意一种物质；以及
形成在该接触金属结构上的反射层。
11.根据权利要求10的电极结构，其中该接触金属结构为岛形。
12.根据权利要求10的电极结构，其中该接触金属结构为网格形。
13.根据权利要求11或12的电极结构，其中该接触金属结构与该反射层的面积比为1％到90％。
14.根据权利要求13的电极结构，其中该接触金属结构的厚度小于200nm。
15.根据权利要求10的电极结构，其中该反射层由具有高反射率的铝或银构成。
16.根据权利要求10的电极结构，其中该空穴注入层由P型GaN构成。
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